EP1359118B1 - Systeme actionneur microélectromécanique - Google Patents

Systeme actionneur microélectromécanique Download PDF

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Publication number
EP1359118B1
EP1359118B1 EP03252493A EP03252493A EP1359118B1 EP 1359118 B1 EP1359118 B1 EP 1359118B1 EP 03252493 A EP03252493 A EP 03252493A EP 03252493 A EP03252493 A EP 03252493A EP 1359118 B1 EP1359118 B1 EP 1359118B1
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EP
European Patent Office
Prior art keywords
electrode
cantilever
moveable
substrate
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP03252493A
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German (de)
English (en)
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EP1359118A2 (fr
EP1359118A3 (fr
Inventor
John L. Dunec
Armin R. Volkel
Eric Peeters
Michel A. Rosa
Dirk Debruyker
Thomas Hantschel
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Xerox Corp
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Xerox Corp
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Publication date
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Publication of EP1359118A3 publication Critical patent/EP1359118A3/fr
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021Transducers for transforming electrical into mechanical energy or vice versa
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002Electrostatic motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/04Optical MEMS
    • B81B2201/042Micromirrors, not used as optical switches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/04Optical MEMS
    • B81B2201/045Optical switches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/01Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118Cantilevers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/05Type of movement
    • B81B2203/058Rotation out of a plane parallel to the substrate

Definitions

  • MicroElectroMechanical systems routinely use suspended micromechanical moveable electrode structures as electrostatically actuated mechanical members for both sensor and actuator based devices.
  • Different methods exist for creating a support structure to suspend a moveable electrode structure.
  • One method for suspending such a moveable electrode uses cantilevered members that are fixed to a substrate on one end and fixed to the movable electrode structure on the other end.
  • the cantilever is made of, or coated with a conducting material and the cantilever itself serves as the moving electrode.
  • the mechanical flexibility of the cantilever e.g. bending) and/or motion at the fixed end(s) (e.g. hinge or flexible connection) allows for the motion of the suspended electrode.
  • the sensor or actuator device is based on motion of cantilever as such without an additional movable structure at the end of the cantilever.
  • Such cantilevers are typically fixed-free or fixed-simply supported cantilevers.
  • a second method of suspending one or more moveable electrodes utilizes a plurality of cantilevers that support a moveable member which either serves as a moveable electrode or has mounted upon it moveable electrodes.
  • a fixed electrode serves as an actuator to control movement of the moveable electrode structure through the application of an electric potential difference between the fixed electrode and the moveable electrode structure.
  • the fixed electrode is typically positioned beneath the suspended moveable electrode to form a parallel plate capacitor like structure, with the fixed electrode acting as a first plate and the suspended moveable electrode acting as a second plate.
  • the electric potential applied to the electrodes generates electrostatic forces that move or deform the support mechanism supporting the moveable electrode or the moveable electrode itself.
  • Such support mechanisms may include bendable or otherwise deformable cantilevers.
  • Typical cantilever applications include micro sized relays, antennas, force sensors, pressure sensors, acceleration sensors and electrical probes. Recently, considerable attention has been focused on using cantilever arrays to develop low power, finely tunable micro-mirror arrays to redirect light in optical switching applications. Such a structure is described in US-B-6300665 .
  • US-B-6201631 describes an electro-optic device that has a mirror array attached to a base substrate having a plurality of fixed electrodes.
  • instability theoretically occurs in parallel plate capacitor structures when the movably suspended plate has traveled one third of the potential range of motion (typ. equal to the height of the air gap).
  • the cantilevers are typically "curled” - as opposed to more typical "straight" cantilevers.
  • instability usually occurs when the actuation electrode is placed underneath the cantilever and the cantilever moves approximately beyond one-third of its potential range of motion.
  • a fixed electrode formed on a substrate uses electrostatic forces to control the motion of a moveable electrode coupled to a support structure.
  • the electrodes are offset such that the fixed electrode is laterally separated from, rather than directly in, the path of the moveable electrode's range of motion.
  • Figures 1 and 2 show two examples of MEMS cantilevered actuator structures.
  • Figure 1 shows a side view of a simple fixed end - free end cantilever-electrode structure.
  • the example of the cantilever shown in Figure 1 is a flexible cantilever that flexes upward and may be formed using techniques for forming stressy metal structures as described in US-A-5613861 .
  • a flexible cantilever 104 is affixed to a substrate 108 at a fixed point 112.
  • the cantilever is composed of or coated with an electrically conducting material to form a suspended moveable electrode 114 that facilitates the generation of electrostatic forces between moveable electrode 114 and a fixed electrode actuator.
  • the cantilever is a stressed metal to create the curve structure illustrated.
  • stressy metal cantilevers may be formed from a refractory metal such as molybdenum, zirconium and/or tungsten (Mo, Zr, W).
  • Fixed electrode 116 deposited on substrate 108 controls movement of moveable electrode 114 and thereby cantilever 104.
  • Moving electrode 114 moves in an arc in a motion plane 110, which in the illustrated example, is oriented perpendicular to the substrate surface (in the illustrated embodiment, the paper in which the drawing is drawn represents motion plane 110).
  • cantilever 104 moves towards fixed electrode 116.
  • moving electrode 114 is maximally displaced along a trajectory of motion in motion plane 110 such that moving electrode 114 is in the lateral plane of substrate 108, the position of the moving electrode is shown by outline 120.
  • cantilever 104 flexes although in an alternate embodiment, a rigid cantilever may pivot around fixed point 112.
  • Cantilever 104 may be made of a variety of materials such as metal, silicon, polysilicon or other electrically conductive materials to serve as a moveable electrode.
  • the cantilever may be made of an insulating material such as polymers, ceramics and the like, and subsequently coated with a conductive material such as a metal film, the conductive material coating serving as the moveable electrode.
  • Appropriate dimensions of the cantilever are a length 118 of less than 5000 micrometers (less than 500 typical) and a width of less than 1000 micrometers (less than 100 typical) although alternate embodiments may use larger cantilevers.
  • the fixed electrode is positioned such that it is laterally adjacent to, rather than directly underneath the cantilever.
  • laterally adjacent is defined as a position adjacent to the trajectory of the moving electrode such that even when the moving electrode is maximally displaced such that the moving electrode, in this case the cantilever, is in the lateral plane of the substrate, the two electrodes are adjacent in the plane of the substrate.
  • the arc radiuses are small such that the moving in a trajectory is practically equivalent to translating the suspended electrode along a line perpendicular to the surface of the substrate supporting the fixed electrode.
  • laterally adjacent does not require or imply that the moving electrode and the fixed electrode are in contact, merely that the electrodes are close, typically separated by less than approximately 50 micrometers (e.g. 5 ⁇ m ) when the moving electrode is in the lateral plane of the substrate. It is contemplated that in a comparative example however, the system may still operate when the electrodes are not entirely laterally adjacent, thus when small amounts of overlap result, typically less than 10 percent of the electrode surface. Fringe electric fields are the dominant source of attraction between the moving electrode and the fixed electrode and stability may still be achieved.
  • the distance from the fixed electrode to the moving electrode should be kept relatively small, for example less than 10 micrometers to allow the effects of electrostatic attraction to control movement of the cantilever in a reasonable voltage range (typically less than 200 volts).
  • a reasonable voltage range typically less than 200 volts.
  • FIG. 2 A side view of a comparative example mechanism for suspending a moving electrode is shown in figure 2 .
  • the structure of Figure 2 is a slight variation on what is typically called a Lucent mirror, Lucent mirrors have traditionally been used to redirect light in optical systems.
  • a straight, torsionally flexible cantilever 204 is affixed to a substrate 208 at a fixed point 212 and affixed to a movably suspended member 216. Together, the elements represent a support structure for a moving electrode.
  • member 216 is composed of or coated with an electrically conducting material and thus also serves as the moveable electrode. The conducting material aids the generation of electrostatic forces between the moveable electrode and a fixed electrode 220 that serves as an electrode actuator.
  • Fixed Electrode 220 on substrate 208 controls movement of member 216.
  • member 216 rotates about an axis 224.
  • Axis 224 is oriented parallel with the substrate surface.
  • member 216 rotates towards the fixed electrode.
  • cantilever 204 flexes torsionally although in alternate examples the tortional flexing may be replaced by a rigid cantilever that pivots around fixed point 228.
  • Flexing cantilever 204 may be made of a variety of flexible materials such as metal, silicon, polysilicon. Appropriate dimensions of the cantilever are a length 232 of less than 5000 micrometers (less than 500 typical) and a width of less than 1000 micrometers (less than 100 typical) although alternate examples may use larger cantilevers.
  • the fixed electrode is positioned such that it is laterally adjacent to, rather than directly underneath the moving electrode, in the illustrated example, suspended member 216 is formed from a conducting material and serves as the moving electrode.
  • the distance to the fixed electrode should be kept relatively small, for example less than 10-100 micrometers to allow the effects of electrostatic attraction to control movement of the cantilever in a reasonable voltage range (typically less than 200 volts).
  • a reasonable voltage range typically less than 200 volts.
  • voltage differences may be simultaneously applied between suspended member 216 and multiple fixed electrodes such as fixed electrode 220, thereby causing suspended member 105' to translate downward, towards the plane of the fixed electrodes.
  • rotational motion may be avoided.
  • instability occurs at one third of the potential travel range when fixed electrodes 220 are placed directly underneath suspended the moving electrode represented by suspended member 216..
  • Laterally offsetting the electrodes as shown in figure 2 substantially extends the stable range of motion beyond one third of the potential range, approaching the full potential travel range.
  • Figure 3 illustrates one method of fabricating the cantilever electrode structure using a three step semiconductor masking process.
  • an electrode material is deposited on a substrate such as glass or quartz.
  • the electrode material may be made from a number of conducting materials or metals such as chromium.
  • a pattern masking and wet etch is done in operation 308 to define the electrode and tracks or wires that couple the electrode to controlling circuitry.
  • the controlling circuitry controls the charge and discharge of the electrode thereby controlling the motion of the cantilever.
  • the thickness of the electrode may be tuned to obtain a sheet resistance suitable for resistive sensing. Chromium has a resistivity of about 130x10 9 Ohms/M, thus a thin film of 25nm results in about 5 ohms/square.
  • a release layer such as an amorphous silicon release layer is deposited.
  • the release layer thickness determines the spacing between the cantilever and the substrate surface.
  • the release layer is often slightly thicker than the electrode layer.
  • the release layer serves as a buffer layer to prevent the entire subsequent cantilever layer from adhering to the substrate.
  • a cantilever layer such as a Molybdenum chromium (MoCr) layer is deposited in a blanket coat over the release layer in operation 316.
  • a typical cantilever thickness is approximately 1 micrometer.
  • a second mask layer is used to define the cantilever shape by etching away the excess MoCr.
  • the release layer is etched to release the cantilever leaving only one end of the cantilever affixed directly to the substrate.
  • a typical method for etching a silicon release layer utilizes a dry etch of XeF 2 as the etchant.
  • a wet etch e.g hydrofluoric acid
  • Figures 4, 5 , 6 and 7 are top views of the fixed electrode and a moving electrode cantilever structure that show alternate positions of the electrodes with respect to the cantilever.
  • Figure 4 is a comparative example which shows a top view of a traditional cantilever over electrode structure.
  • the cantilever is fixed to an underlying substrate, either directly or through an intermediate layer.
  • the flexing region 408 of the cantilever rests directly over an electrode underneath which controls movement of the cantilever.
  • the close proximity and direct application of force by electrodes positioned underneath the cantilever minimizes the operational voltage needed to move the cantilever.
  • the reduced power requirements come at the expense of great instability. Voltages greater than a critical voltage results in the cantilever "snapping" down towards the substrate.
  • Figure 5 shows one embodiment of the invention that utilizes rectangular strip electrodes 504 oriented with a length that runs parallel to the length of cantilever 508. Because electrodes 504 are not positioned directly underneath the cantilever, the laterally displaced rectangular strip electrodes depend on fringe electric fields to pull the cantilever downward. As the cantilever moves downward towards the substrate, the force vector of the electric field between the cantilever and the electrode increasingly points in a lateral direction (in the plane of the substrate) rather than in a downward direction towards the substrate. Thus, although the intensity or absolute value of the electric field increases as the cantilever moves toward the substrate, a greater percentage of the force is applied in a lateral direction reducing the rapid increase in electric field strength downward. A symmetrical arrangement of electrodes around the cantilever causes the lateral force components to cancel thereby minimizing displacement of the cantilever in a lateral direction.
  • triangular electrodes 604, 608 may be substituted for the rectangular electrodes as shown in Figure 6 .
  • the distance between the cantilever and the fixed electrodes increases along the length of the cantilever.
  • the increasing distance between the cantilever and the fixed electrode further reduces the force for a given voltage along the length of the cantilever further increasing the stable range of motion.
  • the embodiment of Figure 6 requires the highest voltages compared to the structures shown in Figure 5 and Figure 6 to achieve an equivalent displacement of the cantilever, although the actual voltage required depends on many factors including cantilever and electrode geometries, dimensions of the cantilever, material properties, etc.
  • a typical voltage to achieve a large displacement of cantilever 612 may be approximately 150 volts. Because the triangular electrodes also provide a fairly constant balance between applied force on the cantilever and cantilever flexibility across the length of the cantilever, the configuration illustrated in Figure 6 provides the most stable configuration.
  • the triangular electrodes shown in Figure 6 results in a spacing between the cantilever and the edge of the electrode remaining fairly linear with respect to voltage applied to the electrodes.
  • stability of the system is increased when the moving and/or fixed electrode is shaped such that the distance between the closest point on the fixed electrode and the closest point on the moving electrode increases with distance from the point at which the support structure supporting the moving electrode is coupled to the substrate.
  • Various ways of accomplishing the gradually increasing distance include forming triangular fixed electrodes, forming triangular moving electrodes, or angularly orienting rectangular fixed and moving electrodes such that the space between the edges of the electrodes form a triangle.
  • Other embodiments of the invention may also use electrodes with other tapered geometries (e.g. curved as opposed to straight). These different configurations may be used to linearize or otherwise tailor the displacement versus voltage curve.
  • Figure 7 shows an embodiment of the invention in which a tapered (or straight) fixed electrode 704 is formed underneath a cutout area 708 of cantilever 712.
  • This and other types of "cutout" cantilevers with “internally adjacent” electrodes are based on the same concept as other laterally offset actuation electrodes, but may offer additional advantages.
  • the embodiment shown in Figure 7 offers the advantages of adjacent electrodes while utilizing a minimum of area.
  • Figure 8 is a graph that shows the vertical height of a cantilever tip in micro-meters as a function of a direct current (D.C.) voltage applied to the electrode for different electrode geometries and positions based on a simple numerical model.
  • Each line 804, 808 and 812 can be divided into two regions: (1) an actuation region in which an air gap exists between the cantilever and the substrate resulting in a nonzero cantilever tip height and (2) a critical voltage at which the cantilever "snaps" down to the substrate eliminating the gap between cantilever and substrate.
  • Line 804 shows the cantilever tip position as a function of electrode voltage for a traditional positioning of an electrode under the cantilever.
  • the cantilever can only be controlled at a height displacement above approximately 110 micrometers. At approximately 20 volts, snap-down occurs after which manipulation of the cantilever over small displacements cannot be well controlled.
  • the electrode is placed under the cantilever, typically, the entire cantilever snaps down.
  • Line 808 shows a modeling of the cantilever height as a function of voltage for two rectangular parallel electrodes positioned adjacent to the cantilever as shown in the top view of Figure 4 . From line 808, it can be observed that the displacement of the cantilever can be well controlled for cantilever heights above 100 micro-meters. The cantilever snaps down at a critical voltage of approximately 55 volts.
  • Line 812 plots cantilever height as a function of voltage for two electrodes positioned laterally adjacent to the cantilever, the two electrodes shaped such that the electrode edges closest to the cantilever increases in distance from the cantilever edge as one moves along the length of the cantilever.
  • Such a structure may be achieved by using triangular electrodes as was shown in Figure 6 , or by orienting straight lines electrodes such that they point slightly away from the cantilever edges. Comparing line 812 to lines 804 and 808, it can be seen that the actuation region for the laterally adjacent triangular electrodes is substantially larger than the actuation region for the electrode positioned underneath the cantilever and the rectangular electrodes positioned laterally adjacent to the cantilever.
  • the cantilever has a large actuation region allowing for control of the cantilever over a wide range of voltages and tip heights.
  • Figure 9 shows a simple cantilever used in a simplified optical switching system.
  • an optical fiber 904 in an array of optical fiber acts as a light source that outputs a ray of light 908.
  • the ray 908 is focused by a lens 912 and directed to a mirror 916.
  • the position of mirror 916 is controlled by electrode 920 positioned laterally adjacent to cantilever 924.
  • the orientation of mirror 916 determines which lens in receiving lens array 928 receives light.
  • the receiving lens focuses the received light on a corresponding fiber in receiving fiber array 932.
  • mirror 916 positioned at the end of cantilever 924 offers movement in only one plane along an arc that represents the motion of a single cantilever. However, in array switching operations, it may be desirable to redirect light to various points in a two dimensional array.
  • FIG 10 shows a mirror region 1004 affixed to the end of a plurality of cantilevers 1008, 1012, 1016, 1020.
  • Each cantilever, such as cantilever 1008, includes a fixed end, such as fixed end 1024 affixed to an underlying substrate.
  • Fixed electrodes, such as electrodes 1028 and electrode 1032 typically are formed on the underlying substrate and run along the perimeter of a corresponding cantilever.
  • Each electrode, such as electrode 1028 can be considered laterally adjacent to the corresponding cantilever and may be used to deflect the corresponding cantilever.
  • An end of cantilever 1008 opposite fixed end 1024 is coupled to mirror region 1004, thus as the cantilever moves up or down, the edge of the mirror coupled to the cantilever also moves up or down accordingly.
  • the portion of the electrode near the fixed end such as fixed end 1024 serves mainly to couple the different sections of. the electrode and keep the entire electrode at a fixed potential.
  • cantilevers and mirrors are also available. Control of the various mirror and cantilever configurations can be improved by placement of electrodes adjacent to the cantilevers.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Claims (10)

  1. Système micro-électromécanique comprenant :
    un substrat (108) ayant une surface de substrat dans un plan latéral ;
    une électrode mobile (114) montée sur le substrat, l'électrode mobile étant capable de se déplacer dans un plan en mouvement (110) ; et
    une électrode fixe (116) pour commander un mouvement de l'électrode mobile par l'application d'un potentiel électrique entre les électrodes fixe et mobile ;
    où l'électrode fixe est positionnée latéralement en étant séparée de l'électrode mobile par rapport au plan latéral, et
    caractérisé en ce que
    lorsque l'électrode mobile est déplacée au maximum de sa position de repos, elle s'étend dans le plan latéral du substrat.
  2. Système MEMS de la revendication 1, dans lequel l'électrode mobile (114) est suspendue par au moins un porte-à-faux (104).
  3. Système MEMS selon la revendication 2, dans lequel l'électrode mobile (114) est l'au moins un porte-à-faux (104).
  4. Système MEMS selon la revendication 2 ou 3, dans lequel le porte-à-faux (104) est fixé au niveau d'une première extrémité, le porte-à-faux pouvant se mettre en rotation autour de ladite première extrémité.
  5. Système MEMS selon l'une des revendications 2 à 4, dans lequel le mouvement de l'électrode mobile (114) dans ledit plan en mouvement (110) implique la flexion du porte-à-faux flexible (104).
  6. Système MEMS selon l'une des revendications précédentes, dans lequel le plan en mouvement (110) est orienté de manière approximativement perpendiculaire à la surface du substrat (108).
  7. Système MEMS selon l'une des revendications précédentes, dans lequel une surface d'électrode de ladite électrode fixe (116) est positionnée à l'extérieur d'une surface couverte par ladite électrode mobile (114) lorsque ladite électrode mobile est translatée vers la surface du substrat (108).
  8. Système MEMS selon l'une des revendications précédentes, dans lequel, lorsque l'électrode mobile (114) se déplace de sorte que l'électrode mobile soit dans le plan latéral de la surface du substrat (108), l'électrode mobile et l'électrode fixe (116) sont séparées par au moins un micromètre.
  9. Procédé destiné à déplacer l'électrode mobile (114) d'un système MEMS selon l'une quelconque des revendications précédentes en utilisant des forces électrostatiques, comprenant le fait :
    d'appliquer une tension de sorte qu'une différence de tension soit formée entre l'électrode mobile et l'électrode fixe (116) positionnée latéralement en étant séparée de l'électrode mobile, la tension appliquée amenant l'électrode mobile à se déplacer vers une position sur un substrat (108) en-dessous de la position de repos de l'électrode mobile, la position étant latéralement séparée de ladite électrode fixe.
  10. Procédé destiné à déplacer l'électrode mobile (114) selon la revendication 9, dans lequel chaque champ électrique qui déplace de manière électrostatique l'électrode mobile est un champ électrique de frange provenant de l'électrode fixe (116).
EP03252493A 2002-04-30 2003-04-17 Systeme actionneur microélectromécanique Expired - Lifetime EP1359118B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/136,683 US6891240B2 (en) 2002-04-30 2002-04-30 Electrode design and positioning for controlled movement of a moveable electrode and associated support structure
US136683 2002-04-30

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EP1359118A2 EP1359118A2 (fr) 2003-11-05
EP1359118A3 EP1359118A3 (fr) 2004-09-29
EP1359118B1 true EP1359118B1 (fr) 2010-09-15

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DE (1) DE60334175D1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7006720B2 (en) * 2002-04-30 2006-02-28 Xerox Corporation Optical switching system
US6891240B2 (en) 2002-04-30 2005-05-10 Xerox Corporation Electrode design and positioning for controlled movement of a moveable electrode and associated support structure
FR2840102B1 (fr) * 2002-05-23 2004-07-16 Commissariat Energie Atomique Dispositif d'actionnement electrostatique miniature et installation comprenant de tels dispositifs
US7119943B2 (en) * 2004-08-19 2006-10-10 Teravicta Technologies, Inc. Plate-based microelectromechanical switch having a three-fold relative arrangement of contact structures and support arms
US7342596B2 (en) * 2004-12-14 2008-03-11 Palo Alto Research Center Incorporated Method for direct xerography
US7325903B2 (en) * 2004-12-14 2008-02-05 Palo Alto Research Center Incorporated Quill-jet printer
US7325987B2 (en) * 2004-12-14 2008-02-05 Palo Alto Research Center Incorporated Printing method using quill-jet
US7286149B2 (en) * 2004-12-14 2007-10-23 Palo Alto Research Center Incorporated Direct xerography system
US20070145523A1 (en) * 2005-12-28 2007-06-28 Palo Alto Research Center Incorporated Integrateable capacitors and microcoils and methods of making thereof
US7517769B2 (en) * 2005-12-28 2009-04-14 Palo Alto Research Center Incorporated Integrateable capacitors and microcoils and methods of making thereof
US7525205B2 (en) * 2006-07-28 2009-04-28 Sanyo Electric Co., Ltd. Electric power generator
GB2446887A (en) * 2007-05-04 2008-08-27 Zhou Rong A 1
TW200929196A (en) * 2007-12-28 2009-07-01 Univ Nat Chiao Tung Micro-optical pickup
CN101510486B (zh) * 2009-03-24 2011-01-05 中北大学 微致动开关
CN102201412B (zh) * 2010-03-25 2013-04-03 上海丽恒光微电子科技有限公司 单栅非易失性快闪存储单元、存储器件及其制造方法
KR20120088467A (ko) 2011-01-31 2012-08-08 삼성전자주식회사 2차원 영상 표시 영역 내에 부분 3차원 영상을 디스플레이 하는 방법 및 장치
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
JP6537707B2 (ja) 2016-03-29 2019-07-03 富士フイルム株式会社 フォーカシング機構および撮像モジュール
CN112334867A (zh) * 2018-05-24 2021-02-05 纽约州立大学研究基金会 电容传感器
WO2023146962A2 (fr) * 2022-01-26 2023-08-03 Cornell University Cil vibratile artificiel et réseaux associés

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959515A (en) 1984-05-01 1990-09-25 The Foxboro Company Micromechanical electric shunt and encoding devices made therefrom
CA2072199C (fr) * 1991-06-24 1997-11-11 Fumihiro Kasano Relais electrostatique
US5258591A (en) 1991-10-18 1993-11-02 Westinghouse Electric Corp. Low inductance cantilever switch
US5491604A (en) * 1992-12-11 1996-02-13 The Regents Of The University Of California Q-controlled microresonators and tunable electronic filters using such resonators
JP3402642B2 (ja) * 1993-01-26 2003-05-06 松下電工株式会社 静電駆動型リレー
US5367136A (en) * 1993-07-26 1994-11-22 Westinghouse Electric Corp. Non-contact two position microeletronic cantilever switch
US5658698A (en) * 1994-01-31 1997-08-19 Canon Kabushiki Kaisha Microstructure, process for manufacturing thereof and devices incorporating the same
JP3627761B2 (ja) * 1994-03-09 2005-03-09 株式会社デンソー 半導体力学量センサの製造方法
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US5898515A (en) 1996-11-21 1999-04-27 Eastman Kodak Company Light reflecting micromachined cantilever
US6384952B1 (en) * 1997-03-27 2002-05-07 Mems Optical Inc. Vertical comb drive actuated deformable mirror device and method
JPH10334778A (ja) 1997-05-30 1998-12-18 Hyundai Motor Co Ltd 臨界マイクロスイッチ及びその製造方法
US6154302A (en) 1997-11-15 2000-11-28 Canon Kabushiki Kaisha Light deflection device and array thereof
US5944537A (en) 1997-12-15 1999-08-31 Xerox Corporation Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices
US5979892A (en) 1998-05-15 1999-11-09 Xerox Corporation Controlled cilia for object manipulation
US6057520A (en) * 1999-06-30 2000-05-02 Mcnc Arc resistant high voltage micromachined electrostatic switch
GB2353410B (en) 1999-08-18 2002-04-17 Marconi Electronic Syst Ltd Electrical switches
US6366414B1 (en) 1999-09-03 2002-04-02 Agere Systems Guardian Corp. Micro-electro-mechanical optical device
US7027682B2 (en) 1999-09-23 2006-04-11 Arizona State University Optical MEMS switching array with embedded beam-confining channels and method of operating same
US6496612B1 (en) * 1999-09-23 2002-12-17 Arizona State University Electronically latching micro-magnetic switches and method of operating same
US6201631B1 (en) 1999-10-08 2001-03-13 Lucent Technologies Inc. Process for fabricating an optical mirror array
US6352454B1 (en) 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
US6373682B1 (en) * 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
US6213789B1 (en) 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US6583921B2 (en) * 1999-12-28 2003-06-24 Texas Instruments Incorporated Micromechanical device and method for non-contacting edge-coupled operation
US6384353B1 (en) * 2000-02-01 2002-05-07 Motorola, Inc. Micro-electromechanical system device
US6594058B2 (en) 2000-03-03 2003-07-15 Axsun Technologies, Inc. Rolling shutter optical switch device with mirror on shutter and open aperture optical port
US6373007B1 (en) 2000-04-19 2002-04-16 The United States Of America As Represented By The Secretary Of The Air Force Series and shunt mems RF switch
US6318871B1 (en) 2000-06-09 2001-11-20 C Speed Corporation Optical mirror system with multi-axis rotational control
US6290510B1 (en) 2000-07-27 2001-09-18 Xerox Corporation Spring structure with self-aligned release material
US6300665B1 (en) 2000-09-28 2001-10-09 Xerox Corporation Structure for an optical switch on a silicon on insulator substrate
US6647171B1 (en) 2000-12-01 2003-11-11 Corning Incorporated MEMS optical switch actuator
JP4602542B2 (ja) 2000-12-18 2010-12-22 オリンパス株式会社 光偏向器用のミラー揺動体
WO2002079814A2 (fr) 2000-12-19 2002-10-10 Coventor Incorporated Procede de fabrication d'un dispositif a revetement antireflet de systemes microelectromecaniques optiques (mems) traversant la plaquette
TW472402B (en) 2001-01-02 2002-01-11 Hung-Yi Lin Micro-mechanical driving device and its manufacturing method
US6600851B2 (en) 2001-01-05 2003-07-29 Agere Systems Inc. Electrostatically actuated micro-electro-mechanical system (MEMS) device
US6768403B2 (en) * 2002-03-12 2004-07-27 Hrl Laboratories, Llc Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring
JP3557525B2 (ja) 2001-03-29 2004-08-25 日本航空電子工業株式会社 微小可動デバイス
US7136547B2 (en) 2001-03-30 2006-11-14 Gsi Group Corporation Method and apparatus for beam deflection
SE0101182D0 (sv) 2001-04-02 2001-04-02 Ericsson Telefon Ab L M Micro electromechanical switches
SE0101183D0 (sv) * 2001-04-02 2001-04-02 Ericsson Telefon Ab L M Micro electromechanical switches
US6704475B2 (en) 2001-04-03 2004-03-09 Agere Systems Inc. Mirror for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor
US6671078B2 (en) * 2001-05-23 2003-12-30 Axsun Technologies, Inc. Electrostatic zipper actuator optical beam switching system and method of operation
US6600591B2 (en) 2001-06-12 2003-07-29 Network Photonics, Inc. Micromirror array having adjustable mirror angles
US6701037B2 (en) 2001-07-03 2004-03-02 Pts Corporation MEMS-based noncontacting free-space optical switch
JP2003015064A (ja) 2001-07-04 2003-01-15 Fujitsu Ltd マイクロミラー素子
US6856068B2 (en) * 2002-02-28 2005-02-15 Pts Corporation Systems and methods for overcoming stiction
US6813054B2 (en) 2002-03-21 2004-11-02 Agere Systems Inc. Micro-electro-mechanical device having improved torsional members and a method of manufacturing therefor
US6891240B2 (en) 2002-04-30 2005-05-10 Xerox Corporation Electrode design and positioning for controlled movement of a moveable electrode and associated support structure

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US7354787B2 (en) 2008-04-08
EP1359118A2 (fr) 2003-11-05
EP1359118A3 (fr) 2004-09-29
US6891240B2 (en) 2005-05-10
US20050167769A1 (en) 2005-08-04
DE60334175D1 (de) 2010-10-28
JP2004001209A (ja) 2004-01-08

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