EP1373129A2 - Procede de production de detecteurs micromecaniques, et detecteurs ainsi obtenus - Google Patents

Procede de production de detecteurs micromecaniques, et detecteurs ainsi obtenus

Info

Publication number
EP1373129A2
EP1373129A2 EP02729780A EP02729780A EP1373129A2 EP 1373129 A2 EP1373129 A2 EP 1373129A2 EP 02729780 A EP02729780 A EP 02729780A EP 02729780 A EP02729780 A EP 02729780A EP 1373129 A2 EP1373129 A2 EP 1373129A2
Authority
EP
European Patent Office
Prior art keywords
openings
cavity
substrate
semiconductor substrate
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP02729780A
Other languages
German (de)
English (en)
Inventor
Hubert Benzel
Heribert Weber
Hans Artmann
Frank Schaefer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1373129A2 publication Critical patent/EP1373129A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Definitions

  • the invention is based on a method for producing micromechanical sensors or of micromechanical sensors produced therewith according to the category of the independent claims. From an article by Mizushir ⁇ a et al. Applied Physics Letter, Vol. 77, No. 20, November 13, 2000, page 3290 ff. A method is already known in which cavities are created in the semiconductor substrate by introducing openings and a subsequent temperature treatment. However, these structures should only be used for the use of integrated circuits. A large number of other manufacturing processes, in particular the so-called sacrificial layer technology, are known for the production of sensors. A silicon layer is created on a sacrificial layer. The sacrificial layer is then removed again after structuring the silicon layer.
  • the method according to the invention with the features of the independent patent claim has the advantage, that a particularly simple method for producing micromechanical sensors is specified.
  • the micromechanical sensors form sensor elements that are formed from single-crystal silicon.
  • the method is also suitable for integrating circuit elements.
  • the openings made should be deeper than the diameter, preferably have a diameter of less than 1 ⁇ m and be deeper than 2 ⁇ m. Adequate mobility of the silicon atoms on the substrate is ensured by sufficiently high temperatures.
  • the actual sensor elements are then formed by further processing steps. The deposition of an epitaxial layer and the introduction of dopants are particularly advantageous.
  • FIGS. 1 to 4 show a first process sequence and FIGS. 5 to 8 a further process sequence for creating cavities
  • FIG. 9 shows a first example of a sensor according to the invention.
  • FIG. 10 to 12 further process steps for generating a second example of a sensor according to the invention, FIG. 13 another example of a sensor according to the invention and FIG. 14 another sensor according to the invention. description
  • FIGS. 1 to 4 A process sequence is shown in FIGS. 1 to 4, which clarifies the method according to the invention.
  • 1 shows a cross section through a silicon substrate 1, into which an opening 2 is made.
  • the opening 2 is designed as a long, thin blind hole, which typically has a diameter of less than 1 ⁇ m and extends more than 1 ⁇ m into the depth of the silicon substrate 1.
  • the silicon substrate 1 is, in particular, a single-crystalline silicon substrate.
  • Such openings 2 can be etched by reactive ion, i.e. Irradiating the surface of the silicon substrate 1 with ions of a gas which form a gaseous chemical compound with the
  • the silicon substrate 1, as shown in cross section in FIG. 1, is then subjected to a temperature treatment. Temperatures are selected at which silicon atoms can overlap, i.e. Temperatures of more than 900 ° C. A temperature treatment of 1100 ° C. is particularly suitable, for example. Such a temperature treatment is preferably carried out in a hydrogen atmosphere, because so
  • Oxides that form on the surface of silicon 1 can be removed from the surface of silicon 1 or from the walls of opening 2.
  • the mobility of the silicon atoms is increased by the high temperatures, so that a rearrangement takes place in such a way that the surface of the Silicon is reduced.
  • the surface of the silicon substrate 1 still has a recess 4 and the cavity 3 still has an oval shape.
  • this state is changed even further and an almost spherical cavity 3 is formed from which no recess 4 is also arranged. This state is shown in FIG. 4.
  • the process according to the invention is not only limited to single-crystalline silicon, but can also be used in other semiconductor materials such as, for. Eg GaAs are carried out. Polycrystalline semiconductor material can also be widely used. Semiconductors have the advantage that conductive and non-conductive areas can be produced by further processing steps, as is necessary for the production of sensors.
  • FIGS. 5 to 8 show how this method can be used to produce a membrane that overlies a membrane
  • FIG. 5 shows a cross section through a silicon substrate 1, in which a multiplicity of openings 2, which are designed as narrow deep blind holes, are made.
  • FIG. 7 shows a top view of the substrate according to FIG. 5. As can be seen in FIG. 7, a multiplicity of openings 2 are arranged at a close distance from one another, the distance between the openings 2 roughly corresponding to the diameter of the openings 2. If a temperature treatment is carried out on the basis of FIGS. 5 and 7, silicon atoms are rearranged from each of the openings 2, as described for FIGS. 1 to 4. The result is a coherent, large-area cavity 3, as shown in FIG.
  • membrane area 4 which consists of a thin layer of silicon. If the silicon substrate 1 is a single-crystalline silicon substrate, then this membrane 4 is also formed by single-crystal silicon, since the silicon atoms are rearranged at the corresponding crystal lattice sites. The monocrystalline structure of the silicon substrate 1 is thus also retained in the membrane region 4 above the cavity 3.
  • a plan view is shown in FIG. 8, the cavity 3, of course, not being visible in a plan view.
  • the planar cavity 3 shown in FIG. 8 is therefore not visible in the top view, but it is nevertheless shown in FIG. 8 to give an idea of how, starting from the openings 2 visible in FIG Depth of the silicon substrate is formed.
  • FIG. 9 shows a first example of a sensor according to the invention, which is provided by a
  • Silicon substrate 1 goes out.
  • the silicon substrate 1 has a cavity 3 and a membrane region 4 arranged above it.
  • an epitaxial layer 11 is applied, which covers the entire upper side of the silicon substrate 1 including the membrane region 4. Since the silicon substrate 1 is single-crystal and the single-crystal silicon structure is also present in the area of the membrane 4, the epitaxial layer 11 grows single-crystal. Typical thicknesses for such an epitaxial layer 11 are of the order of a few ⁇ m to a few 10 ⁇ m. Dopants are then introduced onto the top of the epitaxial layer 11 by customary processes.
  • doping zones 12 for piezoresistive resistance elements can be introduced, which are then connected to contact openings 14 of a passivation layer 15 by means of heavily doped supply zones 13.
  • the piezoresistive resistance elements 12 are arranged in such a way that they are arranged in the epitaxial layer 11 in the edge regions of the cavity 3.
  • the heavily doped lead elements 13 can then be used to tap electrical signals at the contact openings 14 via metal conductor tracks (not shown), in particular the electrical signals
  • the piezoresistive elements 13 can be measured. Because of their arrangement relative to the cavity 3, the piezoresistive elements 12 are located in areas in which strong mechanical stresses occur if the epitaxial layer 11 and the membrane area 4 are deformed comes over the cavity 3. Such a deformation can arise, for example, in that the ambient pressure deviates from the pressure enclosed in the cavity 3. A device is thus created which detects a change in the ambient pressure relative to the pressure in the cavity 3, ie it is a pressure sensor.
  • the electrical signals of the piezoresistive elements 12 can be fed to an evaluation circuit 20, which is likewise formed in the epitaxial layer 11 and in the silicon substrate 1, by means of metallic conductive layers on the upper side of the passivation layer 15.
  • the metallic conductor tracks on the upper side of the passivation layer 15 are not shown.
  • the electrical evaluation circuits are only indicated by the diffusion zones 21, 22 and 23 and in no way correspond to real circuit elements.
  • dopant has already been introduced into the top of the silicon substrate 1 before the epitaxial layer 11 is deposited.
  • the doping zones 22 and 23 are customary doping zones as are introduced in the production of conventional semiconductor elements. Processes are used that are also used to manufacture the piezoresistive elements 12 and the heavily doped leads 13.
  • the method according to the invention for producing the cavity 3 can be used without problems with the usual methods for producing semiconductor structures, so that both the cavities 3 and conventional circuit elements 20 in and. same process sequence can be created.
  • FIGS. 10, 11 and 12 A further production method for a pressure sensor is shown in FIGS. 10, 11 and 12.
  • dopant is introduced into the silicon substrate 1.
  • the starting point is a homogeneously doped silicon substrate, for example a p-doped silicon substrate, in which a doping 30 of the opposite type, for example an n-doping, is then introduced.
  • the openings 2 are then introduced as in FIGS. 5 to 7, the region in which openings 2 are arranged extending both in the p-doped substrate 1 and in the introduced n-doping 30.
  • the depth of the openings 2 is less than the depth of the doping 30, so that the doping 30 is still below the openings 2.
  • FIG. 10a This state is shown in FIG. 10a.
  • the temperature treatment then creates a cavity 3, which extends in the interior of the substrate 1 and which cuts through the introduced n-doping 30 horizontally, so that the silicon has an n-doping above and below the cavity 3.
  • the cavity 3 cuts through the doping region in a horizontal direction, so to speak.
  • An upper doping 31 and a lower doping 32 are thus created.
  • FIG. 10 b shows a cross section through the silicon substrate 1 created in this way, in which an upper n-doping 31 is electrically insulated from the lower n-doping 32 by the cavity 3 and the redoping zone 33.
  • a top view of FIG. 10b is shown in FIG.
  • the redoping 33 is arranged such that it is arranged electrically between the n-doping 32 and the n-doping 31.
  • the redoping 33 can also be arranged such that it completely encompasses the upper n-doping 31.
  • FIGS. 10 and 11 another doping zone 21 for a buried doping zone is shown, as is customary for the production of bipolar circuits.
  • n-doped epitaxial layer 11 Application of an n-doped epitaxial layer 11 in order to arrive at a sensor element.
  • Deep contacts 35 and 36 which are also n-doped, are introduced into the epitaxial layer 11.
  • the depth contact 35 is arranged in such a way that the upper n-doping 31 is electrically contacted, the deep contact 36 in such a way that the lower n-doping 32 is electrically contacted.
  • p-doped insulation rings 37 are produced around the deep contact 36 and around the upper n-doping 31.
  • a passivation layer 15 is then again applied to the upper side, into which contact openings 14 are introduced.
  • the contact openings 14 are provided in such a way that contact is made with the deep contacts 35 by means of superficial metal films, not shown, so that a superficial electrical connection to circuit elements 20 likewise formed in the semiconductor substrate 1 and the epitaxial layer 11 can be established.
  • the semiconductor circuit elements 20 are in turn through the buried doping zone 21 and others
  • the device as shown in FIG. 12 represents a capacitive pressure sensor. If there is a pressure difference between the cavity 3 and an environment, the epitaxial layer 11 and the region of the semiconductor substrate 1 arranged above the cavity 3 are deformed. This changes the Distance between the upper doping zone 31 and the lower doping zone 32. Because these two zones are electrical insulated from one another, they form a plate capacitor, the capacitance of which depends on the distance between the doping zones 31 and 32. This capacitance can be detected by means of a corresponding evaluation circuit by means of the deep contacts 35 and 36. By measuring the capacitance, it can be concluded how much the deformation of the epitaxial layer 11 or the semiconductor substrate 1 is, and it can thus be determined how the ratio of the ambient pressure relative to the pressure in the cavity 3 is.
  • the capacitive measuring principle is particularly advantageous because it is particularly temperature-independent. Furthermore, the capacities can be evaluated particularly well by circuits arranged in the immediate vicinity.
  • FIG. 1 A further exemplary embodiment for a sensor according to the invention is shown in FIG.
  • a substrate 1 As shown in FIGS. 6 and 8, an epitaxial layer 11 is applied.
  • a region above the membrane 3 is provided with a strong doping 50, so that the epitaxial layer 11 is highly conductive in this region.
  • strong surface dopants 52 are introduced, which serve as electrical leads to contact holes 14 in a passivation layer 15. Then there is a
  • Trenches 51 are introduced by an etching process which extends from the top of the epitaxial layer 11 into the cavity 3. Beam structures 55 are created in this way, which can be designed geometrically such that they can be accelerated parallel to, for example
  • FIG. 14 shows a further example of a sensor which starts from a substrate according to FIGS. 6 and 8.
  • a movable element has been structured from an upper silicon layer, which is either formed only from the membrane layer 4, as shown in FIG. 6, or from a corresponding epitaxial layer 11, in which trenches 51 are introduced, which extend to cavity 3.
  • the boundaries of the cavity 3 are represented by the dashed line 62 in the top view of the silicon substrate 1 in FIG. 14.
  • a trench 51 has formed a seismic mass 71 from the upper silicon layer, which is suspended from four beam elements 72.
  • Piezoresistive elements 73 are arranged on each of the bar elements 72. These piezoresistive elements 73 can be used to detect an action of a force, in particular an acceleration force, which acts on the seismic mass 71.
  • the suspension arms 72 When a force acts on the mass 71, the suspension arms 72 are deformed and corresponding changes in resistance can be detected in the piezoresistive elements 73. Both forces that are perpendicular to the substrate 1 and forces that are parallel to the surface of the substrate can be detected here.
  • An advantage of the sensors as shown in FIGS. 9 to 14 is that the sensor structures all consist of single-crystal silicon. Piezoresistive resistance elements can thus be introduced with high precision and long-term durability. Furthermore, movable elements made of single-crystal silicon are of particularly high quality and show only slight signs of aging. Furthermore, the method according to the invention can be fully integrated with conventional semiconductor manufacturing processes, so that both bipolar circuits and CMOS circuits can be integrated on the same substrate. In this way, sensor elements and semiconductor circuit elements can be integrated together on one substrate. Furthermore, only conventional semiconductor manufacturing processes are used.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de production de détecteurs micromécaniques, et les détecteurs ainsi obtenus, dans lesquels des ouvertures (2) sont ménagées dans un substrat semi-conducteur. Après avoir mis en place les ouvertures (2) dans le substrat semi-conducteur (1), on procède à un traitement thermique ultérieur au cours duquel les ouvertures (2) sont transformées en espaces creux dans la profondeur du substrat (1).
EP02729780A 2001-03-22 2002-03-13 Procede de production de detecteurs micromecaniques, et detecteurs ainsi obtenus Ceased EP1373129A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10114036A DE10114036A1 (de) 2001-03-22 2001-03-22 Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren
DE10114036 2001-03-22
PCT/DE2002/000883 WO2002076880A2 (fr) 2001-03-22 2002-03-13 Procede de production de detecteurs micromecaniques, et detecteurs ainsi obtenus

Publications (1)

Publication Number Publication Date
EP1373129A2 true EP1373129A2 (fr) 2004-01-02

Family

ID=7678560

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02729780A Ceased EP1373129A2 (fr) 2001-03-22 2002-03-13 Procede de production de detecteurs micromecaniques, et detecteurs ainsi obtenus

Country Status (5)

Country Link
US (1) US7045382B2 (fr)
EP (1) EP1373129A2 (fr)
JP (1) JP2004531882A (fr)
DE (1) DE10114036A1 (fr)
WO (1) WO2002076880A2 (fr)

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Also Published As

Publication number Publication date
WO2002076880A2 (fr) 2002-10-03
US7045382B2 (en) 2006-05-16
JP2004531882A (ja) 2004-10-14
US20040152228A1 (en) 2004-08-05
WO2002076880A3 (fr) 2003-10-02
DE10114036A1 (de) 2002-10-02

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