EP1183739A1 - Procede et dispositif de mise en contact electrique d'une surface de materiau recouverte d'au moins une couche de dielectrique - Google Patents
Procede et dispositif de mise en contact electrique d'une surface de materiau recouverte d'au moins une couche de dielectriqueInfo
- Publication number
- EP1183739A1 EP1183739A1 EP00920665A EP00920665A EP1183739A1 EP 1183739 A1 EP1183739 A1 EP 1183739A1 EP 00920665 A EP00920665 A EP 00920665A EP 00920665 A EP00920665 A EP 00920665A EP 1183739 A1 EP1183739 A1 EP 1183739A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- dielectric layer
- layer
- light
- material surface
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 238000001465 metallisation Methods 0.000 claims abstract description 11
- 238000005286 illumination Methods 0.000 claims abstract description 3
- 238000002161 passivation Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 239000004922 lacquer Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 description 15
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 7
- 238000002679 ablation Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Definitions
- Another feature of such highly efficient solar cells are narrow ( ⁇ 40 ⁇ m) and high front contacts (> 10 ⁇ m) with low contact and line resistance.
- the surface contacts designed as grid fingers should cover as little solar cell area as possible, so they have to be as narrow as possible, and should also have the lowest possible line resistance for removing the charge carriers separated in the solar cell, so their line cross-section should be as large as possible.
- the metal layer is applied by vapor deposition.
- a metal shadow mask can be used on the front of the solar cell to produce a suitable contact structure.
- the invention is based on the idea of creating a specific pattern or a specific arrangement of contact openings through the passivation layer, which also serves as an anti-reflection layer, at which the material surface to be contacted, preferably the emitter and base layer of the solar cell, is completely exposed locally.
- the local removal of the passivation layer is preferably carried out by means of laser ablation, i.e. direct laser light on the surface of the passivation layer removes it by sublimation until the bare emitter or base surface is exposed.
- the ablation location that is to say the layer region to be processed, not exactly in the focal point or in the focal line of the microlens arrangement, but rather to arrange it somewhat behind the focal point or the focal line in the beam direction.
- an increased homogeneity of the intensity is achieved on the surface or location to be ablated.
- Increased damage, for example caused by hot spots, can be avoided in this way.
- An alternative method according to the invention also uses the microlens array in combination with a liquid coupling medium, as described above, only in contrast to the above procedure does no material be removed by photoablation, but rather local electrical ones Contact points created by local sintering.
- the starting point for this is a layer combination as mentioned at the beginning, but an electrically conductive layer, preferably a metal layer, is applied to the passivation layer, which is synonymous with the dielectric layer. If the light beams are directed onto the electrically conductive layer via the microlens arrangement in the same way as in the above method, sintering processes take place in the area of the focal positions, by means of which local electrical transitions are produced from the electrically conductive layer through the passivation layer to the material surface.
- the liquid coupling medium serves an improved imaging optics with regard to greater depth of field and focal lengths as well as effective cooling of the layers.
- the surface metal layer When contacting the front of the solar cell, the surface metal layer is preferably removed after exposure and the associated sintering, so that only the electrical contacting channels remain through the passivation layer for further processing.
- the all-over electrically conductive layer can remain on the dielectric layer.
- a liquid or viscous medium preferably water
- a pump unit which conveys the water through the intermediate gap between the microlens arrangement and the passivation layer.
- the microlenses Due to the presence of the coupling medium, the microlenses have a very large depth of field and can also be used on uneven substrates.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Cette invention concerne un procédé et un dispositif de mise en contact électrique d'une surface de matériau recouverte d'au moins une couche de diélectrique. La présente invention se caractérise par le fait que la lumière d'une source de lumière est dirigée sur un dispositif formé d'une pluralité de microlentilles optiques disposées de manière ordonnée, dirigeant la lumière sur la couche de diélectrique, par la présence, entre le dispositif formé d'une pluralité de microlentilles optiques disposées de manière ordonnée et la couche de diélectrique, d'un milieu liquide ou visqueux, pouvant être traversé par la lumière de la source de lumière, par le fait qu'un éclairage ciblé de la couche de diélectrique permet de retirer localement de la matière de la couche de diélectrique, jusqu'à ce que la surface de matériau se trouve localement à nu, et par le fait qu'une métallisation de la surface de matériau à travers la couche de diélectrique a lieu aux endroits où la surface de matériau se trouve localement à nu.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19915666 | 1999-04-07 | ||
| DE19915666A DE19915666A1 (de) | 1999-04-07 | 1999-04-07 | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
| PCT/EP2000/003036 WO2000060674A1 (fr) | 1999-04-07 | 2000-04-05 | Procede et dispositif de mise en contact electrique d'une surface de materiau recouverte d'au moins une couche de dielectrique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1183739A1 true EP1183739A1 (fr) | 2002-03-06 |
Family
ID=7903771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP00920665A Withdrawn EP1183739A1 (fr) | 1999-04-07 | 2000-04-05 | Procede et dispositif de mise en contact electrique d'une surface de materiau recouverte d'au moins une couche de dielectrique |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1183739A1 (fr) |
| DE (1) | DE19915666A1 (fr) |
| WO (1) | WO2000060674A1 (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326505B4 (de) * | 2003-06-10 | 2012-01-19 | Solarion Ag | Laserritzen von Dünnschichthalbleiterbauelementen |
| DE102007034644A1 (de) * | 2007-07-23 | 2009-01-29 | Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. | Verfahren und Vorrichtung zur Laserstrukturierung von Solarzellen |
| DE102008030725B4 (de) * | 2008-07-01 | 2013-10-17 | Deutsche Cell Gmbh | Verfahren zur Herstellung einer Kontakt-Struktur mittels einer Galvanikmaske |
| DE102008038119A1 (de) * | 2008-08-17 | 2010-02-18 | Du, Keming, Dr. | Kompakte und intelligente Laserbearbeitungsköpfe |
| DE102009018112B3 (de) * | 2009-04-20 | 2010-12-16 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
| DE102009020774B4 (de) | 2009-05-05 | 2011-01-05 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates |
| DE102010028189B4 (de) | 2010-04-26 | 2018-09-27 | Solarworld Industries Gmbh | Solarzelle |
| DE102010020175A1 (de) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung |
| DE102011017292A1 (de) * | 2011-04-15 | 2012-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vefahren zur Erzeugung einer Metallstruktur zur lokalen elektrischen Kontaktierung einer Halbleiterstruktur |
| FR2990055B1 (fr) | 2012-04-30 | 2014-12-26 | Total Sa | Matrice de depot d'au moins un fluide conducteur sur un substrat, ainsi que dispositif comprenant cette matrice et procede de depot |
| KR101358535B1 (ko) | 2012-06-05 | 2014-02-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
| DE102014110262A1 (de) | 2014-07-22 | 2016-01-28 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung eines Rückseitenkontaktsystems für eine Silizium-Dünnschicht-Solarzelle |
| CN110153553B (zh) * | 2019-05-23 | 2020-09-15 | 浙江大学 | 一种基于微透镜阵列的激光打孔系统 |
| CN118417683A (zh) * | 2023-02-02 | 2024-08-02 | 苏州苏大维格科技集团股份有限公司 | 光伏电池片电极及其制作方法和制作装置、以及应用 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1765145C3 (de) * | 1968-04-09 | 1973-11-29 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Verfahren zum Bearbeiten dunner Schichten von elektrischen Schalt kreisen mit Laserstrahlen |
| US5216543A (en) * | 1987-03-04 | 1993-06-01 | Minnesota Mining And Manufacturing Company | Apparatus and method for patterning a film |
| US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| DE59103714D1 (de) * | 1991-10-07 | 1995-01-12 | Siemens Ag | Laserbearbeitungsverfahren für einen Dünnschichtaufbau. |
| DE4143066A1 (de) * | 1991-12-27 | 1993-07-01 | Jenoptik Jena Gmbh | Verfahren und anordnung zum markieren von oberflaechen |
| DE4234342C2 (de) * | 1992-10-12 | 1998-05-14 | Fraunhofer Ges Forschung | Verfahren zur Materialbearbeitung mit Laserstrahlung |
| KR100319871B1 (ko) * | 1994-01-28 | 2002-08-21 | 삼성전자 주식회사 | 액정배향제어막및그제조방법,이를제조하기위한제조장치및제조장치에이용되는마스크의제조방법 |
| GB9619839D0 (en) * | 1996-09-23 | 1996-11-06 | Hugle Lithography Inc | Photolithography masking arrangements |
-
1999
- 1999-04-07 DE DE19915666A patent/DE19915666A1/de not_active Ceased
-
2000
- 2000-04-05 EP EP00920665A patent/EP1183739A1/fr not_active Withdrawn
- 2000-04-05 WO PCT/EP2000/003036 patent/WO2000060674A1/fr not_active Application Discontinuation
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0060674A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19915666A1 (de) | 2000-10-19 |
| WO2000060674A1 (fr) | 2000-10-12 |
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