EP1381901A1 - Microscope de controle pour plusieurs gammes de longueurs d'onde et couche antireflet destinee a un microscope de controle pour plusieurs gammes de longueurs d'onde - Google Patents

Microscope de controle pour plusieurs gammes de longueurs d'onde et couche antireflet destinee a un microscope de controle pour plusieurs gammes de longueurs d'onde

Info

Publication number
EP1381901A1
EP1381901A1 EP02706779A EP02706779A EP1381901A1 EP 1381901 A1 EP1381901 A1 EP 1381901A1 EP 02706779 A EP02706779 A EP 02706779A EP 02706779 A EP02706779 A EP 02706779A EP 1381901 A1 EP1381901 A1 EP 1381901A1
Authority
EP
European Patent Office
Prior art keywords
mgf
layer
reflection
reflection reduction
reduction layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02706779A
Other languages
German (de)
English (en)
Inventor
Frank EISENKRÄMER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leica Microsystems CMS GmbH
Original Assignee
Leica Microsystems CMS GmbH
Vistec Semiconductor Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leica Microsystems CMS GmbH, Vistec Semiconductor Systems GmbH filed Critical Leica Microsystems CMS GmbH
Publication of EP1381901A1 publication Critical patent/EP1381901A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/16—Microscopes adapted for ultraviolet illumination ; Fluorescence microscopes

Definitions

  • the application relates to an inspection microscope for several wavelength ranges with at least one illumination beam path and at least one imaging beam path.
  • the invention further relates to a reflection reduction layer for an inspection microscope for several wavelength ranges.
  • Inspection microscopes are used in the semiconductor industry to observe, examine and test wafers, masks and semiconductor components to control the various manufacturing steps. Inspection microscopes are mostly largely automated. These include automatic transport and handling systems for the components or wafers to be examined, as well as the possibility of automatic focusing.
  • the optical resolution of a microscope depends on the wavelength of the illuminating light and the numerical aperture of the objective. Since the numerical aperture of the lenses cannot be increased arbitrarily, the wavelengths of the illuminating light are chosen to be shorter and shorter to resolve ever smaller structures. Ultraviolet light is therefore used to resolve the very small structures on wafers for highly integrated circuits. Illumination wavelengths between 248 nm and 365 nm are currently common in inspection microscopes.
  • Wavelength ranges used.
  • Wavelength band which is characterized by its spectral peak position and its full width at half maximum, is filtered out of the light spectrum of the light source using a reflection filter system.
  • the illumination optics and the imaging optics of the microscope are corrected and adjusted for all three wavelength ranges.
  • the microscope image for the VIS area is displayed using eyepieces or an additional camera for the VIS area.
  • the microscope image for the i-line and the DUV area is made visible with a UV-sensitive TV camera.
  • a component changer with the required number of wavelength range-specific optical components is arranged in each case in the microscope beam path, where only beams of one of the three wavelength ranges are alternately guided. With this component changer, it is possible to insert one of these components, which is corrected and optimized for the currently used wavelength range, into the beam path.
  • the component changer can be designed, for example, as a linear slide or turntable on which the wavelength range-specific optical components are arranged.
  • optical components in the illuminating beam path and in the imaging beam path which are irradiated by beams of all wavelength ranges.
  • These are preferably the fixed optical components. These have to be optimized for all three wavelength ranges.
  • the reflection-reduced, fixed optical components of the inspection microscope are preferably made of quartz glass or CaF 2 , since these two materials differ from those in the ultraviolet wavelength range permeable materials are those that are suitable for industrial use (in terms of price, environmental stability, processability, etc.).
  • the reflection-reducing layer has a sandwich structure which consists of the materials M2 (a mixed substance from Merck made of La 2 O 3 .3.3 Al 2 O 3 ) and MgF 2 .
  • M2 a mixed substance from Merck made of La 2 O 3 .3.3 Al 2 O 3
  • MgF 2 a mixed substance from Merck made of La 2 O 3 .3.3 Al 2 O 3
  • M2 and MgF 2 are alternately applied from these materials, the first, that is the bottom, layer of M2 and the last layer of MgF 2 .
  • About eight to ten layers are required for the sandwich structure in order to achieve at least good results in the reflection reduction. With less than eight layers in the sandwich structure, one achieves a reflection-reducing layer for only small requirements. For a very good reflection reduction, more than ten layers are usually required in the sandwich structure.
  • the reflection-reducing layer has a sandwich structure made of three materials, the materials being M2 (a mixed substance from Merck from La 2 0 3. 3.3 Al 2 O 3 ), MgF 2 and Al 2 0 3 .
  • M2 a mixed substance from Merck from La 2 0 3. 3.3 Al 2 O 3
  • MgF 2 and Al 2 0 3 several layers of Al 2 O and M2 are alternately applied in the lower structure of the sandwich structure and several layers of M2 and MgF 2 are alternately applied in the upper structure of the sandwich structure.
  • the last layer consists of MgF 2 .
  • only a single layer of Al 2 O 3 namely as the bottom layer, is applied.
  • the reflection-reducing layer likewise has a sandwich structure made of three materials, the materials being M2 (a mixed substance from Merck from La 2 O 3 .3.3 Al 2 O 3 ), MgF 2 and Si0 2 is.
  • M2 a mixed substance from Merck from La 2 O 3 .3.3 Al 2 O 3
  • MgF 2 and Si0 2 is applied.
  • the last layer consists of MgF 2 .
  • the reflection-reducing layer is obtained if it has exactly three layers of SiO 2 and three layers of MgF 2 in the sandwich structure mentioned above, that is, alternating with M2. With this construction it was possible to achieve a reflection reduction layer with optimally low residual reflection values.
  • the inspection microscope equipped according to the invention with this reflection reduction layer has a significant improvement in the image quality in all three wavelength ranges used (VIS, i-line, DUV). The most significant increase in image quality was achieved in the DUV area. This avoided the use of a laser that was more powerful than the mercury vapor lamp and therefore much more expensive to buy and operate for the DUV area.
  • Other known reflection reduction layers which are designed for the i-line and the VIS range, are completely unsuitable for an inspection microscope because the residual reflection of such reflection reduction layers in the DUV range is approximately 15 to 20% and higher.
  • previously known inspection microscopes showed very low image brightness and image quality in very special applications, which particularly affected the DUV area.
  • the reflection reduction layer is designed for optical components made of quartz glass or of CaF 2 , as are typically used in an inspection microscope with the three spectral ranges VIS, i-line and DUV mentioned above. It can be used on optical components made of other materials that are also permeable to DUV. However, this will hardly happen in practice, since other DUV-permeable materials are usually not suitable for industrial use, because they are too expensive, too difficult to machine or under the usual environmental conditions (e.g. with regard to air humidity, temperature, Radiation resistance) are not durable enough.
  • the anti-reflective layer according to the invention is a multi-layer design which, for the first time, is coordinated with all three spectral ranges VIS, i-line and DUV and therefore inevitably requires more layers in comparison to the previously known, less demanding anti-reflective layers.
  • the layer design was developed using the optimization method according to Levenberg-Marquardt, which is available in the commercially available software for thin-film calculation FILM * STAR from FTG-Software.
  • the coating tests to verify the theoretical design were carried out on an APS 904 vapor deposition system from Leybold Systems AG, Hanau.
  • the first embodiment consists of a reflection-reducing layer which has a sandwich structure which consists of only two materials, namely M2 (a mixed substance from Merck from La 2 0 3 .3.3 Al 2 0 3 ) and MgF 2 . Starting with M2, several layers of M2 and MgF 2 are applied alternately, the last layer consisting of MgF 2 .
  • M2 a mixed substance from Merck from La 2 0 3 .3.3 Al 2 0 3
  • MgF 2 a mixed substance from Merck from La 2 0 3 .3.3 Al 2 0 3
  • this layer design good adhesion and abrasion resistance of this reflection-reducing layer is achieved by heating the optical components to be coated for the coating to approximately 250 ° C. to 300 ° C.
  • the relatively long heating and cooling times result in longer production times for the individual batches.
  • the reflection-reducing layer has a sandwich structure made of three materials, the materials being M2 (a mixed substance from Merck from La 2 0 3. 3.3 Al 2 0 3 ), MgF 2 and Al 2 0 3 .
  • M2 a mixed substance from Merck from La 2 0 3. 3.3 Al 2 0 3
  • MgF 2 and Al 2 0 3 are alternately applied in the lower structure of the sandwich structure.
  • the last layer consists of MgF 2 .
  • only a single layer of Al 2 O 3 namely as the bottom layer, is applied.
  • a further embodiment of the reflection-reducing layer has proven to be the technically most advantageous variant, which also has a sandwich structure made from three materials.
  • the materials M2 (a mixed substance from
  • Sandwich structure alternately applied several layers of M2 and Si0 2 .
  • M2 and Mg F 2 are applied alternately in the upper structure of the sandwich structure, the last layer consisting of Mg F 2 .
  • APS Advanced Plasma Source
  • MgF 2 is a fluoride, it cannot be evaporated with the help of ions. It is not possible to completely dispense with MgF 2 and thus the possibility of “cold coating”, since the low refractive index of 1.38 for MgF 2 and the associated low residual reflection properties cannot be dispensed with without deteriorating the properties of the reflection-reducing layer according to the invention.
  • the sandwich structure has exactly four layers of SiO 2 and three layers of MgF 2 in a reflection-reducing layer made of the three materials mentioned, ie
  • Sandwich structure is made up of a total of fourteen layers.
  • the last three low refractive layers made of MgF 2 result in a low residual reflection, while at the same time all other low refractive layers made of SiO 2 ensure a stable basis for the layer design. At the same time, less heating of the optical parts is sufficient.
  • the mean value of the reflection for the VIS wavelength range and the i-line was ⁇ 1.0% and the mean value for the reflection for the DUV wavelength range was ⁇ 0.5%.
  • the relatively high number of layers for a reflection-reducing layer could be reduced even further by using other materials with an even higher refractive index (compared to 1.38 for MgF 2 ).
  • Hf0 2 is known as a reasonably absorption-free material.
  • practical experience with this material has shown that absorption occurs at 240 nm, which increases to shorter wavelengths.
  • this material was dispensed with and only materials that are known to be absorption-free or low-absorption in the wavelength ranges mentioned were used.
  • a further reduction in the residual reflection of the reflection-reducing layer could be achieved by using even more layers in the sandwich structure.
  • significantly more layers would be required, so that the manufacturing expenditure for most applications would be too high.
  • the proportion of disturbing scattering effects and the residual absorptions in the layer system would increase.
  • FIG. 1 shows a schematic optical structure of an inspection microscope
  • 2 shows a schematic structure of a reflection-reducing layer with sixteen layers of M2 / MgF 2 / Si0 2
  • FIG. 3 a spectral profile of the residual reflection of a reflection-reducing layer with sixteen layers of M2 / MgF 2 / Si0 2 , which reduces the reflection for VIS and i-line and DUV
  • FIG. 4 a schematic structure of a reflection-reducing layer with fourteen layers of M2 / MgF 2 / Si0 2
  • FIG. B FIG.
  • FIG. 5 a spectral curve of the residual reflection of a reflection-reducing layer with fourteen layers of M2 / MgF 2 / Si0 2 , which reduces the reflection for VIS and i-line and DUV;
  • FIG. 6 a spectral profile of the residual reflection of a reflection-reducing layer with twelve layers of M2 / MgF 2 / Si0 2 , which reduces the reflection for VIS and i-line and DUV; (see Table C) FIG.
  • FIG. 7 a spectral profile of the residual reflection of a reflection-reducing layer with fourteen layers of M2 / MgF 2 / Si0 2 , which reduces the reflection for the entire range from VIS via i-line to DUV;
  • table D 8: a spectral curve of the residual reflection of a reflection-reducing layer with six layers of M2 / MgF 2 / Al 2 0 3 , which reduces the reflection for VIS and i-line and DUV;
  • FIG. 9 a spectral profile of the residual reflection of a reflection-reducing layer with fourteen layers of M2 / MgF 2 , which reduces the reflection for VIS and i-line and DUV;
  • table F a spectral profile of the residual reflection of a reflection-reducing layer with fourteen layers of M2 / MgF 2 , which reduces the reflection for VIS and i-line and DUV;
  • FIG. 1 shows a schematic optical structure of an inspection microscope.
  • An illuminating beam emanates from a light source 1 and reaches an illuminating beam splitter slider 2 via an illuminating optic (not shown here).
  • Various illuminating beam splitters 3 are arranged on the illuminating beam splitter slide 2, each of which is assigned to a specific wavelength range (VIS, DUV, i-line) of the illuminating light.
  • the beam splitter 3 located in the beam path in the illustration deflects the part of the illuminating light assigned to it in the direction of the objective 4. This deflected beam path is represented schematically by an optical axis 5.
  • the illumination beam generated in this way is focused by the objective 4 onto a sample 6 (for example a wafer).
  • a so-called autofocus beam splitter 7 is arranged in the beam path, via which the light of an autofocus device AF is coupled into the beam path by means of a beam splitter layer.
  • the autofocus light passes through the lens 4 and is also imaged on the sample 6 by the latter. From there, the autofocus light is directed back to the autofocus device AF via the beam splitter 7. From the light returning from the sample 6, an assessment criterion for the focus position of the illuminating light emanating from the light source 1 on the sample surface 6 is derived by the autofocus device AF. In the event of deviations from the ideal focus position, the distance between the objective 4 and the sample 6 can be changed such that an optimal focus occurs.
  • the illuminating light focused on the sample 6 returns from the sample 6 as an imaging beam path and passes through the objective 4, the autofocus beam splitter 7, the illuminating beam splitter 3 and a tube lens 8, which is arranged on a tube lens slide 9.
  • the tube lens slide 9 carries a plurality of tube lenses, each of which tube lens 8 is inserted into the beam path, which is optimized for the currently desired wavelength range.
  • the movement of the tube lens slide 9 is schematically indicated by a double arrow.
  • the imaging light then arrives at an eyepiece beam splitter 10 on an eyepiece beam splitter slide 11, at which the imaging light is divided, so that a first portion of the light reaches an eyepiece OK and a second portion of the light passes through an imaging optic 12 to a Bauernfeind prism 13 is steered.
  • the eyepiece beam splitter slide 11 carries a plurality of eyepiece beam splitters 10, which are assigned to the different wavelength ranges and can optionally be introduced into the beam path. The possibility of moving the eyepiece beam splitter slide 11 is indicated schematically by a double arrow.
  • a visual check of the microscope image generated by the sample 6 can be carried out by means of the eyepieces OK. It is also possible to display the microscope image on cameras.
  • the imaging beam is divided into a combined i-line / DUV component and a VIS component on the Bauernfeind prism 13.
  • the two beam components are each represented with wavelengths from specific cameras.
  • the i-line / DUV component is shown with a UV-sensitive DUV camera and the VIS component with a VIS camera that is matched to the visible spectral range. This gives the microscope user the opportunity to view the microscope image in a convenient manner, depending on the wavelength range set on one or the other camera.
  • the wavelength range is set by shifting the illuminating beam splitter 3, the tube lens slider 9 and the eyepiece beam splitter slider 11, which are hereinafter referred to collectively as the component changer.
  • this component changer 3, 9, 11 it is possible to the required Place in the microscope each wavelength range-specific optical components. These can be areas in the beam path along which only rays of a single one of the three wavelength ranges are guided.
  • the optical components on the respective component changer can also be components which are very specifically designed and corrected for the respectively assigned wavelength range.
  • the component changer can be designed, for example, as a linear slide or as a turntable, on which the wavelength range-specific optical components are arranged.
  • An additional slide 14 is arranged as an additional component slide between the tube lens slide 9 and the eyepiece beam splitter slide 11.
  • This additional slide 14 carries an optical compensating element 15 and an additional beam splitter 16, one of which can optionally be introduced into the beam path.
  • the additional beam splitter 14 when it is introduced into the beam path, serves to decouple a light portion of the imaging light from the beam path for an additional module of the microscope.
  • This additional module can be, for example, a confocal module or an additional camera. If this additional beam splitter 16 is not required, the optical becomes in its place by moving the additional slider 14
  • This optical compensation element 15 causes the imaging beam to pass through the same optical glass path length as would be the case if the additional beam splitter 16 were inserted. This prevents the imaging conditions in the subsequent beam path from changing when the additional beam splitter 16 is pushed out of the beam path.
  • optical components which are irradiated by rays of all wavelength ranges are arranged in a fixed manner. These are the autofocus beam splitter 7, the imaging optics 12 and the input surface of the Bauernfeind prism 13. Also the optical compensation element 15 and / or the same are the same for all three wavelength ranges. the additional beam splitter 16 when it is in the beam path. These components, which are fixed in the beam path, have to be optimized for all three wavelength ranges.
  • optical components of the inspection microscope and thus also the fixed optical components, are preferably made of quartz glass or CaF 2 , since these two materials are of the ultraviolet type
  • Wavelength-transmissive materials are the ones that are best suited for industrial processing and recycling.
  • the reflection reduction layer consists of several layers of different materials, which form a sandwich structure.
  • the layer systems used which are described in more detail below, are adapted to the substrates of the optical components by varying the layer thicknesses.
  • this reflection reduction layer is applied to all critical interfaces of the fixed optical components.
  • This is the beam splitter layer in the autofocus beam splitter 7, the beam splitter layer in the additional slider 14, the entry and exit surfaces of the optical compensation element 15, the front and rear lens surfaces the imaging optics 12, which can also be constructed from several elements, and the entrance surface of the Bauernfeind prism 13.
  • These layers are identified in FIG. 1 by thick lines and the designation R (for reflection-reducing layer).
  • the reflection-reducing effect of the layer remains with a variation of the angle of incidence at the respective layer by 0 ° ⁇ 15 ° and a process-related possible change in the refractive index of quartz and CaF 2 by + 0.02 or a variation in the thickness of the individual layers by ⁇ 5 % receive.
  • the layer structures are suitable for both quartz glass and CaF 2 with the same layer thicknesses. In this way, it is possible to coat all components fixed in the inspection microscope at their critical surfaces with one and the same reflection-reducing layer and at the same time to achieve an optimal reflection reduction. By using only a single layer, this represents a considerable simplification of production and thus a cost advantage. However, it is much more important that the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-reflective layer according to the invention significantly improves the inspection microscope equipped with this anti-
  • Image quality in all three wavelength ranges used (VIS, i-line, DUV). The clearest increase in image quality was achieved in the DUV area. The use of a laser, which is more powerful and at the same time significantly more expensive than the mercury vapor lamp, was avoided for the DUV area.
  • FIG. 2 shows a schematic structure of a reflection-reducing layer which consists of the three materials M2 (a mixed substance from Merck made of La 2 0 3 .3.3 Al 2 0 3 ) and MgF 2 and Si0 2 .
  • the layer consists of 16 layers, which are applied either to quartz or to CaF 2 .
  • the bottom layer consists of M2, then alternating layers of Si0 2 and M2 follow.
  • Layer No. 12 is made of MgF 2 for the first time and then it continues alternating with M2 and MgF 2 , with MgF 2 forming the last layer.
  • the layer shown here has the layer structure shown in Table A below.
  • the properties of the layer system are retained if the thicknesses of the individual layers do not vary by more than + 5%.
  • the layer design is equally applicable to quartz and CaF 2 .
  • FIG. 3 shows the spectral course of the residual reflection of the layer from FIG. 2.
  • the residual reflection values for the reflection reduction layer are shown on two substrates, once applied to the substrate quartz glass (bold line) and once applied to the substrate CaF 2 (thin solid line).
  • Fig. 4 shows a schematic structure of a reflection-reducing layer, which also consists of the three materials M2, MgF 2 and Si0 2 . This
  • the properties of the layer system are retained if the thicknesses of the individual layers do not vary by more than ⁇ 5%.
  • the layer design is equally applicable to quartz and CaF 2 .
  • this reflection-reducing layer also has an anti-reflective effect for the wavelength ranges VIS, i-line and DUV.
  • this layer with 14 layers and thus lower production costs is even better
  • the residual reflection curve in FIG. 6 clearly shows that by reducing the number of layers to 12 layers in the sandwich structure, a significant deterioration in the residual reflection in the area of the i-line and the VIS area has to be accepted, while the residual reflection in the DUV Area is still quite good. It can therefore be seen that any reduction in the layer structure, as would be desirable for thin-film production, is not possible.
  • Layer structure with 14 layers of M2, MgF 2 and Si0 2 shows the most favorable structure with regard to the anti-reflection effect with the largest possible spectral bandwidth.
  • FIG. 7 shows the spectral course of the residual reflection of a reflection-reducing layer, which likewise consists of the three
  • This layer also consists of 14 individual layers in the sandwich structure. For experimental purposes, this layer was specially designed to continuously reduce the entire area from the visible to the i-line to the DUV area. The corresponding layer structure is shown in Table D below. Table D
  • the properties of the layer system are retained if the thicknesses of the individual layers do not vary by more than + 5%.
  • the layer design is equally applicable to quartz and CaF 2 .
  • the properties of the layer system are retained if the thicknesses of the individual layers do not vary by more than ⁇ 5%.
  • the layer design is equally applicable to quartz and CaF 2 .
  • the layer has an anti-reflective effect for the wavelength ranges VIS, i-line and DUV, however the anti-reflective wavelength range around the DUV wavelength 250 nm is significantly narrower than in the layers already described above.
  • the reflection reduction in the i-line and visible wavelength range is also significantly worse than, for example, in the case of the layer which is described spectrally in FIG. 5. It can therefore be said that it is possible to achieve a reduction in reflection in the wavelength ranges mentioned with very few layers, although one has to make clear cuts in the range of applications.
  • the anti-reflective layer consists of 14 individual layers in the sandwich structure, as can be seen in Table F below.
  • the properties of the layer system are retained if the thicknesses of the individual layers do not vary by more than ⁇ 5%.
  • the layer design is equally applicable to quartz and CaF 2 .
  • the reflection reduction is effective for the wavelength ranges VIS, i-Line and DUV.
  • the quality of the reflection reduction is quite comparable to the layer that was described in FIG. 5.
  • the layer of M2 and MgF 2 that is, the design from Table F
  • MgF 2 that is, the layer design from Table B
  • the substrates have to be heated much higher during the coating process, as described earlier.
  • reflection-reducing layers can also be used in general on any optical elements, depending on the requirements for the required reflection reduction. This can also be optical

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microscoopes, Condenser (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

L'invention concerne un microscope de contrôle destiné à plusieurs gammes de longueurs d'onde et comprenant au moins un faisceau d'éclairage et au moins un faisceau de reproduction. Les composants optiques dans le faisceau d'éclairage et dans le faisceau de reproduction qui sont traversés par des rayons de toutes les gammes de longueurs d'onde sont recouverts d'une couche antireflet pour laquelle les gammes de longueurs d'onde à réflexion réduite sont la gamme de longueurs d'onde visible du domaine de la visibilité (VIS) jusqu'à 650 nm, la ligne i pour lambda =365 nm et la gamme de longueur d'onde ultraviolette de l'ultraviolet profond (DUV) de 240 nm à 270 nm. La couche antireflet a une structure en sandwich, constituée de différentes combinaisons de matériaux, comme par exemple M2/MgF2, M2/MgF2/SiO2 ou M2/MgF2/Al2O3, M2 étant une substance mélangée de la société Merck, constituée de La2O3.3,3 Al2O3. Les composants optiques antireflet sont constitués de préférence de verre de quartz ou de CaF2.
EP02706779A 2001-04-23 2002-03-22 Microscope de controle pour plusieurs gammes de longueurs d'onde et couche antireflet destinee a un microscope de controle pour plusieurs gammes de longueurs d'onde Withdrawn EP1381901A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10119909 2001-04-23
DE10119909A DE10119909B4 (de) 2001-04-23 2001-04-23 Inspektionsmikroskop für den sichtbaren und ultravioletten Spektralbereich und Reflexionsminderungsschicht für den sichtbaren und ultravioletten Spektralbereich
PCT/EP2002/003217 WO2002086579A1 (fr) 2001-04-23 2002-03-22 Microscope de controle pour plusieurs gammes de longueurs d'onde et couche antireflet destinee a un microscope de controle pour plusieurs gammes de longueurs d'onde

Publications (1)

Publication Number Publication Date
EP1381901A1 true EP1381901A1 (fr) 2004-01-21

Family

ID=7682439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02706779A Withdrawn EP1381901A1 (fr) 2001-04-23 2002-03-22 Microscope de controle pour plusieurs gammes de longueurs d'onde et couche antireflet destinee a un microscope de controle pour plusieurs gammes de longueurs d'onde

Country Status (6)

Country Link
US (1) US7274505B2 (fr)
EP (1) EP1381901A1 (fr)
JP (1) JP4012467B2 (fr)
DE (1) DE10119909B4 (fr)
TW (1) TW579434B (fr)
WO (1) WO2002086579A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019905B2 (en) * 2003-12-30 2006-03-28 3M Innovative Properties Company Multilayer reflector with suppression of high order reflections
DE102004025646A1 (de) * 2004-05-24 2005-12-22 Jenoptik Laser, Optik, Systeme Gmbh Hochreflektierender dielektrischer Spiegel und Verfahren zu dessen Herstellung
DE102004034845B4 (de) 2004-07-19 2006-05-18 Leica Microsystems Cms Gmbh Umschaltbares Mikroskop
CA2793855A1 (fr) * 2010-03-22 2011-09-29 Luxottica Us Holdings Corporation Depot de revetements pour lentille ophtalmique assiste par faisceau ionique
JP5603714B2 (ja) * 2010-09-02 2014-10-08 オリンパス株式会社 反射防止膜、レンズ、光学系、対物レンズ、及び光学機器
CA2908964C (fr) * 2013-03-15 2018-11-20 Sensory Analytics Procede et systeme de mesure en cours de production en temps reel de l'epaisseur d'un revetement
US9733465B2 (en) * 2015-02-12 2017-08-15 The Penn State Research Foundation Waveguides for enhanced total internal reflection fluorescence microscopy

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936136A (en) * 1970-12-29 1976-02-03 Nippon Kogaku K.K. Multilayer anti-reflection film for ultraviolet rays
US4960310A (en) * 1989-08-04 1990-10-02 Optical Corporation Of America Broad band nonreflective neutral density filter
JP3324780B2 (ja) * 1991-05-16 2002-09-17 オリンパス光学工業株式会社 紫外線顕微鏡
DE4219817A1 (de) * 1992-06-17 1993-12-23 Merck Patent Gmbh Aufdampfmaterial zur Herstellung mittelbrechender optischer Schichten
JP3224316B2 (ja) * 1993-09-07 2001-10-29 キヤノン株式会社 二波長反射防止膜
US5661596A (en) * 1994-02-03 1997-08-26 Canon Kabushiki Kaisha Antireflection film and exposure apparatus using the same
FR2750216B1 (fr) * 1996-06-21 1998-07-24 Commissariat Energie Atomique Empilement multicouche de materiaux fluorures, utilisable en optique et son procede de fabrication
US5911858A (en) * 1997-02-18 1999-06-15 Sandia Corporation Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors
US5937920A (en) * 1997-08-04 1999-08-17 Link Research & Development, Inc. Product dispensing system
US5960840A (en) * 1998-04-27 1999-10-05 Link Research And Development, Inc. Controlled product dispensing system
DE19831392A1 (de) * 1998-07-14 2000-02-03 Leica Microsystems Zweibereichs-Reflexionsminderung für den sichtbaren Spektralbereich und einer Wellenlänge von: (248 +/- 15)NM
JP2000227504A (ja) 1999-02-05 2000-08-15 Minolta Co Ltd 反射防止膜
US6196522B1 (en) * 1999-04-02 2001-03-06 Ecolab, Inc. Geometric lockout coupler
DE19931954A1 (de) * 1999-07-10 2001-01-11 Leica Microsystems Beleuchtungseinrichtung für ein DUV-Mikroskop
JP2001074904A (ja) * 1999-09-02 2001-03-23 Canon Inc 二波長反射防止膜
JP4524877B2 (ja) * 2000-07-17 2010-08-18 コニカミノルタホールディングス株式会社 眼鏡用レンズ
JP2003279702A (ja) * 2002-03-19 2003-10-02 Olympus Optical Co Ltd ２波長反射防止膜および該２波長反射防止膜を施した対物レンズ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02086579A1 *

Also Published As

Publication number Publication date
JP2004524585A (ja) 2004-08-12
TW579434B (en) 2004-03-11
US7274505B2 (en) 2007-09-25
DE10119909A1 (de) 2002-10-31
WO2002086579A1 (fr) 2002-10-31
DE10119909B4 (de) 2005-04-21
JP4012467B2 (ja) 2007-11-21
US20040145803A1 (en) 2004-07-29

Similar Documents

Publication Publication Date Title
EP1260835B1 (fr) Filtre pour l'atténuation de rayons ultraviolets
EP1260845A2 (fr) Objectif de réduction catadioptrique
EP1006373A2 (fr) Objectif comportant des lentilles en matériaux cristallins et dispositif d'exposition par projection pour la microlithographie
DE102008002024A1 (de) Optisches Element, Projektionsobjektiv und Projektionsbelichtungsanlage damit
DE102012103076B4 (de) Linsensystem für ein Kameramodul mit Infrarotfilter und Kameramodul mit einem Linsensystem sowie Verfahren zur Herstellung eines Linsensystems
DE102011075579A1 (de) Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
DE3831950A1 (de) Mikroskop mit spiegelobjektiv und abbildungsverfahren
DE102007054731A1 (de) Optisches Element zur Reflexion von UV-Strahlung, Herstellungsverfahren dafür und Projektionsbelichtungsanlage damit
DE102012216284A1 (de) Mikrolithographische Projektionsbelichtungsanlage
EP1069449B1 (fr) Système d'illumination d'un microscope pour l'ultraviolet profond
DE3915868C2 (de) UV-taugliches Trockenobjektiv für Mikroskope
EP1223437A2 (fr) Couche antiréfléchissante pour lumière ultraviolette
WO2018153729A1 (fr) Objectif catadioptrique et système optique muni de ce type d'objectif
DE10119909B4 (de) Inspektionsmikroskop für den sichtbaren und ultravioletten Spektralbereich und Reflexionsminderungsschicht für den sichtbaren und ultravioletten Spektralbereich
DE19931949A1 (de) DUV-taugliches Mikroskop-Objektiv mit parfokalem IR-Fokus
WO2007025783A2 (fr) Systeme microlithographique d'eclairage par projection
DE102016203749B4 (de) Optisches System, insbesondere für die Mikroskopie
DE102010006326A1 (de) Anordnung zur Verwendung in einer Projektionsbelichtungsanlage für die Mikrolithographie mit einem reflektiven optischen Element
DE10117167B4 (de) Inspektionsmikroskop und Objektiv für ein Inspektionsmikroskop
DE10033142C2 (de) Erregerfilter für ein Endoskop zur Fluoreszenzuntersuchung
WO2010034367A1 (fr) Miroir diélectrique et son procédé de fabrication ainsi qu'une installation d'exposition par projection pour la microlithographie avec un miroir de ce type
DE10136620A1 (de) Schmalbandiger Spektralfilter und seine Verwendung
DE10109242C1 (de) Schmalbandiger Spektralfilter und seine Verwendung
DE19929701A1 (de) Objektiv mit Kristall-Linsen
DE19619358C2 (de) Verwendung eines optischen Filters mit Interferenzfilter-Mehrfachschicht

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20031008

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: LEICA MICROSYSTEMS CMS GMBH

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20090213

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20090624