EP1378008A2 - Module de puissance - Google Patents

Module de puissance

Info

Publication number
EP1378008A2
EP1378008A2 EP01985858A EP01985858A EP1378008A2 EP 1378008 A2 EP1378008 A2 EP 1378008A2 EP 01985858 A EP01985858 A EP 01985858A EP 01985858 A EP01985858 A EP 01985858A EP 1378008 A2 EP1378008 A2 EP 1378008A2
Authority
EP
European Patent Office
Prior art keywords
power module
carrier body
geometric elements
electronic components
circuit arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP01985858A
Other languages
German (de)
English (en)
Inventor
Hermann Bäumel
Werner Graf
Hermann Kilian
Bernhard Schuch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Conti Temic Microelectronic GmbH
Original Assignee
Conti Temic Microelectronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conti Temic Microelectronic GmbH filed Critical Conti Temic Microelectronic GmbH
Publication of EP1378008A2 publication Critical patent/EP1378008A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Definitions

  • electronic assemblies are used for different tasks and applications;
  • electronic modules designed as power modules are used for control purposes, for example for speed and power control of electric motors.
  • Such power modules include electronic components for providing the required power (for example typically in the kW range for electric motors) and for providing control signals and / or for evaluating measurement signals.
  • active components such as power components operating in switching operation with high current change speeds (in particular integrated circuits as circuit breakers), and passive components such as
  • Resistors e.g. shunts for current measurement
  • capacitors have circuitry of the power module to avoid overvoltages, a low-induction structure required.
  • the circuit arrangement of the power module is usually applied to an insulating carrier body (an insulating substrate), which generally consists of a ceramic material.
  • an insulating carrier body an insulating substrate
  • the carrier body is placed on an example.
  • massive metal heat sink e.g. a copper plate or aluminum plate
  • a connecting layer e.g.
  • connection layer between the support body and the heat sink is required (especially in the case of a large-area support body) to equalize the stress (This results in a high thermal resistance, in particular also inclusions in the connection layer which have a negative influence on the thermal conductivity, for example blowholes in a solder layer), so that there is poor heat transfer between the electronic components of the circuit arrangement and the heat sink due to the thermal resistances formed thereby is and the dissipation of the power loss (heat dissipation) of the electronic components is therefore difficult, on the other hand (especially in a large temperature range for the egg Power module and the resulting temperature changes) often affects the connection between the support body and the heat sink,
  • the invention has for its object to provide a power module with a simple structure, simple manufacture, low costs, high reliability and advantageous thermal properties.
  • a (thick) carrier body consisting of an insulating material with high thermal conductivity, for example. as a ceramic carrier made of a ceramic material, e.g. made of aluminum oxide AkO * or aluminum nitride AIN; the carrier body can be manufactured in mold-falling tools, for example. by means of dry presses or by injection molding with subsequent sintering.
  • the thickness of the The carrier body is selected in accordance with its size (surface area) and the mechanical load caused by the installation of the power module (for example by screwing) at its place of use and the cooling (for example by the pressure of the coolant in a cooling circuit connected to the power module).
  • a structured sub-area of the ceramic carrier body acts as a cooling element, in that on its underside, geometric elements made from the material of the carrier body are provided as an array in a specific arrangement and with a specific geometric shape (for example cone-shaped or diamond-shaped) Carrier body with a (metallic) interconnect structure
  • Conductors, pick-up points, contact points and connection points applied directly i.e. without intermediate layers on the surface of the ceramic carrier body
  • active soldering Active Metal Bonding
  • chemically soldering the interconnect structure directly onto the surface of the carrier body via an oxide bond or by the DCB method
  • the electronic components of the circuit arrangement can be electrically conductively connected to one another and / or to connection contacts via the interconnect structure.
  • connection contacts are attached to the connection points of the guideway structure, which are used for the (external) connection of the
  • Power module with other modules or components serve.
  • the heat dissipation of the circuit arrangement takes place from the carrier body.
  • the border of the cooling element which is designed as an array with a multiplicity of (identically) structured geometric elements, is adapted to the shape of the carrier body; the size (area) of the array depends on the power loss to be dissipated, ie the required cooling function must be guaranteed by the geometric elements of the array.
  • a certain number of geometric elements is spaced equidistantly from one another to form a row, while two adjacent rows of geometric elements are offset from one another (preferably such that the geometric elements of one row are positioned in the gap of the adjacent row defined by the spacing of the geometric elements) ).
  • the shape, number and arrangement of the geometric elements are adapted to the particular application of the power module and to the cooling capacity required.
  • the geometric elements are e.g. formed as diamonds, truncated pyramids, cones or lenses and have, for example. a slightly bevelled side.
  • the cooling element is produced in the same manufacturing step and in the same tool as the carrier body, for example. in mold-falling tools, e.g. by means of dry pressing or by means of injection molding with subsequent sintering; ie the geometric elements made of the same material as the carrier body are formed together with the latter from a template having a corresponding shape.
  • the cooling element or the array of geometric elements is, in particular, integrated in a cooling circuit, for example. the array is cooled by the coolant of the cooling circuit (e.g.
  • flow channels for the coolant of the cooling circuit are predetermined by the geometric elements of the array, in that the coolant flows between the geometric elements (between the different rows of the geometric elements).
  • Heat transfer from the carrier body to the coolant can be set via the cooling element.
  • the power module combines several advantages:
  • the carrier body serves both for heat dissipation and as a circuit carrier (substrate) for the electronic components of the circuit arrangement and for sealing in the case of a direct arrangement of the power module in a cooling circuit and thus the integration of the array of geometric elements in the cooling circuit; Thermal problems can be avoided by the direct connection of the electronic components of the circuit arrangement on the carrier body and the direct connection of the cooling element to the carrier body without intermediate layers (therefore low thermal resistance), so that the power module is highly reliable and has a long service life.
  • the predeterminable structure of the cooling element ensures adequate heat dissipation of the electronic components of the circuit arrangement, in particular a variably selectable heat dissipation by appropriate design of the cooling element and thus of the geometric elements, so that, in particular,
  • the flow rate of the coolant and the pressure loss in the cooling circuit can be adapted to the requirements.
  • the production outlay is low, since simple production of the cooling element is possible (in particular together with the carrier body in one production step using the same tool) and production problems can be avoided, so that low production costs are also incurred, in particular also through the use of simple and inexpensive materials.
  • FIG. 1 shows a view of the top of the power module
  • FIG. 2 shows a sectional view of the power module
  • FIG. 3 shows a view of the bottom of the power module.
  • the power module 1 is, for example. used as a power converter for liquid-cooled electric motors in the motor vehicle sector (output, for example, 10 kW); due to the Resulting high power loss, the power converter 1 is coupled directly to the liquid cooling on the electric motor, ie integrated in the cooling circuit of the electric motor operated with the coolant water.
  • the power converter 1 consists of the following components:
  • Ceramic carrier for example.
  • Carrier body 2 consisting of AIN as circuit carrier with the dimensions of example. 90 mm x 57 mm x 3 mm, which is integrated directly into the cooling circuit and thus also seals the cooling circuit against the other components of the power converter 1.
  • Conductor structure 7 consisting of copper (thickness, for example, 0.3 mm) with conductor tracks 8, receiving points 1 3, contact points 9 and connecting points 1 1 applied, for example. chemically soldered onto the carrier body 2 by means of a direct (active) soldering process.
  • the electronic components 5 of the circuit arrangement 6 are contacted, i.e. electrically conductively connected to the interconnect structure 7; at the connection points 1 1, connection contacts 1 2 are attached, for example. soldered by means of the solder 20.
  • circuit arrangement 6 which has electronic components 5 and which, in particular, has power components for realizing the converter function and the resulting control of the electric motor.
  • the electronic components 5 of the circuit arrangement ⁇ are applied as silicon chips at the receiving points 13 on the interconnect structure 7 (for example soldered by means of a soft soldering process) and for example. Connected to the contact points 9 of the conductor tracks 8 of the conductor track structure 7 via bond connections 10 and / or to other electronic components 5.
  • the power loss of the electronic components 5 of the circuit arrangement ⁇ (in particular of the power components) is dissipated via the carrier body 2 and the cooling element 3 into the cooling circuit through which the coolant flows.
  • the cooling element 3 On the underside 15 of the carrier body 2, the one produced together with the carrier body 2 in a mold-removing tool by pressing, for example. made of AIN, cooling element 3 arranged.
  • the cooling element 3 is structured in a certain way to form an array 21 of geometric elements 4, the geometric elements 4 of the cooling element 3, for example. have a diamond-like shape, the side surfaces of which are slightly beveled.
  • the geometric elements 4 of the cooling element 3 are in a certain number in one
  • Ex. Are in a row 1 7 on a length of ex. 80 mm 1 2 geometric elements 4 arranged one behind the other and with a width of e.g. 40 mm 6 different rows 1 7 with geometric elements 4 arranged offset to one another.
  • the geometric elements 4 of the cooling element 3 with a height of e.g. 6 mm protrude into the cooling circuit of the electric motor and the coolant flows through water, a certain flow direction and a certain flow rate of the cooling water being predetermined in accordance with the flow channels 18 formed by the arrangement of the geometric elements 4.

Abstract

L'objectif de l'invention est de créer un module de puissance qui soit de conception simple et économique tout en garantissant un fonctionnement sûr. A cet effet, un circuit comprenant au moins un composant électronique est disposé sur un substrat. Une structure conductrice est formée sur la face supérieure du substrat et un élément de refroidissement structuré constitué du matériau du substrat est disposé sur la face inférieure dudit substrat. L'invention concerne également l'utilisation de ce module de puissance comme convertisseur de puissance pour des moteurs électriques.
EP01985858A 2001-01-20 2001-12-10 Module de puissance Ceased EP1378008A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10102621 2001-01-20
DE10102621A DE10102621B4 (de) 2001-01-20 2001-01-20 Leistungsmodul
PCT/EP2001/014464 WO2002058142A2 (fr) 2001-01-20 2001-12-10 Module de puissance

Publications (1)

Publication Number Publication Date
EP1378008A2 true EP1378008A2 (fr) 2004-01-07

Family

ID=7671269

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01985858A Ceased EP1378008A2 (fr) 2001-01-20 2001-12-10 Module de puissance

Country Status (4)

Country Link
US (1) US6952347B2 (fr)
EP (1) EP1378008A2 (fr)
DE (1) DE10102621B4 (fr)
WO (1) WO2002058142A2 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10204200A1 (de) * 2002-02-01 2003-08-21 Conti Temic Microelectronic Leistungsmodul
DE10349775B4 (de) * 2003-10-24 2006-05-11 Sitronic Gmbh & Co. Kg Schaltungsträger für Leuchtdioden
US9153960B2 (en) 2004-01-15 2015-10-06 Comarco Wireless Technologies, Inc. Power supply equipment utilizing interchangeable tips to provide power and a data signal to electronic devices
DE102004024920B4 (de) * 2004-05-19 2009-06-10 Trafag Ag Drucksensor
DE102004057421B4 (de) * 2004-11-27 2009-07-09 Semikron Elektronik Gmbh & Co. Kg Druckkontaktiertes Leistungshalbleitermodul für hohe Umgebungstemperaturen und Verfahren zu seiner Herstellung
US7236368B2 (en) * 2005-01-26 2007-06-26 Power-One, Inc. Integral molded heat sinks on DC-DC converters and power supplies
US7593230B2 (en) * 2005-05-05 2009-09-22 Sensys Medical, Inc. Apparatus for absorbing and dissipating excess heat generated by a system
TWI449137B (zh) * 2006-03-23 2014-08-11 Ceramtec Ag 構件或電路用的攜帶體
DE102006028675B4 (de) 2006-06-22 2008-08-21 Siemens Ag Kühlanordnung für auf einer Trägerplatte angeordnete elektrische Bauelemente
US7996987B2 (en) * 2006-10-17 2011-08-16 Broadcom Corporation Single footprint family of integrated power modules
DE102008018841A1 (de) 2008-04-15 2009-10-22 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung und Aufbau eines Leistungsmoduls
JP5345017B2 (ja) 2009-08-27 2013-11-20 三菱電機株式会社 電力用半導体装置とその製造方法
US8203839B2 (en) * 2010-03-10 2012-06-19 Toyota Motor Engineering & Manufacturing North America, Inc. Cooling devices, power modules, and vehicles incorporating the same
US20110228486A1 (en) * 2010-03-17 2011-09-22 Comarco Wireless Technologies, Inc. Power supply with low touch-temperature surface
DE102010062944A1 (de) * 2010-12-13 2012-06-14 Zf Friedrichshafen Ag Leiterplatte und Verfahren zur Herstellung einer solchen
DE102014107217A1 (de) * 2014-05-19 2015-11-19 Ceram Tec Gmbh Leistungshalbleitermodul
DE102015215682A1 (de) * 2015-08-18 2016-09-08 Continental Automotive Gmbh Kühlvorrichtung, Leistungselektronikanordnung mit einer Kühlvorrichtung
DE102016202547A1 (de) * 2016-02-18 2017-08-24 Zf Friedrichshafen Ag Integriertes Steuergerät für ein Fahrzeug und Verfahren zum Herstellen eines integrierten Steuergerätes für ein Fahrzeug
AT519741B1 (de) * 2017-07-18 2018-10-15 Zkw Group Gmbh Thermische Kopplung von Kupferspreizflächen
EP3671828A1 (fr) * 2018-12-21 2020-06-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Refroidissement de micropuce par évaporation
DE102019202425A1 (de) 2019-02-22 2020-10-22 Volkswagen Aktiengesellschaft Anordnung zum gleichmäßigen Kühlen von Bauteilen und Kraftfahrzeug mit zumindest einer Anordnung
USD942403S1 (en) * 2019-10-24 2022-02-01 Wolfspeed, Inc. Power module having pin fins
USD963574S1 (en) * 2020-04-10 2022-09-13 Fukushima Sic Applied Engineering Inc. Power supply
DE102021208579A1 (de) 2021-08-06 2023-02-09 Zf Friedrichshafen Ag Getriebe für ein Kraftfahrzeug

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT383228B (de) * 1978-07-21 1987-06-10 Bbc Brown Boveri & Cie Kuehlelement mit zwangsumlaufkuehlung fuer halbleiterbauelemente der leistungselektronik
US5158912A (en) * 1991-04-09 1992-10-27 Digital Equipment Corporation Integral heatsink semiconductor package
US5447189A (en) * 1993-12-16 1995-09-05 Mcintyre; Gerald L. Method of making heat sink having elliptical pins
US6039114A (en) * 1996-01-04 2000-03-21 Daimler - Benz Aktiengesellschaft Cooling body having lugs

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766440A (en) * 1972-08-11 1973-10-16 Gen Motors Corp Ceramic integrated circuit convector assembly
NL174393C (nl) 1975-04-18 1984-06-01 Burnham Europa Bv Warmtewisselaar voor het verwarmen van een vloeistof, zoals water, door middel van een heet gas.
JPS5769768A (en) 1980-10-20 1982-04-28 Fujitsu Ltd Equipping structure of electronic circuit unit containing high electric power parts
US4546410A (en) * 1983-10-31 1985-10-08 Kaufman Lance R Circuit package with membrane, containing thermoconductive material, ruptured against a heat sink
JPH02276264A (ja) * 1989-04-18 1990-11-13 Nec Corp ヒートシンク付セラミックパッケージ
US5041902A (en) * 1989-12-14 1991-08-20 Motorola, Inc. Molded electronic package with compression structures
DE9017041U1 (fr) * 1990-12-18 1991-03-07 Akyuerek, Altan, Dipl.-Ing., 8560 Lauf, De
DE59107655D1 (de) * 1991-02-22 1996-05-09 Asea Brown Boveri Abschaltbares Hochleistungs-Halbleiterbauelement
JPH05136304A (ja) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp 半導体モジユール及びそれを用いたパワー制御装置
US5294831A (en) * 1991-12-16 1994-03-15 At&T Bell Laboratories Circuit pack layout with improved dissipation of heat produced by high power electronic components
US5212627A (en) * 1992-01-31 1993-05-18 Motorola, Inc. Electronic module housing and assembly with integral heatsink
US6140571A (en) * 1992-08-06 2000-10-31 Pfu Limited Heat-generating element cooling device
US6326678B1 (en) * 1993-09-03 2001-12-04 Asat, Limited Molded plastic package with heat sink and enhanced electrical performance
DE19527867A1 (de) * 1995-07-29 1997-01-30 Schulz Harder Juergen Metall-Substrat für elektrische und/oder elektronische Schaltkreise
DE19817333C5 (de) * 1998-04-18 2007-04-26 Conti Temic Microelectronic Gmbh Elektrische Antriebseinheit aus Elektromotor und Elektronikmodul
US6337228B1 (en) * 1999-05-12 2002-01-08 Amkor Technology, Inc. Low-cost printed circuit board with integral heat sink for semiconductor package
US6729383B1 (en) * 1999-12-16 2004-05-04 The United States Of America As Represented By The Secretary Of The Navy Fluid-cooled heat sink with turbulence-enhancing support pins
US20020018338A1 (en) * 2000-01-11 2002-02-14 Mccullough Kevin A. Insert molded heat sink assembly
US6212074B1 (en) * 2000-01-31 2001-04-03 Sun Microsystems, Inc. Apparatus for dissipating heat from a circuit board having a multilevel surface
US6614123B2 (en) * 2001-07-31 2003-09-02 Chippac, Inc. Plastic ball grid array package with integral heatsink

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT383228B (de) * 1978-07-21 1987-06-10 Bbc Brown Boveri & Cie Kuehlelement mit zwangsumlaufkuehlung fuer halbleiterbauelemente der leistungselektronik
US5158912A (en) * 1991-04-09 1992-10-27 Digital Equipment Corporation Integral heatsink semiconductor package
US5447189A (en) * 1993-12-16 1995-09-05 Mcintyre; Gerald L. Method of making heat sink having elliptical pins
US6039114A (en) * 1996-01-04 2000-03-21 Daimler - Benz Aktiengesellschaft Cooling body having lugs

Also Published As

Publication number Publication date
US6952347B2 (en) 2005-10-04
WO2002058142A3 (fr) 2003-11-06
WO2002058142A2 (fr) 2002-07-25
DE10102621B4 (de) 2006-05-24
US20040057208A1 (en) 2004-03-25
DE10102621A1 (de) 2002-08-01

Similar Documents

Publication Publication Date Title
DE10102621B4 (de) Leistungsmodul
EP0221399B1 (fr) Module semi-conducteur de puissance
EP1982355B1 (fr) Dispositif électronique de puissance
DE102017200256B4 (de) Elektrodenanschluss, Halbleitervorrichtung und Leistungswandlungsvorrichtung
DE10162966A1 (de) Leistungshalbleitermodul
WO2010136017A1 (fr) Unité modulaire électrique refroidie
WO1998032213A2 (fr) Module de puissance comportant un circuit pourvu de composants a semiconducteur actifs et de composants passifs, et son procede de production
DE10157362B4 (de) Leistungsmodul und Verfahren zu seiner Herstellung
DE102016115221A1 (de) Verfahren zum Verbinden von mindestens zwei Substraten zur Bildung eines Moduls
DE10204200A1 (de) Leistungsmodul
WO2007045112A1 (fr) Boîtier de puissance pour puces à semi-conducteur et configuration dudit boîtier pour la dissipation de chaleur
EP3751602A1 (fr) Substrat métallique isolé pour un groupe électronique de puissance
DE19529237C1 (de) Schaltungsanordnung
WO2018134332A1 (fr) Module semi-conducteur avec plaque de fond à courbure creuse
WO2018037047A1 (fr) Module de puissance, procédé de fabrication et circuit électronique de puissance
DE10134187A1 (de) Kühleinrichtung für Halbleitermodule
DE10217214B4 (de) Kühlanordnung für eine Schaltungsanordnung
DE10125697B4 (de) Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls
DE19931694B4 (de) Verfahren zum Herstellen von elektrischen Schaltkreisen oder Modulen sowie elektrischer Schaltkreis oder elektrisches Modul hergestellt nach diesem Verfahren
EP1166355A1 (fr) Module multipuce
DE102019108932B4 (de) Halbleitermodul und Verfahren zu seiner Herstellung
DE10121969C1 (de) Schaltungsanordnung in Druckkontaktierung und Verfahren zu seiner Herstellung
DE10102619A1 (de) Leistungsmodul
DE19735074A1 (de) Leistungsmodul
WO2003071601A2 (fr) Module de circuit et procede de fabrication

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030612

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

17Q First examination report despatched

Effective date: 20050223

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: CONTI TEMIC MICROELECTRONIC GMBH

REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20190530