EP1126514A2 - Ätzverfahren - Google Patents
Ätzverfahren Download PDFInfo
- Publication number
- EP1126514A2 EP1126514A2 EP01110287A EP01110287A EP1126514A2 EP 1126514 A2 EP1126514 A2 EP 1126514A2 EP 01110287 A EP01110287 A EP 01110287A EP 01110287 A EP01110287 A EP 01110287A EP 1126514 A2 EP1126514 A2 EP 1126514A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- gas
- sample
- etching
- anticorrosion
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5647389 | 1989-03-10 | ||
JP5647389 | 1989-03-10 | ||
EP90302566A EP0387097A1 (de) | 1989-03-10 | 1990-03-09 | Verfahren und Gerät zum Musterbehandeln |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90302566A Division EP0387097A1 (de) | 1989-03-10 | 1990-03-09 | Verfahren und Gerät zum Musterbehandeln |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1126514A2 true EP1126514A2 (de) | 2001-08-22 |
EP1126514A3 EP1126514A3 (de) | 2003-02-12 |
Family
ID=13028073
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90302566A Withdrawn EP0387097A1 (de) | 1989-03-10 | 1990-03-09 | Verfahren und Gerät zum Musterbehandeln |
EP01110287A Withdrawn EP1126514A3 (de) | 1989-03-10 | 1990-03-09 | Ätzverfahren |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90302566A Withdrawn EP0387097A1 (de) | 1989-03-10 | 1990-03-09 | Verfahren und Gerät zum Musterbehandeln |
Country Status (3)
Country | Link |
---|---|
US (1) | US4985113A (de) |
EP (2) | EP0387097A1 (de) |
KR (1) | KR0174814B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186659B2 (en) * | 2004-10-25 | 2007-03-06 | Hitachi High-Technologies Corporation | Plasma etching method |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200017A (en) * | 1989-02-27 | 1993-04-06 | Hitachi, Ltd. | Sample processing method and apparatus |
EP0416774B1 (de) * | 1989-08-28 | 2000-11-15 | Hitachi, Ltd. | Verfahren zur Behandlung eines Aluminium enthaltenden Musters |
JP3078821B2 (ja) * | 1990-05-30 | 2000-08-21 | 豊田合成株式会社 | 半導体のドライエッチング方法 |
KR950010044B1 (ko) * | 1990-06-27 | 1995-09-06 | 후지쓰 가부시끼가이샤 | 반도체 집적회로의 제조방법 및 그에 사용된 제조장치 |
JP2663704B2 (ja) * | 1990-10-30 | 1997-10-15 | 日本電気株式会社 | Al合金の腐食防止法 |
JPH04311033A (ja) * | 1991-02-20 | 1992-11-02 | Micron Technol Inc | 半導体デバイスのエッチング後処理方法 |
JP3185150B2 (ja) * | 1991-03-15 | 2001-07-09 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
FR2677668B1 (fr) * | 1991-06-14 | 1993-10-15 | France Telecom | Procede de nettoyage de surfaces metalliques oxydees dans la fabrication de reseaux d'interconnexions et plaquettes pour de tels reseaux. |
US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
US5240555A (en) * | 1992-04-16 | 1993-08-31 | Eastman Kodak Company | Method and apparatus for cleaning semiconductor etching machines |
US5350488A (en) * | 1992-12-10 | 1994-09-27 | Applied Materials, Inc. | Process for etching high copper content aluminum films |
JP2674488B2 (ja) * | 1993-12-01 | 1997-11-12 | 日本電気株式会社 | ドライエッチング室のクリーニング方法 |
US5378312A (en) * | 1993-12-07 | 1995-01-03 | International Business Machines Corporation | Process for fabricating a semiconductor structure having sidewalls |
US5533635A (en) * | 1994-10-11 | 1996-07-09 | Chartered Semiconductor Manufacturing Pte. Ltd. | Method of wafer cleaning after metal etch |
US5780363A (en) * | 1997-04-04 | 1998-07-14 | International Business Machines Coporation | Etching composition and use thereof |
DE69727658T2 (de) * | 1997-04-22 | 2005-04-28 | Imec Vzw | Kontinuierlicher Ofen mit hohem Durchsatz für Diffusionsbehandlung mit verschiedenen Diffusionsquellen |
US6117266A (en) | 1997-12-19 | 2000-09-12 | Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) | Furnace for continuous, high throughput diffusion processes from various diffusion sources |
US6209551B1 (en) | 1997-06-11 | 2001-04-03 | Lam Research Corporation | Methods and compositions for post-etch layer stack treatment in semiconductor fabrication |
US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
US7569790B2 (en) * | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
US7166816B1 (en) | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
US6924455B1 (en) | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
US20020011215A1 (en) | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
WO2000003566A1 (fr) * | 1998-07-13 | 2000-01-20 | Toshiyuki Takamatsu | Appareil a decharge pour micro-ondes |
US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
US6153530A (en) * | 1999-03-16 | 2000-11-28 | Applied Materials, Inc. | Post-etch treatment of plasma-etched feature surfaces to prevent corrosion |
US6852636B1 (en) | 1999-12-27 | 2005-02-08 | Lam Research Corporation | Insitu post etch process to remove remaining photoresist and residual sidewall passivation |
EP1137058A1 (de) * | 2000-03-23 | 2001-09-26 | Motorola, Inc. | Verfahren zum Struktuiren von Schichten von Halbleitervorrichtungen |
JP3285341B2 (ja) | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
US6566270B1 (en) * | 2000-09-15 | 2003-05-20 | Applied Materials Inc. | Integration of silicon etch and chamber cleaning processes |
JP3466144B2 (ja) * | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
JP2002208541A (ja) * | 2001-01-11 | 2002-07-26 | Shiro Sakai | 窒化物系半導体装置及びその製造方法 |
JP3520919B2 (ja) * | 2001-03-27 | 2004-04-19 | 士郎 酒井 | 窒化物系半導体装置の製造方法 |
JP3548735B2 (ja) * | 2001-06-29 | 2004-07-28 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
US6943039B2 (en) * | 2003-02-11 | 2005-09-13 | Applied Materials Inc. | Method of etching ferroelectric layers |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US6841484B2 (en) * | 2003-04-17 | 2005-01-11 | Chentsau Ying | Method of fabricating a magneto-resistive random access memory (MRAM) device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668335A (en) * | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
JPS63233533A (ja) * | 1987-03-23 | 1988-09-29 | Anelva Corp | プラズマ処理装置 |
EP0305946A2 (de) * | 1987-08-28 | 1989-03-08 | Kabushiki Kaisha Toshiba | PLasma-Entschichtungsverfahren für organische und anorganische Schichten |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4372807A (en) * | 1982-03-25 | 1983-02-08 | Rca Corporation | Plasma etching of aluminum |
JPS59189633A (ja) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6037129A (ja) * | 1983-08-10 | 1985-02-26 | Hitachi Ltd | 半導体製造装置 |
US4592800A (en) * | 1984-11-02 | 1986-06-03 | Oerlikon-Buhrle U.S.A. Inc. | Method of inhibiting corrosion after aluminum etching |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
-
1990
- 1990-03-07 US US07/489,550 patent/US4985113A/en not_active Expired - Lifetime
- 1990-03-08 KR KR1019900003031A patent/KR0174814B1/ko not_active IP Right Cessation
- 1990-03-09 EP EP90302566A patent/EP0387097A1/de not_active Withdrawn
- 1990-03-09 EP EP01110287A patent/EP1126514A3/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668335A (en) * | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
JPS63233533A (ja) * | 1987-03-23 | 1988-09-29 | Anelva Corp | プラズマ処理装置 |
EP0305946A2 (de) * | 1987-08-28 | 1989-03-08 | Kabushiki Kaisha Toshiba | PLasma-Entschichtungsverfahren für organische und anorganische Schichten |
Non-Patent Citations (2)
Title |
---|
LEE W-Y ET AL: "REACTIVE ION ETCHING INDUCED CORROSION OL AL AND L-CU FILMS" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 52, no. 4, 1 April 1981 (1981-04-01), pages 2994-2999, XP002049325 ISSN: 0021-8979 * |
PATENT ABSTRACTS OF JAPAN vol. 013, no. 034 (E-708), 25 January 1989 (1989-01-25) & JP 63 233533 A (ANELVA CORP), 29 September 1988 (1988-09-29) * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186659B2 (en) * | 2004-10-25 | 2007-03-06 | Hitachi High-Technologies Corporation | Plasma etching method |
Also Published As
Publication number | Publication date |
---|---|
US4985113A (en) | 1991-01-15 |
EP1126514A3 (de) | 2003-02-12 |
KR900014636A (ko) | 1990-10-24 |
EP0387097A1 (de) | 1990-09-12 |
KR0174814B1 (ko) | 1999-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20010514 |
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AC | Divisional application: reference to earlier application |
Ref document number: 387097 Country of ref document: EP |
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AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
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PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
Designated state(s): DE FR GB |
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AKX | Designation fees paid |
Designated state(s): DE FR GB |
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17Q | First examination report despatched |
Effective date: 20050613 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20051227 |