EP1198009A2 - Transistor SiGe, varactor et élément P-I-N pour des circuits BiCMOS et des résaux ESD - Google Patents
Transistor SiGe, varactor et élément P-I-N pour des circuits BiCMOS et des résaux ESD Download PDFInfo
- Publication number
- EP1198009A2 EP1198009A2 EP01308380A EP01308380A EP1198009A2 EP 1198009 A2 EP1198009 A2 EP 1198009A2 EP 01308380 A EP01308380 A EP 01308380A EP 01308380 A EP01308380 A EP 01308380A EP 1198009 A2 EP1198009 A2 EP 1198009A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- sige
- circuit
- region
- collector
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 120
- 230000003139 buffering effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000007704 transition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the SiGe device in such a two terminal connection i.e., base-collector diode configuration
- Table 1 further show that with a large SiGe npn, a low linear resistance structure may be obtained with no saturation phenomenon prior to failure.
- the base length is decreased to 12 ⁇ m, the onset of velocity saturation leads to a transition to a high resistance state that is significantly above the linear resistance.
- the structure current does not increase leading the ability to buffer off a voltage of 5.9 Volts at a failure current of 510 mA.
- the voltage at which the velocity saturation occurs is about 3 V across the SiGe transistor.
- LTE low-temperature epitaxy
- PolySilicon Germanium extrinsic base region 212 formed of p- dopant material by UHV/CVD process on top of the base region 208 in overlapping relation with each STI region 210a, b. It is understood that the Ge concentration may be varied during the film deposition process to provide position-dependent SiGe alloy film for profile and device optimization of the base region.
- extrinsic base implant regions 215a,b e.g., p+ dopant material, extending into the collector region 206 and abutting a respective STI region 210a, b for decreasing the extrinsic base resistance.
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US677898 | 2000-10-03 | ||
US09/677,898 US6552406B1 (en) | 2000-10-03 | 2000-10-03 | SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1198009A2 true EP1198009A2 (fr) | 2002-04-17 |
EP1198009A3 EP1198009A3 (fr) | 2004-07-21 |
Family
ID=24720532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01308380A Withdrawn EP1198009A3 (fr) | 2000-10-03 | 2001-10-01 | Transistor SiGe, varactor et élément P-I-N pour des circuits BiCMOS et des résaux ESD |
Country Status (4)
Country | Link |
---|---|
US (2) | US6552406B1 (fr) |
EP (1) | EP1198009A3 (fr) |
KR (1) | KR100520022B1 (fr) |
CN (1) | CN1214463C (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3758053A1 (fr) * | 2019-06-28 | 2020-12-30 | STMicroelectronics (Crolles 2) SAS | Procédé de réalisation d'une diode à capacité variable et d'un transistor bipolaire |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100395159B1 (ko) * | 2001-08-17 | 2003-08-19 | 한국전자통신연구원 | 규소게르마늄을 이용한 바이씨모스 소자 제조 방법 |
KR100754561B1 (ko) * | 2002-04-26 | 2007-09-05 | 인터내셔널 비지네스 머신즈 코포레이션 | 컷오프 주파수가 향상된 실리콘 게르마늄 트랜지스터 |
US6885534B2 (en) * | 2002-10-21 | 2005-04-26 | Silicon Integrated Systems Corporation | Electrostatic discharge protection device for giga-hertz radio frequency integrated circuits with varactor-LC tanks |
US6949440B2 (en) * | 2003-11-11 | 2005-09-27 | United Microelectronics Corp. | Method of forming a varactor |
CN1324930C (zh) * | 2004-02-27 | 2007-07-04 | 联华电子股份有限公司 | 适用于射频集成电路的静电放电防护电路 |
US7136268B2 (en) * | 2004-03-31 | 2006-11-14 | International Business Machines Corporation | Tunable ESD trigger and power clamp circuit |
US20050242371A1 (en) * | 2004-04-30 | 2005-11-03 | Khemka Vishnu K | High current MOS device with avalanche protection and method of operation |
US7355260B2 (en) * | 2004-06-30 | 2008-04-08 | Freescale Semiconductor, Inc. | Schottky device and method of forming |
TWI281740B (en) * | 2004-09-08 | 2007-05-21 | Winbond Electronics Corp | Electrostatic discharge protection circuit |
US7098513B2 (en) * | 2005-01-17 | 2006-08-29 | International Business Machines Corporation | Low trigger voltage, low leakage ESD NFET |
US20060187595A1 (en) * | 2005-02-22 | 2006-08-24 | International Business Machines Corporation | Apparatus and method for controlling leakage current in bipolar esd clamping devices |
US7282386B2 (en) * | 2005-04-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Schottky device and method of forming |
US7550787B2 (en) | 2005-05-31 | 2009-06-23 | International Business Machines Corporation | Varied impurity profile region formation for varying breakdown voltage of devices |
US7459367B2 (en) * | 2005-07-27 | 2008-12-02 | International Business Machines Corporation | Method of forming a vertical P-N junction device |
US7560798B2 (en) * | 2006-02-27 | 2009-07-14 | International Business Machines Corporation | High performance tapered varactor |
JP2007336254A (ja) * | 2006-06-15 | 2007-12-27 | Oki Electric Ind Co Ltd | 電圧制御発振器 |
US7617367B2 (en) * | 2006-06-27 | 2009-11-10 | International Business Machines Corporation | Memory system including a two-on-one link memory subsystem interconnection |
US7696604B2 (en) * | 2007-10-23 | 2010-04-13 | International Business Machines Corporation | Silicon germanium heterostructure barrier varactor |
US20110012090A1 (en) * | 2007-12-07 | 2011-01-20 | Agency For Science, Technology And Research | Silicon-germanium nanowire structure and a method of forming the same |
CN104253410B (zh) * | 2014-09-11 | 2017-04-19 | 北京大学 | 防过压击穿型输入级esd保护电路 |
US10818772B2 (en) | 2018-04-24 | 2020-10-27 | Globalfoundries Inc. | Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer |
Citations (4)
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US5446302A (en) * | 1993-12-14 | 1995-08-29 | Analog Devices, Incorporated | Integrated circuit with diode-connected transistor for reducing ESD damage |
EP0845848A2 (fr) * | 1996-11-27 | 1998-06-03 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Limiteur de protection d'une entrée d'alimentation d'un circuit intégré |
US5821149A (en) * | 1996-03-14 | 1998-10-13 | Daimler Benz Ag | Method of fabricating a heterobipolar transistor |
EP0962985A1 (fr) * | 1998-06-05 | 1999-12-08 | STMicroelectronics S.A. | Transistor bipolaire vertical comportant une base extrinsèque de rugosité réduite, et procédé de fabrication |
Family Cites Families (10)
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GB8708926D0 (en) * | 1987-04-14 | 1987-05-20 | British Telecomm | Bipolar transistor |
US5391503A (en) * | 1991-05-13 | 1995-02-21 | Sony Corporation | Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask |
JP2655052B2 (ja) * | 1993-10-07 | 1997-09-17 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5440162A (en) * | 1994-07-26 | 1995-08-08 | Rockwell International Corporation | ESD protection for submicron CMOS circuits |
US5517049A (en) | 1994-09-30 | 1996-05-14 | Vlsi Technology, Inc. | CMOS output buffer with enhanced ESD resistance |
US5629544A (en) | 1995-04-25 | 1997-05-13 | International Business Machines Corporation | Semiconductor diode with silicide films and trench isolation |
WO1997020348A1 (fr) | 1995-11-30 | 1997-06-05 | Micron Technology, Inc. | Structure de protection contre les decharges electrostatiques dans des puces de semi-conducteurs |
US5872378A (en) | 1997-04-07 | 1999-02-16 | International Business Machines Corporation | Dual thin oxide ESD network for nonvolatile memory applications |
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-
2000
- 2000-10-03 US US09/677,898 patent/US6552406B1/en not_active Expired - Fee Related
-
2001
- 2001-09-21 KR KR10-2001-0058549A patent/KR100520022B1/ko not_active IP Right Cessation
- 2001-09-30 CN CNB011353554A patent/CN1214463C/zh not_active Expired - Fee Related
- 2001-10-01 EP EP01308380A patent/EP1198009A3/fr not_active Withdrawn
-
2003
- 2003-01-28 US US10/353,176 patent/US6720637B2/en not_active Expired - Fee Related
Patent Citations (4)
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US5446302A (en) * | 1993-12-14 | 1995-08-29 | Analog Devices, Incorporated | Integrated circuit with diode-connected transistor for reducing ESD damage |
US5821149A (en) * | 1996-03-14 | 1998-10-13 | Daimler Benz Ag | Method of fabricating a heterobipolar transistor |
EP0845848A2 (fr) * | 1996-11-27 | 1998-06-03 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Limiteur de protection d'une entrée d'alimentation d'un circuit intégré |
EP0962985A1 (fr) * | 1998-06-05 | 1999-12-08 | STMicroelectronics S.A. | Transistor bipolaire vertical comportant une base extrinsèque de rugosité réduite, et procédé de fabrication |
Non-Patent Citations (6)
Title |
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"BIPOLAR TRANSISTORS WITH POLY-SIGE EMITTER CONTACTS AND/OR POLY-SIGE EXTRINSIC BASES" IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 36, no. 9A, 1 September 1993 (1993-09-01), page 253 XP000395379 ISSN: 0018-8689 * |
DUNN J ET AL: "TRENDS IN SILICON GERMANIUM BICMOS INTEGRATION AND RELIABILITY" 2000 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS. 38TH ANNUAL. SAN JOSE, CA, APRIL 10-13, 2000, IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, NEW YORK, NY: IEEE, US, 2000, pages 237-242, XP001077899 ISBN: 0-7803-5861-9 * |
GRUHLE A ET AL: "2-12GHZ VCO WITH SIGE HETEROJUNCTION BIPOLAR TRANSISTOR" 24TH. EUROPEAN MICROWAVE CONFERENCE PROCEEDINGS. CANNES, SEPT. 5 - 8, 1994, EUROPEAN MICROWAVE CONFERENCE PROCEEDINGS, NEXUS BUSINESS COMMUNICATIONS, GB, vol. 1 CONF. 24, 5 September 1994 (1994-09-05), pages 648-657, XP000643225 ISBN: 0-9518-0325-5 * |
VOLDMAN S ET AL: "Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors" 2000 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS. 38TH ANNUAL (CAT. NO.00CH37059), 2000 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS. 38TH ANNUAL, SAN JOSE, CA, USA, 10-13 APRIL 2000, pages 310-316, XP002257823 2000, Piscataway, NJ, USA, IEEE, USA ISBN: 0-7803-5860-0 * |
VOLDMAN S ET AL: "Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors" ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 2000 (IEEE CAT. NO.00TH8476), ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 2000, ANAHEIM, CA, USA, 26-28 SEPT. 2000, pages 239-250, XP010527039 2000, Rome, NY, USA, ESD Assoc, USA ISBN: 1-58537-018-5 * |
VOLDMAN S ET AL: "ESD ROBUSTNESS OF A BICMOS SIGE TECHNOLOGY" PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING. ( BCTM ). MINNEAPOLIS, MN, SEPT. 24 - 26, 2000, IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, NEW YORK, NY: IEEE, US, 24 September 2000 (2000-09-24), pages 214-217, XP000977233 ISBN: 0-7803-6385-X * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3758053A1 (fr) * | 2019-06-28 | 2020-12-30 | STMicroelectronics (Crolles 2) SAS | Procédé de réalisation d'une diode à capacité variable et d'un transistor bipolaire |
US11251084B2 (en) | 2019-06-28 | 2022-02-15 | Stmicroelectronics (Crolles 2) Sas | Method for producing a diode |
US11817353B2 (en) | 2019-06-28 | 2023-11-14 | Stmicroelectronics (Crolles 2) Sas | Method for producing a diode |
Also Published As
Publication number | Publication date |
---|---|
KR100520022B1 (ko) | 2005-10-11 |
CN1347155A (zh) | 2002-05-01 |
US20030146484A1 (en) | 2003-08-07 |
CN1214463C (zh) | 2005-08-10 |
KR20020026813A (ko) | 2002-04-12 |
EP1198009A3 (fr) | 2004-07-21 |
US6720637B2 (en) | 2004-04-13 |
US6552406B1 (en) | 2003-04-22 |
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