CN108682636B - Wafer etching device - Google Patents
Wafer etching device Download PDFInfo
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- CN108682636B CN108682636B CN201810468778.3A CN201810468778A CN108682636B CN 108682636 B CN108682636 B CN 108682636B CN 201810468778 A CN201810468778 A CN 201810468778A CN 108682636 B CN108682636 B CN 108682636B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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Abstract
The invention belongs to the technical field of semiconductor processes, in particular to a wafer etching device, which comprises a moving module, a fixed plate, a vibrating unit, a dust removal module, a clamping piece and a controller, wherein the moving module is fixedly arranged on a bottom plate of a closed bin through a fixed rod; the fixed plate is fixedly arranged on the top surface of the dust removal module through the vibration unit; the moving module is used for shifting the wafer; the fixing plate is fixedly provided with a metal sucker, and the metal sucker is used for fixing the bottom surface of the wafer; the dust removal module is used for cleaning impurities on the surface of the wafer; the clamping piece is used for limiting the dust removal module; the wafer clamping device is mainly used for etching the wafer, can improve the etching precision of the wafer, and can etch the part of the wafer, which is shielded by the clamping component; the etching efficiency of the wafer is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a wafer etching device.
Background
The conventional etching process is carried out by exposing and developing the required etching material and then carrying out plasma etching. Wherein the plasma etching step is realized by utilizing the volatilization characteristics of reaction products of etching materials such as Al, Si and the like, such as AlCl3, SiF4 and the like. When a wafer is clamped and fixed in the traditional etching process, the shielded surface of the wafer cannot be etched, and meanwhile, impurities remained after the wafer is etched are difficult to remove in time, so that the surface of the wafer is untidy, and the subsequent sputtering coating process of the wafer is influenced.
A technical solution of an etching apparatus has also appeared in the prior art, and for example, a chinese patent with application number 201410356255.1 discloses an etching apparatus and an etching method. Wherein the etching device includes: a reaction chamber; the wafer fixing device is used for fixing the wafer at the top of the reaction cavity, and the surface to be etched of the wafer faces the bottom of the reaction cavity; the gas injection port is arranged at the bottom of the reaction cavity and used for introducing etching gas into the reaction cavity; the exciting coil is arranged around the reaction cavity and used for exciting the etching gas into plasma; and a bias providing device connected with the wafer fixing device and used for applying bias to the wafer in the wafer fixing device. Although the technical scheme can etch the surface of the wafer, the etched impurities can be extracted; but the technical scheme can not etch the part blocked by the wafer clamping; meanwhile, the wafer in the technical scheme is not convenient to fix, and the etching precision of the wafer is influenced; so that the invention is limited.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides a wafer etching device which is mainly used for etching a wafer, can improve the etching precision of the wafer and can etch the part of the wafer, which is shielded by a clamping part; the wafer is fixed by matching the movable module with the fixed plate, and impurities on the surface of the wafer are extracted by matching the vibration unit with the dust removal module; the etching efficiency of the wafer is improved.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention provides a wafer etching device, which comprises a closed bin, an exciting coil and a biasing device, wherein a gas injection port is formed in a top plate of the closed bin; wherein, the closed bin, the exciting coil and the biasing device are not the innovation of the invention and are not described herein; the device comprises a closed bin, a movable module, a fixed plate, a vibration unit, a dust removal module, a clamping piece and a controller, wherein the movable module is fixedly arranged on a bottom plate of the closed bin through a fixed rod; the fixed plate is fixedly arranged on the top surface of the dust removal module through the vibration unit; the moving module is used for shifting the wafer; the fixing plate is fixedly provided with a metal sucker, and the metal sucker is used for fixing the bottom surface of the wafer; the dust removal module is used for cleaning impurities on the surface of the wafer; the clamping piece is used for limiting the dust removal module; the controller is used for controlling the work of the moving module, the vibrating unit, the dust removal module and the clamping piece;
the movable module is matched with the fixed plate to fix the wafer, and the vibration unit has two working modes, wherein the first working mode is to vibrate the fixed plate; the second working mode of the vibration unit is to fix the fixing plate;
the moving module comprises a first cylinder, a first mounting plate, a first fixing frame, a third air pressure rod, a first sliding block and a first suction device; the first cylinder is fixedly arranged on the fixed rod through a first mounting plate; the top of the inner wall of the first cylinder is provided with a first sliding rail; the first fixing frame moves in the first sliding rail through the first sliding block, and the first fixing frame is fixedly connected with the first suction device through the third air pressure rod; the number of the first suction devices is four, and the four first suction devices are matched for rotating the wafer; when the third air pressure rod is stretched, the first suction device is driven to be in close contact with the wafer, and the suction pump enables the first suction device to adsorb and fix the wafer by pumping negative pressure to the first suction device; the first suction device can move through the matching of the first sliding block and the first sliding rail; the controller controls the four first suction devices to work alternately, so that the surface of the wafer, which is shielded by the first suction devices, is exposed, and the phenomenon that part of the surface of the wafer cannot be etched due to shielding is prevented; the efficiency of wafer membrane carving is improved.
The first mounting plate is a circular mounting plate, and a second sliding rail is arranged on the inner wall of the first mounting plate; the dust removal module is provided with a second sliding block, and the second sliding block enables the dust removal module to rotate through being matched with a second sliding rail. After the clamping piece does not clamp the dust removal module, the dust removal module rotates to drive the wafer to rotate, so that dust on the surface of the wafer is more easily separated from the surface of the wafer; under the action of negative pressure of the suction pump on the closed bin, dust on the surface of the wafer is sucked out of the closed bin.
Preferably, the dust removal module comprises a second cylinder and a second turntable, a first circular groove is formed in the bottom surface of the second turntable, the upper end of the second cylinder is arranged in the first circular groove in a rolling mode through a steel ball, and the bottom end of the second cylinder is fixedly arranged on a bottom plate of the closed bin; the first circular groove is matched with the second cylinder to enable the second turntable to rotate on the second cylinder, and the second cylinder is used for sealing the bottom of the second turntable; a suction hole is formed in the bottom plate of the closed bin; the top surface of the second turntable is obliquely provided with a first hole penetrating through the second turntable; the suction hole is used for rotating the second turntable by being matched with the first hole. When the suction pump pumps negative pressure to the second cylinder, the second rotary disc rotates under the action of the first hole, thereby realizing the purpose of driving the wafer to rotate and accelerating the efficiency of separating dust from the surface of the wafer,
preferably, the first suction device comprises a third mounting plate, a sliding telescopic rod and a stretching type sucker; the third mounting plate is fixedly connected with the stretching type sucker through a sliding telescopic rod, and a spring is sleeved on the outer layer of the sliding telescopic rod; the stretching type sucker is used for fixing the wafer under negative pressure. When the stretching type sucker is contacted with the surface of the wafer, the volume of the stretching type sucker is suddenly increased, so that the air pressure in the stretching type sucker is rapidly reduced, and the adsorption capacity of the wafer is improved; simultaneously, the cover has the slip telescopic link of spring to be used for cooperating tensile formula sucking disc work, and when the volume of tensile formula sucking disc increased, the length of slip telescopic link can reduce.
Preferably, the stretching type sucker comprises a second mounting plate, a second pneumatic rod, a support, a folding pipe and a fixing ring; the second mounting plate is fixedly connected with the bracket through a second air pressure rod, and the bracket is used for fixing the fixing ring; the fixing ring is fixedly connected with the second mounting plate through a folding pipe; and a second hole is formed in the second mounting plate. When solid fixed ring and wafer surface contact, No. two air pressure levers are tensile to drive the folding pipe and stretched, increased the volume of folding pipe, make the atmospheric pressure in the folding pipe reduce fast, negative pressure pump takes out the negative pressure through the hose to No. two holes simultaneously, has further improved the absorption fixed ability of tensile formula sucking disc to the wafer.
Preferably, the vibration unit comprises four first air pressure rods, springs are sleeved on the outer layers of the four first air pressure rods, the top ends of the springs are fixedly connected with the fixing plate, and the bottom ends of the springs are fixedly connected with the dust removal module; one side of each of the four first air pressure rods is fixedly arranged on the dust removal module, and the other side of each of the four first air pressure rods is not connected with the fixing plate. Firstly, the first suction device is separated from the top surface of the wafer, and the wafer is fixed on a fixing plate; when the first air pressure rod is stretched, the fixing plate is driven to move upwards, so that the spring is stretched and tensioned, and the fixing plate cannot vibrate up and down; when the first air pressure rod contracts, the first air pressure rod is not in contact with the fixed plate, and when the dust removal module drives the fixed plate to rotate, the fixed plate can shake under the action of the spring, so that the separation efficiency of impurities on the surface of the wafer is improved.
Preferably, the clamping member comprises a four-gauge air pressure rod and a pressing plate, and the top surface of the pressing plate is provided with corrugated lines for improving the friction force of the pressing plate. When the wafer needs to be etched, when the pressure bar II stretches, the extrusion plate is in close contact with the bottom surface of the turntable II, and meanwhile, the corrugated lines arranged on the top surface of the extrusion plate improve the fixing efficiency of the extrusion plate on the turntable II, so that the turntable II does not rotate, and the wafer etching precision is improved.
The invention has the beneficial effects that:
1. the wafer etching device comprises a moving module, a fixed plate, a vibration unit, a dust removal module, a clamping piece and a controller, wherein the clamping piece is matched with the dust removal module and the vibration unit to fix the fixed plate, the fixed plate is matched with the moving module to drive a wafer to move, the part of the surface of the wafer, which is shielded by the moving module, can be etched, and the dust removal module extracts impurities on the surface of the wafer, so that the smoothness of the surface of the wafer is improved.
2. The invention relates to a wafer etching device.A moving module comprises four first suction devices, a controller controls the four-core first suction devices to shift a wafer, meanwhile, each first suction device comprises a stretching type sucker, a sliding telescopic rod and a third mounting plate, the stretching type sucker is fixedly connected with the third mounting plate through the sliding telescopic rod, a spring is sleeved on the outer layer of the sliding telescopic rod, and the stretching type sucker is used for adsorbing and fixing the wafer by changing the volume of the stretching type sucker; the sliding telescopic rod sleeved with the spring is used for matching and is used for enabling the stretching type sucker to realize self volume change.
3. The invention relates to a wafer etching device, wherein a dust removal module comprises a second cylinder and a second rotary table, a first circular groove is formed in the bottom surface of the second rotary table and used for enabling the second rotary table to rotate on the second cylinder, a first hole is obliquely formed in the second rotary table, a suction pump is used for pumping air from the first hole to enable gas to flow in the first hole, so that the second rotary table rotates, the fixed disc drives a wafer to rotate together, and a fixing plate drives the wafer to vibrate in the vertical direction under the action of a vibration unit and is used for improving the speed of impurity separation on the surface of the wafer.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a cross-sectional view of the present invention;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a cross-sectional view of suction device number one of the present invention;
in the figure: the device comprises a closed bin 1, an exciting coil 11, a biasing device 12, a gas injection port 13, a moving module 2, a wafer 6, a fixing plate 14, a vibrating unit 15, a dust removal module 3, a second slider 31, a clamping piece 16, a fixing rod 21, a metal sucker 141, a first cylinder 22, a first mounting plate 23, a first fixing frame 24, a third pneumatic rod 25, a first slider 26, a first suction device 27, a first slide rail 28, a second slide rail 29, a second cylinder 32, a second turntable 33, a first circular groove 34, a first hole 35, a suction hole 17, a third mounting plate 51, a sliding telescopic rod 52, a stretching type sucker 53, a second mounting plate 531, a second pneumatic rod 532, a support 533, a folding tube 534, a fixing ring 535, a second hole 536, a first pneumatic rod 151, a fourth pneumatic rod 161 and a squeezing plate 162.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 3, the wafer etching apparatus according to the present invention includes a closed chamber 1, an exciting coil 11 and a bias device 12, wherein a gas injection port 13 is disposed on a top plate of the closed chamber 1; wherein, the closed bin 1, the exciting coil 11 and the biasing device 12 are not the innovation of the present invention and are not described herein; the device also comprises a moving module 2, a fixing plate 14, a vibrating unit 15, a dust removal module 3, a clamping piece 16 and a controller, wherein the moving module 2 is fixedly arranged on the bottom plate of the closed bin 1 through a fixing rod 21; the fixed plate 14 is fixedly installed on the top surface of the dust removal module 3 through the vibration unit 15; the moving module 2 is used for shifting the wafer 6; a metal sucker 141 is fixedly mounted on the fixing plate 14, and the metal sucker 141 is used for fixing the bottom surface of the wafer 6; the dust removal module 3 is used for cleaning impurities on the surface of the wafer 6; the clamping piece 16 is used for limiting the dust removal module 3; the controller is used for controlling the work of the moving module 2, the vibrating unit 15, the dust removing module 3 and the clamping piece 16;
the movable module 2 is used for fixing the wafer 6 by matching with the fixed plate 14, and the vibration unit 15 has two working modes, wherein the first working mode is to vibrate the fixed plate 14; the second operation mode of the vibration unit 15 is to fix the fixing plate 14;
the mobile module 2 comprises a first cylinder 22, a first mounting plate 23, a first fixing frame 24, a third air pressure rod 25, a first sliding block 26 and a first suction device 27; the first cylinder 22 is fixedly arranged on the fixed rod 21 through a first mounting plate 23; a first sliding rail 28 is arranged at the top of the inner wall of the first cylinder 22; the first fixing frame 24 moves in the first sliding rail 28 through the first sliding block 26, and the first fixing frame 24 is fixedly connected with the first suction device 27 through the third air pressure rod 25; the number of the first suction devices 27 is four, and the four first suction devices 27 are matched for rotating the wafer 6; when the third pneumatic rod 25 is stretched, the first suction device 27 is driven to be in close contact with the wafer 6, and the suction pump sucks negative pressure from the first suction device 27 to enable the first suction device 27 to suck and fix the wafer 6; the first suction device 27 is matched with the first slide rail 28 through the first slide block 26 to realize the movement of the first suction device 27; the controller controls the four first suction devices 27 to work alternately, so that the surface of the wafer 6 shielded by the first suction devices 27 is exposed, and the phenomenon that part of the surface of the wafer 6 cannot be etched due to shielding is prevented; the efficiency of 6 carved membrane of wafer has been improved.
The first mounting plate 23 is a circular mounting plate, and a second sliding rail 29 is arranged on the inner wall of the first mounting plate 23; the dust removal module 3 is provided with a second sliding block 31, and the second sliding block 31 is matched with the second sliding rail 29 to enable the dust removal module 3 to rotate. After the clamping piece 16 does not clamp the dust removal module 3, the dust removal module 3 rotates to drive the wafer 6 to rotate, so that dust on the surface of the wafer 6 is more easily separated from the surface of the wafer 6; under the action of negative pressure pumped by the suction pump to the closed bin 1, dust on the surface of the wafer 6 is pumped out of the closed bin 1.
As an embodiment of the invention, the dust removal module 3 comprises a second cylinder 32 and a second turntable 33, a first circular groove 34 is formed in the bottom surface of the second turntable 33, the upper end of the second cylinder 32 is installed in the first circular groove 34 in a rolling manner through a steel ball, and the bottom end of the second cylinder 32 is fixedly installed on the bottom plate of the closed bin 1; the first circular groove 34 enables the second rotary table 33 to rotate on the second cylinder 32 by matching with the second cylinder 32, and the second cylinder 32 is used for sealing the bottom of the second rotary table 33; a suction hole 17 is formed in the bottom plate of the closed bin 1; the top surface of the second turntable 33 is obliquely provided with a first hole 35 which penetrates through the second turntable 33; the suction hole 17 is used to rotate the second rotary disk 33 by cooperating with the first hole 35. When the suction pump pumps negative pressure to the second cylinder 32, the second rotary table 33 rotates under the action of the first hole 35, so as to drive the wafer 6 to rotate, accelerate the efficiency of dust separation on the surface of the wafer 6,
as an embodiment of the present invention, the first suction device 27 includes a third mounting plate 51, a sliding telescopic rod 52, a stretching type suction cup 53; the third mounting plate 51 is fixedly connected with a stretching type sucker 53 through a sliding telescopic rod 52, and a spring is sleeved on the outer layer of the sliding telescopic rod 52; the stretching type suction cup 53 is used for fixing the wafer 6 under negative pressure. When the stretching type suction cup 53 contacts with the surface of the wafer 6, the volume of the stretching type suction cup 53 is suddenly increased, so that the air pressure in the stretching type suction cup 53 is rapidly reduced for improving the adsorption capacity of the wafer 6; meanwhile, the sliding telescopic rod 52 sleeved with the spring is used for cooperating with the stretching type suction cup 53 to work, and when the volume of the stretching type suction cup 53 is increased, the length of the sliding telescopic rod 52 is reduced.
As an embodiment of the present invention, the stretching type suction cup 53 includes a second mounting plate 531, a second pneumatic rod 532, a bracket 533, a folding tube 534, and a fixing ring 535; the second mounting plate 531 is fixedly connected with a bracket 533 through a second pneumatic rod 532, and the bracket 533 is used for fixing the fixing ring 535; the fixed ring 535 is fixedly connected with a second mounting plate 531 through a folding tube 534; the second mounting plate 531 is provided with a second hole 536. When the fixing ring 535 contacts with the surface of the wafer 6, the second air pressure rod 532 stretches to drive the folding tube 534 to be stretched, so that the volume of the folding tube 534 is increased, the air pressure in the folding tube 534 is rapidly reduced, meanwhile, the negative pressure pump pumps negative pressure to the second hole 536 through the hose, and the adsorption fixing capacity of the stretching type suction cup 53 to the wafer 6 is further improved.
As an embodiment of the present invention, the vibration unit 15 includes four first pneumatic rods 151, the outer layers of the four first pneumatic rods 151 are sleeved with springs, the top ends of the springs are fixedly connected with the fixing plate 14, and the bottom ends of the springs are fixedly connected with the dust removal module 3; one side of each of the four primary air pressure rods 151 is fixedly installed on the dust removal module 3, and the other side of the primary air pressure rod 151 is not connected with the fixing plate 14. First, the first suction device 27 is separated from the top surface of the wafer 6, and the wafer 6 is fixed on the fixing plate 14; when the first pneumatic rod 151 is stretched, the fixing plate 14 is driven to move upwards, so that the spring is stretched and tensioned, and the fixing plate 14 cannot vibrate up and down; when the first pneumatic rod 151 contracts, the first pneumatic rod 151 is not in contact with the fixing plate 14, and at the moment, when the dust removal module 3 drives the fixing plate 14 to rotate, the fixing plate 14 can shake under the action of the spring, so that the separation efficiency of impurities on the surface of the wafer 6 is improved.
As an embodiment of the present invention, the retainer 16 includes a four-gauge air cylinder 161 and a pressing plate 162, and the top surface of the pressing plate 162 is provided with a corrugated line for increasing the friction of the pressing plate 162. When the wafer 6 needs to be etched, when the fourth air pressure rod 161 is stretched, the extrusion plate 162 is in close contact with the bottom surface of the second turntable 33, and the corrugated lines arranged on the top surface of the extrusion plate 162 improve the fixing efficiency of the extrusion plate 162 to the second turntable 33, so that the second turntable 33 does not rotate, and the etching precision of the wafer 6 is improved.
During operation, the fourth pneumatic rod 161 is stretched, the first pneumatic rod 151 is stretched, and the fixing plate 14 cannot rotate; the wafer 6 is placed on the fixing plate 14, the metal sucker 141 on the fixing plate 14 fixes the wafer 6, and then the controller fixes and displaces the wafer 6 through the four first suction devices 27; then, the wafer 6 is placed on the metal chuck 141, the metal chuck 141 fixes the wafer 6, at this time, the suction pump increases the air pressure in the metal chuck 141, and the wafer 6 is separated from the metal chuck 141; etching gas flows into the closed bin 1 through the gas injection port 13, the etching gas etches the surface of the wafer 6 under the combined action of the exciting coil 11 and the biasing device 12, and meanwhile, the controller controls the four first suction devices 27 to rotate the wafer 6, so that the part of the surface of the wafer 6, which is shielded by the first suction devices 27, is etched; meanwhile, the suction pump is used for pumping negative pressure to the closed bin 1, and discharging the gas in the closed bin 1.
After the etching of the wafer 6 is finished, the controller places the wafer 6 on the fixing plate 14 through the first suction device 27, and the metal sucker 141 on the fixing plate 14 fixes the wafer 6 at a negative pressure; at this time, the fourth pneumatic rod 161 contracts and the first pneumatic rod 151 contracts; the excitation coil 11 and the biasing means 12 are deactivated; nitrogen gas flows into through gas injection mouth 13 and clears up wafer 6 surface in closing storehouse 1, and the suction pump makes No. two carousel 33 rotate through taking out the negative pressure to No. two drums 32 simultaneously, and at this moment, fixed plate 14 drives wafer 6 and rotates, and fixed plate 14 drives wafer 6 vibrations from top to bottom simultaneously, and the impurity on wafer 6 surface is discharged through the suction pump.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (3)
1. A wafer etching device comprises a closed bin (1), an exciting coil (11) and a bias device (12), wherein a gas injection port (13) is formed in a top plate of the closed bin (1); the method is characterized in that: the device is characterized by further comprising a moving module (2), a fixing plate (14), a vibrating unit (15), a dust removing module (3), a clamping piece (16) and a controller, wherein the moving module (2) is fixedly arranged on a bottom plate of the closed bin (1) through a fixing rod (21); the fixed plate (14) is fixedly arranged on the top surface of the dust removal module (3) through a vibration unit (15); the moving module (2) is used for shifting the wafer (6); the fixing plate (14) is fixedly provided with a metal sucker (141), and the metal sucker (141) is used for fixing the bottom surface of the wafer (6); the dust removal module (3) is used for cleaning impurities on the surface of the wafer (6); the clamping piece (16) is used for limiting the dust removal module (3); the controller is used for controlling the work of the moving module (2), the vibrating unit (15), the dust removal module (3) and the clamping piece (16); wherein the content of the first and second substances,
the moving module (2) comprises a first cylinder (22), a first mounting plate (23), a first fixing frame (24), a third air pressure rod (25), a first sliding block (26) and a first suction device (27); the first cylinder (22) is fixedly arranged on the fixed rod (21) through a first mounting plate (23); a first sliding rail (28) is arranged at the top of the inner wall of the first cylinder (22); the first fixing frame (24) moves in the first sliding rail (28) through the first sliding block (26), and the first fixing frame (24) is fixedly connected with the first suction device (27) through the third air pressure rod (25); the number of the first suction devices (27) is four, and the four first suction devices (27) are matched for rotating the wafer (6);
the first mounting plate (23) is a circular mounting plate, and a second sliding rail (29) is arranged on the inner wall of the first mounting plate (23); the dust removal module (3) is provided with a second sliding block (31), and the second sliding block (31) is matched with a second sliding rail (29) to enable the dust removal module (3) to rotate;
the dust removal module (3) comprises a second cylinder (32) and a second rotary table (33), a first circular groove (34) is formed in the bottom surface of the second rotary table (33), the upper end of the second cylinder (32) is installed in the first circular groove (34) in a rolling mode through steel ball balls, and the bottom end of the second cylinder (32) is fixedly installed on the bottom plate of the closed bin (1); a suction hole (17) is arranged on the bottom plate of the closed bin (1); the top surface of the second turntable (33) is obliquely provided with a first hole (35) penetrating through the second turntable (33); the suction hole (17) is matched with the first hole (35) to rotate the second turntable (33);
the first suction device (27) comprises a third mounting plate (51), a sliding telescopic rod (52) and a stretching type sucker (53); the third mounting plate (51) is fixedly connected with the stretching type sucker (53) through a sliding telescopic rod (52), and a spring is sleeved on the outer layer of the sliding telescopic rod (52); the stretching type sucker (53) is used for fixing the wafer (6) under negative pressure;
the vibration unit (15) comprises four first air pressure rods (151), springs are sleeved on the outer layers of the four first air pressure rods (151), the top ends of the springs are fixedly connected with the fixing plate (14), and the bottom ends of the springs are fixedly connected with the dust removal module (3); one side of each primary air pressure rod (151) in the four primary air pressure rods (151) is fixedly arranged on the dust removal module (3), and the other side of each primary air pressure rod (151) is not connected with the fixing plate (14).
2. The wafer etching apparatus according to claim 1, wherein: the stretching type sucker (53) comprises a second mounting plate (531), a second air pressure rod (532), a support (533), a folding pipe (534) and a fixing ring (535); the second mounting plate (531) is fixedly connected with the bracket (533) through a second air pressure rod (532), and the bracket (533) is used for fixing the fixing ring (535); the fixing ring (535) is fixedly connected with the second mounting plate (531) through a folding pipe (534); and a second hole (536) is formed in the second mounting plate (531).
3. The wafer etching apparatus according to claim 1, wherein: the clamping piece (16) comprises a four-pressure air rod (161) and a pressing plate (162), and the top surface of the pressing plate (162) is provided with corrugated lines which are used for improving the friction force of the pressing plate (162).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810468778.3A CN108682636B (en) | 2018-05-16 | 2018-05-16 | Wafer etching device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810468778.3A CN108682636B (en) | 2018-05-16 | 2018-05-16 | Wafer etching device |
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| CN108682636A CN108682636A (en) | 2018-10-19 |
| CN108682636B true CN108682636B (en) | 2020-10-30 |
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| CN111267017B (en) * | 2020-03-17 | 2022-05-13 | 华天慧创科技（西安）有限公司 | Support tool for avoiding middle deformation during wafer film coating and working method |
| CN117712015B (en) * | 2023-12-12 | 2024-05-28 | 江苏亚电科技股份有限公司 | Wafer supporting disc of single wafer cleaning device with clamping function |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033444B1 (en) * | 1999-06-21 | 2006-04-25 | Tokyo Electron Limited | Plasma processing apparatus, and electrode structure and table structure of processing apparatus |
| CN103730318A (en) * | 2013-11-15 | 2014-04-16 | 中微半导体设备(上海)有限公司 | Wafer edge protection ring and method for reducing particles at wafer edge |
| CN105321813A (en) * | 2014-05-26 | 2016-02-10 | 松下知识产权经营株式会社 | Plasma processing method and apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020124867A1 (en) * | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033444B1 (en) * | 1999-06-21 | 2006-04-25 | Tokyo Electron Limited | Plasma processing apparatus, and electrode structure and table structure of processing apparatus |
| CN103730318A (en) * | 2013-11-15 | 2014-04-16 | 中微半导体设备(上海)有限公司 | Wafer edge protection ring and method for reducing particles at wafer edge |
| CN105321813A (en) * | 2014-05-26 | 2016-02-10 | 松下知识产权经营株式会社 | Plasma processing method and apparatus |
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