EP1292965A1 - Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique - Google Patents
Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optiqueInfo
- Publication number
- EP1292965A1 EP1292965A1 EP01919529A EP01919529A EP1292965A1 EP 1292965 A1 EP1292965 A1 EP 1292965A1 EP 01919529 A EP01919529 A EP 01919529A EP 01919529 A EP01919529 A EP 01919529A EP 1292965 A1 EP1292965 A1 EP 1292965A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- column according
- focusing
- electrode
- optical
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 40
- 239000002245 particle Substances 0.000 title claims abstract description 33
- 238000010884 ion-beam technique Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000004458 analytical method Methods 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 238000001886 ion microscopy Methods 0.000 claims description 2
- 238000010330 laser marking Methods 0.000 claims description 2
- 238000004452 microanalysis Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 8
- 230000004075 alteration Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
- H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/082—Catadioptric systems using three curved mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/121—Lenses electrostatic characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/248—Components associated with the control of the tube
- H01J2237/2482—Optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Definitions
- the present invention relates to an optical column capable of focusing both an ion beam and a photon beam on the same area.
- the invention finds a particularly advantageous application in the field of analysis and repair and manufacturing of integrated circuits.
- the focused ion beams such as ion beams or electron, are now widely used to carry various types of analysis and manufacturing operations on integrated circuits, including characterization, identification, analysis design and failures, depassivation. vapor deposition under vacuum, micro-machining, etc. These operations are carried out by means of a column producing a particle beam intended to be focused on the integrated circuit at the place provided for carrying out the desired intervention .
- Such a column comprises, for example, an ion source, such as the Ga + ions produced from liquid metal, which after extraction form an ion beam, which is then treated by a focusing device comprising a number of carried electrodes at potentials determined so as to form a system of electrostatic lenses capable of focusing the ion beam on the integrated circuit.
- a focusing device comprising a number of carried electrodes at potentials determined so as to form a system of electrostatic lenses capable of focusing the ion beam on the integrated circuit.
- Each electrode of the focusing device in particular the output electrode, is constituted by a series of metal electrodes having a hole for the passage of the particle beam. It is important to note here that the shape of the different electrodes, as well as the diameter of the holes plays a decisive role in the aberrations, in particular spherical and chromatic, of the particle focusing device.
- Some columns for producing ion beams also comprises an optical focusing device, a mirror objective Cassegrain-Schwartzfield (C S), for example, terminated by an outlet opening positioned proximate to the surface of a sample subjected to the ion beam.
- C S Cassegrain-Schwartzfield
- French patent No. 2,437,695 discloses an ionic emission lens associated with a CS type mirror objective.
- the ion lens part the elements of which consist of two pierced electrodes and of the sample itself, is located between said object and the mirror lens.
- the holes of the electrodes of the ion focusing device must, at the same time, be large enough to offer the optical beam a geometric extent allowing sufficient illumination of the sample, and relatively small so as not to degrade the quality of the ion beam by high aberrations.
- the diameter finally chosen for the exit hole is therefore a compromise which is neither satisfactory for the extent of the optical beam nor for the focusing of the ion beam.
- a technical problem to be solved by the object of the present invention is to propose a column for producing a focused particle beam, comprising:
- a particle focusing device comprising an output electrode having an outlet hole for the passage of the particle beam
- the solution to the technical problem posed consists, according to the present invention, in that said outlet opening is transparent to the light beam, while said outlet electrode is formed by a metal insert held in said opening and pierced with a central hole forming said outlet hole.
- the column, object of the invention introduces independence between the diameter of the outlet hole of the particle focusing device and the diameter of the outlet opening of the optical focusing device. It is therefore possible to adjust the diameter of the central hole of the metal insert to an optimal value to reduce the aberrations of the output electrode, without prejudicing the digital aperture of the optical beam, which is determined by the diameter of the opening transparent to the optical beam.
- the particle focusing device comprising an intermediate electrode
- said electrode metal insert projects from the opening towards said intermediate electrode.
- the particle production column according to the invention is capable of a large number of applications. Among others:
- Figure 1 is a partial side view in section of a column for producing a particle beam, according to a first embodiment according to the invention.
- Figure 2 is a partial side view in section of a column for producing a particle beam, according to a second embodiment according to the invention.
- Figure 1 is shown partially in section of a tubing string of a particle beam to be focused on an integrated circuit 1.
- the axis of the particle beam which coincides with the axis of the column, is referenced by the letter A.
- the column of figure 1 applies to all kinds of charged particles, electrons or ions, we will take in the following the example of an ion beam.
- the part of the column illustrated in FIG. 1 essentially comprises a device 100 for focusing the ion beam on the integrated circuit 1.
- This device 100 comprises three electrodes, namely an input electrode 110 grounded, an electrode intermediate 120 brought to a non-zero potential V, positive or negative, of 20 keN for example, and an output electrode 130 also grounded. These electrodes 110, 120, 130 are contained between side walls 140 of the column, grounded.
- the intermediate electrode 120 is a complex electrode in two parts, consisting of a first intermediate electrode
- This device 200 makes it possible to focus the optical beam F on the sample 1 as well and therefore to form the enlarged image of the sample, as to collect the opti radiation ( ⁇ e emitted by said sample or by the atomized atoms, following ion bombardment
- the optical beam F is obtained by means of a light source, not shown, generally arranged laterally with respect to the column with reference parallel to the axis A by a 45 ° mirror placed on said axis and pierced with a hole for passage of the ion beam.
- the optical focusing device 200 is a Cassegrain type mirror objective comprising a first convex spherical mirror 210 located on the path of the optical beam F and a second concave spherical mirror 220 focusing on the integrated circuit 1 the beam coming from the first mirror 210.
- the latter is provided with a hole 21 1 to allow passage of the ion beam through the second intermediate electrode 122, the assembly formed by the first mirror 210 and said second intermediate electrode 122 being held in the center of the column by a metal tripod 212 providing great transparency to the optical beam.
- a metal tripod 212 providing great transparency to the optical beam.
- the optical focusing device 200 also includes an outlet opening 230 itself comprising a window 240 transparent to the photons of the optical beam F, held by its edges to the outer casing of the grounded column.
- the outlet electrode 130 is formed by a metal insert, passing through the window 240, the holding of which is ensured by the said window 240 and being drilled in the middle of a central hole 131 for the outlet of the electrode 130.
- the transparent window 240 is provided electrically conductive.
- it can be a glass plate covered with at least one conductive layer 241, such as indium and / or tin oxide.
- the outlet hole 131 a diameter of small value, compatible with the resolution desired for the ion beam, while retaining independently, an aperture 230 of larger diameter, providing the optical beam with a geometrical extent allowing sufficient digital aperture, and therefore obtaining a good quality optical image of the sample 1 observed.
- the outlet window 240 could just as easily be constituted by a solid material transparent to photons and any conductor of electricity.
- the metal insert 130 projects from the surface of the window 240 towards the second intermediate electrode 122, this so as to protect said window in the event of an electrical breakdown, this occurring between the insert 130 and the second electrode 122.
- the optical focusing device 200 of the embodiment of the invention presented in FIG. 2 is a mirror lens 210. 220 of the Cassegrain type brought to a high voltage, for example between 10 and 20 keN.
- a first mirror 300 is placed in the axis A of the ion beam, between the first 121 and second 122 intermediate electrodes and, more precisely, between the first intermediate electrode 121 and the mirror lens 210, 220 of the Cassegrain type.
- This mirror 300 is pierced with a hole 310 intended for the passage of the ion beam. It is oriented substantially at 45 ° relative to the axis A so as to deflect the optical beam F by approximately 90 °, laterally, in the direction of a second mirror 320 disposed in the space between the side walls 140 of the column and the room 120.
- This second mirror 300 is placed in the axis A of the ion beam, between the first 121 and second 122 intermediate electrodes and, more precisely, between the first intermediate electrode 121 and the mirror lens 210, 220 of the Cassegrain type.
- This mirror 300 is pierced with a hole 310 intended for the passage of the ion beam. It is oriented substantially at 45 ° relative to the axis
- 320 is itself oriented at 45 ° relative to the axis A. It deflects the beam F by 90 ° in the same direction as that of this axis. parallel to this one.
- the diameter of the hole 1 1 1 formed at the end of the input electrode 110. which is intended to allow the ion beam A to pass, but which does not have a function, unlike the embodiment of the Figure 1, to let the optical beam pass, can be reduced to values of the order of a millimeter.
- the deflection plates 10, located upstream of the input electrode 110 no longer have to undergo anti-reflection treatment necessary for the good conduction of the optical beam.
- the artefacts due to the interaction of the light beam with the walls of the ion optical elements, which existed upstream of the first mirror 300, in particular at the level of the deflection plates 10 of the embodiment of FIG. 1, and which in particular reduced the quality of the interpretation of the images obtained, are eliminated.
- the opening 230 does not include a window 240, but a set of metal tabs or, at the very least, electrically conductive. These legs, for example three in number, form a metal tripod 250 held by the edges of the outer casing of the grounded column which delimit the opening 230. They ensure good maintenance of the insert 130 while preserving the transparency property of the opening 230 to the optical beam.
- the outlet hole 131 it is possible to choose, for the outlet hole 131, a diameter of small value, compatible with the desired resolution for the ion beam, any retaining, independently, an opening 230 of larger diameter, providing the optical beam with a geometrical extent allowing sufficient illumination of the sample 1 observed.
- the legs of the metal tripod 212 intended to hold the assembly formed by the mirror 210 and the second intermediate electrode 122, are curved so as to increase their distance from the legs of the tripod 250 and the output electrode 130. Therefore, the risks of breakdown are limited, as well as the electric field distortions caused by the tripod.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003501 | 2000-03-20 | ||
FR0003501A FR2806527B1 (fr) | 2000-03-20 | 2000-03-20 | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
PCT/FR2001/000812 WO2001071766A1 (fr) | 2000-03-20 | 2001-03-19 | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1292965A1 true EP1292965A1 (fr) | 2003-03-19 |
Family
ID=8848259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01919529A Withdrawn EP1292965A1 (fr) | 2000-03-20 | 2001-03-19 | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
Country Status (6)
Country | Link |
---|---|
US (3) | US7045791B2 (fr) |
EP (1) | EP1292965A1 (fr) |
AU (1) | AU2001246611A1 (fr) |
FR (1) | FR2806527B1 (fr) |
TW (1) | TW591703B (fr) |
WO (1) | WO2001071766A1 (fr) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2806527B1 (fr) | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
US8202440B1 (en) * | 2002-08-27 | 2012-06-19 | Kla-Tencor Corporation | Methods and apparatus for electron beam assisted etching at low temperatures |
US7103505B2 (en) | 2002-11-12 | 2006-09-05 | Fei Company | Defect analyzer |
NL1026547C2 (nl) * | 2004-07-01 | 2006-01-03 | Fei Co | Apparaat voor het evacueren van een sample. |
US7245133B2 (en) | 2004-07-13 | 2007-07-17 | Credence Systems Corporation | Integration of photon emission microscope and focused ion beam |
US7612321B2 (en) * | 2004-10-12 | 2009-11-03 | Dcg Systems, Inc. | Optical coupling apparatus for a dual column charged particle beam tool for imaging and forming silicide in a localized manner |
US7439168B2 (en) | 2004-10-12 | 2008-10-21 | Dcg Systems, Inc | Apparatus and method of forming silicide in a localized manner |
EP1724809A1 (fr) * | 2005-05-18 | 2006-11-22 | FEI Company | Appareil optique à particules d'irradiation d' un échantillon |
GB2428868B (en) * | 2005-10-28 | 2008-11-19 | Thermo Electron Corp | Spectrometer for surface analysis and method therefor |
US7842920B2 (en) * | 2006-12-14 | 2010-11-30 | Dcg Systems, Inc. | Methods and systems of performing device failure analysis, electrical characterization and physical characterization |
EP1956633A3 (fr) | 2007-02-06 | 2009-12-16 | FEI Company | Appareil optique corpusculaire pour l'observation simultanée d'un échantillon avec des particules et des photons |
EP1956632A1 (fr) * | 2007-02-14 | 2008-08-13 | FEI Company | Appareil optique corpusculaire pour l'observation simultanée d'un échantillon avec des particules et des photons |
US7781733B2 (en) * | 2007-05-16 | 2010-08-24 | International Business Machines Corporation | In-situ high-resolution light-optical channel for optical viewing and surface processing in parallel with charged particle (FIB and SEM) techniques |
EP2105944A1 (fr) * | 2008-03-28 | 2009-09-30 | FEI Company | "Cellule environnementale" pour appareil optique à particules chargées |
EP2313230A4 (fr) * | 2008-07-09 | 2017-03-08 | FEI Company | Procédé et appareil d'usinage laser |
US7961397B2 (en) * | 2008-08-29 | 2011-06-14 | Omniprobe, Inc | Single-channel optical processing system for energetic-beam microscopes |
DE102008045336B4 (de) * | 2008-09-01 | 2022-05-25 | Carl Zeiss Microscopy Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
JP5492409B2 (ja) * | 2008-12-26 | 2014-05-14 | 株式会社堀場製作所 | 電子顕微鏡装置 |
DE102010011898A1 (de) * | 2010-03-18 | 2011-09-22 | Carl Zeiss Nts Gmbh | Inspektionssystem |
JP5756585B2 (ja) * | 2010-04-07 | 2015-07-29 | エフ・イ−・アイ・カンパニー | 組合せレーザおよび荷電粒子ビーム・システム |
JP5770434B2 (ja) * | 2010-06-24 | 2015-08-26 | 株式会社堀場製作所 | 電子顕微鏡装置 |
EP2591490B1 (fr) * | 2010-07-08 | 2016-02-03 | FEI Company | Système de traitement par faisceau de particules chargées à imagerie visuelle et infrarouge |
EP2601477B1 (fr) | 2010-08-02 | 2021-09-22 | Oxford Instruments America, Inc. | Procédé permettant d'acquérir des images simultanées et superposées à partir de faisceaux optique et de particules chargées |
EP2573796B1 (fr) | 2011-09-22 | 2014-05-07 | Carl Zeiss Microscopy Limited | Système de faisceau à particules doté d'un guide lumineux creux |
JP5825964B2 (ja) * | 2011-10-05 | 2015-12-02 | 株式会社日立ハイテクノロジーズ | 検査又は観察装置及び試料の検査又は観察方法 |
US9349564B2 (en) * | 2014-07-17 | 2016-05-24 | Fei Company | Charged-particle lens that transmits emissions from sample |
US9991091B1 (en) | 2015-07-02 | 2018-06-05 | Battelle Memorial Institute | Optical column for focused ion beam workstation |
US10546719B2 (en) | 2017-06-02 | 2020-01-28 | Fei Company | Face-on, gas-assisted etching for plan-view lamellae preparation |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1298094A (fr) * | 1960-08-18 | 1962-07-06 | Rca Corp | Dispositifs magnétiques, notamment pour la commande de signaux, et leurs procédésde fabrication |
NL268333A (fr) | 1960-08-18 | |||
US3378670A (en) * | 1964-03-23 | 1968-04-16 | Westinghouse Electric Corp | Method of craterless electron beam welding |
US3573454A (en) * | 1968-04-22 | 1971-04-06 | Applied Res Lab | Method and apparatus for ion bombardment using negative ions |
US3508045A (en) * | 1968-07-12 | 1970-04-21 | Applied Res Lab | Analysis by bombardment with chemically reactive ions |
US3740147A (en) * | 1972-01-10 | 1973-06-19 | Farrand Optical Co Inc | Microspectrophotometer with two fields of view |
DE2223367C3 (de) | 1972-05-12 | 1978-11-30 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Mikrostrahlsonde zur quantitativen Erfassung von geladenen Sekundärteilchen |
US3944826A (en) * | 1973-07-19 | 1976-03-16 | Applied Research Laboratories Limited | Methods and apparatus for analyzing mixtures |
DE2340372A1 (de) * | 1973-08-09 | 1975-02-20 | Max Planck Gesellschaft | Doppelfokussierendes massenspektrometer hoher eingangsapertur |
FR2245937A1 (en) * | 1973-10-01 | 1975-04-25 | Beauvineau Jacky | Study of luminescent materials by electron beam microscope - involves spectroscope with slit adjustable in height and width |
US3878392A (en) * | 1973-12-17 | 1975-04-15 | Etec Corp | Specimen analysis with ion and electrom beams |
US3970960A (en) | 1974-01-31 | 1976-07-20 | Bell Telephone Laboratories, Incorporated | Broadly tunable continuous-wave laser using color centers |
DE2408646A1 (de) | 1974-02-22 | 1975-08-28 | Max Planck Gesellschaft | Reaktionskinetisches messgeraet |
US4017730A (en) | 1974-05-01 | 1977-04-12 | Raytheon Company | Radiographic imaging system for high energy radiation |
US3936639A (en) | 1974-05-01 | 1976-02-03 | Raytheon Company | Radiographic imaging system for high energy radiation |
US4009391A (en) | 1974-06-25 | 1977-02-22 | Jersey Nuclear-Avco Isotopes, Inc. | Suppression of unwanted lasing in laser isotope separation |
US3961197A (en) | 1974-08-21 | 1976-06-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | X-ray generator |
US4036946A (en) | 1975-10-20 | 1977-07-19 | Marcos Kleinerman | Immunofluorometric method for measuring minute quantities of antigens, antibodies and other substances |
US4087763A (en) | 1975-11-10 | 1978-05-02 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for secondary laser pumping by electron beam excitation |
FR2376511A1 (fr) * | 1976-12-31 | 1978-07-28 | Cameca | Spectrometre de masse a balayage ultra-rapide |
FR2443085A1 (fr) | 1978-07-24 | 1980-06-27 | Thomson Csf | Dispositif de microlithographie par bombardement electronique |
DE2842527C3 (de) | 1978-09-29 | 1981-12-17 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Elektrostatische Emissionslinse |
US4330295A (en) | 1979-03-05 | 1982-05-18 | Wisconsin Alumni Research Foundation | Microwave discharge degradation of organics for analysis |
US4345331A (en) | 1980-01-14 | 1982-08-17 | Locke Technology, Inc. | Apparatus for generating an electric field |
FR2498767A1 (fr) * | 1981-01-23 | 1982-07-30 | Cameca | Micro-analyseur a sonde electronique comportant un systeme d'observation a double grandissement |
US4578279A (en) | 1981-05-26 | 1986-03-25 | International Business Machines Corporation | Inspection of multilayer ceramic circuit modules by electrical inspection of unfired green sheets |
US4443278A (en) | 1981-05-26 | 1984-04-17 | International Business Machines Corporation | Inspection of multilayer ceramic circuit modules by electrical inspection of green specimens |
FR2520553A1 (fr) * | 1982-01-22 | 1983-07-29 | Cameca | Appareil d'optique electronique comportant des elements en graphite pyrolytique |
DE3231036A1 (de) * | 1982-08-20 | 1984-02-23 | Max Planck Gesellschaft | Kombinierte elektrostatische objektiv- und emissionslinse |
JPS6020440A (ja) * | 1983-07-14 | 1985-02-01 | Tokyo Daigaku | イオンビ−ム加工装置 |
US4564758A (en) * | 1984-02-01 | 1986-01-14 | Cameca | Process and device for the ionic analysis of an insulating sample |
US4782840A (en) | 1984-03-02 | 1988-11-08 | Neoprobe Corporation | Method for locating, differentiating, and removing neoplasms |
JPH0630235B2 (ja) * | 1985-06-11 | 1994-04-20 | 浜松ホトニクス株式会社 | 高時間分解電子顕微鏡装置 |
US4714902A (en) | 1985-06-17 | 1987-12-22 | Avco Everett Research Laboratory, Inc. | Gaseous non linear dispersion laser beam control |
US4673257A (en) | 1985-06-19 | 1987-06-16 | Avco Corporation | Method of and apparatus for correction of laser beam phase front aberrations |
JPH067471B2 (ja) * | 1986-03-26 | 1994-01-26 | 株式会社日立製作所 | 質量分析装置 |
US4670685A (en) | 1986-04-14 | 1987-06-02 | Hughes Aircraft Company | Liquid metal ion source and alloy for ion emission of multiple ionic species |
FR2602051B1 (fr) * | 1986-07-23 | 1988-09-16 | Cameca | Procede et dispositif pour la decharge d'echantillons isolants lors d'une analyse ionique |
US4988879A (en) | 1987-02-24 | 1991-01-29 | The Board Of Trustees Of The Leland Stanford Junior College | Apparatus and method for laser desorption of molecules for quantitation |
GB8707516D0 (en) | 1987-03-30 | 1987-05-07 | Vg Instr Group | Surface analysis |
US4788431A (en) | 1987-04-10 | 1988-11-29 | The Perkin-Elmer Corporation | Specimen distance measuring system |
US4797892A (en) | 1987-05-11 | 1989-01-10 | Oregon Graduate Center | Longitudinally coupled surface emitting semiconductor laser array |
JPH0754684B2 (ja) * | 1987-08-28 | 1995-06-07 | 株式会社日立製作所 | 電子顕微鏡 |
FR2620532B1 (fr) * | 1987-09-11 | 1989-12-01 | Cameca | Procede d'analyse d'un echantillon par erosion au moyen d'un faisceau de particules, et dispositif pour la mise en oeuvre de ce procede |
US4755683A (en) | 1987-10-05 | 1988-07-05 | Oregon Graduate Center | Liquid-metal ion beam source substructure |
DE3803424C2 (de) * | 1988-02-05 | 1995-05-18 | Gsf Forschungszentrum Umwelt | Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben |
JP2753306B2 (ja) * | 1988-03-18 | 1998-05-20 | 株式会社日立製作所 | イオンビーム加工方法及び集束イオンビーム装置 |
US5202744A (en) | 1988-07-29 | 1993-04-13 | Louis Thomas A | Electro-optical measuring instruments |
JPH0262039A (ja) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
US4948941A (en) * | 1989-02-27 | 1990-08-14 | Motorola, Inc. | Method of laser drilling a substrate |
US5020411A (en) | 1989-03-06 | 1991-06-04 | Larry Rowan | Mobile assault logistic kinetmatic engagement device |
US5061838A (en) | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
US5063280A (en) * | 1989-07-24 | 1991-11-05 | Canon Kabushiki Kaisha | Method and apparatus for forming holes into printed circuit board |
US5063586A (en) | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
DE4000579A1 (de) * | 1990-01-10 | 1991-07-11 | Integrated Circuit Testing | Ionenstrahlgeraet sowie verfahren zur durchfuehrung von potentialmessungen mittels eines ionenstrahles |
US5206594A (en) | 1990-05-11 | 1993-04-27 | Mine Safety Appliances Company | Apparatus and process for improved photoionization and detection |
JP2578519B2 (ja) * | 1990-06-01 | 1997-02-05 | 株式会社日立製作所 | 光線による位置検出機能付き荷電粒子線露光装置 |
JPH0487148A (ja) * | 1990-07-26 | 1992-03-19 | Shimadzu Corp | 試料移動経路指定自動分析装置 |
US5342283A (en) | 1990-08-13 | 1994-08-30 | Good Roger R | Endocurietherapy |
FR2666171B1 (fr) * | 1990-08-24 | 1992-10-16 | Cameca | Spectrometre de masse stigmatique a haute transmission. |
US5128509A (en) * | 1990-09-04 | 1992-07-07 | Reliant Laser Corp. | Method and apparatus for transforming and steering laser beams |
FR2674768B1 (fr) | 1991-04-02 | 1994-09-02 | France Telecom | Procede de traitement photochimique d'un materiau utilisant une source de lumiere a tubes a eclairs. |
US5429730A (en) * | 1992-11-02 | 1995-07-04 | Kabushiki Kaisha Toshiba | Method of repairing defect of structure |
US5401973A (en) | 1992-12-04 | 1995-03-28 | Atomic Energy Of Canada Limited | Industrial material processing electron linear accelerator |
US5504340A (en) * | 1993-03-10 | 1996-04-02 | Hitachi, Ltd. | Process method and apparatus using focused ion beam generating means |
US5359621A (en) | 1993-05-11 | 1994-10-25 | General Atomics | High efficiency gas laser with axial magnetic field and tunable microwave resonant cavity |
JP2875940B2 (ja) * | 1993-08-26 | 1999-03-31 | 株式会社日立製作所 | 試料の高さ計測手段を備えた電子ビーム装置 |
US5401972A (en) * | 1993-09-02 | 1995-03-28 | Schlumberger Technologies, Inc. | Layout overlay for FIB operations |
US5394500A (en) | 1993-12-22 | 1995-02-28 | At&T Corp. | Fiber probe device having multiple diameters |
US5679952A (en) * | 1994-05-23 | 1997-10-21 | Hitachi, Ltd. | Scanning probe microscope |
WO1996000803A1 (fr) | 1994-06-28 | 1996-01-11 | Fei Company | Depot par faisceau de particules chargees de films electriquement isolants |
US5485277A (en) | 1994-07-26 | 1996-01-16 | Physical Optics Corporation | Surface plasmon resonance sensor and methods for the utilization thereof |
US5504772A (en) | 1994-09-09 | 1996-04-02 | Deacon Research | Laser with electrically-controlled grating reflector |
US5488681A (en) | 1994-09-09 | 1996-01-30 | Deacon Research | Method for controllable optical power splitting |
US5491762A (en) | 1994-09-09 | 1996-02-13 | Deacon Research | ATM switch with electrically-controlled waveguide-routing |
US5770123A (en) * | 1994-09-22 | 1998-06-23 | Ebara Corporation | Method and apparatus for energy beam machining |
US5838005A (en) * | 1995-05-11 | 1998-11-17 | The Regents Of The University Of California | Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like |
US5936237A (en) | 1995-07-05 | 1999-08-10 | Van Der Weide; Daniel Warren | Combined topography and electromagnetic field scanning probe microscope |
JPH09203864A (ja) * | 1996-01-25 | 1997-08-05 | Nikon Corp | Nfm一体型顕微鏡 |
US5905266A (en) | 1996-12-19 | 1999-05-18 | Schlumberger Technologies, Inc. | Charged particle beam system with optical microscope |
JP3689516B2 (ja) * | 1997-01-29 | 2005-08-31 | キヤノン株式会社 | 電子ビーム露光装置 |
JPH10293134A (ja) * | 1997-02-19 | 1998-11-04 | Canon Inc | 光検出または照射用のプローブ、及び該プローブを備えた近視野光学顕微鏡・記録再生装置・露光装置、並びに該プローブの製造方法 |
US5821549A (en) * | 1997-03-03 | 1998-10-13 | Schlumberger Technologies, Inc. | Through-the-substrate investigation of flip-chip IC's |
JP3484042B2 (ja) * | 1997-05-21 | 2004-01-06 | 株式会社日立製作所 | パターン検査方法およびその装置 |
US6014203A (en) * | 1998-01-27 | 2000-01-11 | Toyo Technologies, Inc. | Digital electron lithography with field emission array (FEA) |
US5945672A (en) | 1998-01-29 | 1999-08-31 | Fei Company | Gaseous backscattered electron detector for an environmental scanning electron microscope |
US6376985B2 (en) * | 1998-03-31 | 2002-04-23 | Applied Materials, Inc. | Gated photocathode for controlled single and multiple electron beam emission |
JP2000011937A (ja) | 1998-06-26 | 2000-01-14 | Advantest Corp | 電子ビーム露光装置の静電偏向器 |
EP1048071B1 (fr) | 1998-10-09 | 2008-04-23 | Fei Company | Recablage de circuits integres par gravage a faisceau ionique focalise (fib) facilite par gaz |
US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
US6373071B1 (en) * | 1999-06-30 | 2002-04-16 | Applied Materials, Inc. | Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography |
US6414307B1 (en) | 1999-07-09 | 2002-07-02 | Fei Company | Method and apparatus for enhancing yield of secondary ions |
US6373070B1 (en) | 1999-10-12 | 2002-04-16 | Fei Company | Method apparatus for a coaxial optical microscope with focused ion beam |
WO2001054163A1 (fr) | 2000-01-21 | 2001-07-26 | Koninklijke Philips Electronics N.V. | Faisceaux ioniques focalises modeles et a faible densite |
AU2001238148A1 (en) | 2000-02-09 | 2001-08-20 | Fei Company | Through-the-lens collection of secondary particles for a focused ion beam system |
US6727500B1 (en) | 2000-02-25 | 2004-04-27 | Fei Company | System for imaging a cross-section of a substrate |
FR2806527B1 (fr) | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
GB2367686B (en) | 2000-08-10 | 2002-12-11 | Leo Electron Microscopy Ltd | Improvements in or relating to particle detectors |
US6539521B1 (en) | 2000-09-29 | 2003-03-25 | Numerical Technologies, Inc. | Dissection of corners in a fabrication layout for correcting proximity effects |
JP2006114225A (ja) * | 2004-10-12 | 2006-04-27 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
US7439168B2 (en) * | 2004-10-12 | 2008-10-21 | Dcg Systems, Inc | Apparatus and method of forming silicide in a localized manner |
US7612321B2 (en) * | 2004-10-12 | 2009-11-03 | Dcg Systems, Inc. | Optical coupling apparatus for a dual column charged particle beam tool for imaging and forming silicide in a localized manner |
US7884024B2 (en) * | 2005-02-24 | 2011-02-08 | Dcg Systems, Inc. | Apparatus and method for optical interference fringe based integrated circuit processing |
US7697146B2 (en) * | 2005-02-24 | 2010-04-13 | Dcg Systems, Inc. | Apparatus and method for optical interference fringe based integrated circuit processing |
US7312448B2 (en) * | 2005-04-06 | 2007-12-25 | Carl Zeiss Nts Gmbh | Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy |
EP1956633A3 (fr) * | 2007-02-06 | 2009-12-16 | FEI Company | Appareil optique corpusculaire pour l'observation simultanée d'un échantillon avec des particules et des photons |
-
2000
- 2000-03-20 FR FR0003501A patent/FR2806527B1/fr not_active Expired - Fee Related
-
2001
- 2001-03-19 EP EP01919529A patent/EP1292965A1/fr not_active Withdrawn
- 2001-03-19 AU AU2001246611A patent/AU2001246611A1/en not_active Abandoned
- 2001-03-19 US US10/239,293 patent/US7045791B2/en not_active Expired - Fee Related
- 2001-03-19 WO PCT/FR2001/000812 patent/WO2001071766A1/fr active Application Filing
- 2001-03-20 TW TW090106480A patent/TW591703B/zh not_active IP Right Cessation
-
2005
- 2005-12-06 US US11/295,801 patent/US7297948B2/en not_active Expired - Lifetime
-
2007
- 2007-10-31 US US11/930,734 patent/US7573050B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
See references of WO0171766A1 * |
Also Published As
Publication number | Publication date |
---|---|
AU2001246611A1 (en) | 2001-10-03 |
US7045791B2 (en) | 2006-05-16 |
US20030102436A1 (en) | 2003-06-05 |
FR2806527B1 (fr) | 2002-10-25 |
US7297948B2 (en) | 2007-11-20 |
FR2806527A1 (fr) | 2001-09-21 |
TW591703B (en) | 2004-06-11 |
US20080111084A1 (en) | 2008-05-15 |
WO2001071766A1 (fr) | 2001-09-27 |
US7573050B2 (en) | 2009-08-11 |
US20060097198A1 (en) | 2006-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1292965A1 (fr) | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique | |
EP2195643B1 (fr) | Systeme d'analyse de gaz a basse pression par spectroscopie d'emission optique | |
FR2710781A1 (fr) | Dispositif formant cathode d'émission de champ. | |
FR3057794B1 (fr) | Perfectionnements a la fabrication additive selective | |
EP2198449A1 (fr) | Sonde tomographique grand angle a haute resolution | |
CA2887442C (fr) | Photocathode semi-transparente a taux d'absorption ameliore | |
EP2815418B1 (fr) | Dispositif et procédé d'émission d'électrons et système comportant un tel dispositif | |
EP2394290B1 (fr) | Spectrometre de masse magnetique achromatique a double focalisation | |
EP3005397B1 (fr) | Lentille electrostatique a membrane semiconductrice dielectrique | |
EP2396806B1 (fr) | Dispositif d'analyse de masse a large acceptance angulaire comprenant un reflectron | |
EP0086120A1 (fr) | Appareil d'optique électronique comportant des éléments en graphite pyrolytique | |
EP1490888B1 (fr) | Dispositif de mesure de l emission de rayons x produite par un objet soumis a un faisceau d electrons | |
EP0244289A2 (fr) | Dispositif à faisceau électronique pour projeter l'image d'un objet sur un échantillon | |
EP0925599B1 (fr) | Filtre d'energie, microscope electronique a transmission et procede de filtrage d'energie associe | |
EP0228735B1 (fr) | Dispositif d'insolation pour la génération de masques | |
EP0075504B1 (fr) | Dispositif de limitation angulaire dans un système à faisceau de particules chargées | |
EP0269472B1 (fr) | Tube de prise de vue muni d'un dispositif de polarisation lumineuse | |
FR2596200A1 (fr) | Tube de generation d'image | |
CA3145386A1 (fr) | Generateur pulse de particules chargees electriquement et procede d'utilisation d'un generateur pulse de particules chargees electriquement | |
EP0449740A1 (fr) | Dispositif de focalisation d'un faisceau de particules chargées | |
BE494828A (fr) | ||
BE417194A (fr) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030102 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE GB IT |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ORSAY PHYSICS Owner name: CREDENCE SYSTEMS CORPORATION |
|
17Q | First examination report despatched |
Effective date: 20070803 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ORSAY PHYSICS Owner name: DCG SYSTEMS, INC. |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20091001 |