EP1205964A4 - Plasma process device, electrode structure thereof, and stage structure - Google Patents

Plasma process device, electrode structure thereof, and stage structure

Info

Publication number
EP1205964A4
EP1205964A4 EP00937315A EP00937315A EP1205964A4 EP 1205964 A4 EP1205964 A4 EP 1205964A4 EP 00937315 A EP00937315 A EP 00937315A EP 00937315 A EP00937315 A EP 00937315A EP 1205964 A4 EP1205964 A4 EP 1205964A4
Authority
EP
European Patent Office
Prior art keywords
plasma process
process device
stage
electrode structure
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00937315A
Other languages
German (de)
French (fr)
Other versions
EP1205964A1 (en
EP1205964B1 (en
Inventor
Mitsuaki Komino
Yasuharu Sasaki
Kyo Tsuboi
Hideaki Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of EP1205964A1 publication Critical patent/EP1205964A1/en
Publication of EP1205964A4 publication Critical patent/EP1205964A4/en
Application granted granted Critical
Publication of EP1205964B1 publication Critical patent/EP1205964B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002Controlling environment of sample

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
EP00937315A 1999-06-21 2000-06-20 Plasma process device, electrode structure thereof, and stage structure Expired - Lifetime EP1205964B1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP17361399 1999-06-21
JP17361399 1999-06-21
JP2000168297A JP2001068538A (en) 1999-06-21 2000-06-05 Electrode structure, mounting base structure, plasma treatment system, and processing unit
JP2000168297 2000-06-05
PCT/JP2000/004011 WO2000079575A1 (en) 1999-06-21 2000-06-20 Plasma process device, electrode structure thereof, and stage structure

Publications (3)

Publication Number Publication Date
EP1205964A1 EP1205964A1 (en) 2002-05-15
EP1205964A4 true EP1205964A4 (en) 2005-02-02
EP1205964B1 EP1205964B1 (en) 2006-03-29

Family

ID=26495531

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00937315A Expired - Lifetime EP1205964B1 (en) 1999-06-21 2000-06-20 Plasma process device, electrode structure thereof, and stage structure

Country Status (7)

Country Link
US (1) US7033444B1 (en)
EP (1) EP1205964B1 (en)
JP (1) JP2001068538A (en)
KR (1) KR100452649B1 (en)
DE (1) DE60026996T2 (en)
TW (1) TW483087B (en)
WO (1) WO2000079575A1 (en)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE442204T1 (en) * 2000-06-16 2009-09-15 Ati Properties Inc METHOD FOR INJECTION MOLDING, SPUTTING AND HEAT EXCHANGE
US6496529B1 (en) * 2000-11-15 2002-12-17 Ati Properties, Inc. Refining and casting apparatus and method
US8891583B2 (en) * 2000-11-15 2014-11-18 Ati Properties, Inc. Refining and casting apparatus and method
JP4791637B2 (en) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 CVD apparatus and processing method using the same
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
JP4683775B2 (en) * 2001-07-10 2011-05-18 京セラ株式会社 Wafer mounting stage and semiconductor manufacturing apparatus using the same
JP4574987B2 (en) * 2002-01-10 2010-11-04 東京エレクトロン株式会社 Processing equipment
JP3832409B2 (en) 2002-09-18 2006-10-11 住友電気工業株式会社 Wafer holder and semiconductor manufacturing apparatus
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
JP4165745B2 (en) * 2003-01-27 2008-10-15 日本碍子株式会社 Semiconductor wafer holding device
WO2004070822A1 (en) 2003-02-06 2004-08-19 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing semiconductor device and display
US20040216678A1 (en) * 2003-03-03 2004-11-04 Sumitomo Electric Industries, Ltd. Wafer Holder for Semiconductor Manufacturing Equipment and Semiconductor Manufacturing Equipment in Which It Is Installed
KR100752800B1 (en) 2003-03-12 2007-08-29 동경 엘렉트론 주식회사 Substrate holding structure for semiconductor processing, and plasma processing device
US6992892B2 (en) * 2003-09-26 2006-01-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume
KR100826432B1 (en) * 2003-10-31 2008-04-29 엘지디스플레이 주식회사 Susceptor of using semiconductor process equipment and semiconductor process equipment having therof
JP4574174B2 (en) * 2004-01-14 2010-11-04 株式会社日立ハイテクノロジーズ Plasma processing apparatus and electrode
WO2005074450A2 (en) 2004-01-30 2005-08-18 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
WO2005115063A1 (en) * 2004-05-20 2005-12-01 Universidade Do Minho Continuous and semi-continuous treatment of textile materials integrating corona discharge
KR100539266B1 (en) * 2004-06-02 2005-12-27 삼성전자주식회사 Plasma processing apparatus having segment confinements
US7300707B2 (en) * 2004-10-25 2007-11-27 Creative Technology Corporation Aluminium composite structure having a channel therein and method of manufacturing the same
US20060138925A1 (en) * 2004-12-28 2006-06-29 Yi-Fang Cheng Plasma processing device having a ring-shaped air chamber for heat dissipation
KR100572118B1 (en) * 2005-01-28 2006-04-18 주식회사 에이디피엔지니어링 Plasma processing apparatus
JP2006237348A (en) * 2005-02-25 2006-09-07 Ulvac Japan Ltd Electrostatic chuck and vacuum treatment apparatus comprising the same
KR100669111B1 (en) * 2005-06-16 2007-01-15 삼성전자주식회사 Chamber assembly and apparatus for manufacturing a wafer having the same
JP4847070B2 (en) * 2005-08-26 2011-12-28 株式会社岡本工作機械製作所 Substrate grinding apparatus with two-point in-process gage equipment
US7578960B2 (en) * 2005-09-22 2009-08-25 Ati Properties, Inc. Apparatus and method for clean, rapidly solidified alloys
US7803211B2 (en) * 2005-09-22 2010-09-28 Ati Properties, Inc. Method and apparatus for producing large diameter superalloy ingots
US7803212B2 (en) * 2005-09-22 2010-09-28 Ati Properties, Inc. Apparatus and method for clean, rapidly solidified alloys
US8381047B2 (en) * 2005-11-30 2013-02-19 Microsoft Corporation Predicting degradation of a communication channel below a threshold based on data transmission errors
JP4844167B2 (en) * 2006-02-24 2011-12-28 東京エレクトロン株式会社 Cooling block and plasma processing apparatus
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5041736B2 (en) * 2006-06-09 2012-10-03 キヤノントッキ株式会社 Substrate heating apparatus and substrate heating method
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
US20080083979A1 (en) * 2006-10-10 2008-04-10 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
KR100867191B1 (en) * 2006-11-02 2008-11-06 주식회사 유진테크 substrate processing apparatus and substrate processing method
JP4944600B2 (en) * 2006-12-28 2012-06-06 新光電気工業株式会社 Substrate temperature adjustment fixing device
JP2008244224A (en) * 2007-03-28 2008-10-09 Sumitomo Precision Prod Co Ltd Plasma treatment apparatus
US8069817B2 (en) 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8642916B2 (en) * 2007-03-30 2014-02-04 Ati Properties, Inc. Melting furnace including wire-discharge ion plasma electron emitter
US8748773B2 (en) * 2007-03-30 2014-06-10 Ati Properties, Inc. Ion plasma electron emitters for a melting furnace
WO2008156031A1 (en) * 2007-06-19 2008-12-24 Tokyo Electron Limited Vacuum processing apparatus
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US7798199B2 (en) 2007-12-04 2010-09-21 Ati Properties, Inc. Casting apparatus and method
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US10192760B2 (en) * 2010-07-29 2019-01-29 Eugene Technology Co., Ltd. Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
KR100943427B1 (en) * 2008-02-04 2010-02-19 주식회사 유진테크 Substrate supporting unit and substrate processing apparatus, manufacturing method of the substrate supporting unit
JP5169298B2 (en) * 2008-02-22 2013-03-27 株式会社デンソー Semiconductor manufacturing equipment
JP5224855B2 (en) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 Electrode unit, substrate processing apparatus, and temperature control method for electrode unit
KR101006848B1 (en) * 2008-05-28 2011-01-14 주식회사 코미코 Apparatus for supporting a wafer and apparatus for processing a board including the same
US20100014208A1 (en) * 2008-07-10 2010-01-21 Canon Anleva Corporation Substrate holder
US20110068084A1 (en) * 2008-07-10 2011-03-24 Canon Anelva Corporation Substrate holder and substrate temperature control method
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP5056735B2 (en) * 2008-12-02 2012-10-24 東京エレクトロン株式会社 Deposition equipment
WO2010109647A1 (en) * 2009-03-27 2010-09-30 株式会社アドバンテスト Multicolumn electronic beam lithography mask retainer and multicolumn electronic beam lithography system
TWI458557B (en) * 2009-11-26 2014-11-01 Hon Hai Prec Ind Co Ltd Spray-paint shielding device and the method using the same
US20110180233A1 (en) * 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
US8747956B2 (en) 2011-08-11 2014-06-10 Ati Properties, Inc. Processes, systems, and apparatus for forming products from atomized metals and alloys
US8669540B2 (en) * 2011-01-03 2014-03-11 Varian Semiconductor Equipment Associates, Inc. System and method for gas leak control in a substrate holder
JP2012169552A (en) * 2011-02-16 2012-09-06 Tokyo Electron Ltd Cooling mechanism, processing chamber, component in processing chamber, and cooling method
JP2012230023A (en) * 2011-04-27 2012-11-22 Tokyo Electron Ltd Temperature measurement device and temperature calibration device and method thereof
JP2013045817A (en) * 2011-08-23 2013-03-04 Hitachi High-Technologies Corp Vacuum processing apparatus and vacuum processing method
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
WO2013077952A1 (en) 2011-11-23 2013-05-30 Applied Materials, Inc. Apparatus and methods for silicon oxide cvd photoresist planarization
KR20150013627A (en) * 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Methods and apparatus toward preventing esc bonding adhesive erosion
JP6018196B2 (en) * 2012-05-30 2016-11-02 京セラ株式会社 Channel member, heat exchanger using the same, and semiconductor manufacturing apparatus
JP6069979B2 (en) * 2012-09-08 2017-02-01 住友金属鉱山株式会社 Can roll with gas release mechanism, long substrate processing apparatus equipped with the same, and long substrate processing method using the same
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP2013153171A (en) * 2013-02-15 2013-08-08 Panasonic Corp Plasma processing apparatus and plasma processing method
JP2013110440A (en) * 2013-03-11 2013-06-06 Tokyo Electron Ltd Electrode unit and substrate processing apparatus
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP2015216255A (en) * 2014-05-12 2015-12-03 キヤノン株式会社 Etching chamber and manufacturing method of substrate
WO2017003646A1 (en) * 2015-06-29 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Thermal shield for electrostatic chuck
WO2017079588A1 (en) 2015-11-05 2017-05-11 Axcelis Technologies, Inc. Ion source liner having a lip for ion implantion systems
US10361069B2 (en) * 2016-04-04 2019-07-23 Axcelis Technologies, Inc. Ion source repeller shield comprising a labyrinth seal
JP6704836B2 (en) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 Heating device
JP6704834B2 (en) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 Heating device
JP2018125461A (en) * 2017-02-02 2018-08-09 東京エレクトロン株式会社 Workpiece processing device
JP6982394B2 (en) * 2017-02-02 2021-12-17 東京エレクトロン株式会社 Work piece processing device and mounting table
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
JP6522180B1 (en) 2018-02-08 2019-05-29 Sppテクノロジーズ株式会社 Substrate mounting table, plasma processing apparatus provided with the same, and plasma processing method
JP6871959B2 (en) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 Organic film forming apparatus and method for producing an organic film
CN108682636B (en) * 2018-05-16 2020-10-30 江苏爱矽半导体科技有限公司 Wafer etching device
WO2020073779A1 (en) * 2018-10-11 2020-04-16 北京北方华创微电子装备有限公司 Electrostatic chuck and reaction cavity
US20220262657A1 (en) * 2019-08-02 2022-08-18 Applied Materials, Inc. Pedestal with multi-zone heating
KR102505474B1 (en) 2019-08-16 2023-03-03 램 리써치 코포레이션 Spatially tunable deposition to compensate for differential bow within the wafer
KR102615216B1 (en) * 2020-05-15 2023-12-15 세메스 주식회사 Electrostatic chuck, substrate processing apparatus and substrate processing method
KR102607844B1 (en) * 2020-07-10 2023-11-30 세메스 주식회사 Apparatus for treating substrate and unit for supporting substrate
KR102589181B1 (en) * 2021-08-31 2023-10-16 피에스케이 주식회사 Substrate processing apparatus and substrate processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467390A1 (en) * 1990-07-20 1992-01-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
EP0488307A2 (en) * 1990-11-28 1992-06-03 Tokyo Electron Limited Plasma etching apparatus
US5376213A (en) * 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
US5382311A (en) * 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060060A (en) * 1983-09-12 1985-04-06 株式会社日立製作所 Switchgear for door of railway rolling stock
JPS6372877A (en) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd Vacuum treatment device
US5169407A (en) * 1987-03-31 1992-12-08 Kabushiki Kaisha Toshiba Method of determining end of cleaning of semiconductor manufacturing apparatus
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH0178026U (en) * 1987-11-13 1989-05-25
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
DE69007733T2 (en) * 1989-05-08 1994-09-29 Philips Nv DEVICE AND METHOD FOR TREATING A FLAT, DISC-SHAPED SUBSTRATE AT LOW PRESSURE.
KR0165898B1 (en) * 1990-07-02 1999-02-01 미다 가쓰시게 Vacuum processing method and apparatus
US5255153A (en) * 1990-07-20 1993-10-19 Tokyo Electron Limited Electrostatic chuck and plasma apparatus equipped therewith
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
JPH05315262A (en) * 1992-05-07 1993-11-26 Hitachi Ltd Equipment of semiconductor processing
JP3032087B2 (en) * 1992-07-28 2000-04-10 東京エレクトロン株式会社 Plasma processing equipment
JP3181421B2 (en) * 1993-01-28 2001-07-03 東京エレクトロン株式会社 Processing equipment
US5800618A (en) * 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5567267A (en) * 1992-11-20 1996-10-22 Tokyo Electron Limited Method of controlling temperature of susceptor
JP3153658B2 (en) 1992-11-20 2001-04-09 東京エレクトロン株式会社 Plasma processing method
KR100290748B1 (en) * 1993-01-29 2001-06-01 히가시 데쓰로 Plasma processing apparatus
JP2898838B2 (en) * 1993-02-23 1999-06-02 日本碍子株式会社 Heating equipment
JPH06302533A (en) * 1993-04-19 1994-10-28 Kokusai Electric Co Ltd Vertical reactive furnace
JP3126561B2 (en) 1993-09-09 2001-01-22 東京エレクトロン株式会社 Vacuum processing equipment
US5625526A (en) * 1993-06-01 1997-04-29 Tokyo Electron Limited Electrostatic chuck
TW277139B (en) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
KR100430643B1 (en) * 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 Electrostatic chuck with conformal insulator film
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5535090A (en) * 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
JPH07283292A (en) * 1994-04-08 1995-10-27 Tokyo Electron Ltd Sealing mechanism besides treatment device and treatment method using this sealing mechanism
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
JP3069271B2 (en) * 1995-07-12 2000-07-24 勇藏 森 High-efficiency processing method and device using high-density radical reaction using rotating electrode
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
JPH0997830A (en) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd Electrostatic chuck holder, wafer holding mechanism and using method thereof
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
JPH09213781A (en) * 1996-02-01 1997-08-15 Tokyo Electron Ltd Stage structure and processor using it
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467390A1 (en) * 1990-07-20 1992-01-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
EP0488307A2 (en) * 1990-11-28 1992-06-03 Tokyo Electron Limited Plasma etching apparatus
US5376213A (en) * 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
US5382311A (en) * 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0182, no. 77 (E - 1554) 26 May 1994 (1994-05-26) *
PATENT ABSTRACTS OF JAPAN vol. 0185, no. 99 (E - 1631) 15 November 1994 (1994-11-15) *
See also references of WO0079575A1 *

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TW483087B (en) 2002-04-11
DE60026996D1 (en) 2006-05-18
US7033444B1 (en) 2006-04-25
KR100452649B1 (en) 2004-10-12
WO2000079575A1 (en) 2000-12-28
DE60026996T2 (en) 2007-03-15
JP2001068538A (en) 2001-03-16
EP1205964A1 (en) 2002-05-15
EP1205964B1 (en) 2006-03-29
KR20020022072A (en) 2002-03-23

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