EP0998030A1 - Circuit de détection de surintensité et protection à réglage automatique - Google Patents

Circuit de détection de surintensité et protection à réglage automatique Download PDF

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Publication number
EP0998030A1
EP0998030A1 EP99120865A EP99120865A EP0998030A1 EP 0998030 A1 EP0998030 A1 EP 0998030A1 EP 99120865 A EP99120865 A EP 99120865A EP 99120865 A EP99120865 A EP 99120865A EP 0998030 A1 EP0998030 A1 EP 0998030A1
Authority
EP
European Patent Office
Prior art keywords
circuit
output
mosfets
voltage
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99120865A
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German (de)
English (en)
Inventor
Stuart Pullen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Corp filed Critical Intersil Corp
Publication of EP0998030A1 publication Critical patent/EP0998030A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Definitions

  • a typical Class D amplifier 600 is shown in Figure 5.
  • the control circuit 660 drives a level shifter 661, which in turn drives upper and lower power fets.
  • the output of the fets is applied to a speaker through a filter, which converts the digital output of the fets into an audio analog signal.
  • Class D amplifiers are significantly more efficient than class AB amplifiers.
  • the disadvantages are higher part count, cost, electromagnetic interference, and poor performance. With increased integration and the introduction of sophisticated control integrated circuits these disadvantages are becoming less pronounced.
  • class D amplifiers will replace class AB amplifiers in many applications. Class D amplifiers already have a clear advantage in high power applications. As the cost and component count of these amplifiers fall, class D amplifiers will be able to complete with class AB amplifiers in low and medium power applications.
  • An integrator 610 has an audio input over an input resistor R IN . It has a digital feedback input A over resistor R DFB , and an analog feedback at input B over resistor R AFB .
  • the respective analog and digital feedback signals A, B are taken from the output of the bridge circuit 620 and the low-pass filter that comprises the inductor L and capacitor C LP .
  • the output at point A is a square wave with a 50% duty cycle. When the square wave is high, current flows through R DFB into the summing junction of the integrator 610.
  • R1 and R2 are used to add hysteresis to the comparator 612. These resistors can be used to adjust the comparator positive and negative thresholds.
  • the output of the comparator 612 goes low, the upper FET 22 turns off and after a short delay the lower FET 624 turns on.
  • the square wave goes low, and current now flows out of the integrator 610 summing junction through R DFB .
  • the output of the integrator 610 reverses and ramps up until it reaches the positive threshold of the comparator 612. This signals the lower FET 24 to turn off. After a short delay the upper FET 622 turns on.
  • the square wave goes high and the cycle continues. With no audio signal, the output at A is a 50% square wave, and the output of the integrator 610 is a triangle wave.
  • a sense resistor, 631 is placed in the return path of the speaker. The voltage drop across this resistor is proportional to the speaker current.
  • a low pass filter comprising inductor 632 and capacitor 633 removes switching noise.
  • Two comparators 634, 635 compare the voltage across the sense resistor to two adjustable thresholds (+/- 100mv in this example). If the voltage across the sense resistor exceeds 100mv or is less than -100mv, then the output of OR gate 36 will transition high indicating that an overcurrent event has been detected.
  • the present invention includes a class D amplifier comprising a bridge circuit with an output sensing circuit including the bridge circuit connected between high and low voltage power busses and comprising at least two mosfets connected in series with each other, characterized in that a first conversion circuit for converting the voltage drop across one of the mosfets into a current signal representative of the voltage across said one mosfet, said first conversion circuit having an output signal representative of the current through said one mosfet, and a second conversion circuit for converting the voltage drop across the other of the at least two mosfets into a current signal representative of the voltage drop across the other mosfet, said second conversion circuit having an output signal representative of the current trough said other mosfet.
  • the prior art circuit has a number of drawbacks. It consumes output power and so reduces the maximum possible efficiency of the amplifier.
  • the sense resistor can only protect the amplifier from short circuits across the speaker. Shorts from the positive speaker terminal to ground bypass the sense resistor. Thus, no short circuit protection exists in this condition.
  • the prior art circuit is slow and requires a filter to remove the switching noise. The filter introduces undesirable delays. If this circuit is used to implement overcurrent latch off, these delays will likely not cause a problem. If, on the other hand, this detection circuit is used to implement active current limit, these delays will make the current loop difficult to stabilize.
  • the sense resistor is expensive and, if it is undersized, it becomes a reliability risk.
  • the half bridge 20 includes two nmos FETS 22, 24. They are connected in series between high voltage bus 40 (+60 volts) and low voltage bus 42 (-60 volts). At the series connection of the two mosfets, their output is coupled to a low pass filter that comprises inductor 26 and capacitor 28. The low pass filter converts the digital output of the bridge 20 to an audio output that drives the load, loudspeaker 30.
  • the sensing circuit 100 includes two resistors 11 and 12, two pnp transistors 13 and 14, and a current mirror 15 and 16.
  • Resistors 11 and 12 convert the high voltages present in the bridge into a proportional current.
  • I 1 (+bus-Vbe)/R11 and when the upper Fet is on
  • I 2 (+bus-Vbe-Von)/R12 where Vbe is the drop across the base emitter junction of the pnp, Von is the drop across the mosfet 22, and R12 and R11 are the resistances of resistors 11 and 12 respectively.
  • the current mirror, mosfets 15 and 16 compares I 1 and I 2 . If I 2 is greater than I 1 the voltage at point A is high. Otherwise this voltage is low.
  • Resistor 12 is chosen smaller than 11 so that under normal operation, when FET 22 turns on, I 2 is greater than I 1 and the voltage at point A is high. During an overcurrent event, the drop across the FET 22, Von, is so great that I 2 is less than I 1 and the voltage a point A stays low.
  • resistor 12 is approximately 85% the value of resistor 11 and the rdson of the FET is 180 mohms.
  • this circuit In order for this circuit to function as an overcurrent detector, blanking is required. Under normal operation, point A is only high when FET 22 is on and the current in FET 22 is below the overcurrent threshold.
  • the blanking circuit in figure 2 allows FET 22 to turn on and point A to go high before any decision concerning overcurrent is made.
  • the output signal A is compared to a reference voltage of -3.5 volts. When the upper begins to turn on, a 300ns blanking pulse begins. If A does not go high before the blanking pulse ends then the output of the nand gate 52 will go low and the OC signal will go high. This signals an overcurrent event in FET 22.
  • the bridge can be shut down, or other measures can be taken to reduce the current.
  • FIG. 3 and 4 show a sensing circuit 150 that can be used to sense the current through the FET 24.
  • This circuit operates just like sensing circuit 100.
  • Resistors 21 and 12 convert the high voltage bus and output voltages into proportional currents.
  • the current mirror composed of pmos 33 and 34 and common base npns 31 and 32 compare the magnitude of I 2 and I 3 .
  • I 2 be greater than I 3 and point B will be low.
  • the drop across FET 24 will ensure that I 2 is less than I 3 and point B will stay high.
  • a blanking pulse is required to allow FET 24 sufficient time to turn on.
  • the upper and lower FET sensing circuits, 100 and 150 share resistor 12. Thus, only three IC pins are required to implement overcurrent protection for both FET 22 and FET 24.
  • the new sensing circuit has several advantages over the conventional approach.
  • the invention does not consume output power so the maximum efficiency of the amplifier is not reduced.
  • the sense circuit not only protects the amplifier from short circuits across the speaker but also guards against shorts from the positive speaker terminal to ground.
  • the sensing circuit is faster and does not require a filter to remove the switching noise introduces undesirable delays.
  • the sensing circuit is less expensive than the prior art output power resistor.
  • the new circuit is self-correcting. As the mosfets heat up, their rdson increases. Thus, the overcurrent threshold is lower at high temperatures.
  • Figure 8 illustrates the overcurrent limiting circuit (OCL) 200 that relies upon the same principle to prevent or correct an overcurrent event.
  • the overcurrent signal from AND gate 52 is input to art inverter 210 and then applied to the gate of pmos transistor 212.
  • transistor 212 When the overcurrent signal is high, transistor 212 is turned on and it connect a + 7 volt supply to an input resistor R CL . Injecting current into the summing junction of the integrator 10 reduces the gain of the amplifier and thereby reduces the current in the bridge 20.
  • the OCL circuit 200 has significant advantages over prior art interruption circuits. First of all, the OCL circuit 200 is very fast. No filtering of the audio power output is required and there is little or no delay. The OCL circuit 200 activates as soon as the monitored MOSFET exceeds it current limit. The OCL circuit 200 is easily stabilized. The delays inherent in a filtered analog feedback loop make such systems almost impossible to stabilize. With the digital approach used by OCL 200, filtering is eliminated and there are no delays. Finally, the adjustment to the output power is gradual and the output undergoes a soft clip. That eliminates the unwanted audio artifacts that a common when an analog interrupt circuit imposes a hard clip on the amplifier.
  • the output of transistor 212 remains high as long as there is a sensed overcurrent condition.
  • the overcurrent signal will ultimately reduce the gain of the integrator 10 and thereby control the overcurrent event.
  • power to the shorted mosfet be interrupted as quickly as possible.
  • a short circuit be distinguished from a low impedance condition. It is desired to only interrupt power to the mosfet in a true emergency. A typical emergency occurs when there is a short circuit and when a low load impedance condition persists for a time period long enough to cause permanent damage to the mosfet.
  • a protection circuit 300 ( Figure 9) senses both the short circuit and the low impedance conditions, distinguishes between them and timely interrupts power to the mosfets by bypassing the integrator and comparator and thereby avoiding their inherent delays.
  • the protection circuit 300 has a low pass filter 302 and first and second comparators 303, 304.
  • the low pass filter 302 is typically a resistor-capacitor network with a time constant chosen to filter out high frequency signals and only pass relatively low frequency, dc-like signals.
  • the input to the low pass filter 302 is a pulse signal that has a duty cycle that is proportional in duration to the load impedance.
  • the filter 302 converts the pulse signal into a signal with amplitude that is proportional to the load impedance.
  • the first comparator 303 detects a short circuit (almost zero load impedance); the second comparator detects a low impedance condition (one to two ohms).
  • the first comparator 303 has a short circuit reference voltage coupled to one input and the output of the filter 302 coupled to the other input.
  • the output of the first comparator 303 is coupled to a latch circuit 310.
  • the fast latch circuit 310 is located between the gate drive circuit 16 and the power mosfets. It includes an inverter 311, a current source in the form of a nmos fet 312, a comparator 313 and latch 314 that opens the connection between the drive circuit 16 and the mosfets 22, 24.
  • the current path of the fast latch circuit is around the integrator and the comparator so delays inherent in those components will not affect operation of latch 314.
  • the fast latch 314 opens and stays open as long as the comparator 303 is high.
  • the second comparator 304 has a low impedance reference voltage coupled to one input and the output of the filter 302 coupled to the other input.
  • the output of the comparator 304 is connected to a timer 321 that delays the operation of the latch 314 a short enough time to permit operation at low impedance (one or two ohms) without damage. If the low impedance signal persists beyond the predetermined time of the timer, than the slow latch opens and stays open as long as the comparator 304 is high.
  • a short circuit across one of the power mosfets will result in an overcurrent signal on the gate of transistor 212.
  • the output of the transistor 212 is filtered by low pass filter 302 to produce a high amplitude signal output. That output is received by the first comparator 303 and is compared to a short circuit reference voltage.
  • the fast latch circuit 310 operates the fast latch 314 to interrupt power to the overcurrent mosfet.
  • the overcurrent signal falls, the output of the filter 302 drops, the output of the comparator drops and the latch 314 closes to restore the drive signal to the gates of the mosfets.
  • the overcurrent signal is again high.
  • the output of the transistor 212 is filtered by low pass filter 302 to produce a high amplitude signal output. That output is received by the second comparator 304 and is compared to a low impedance reference voltage.
  • comparator 304 output triggers timer 321. After timer 321 times out, if the comparator 304 output is still high, the latch 314 opens.
  • the overcurrent signal falls, the output of the filter 302 drops, the output of the second comparator 304 drops and the latch 314 doses to restore the drive signal to the gates of the mosfets.
  • a sensing circuit 100 includes two resistors 11 and 12, two pnp transistors 13 and 14, and a current mirror 15 and 16.
  • Resistors 11 and 12 convert the high voltages present in the bridge into a proportional current.
  • the current mirror, mosfets 15 and 16 compares I 1 and I 2 . If I 2 is greater than I 1 the voltage at point A is high. Otherwise this voltage is low.
  • Resistor 12 is chosen smaller than 11 so that under normal operation, when FET 22 turns on, I 2 is greater than I 1 and the voltage at point A is high. During an overcurrent event, the drop across the FET 22, Von, is so great that I 2 is less than I 1 and the voltage a point A stays low.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
EP99120865A 1998-10-30 1999-10-26 Circuit de détection de surintensité et protection à réglage automatique Withdrawn EP0998030A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US183453 1998-10-30
US09/183,453 US6108182A (en) 1998-10-30 1998-10-30 Overcurrent sensing circuit and self adjusting blanking

Publications (1)

Publication Number Publication Date
EP0998030A1 true EP0998030A1 (fr) 2000-05-03

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EP99120865A Withdrawn EP0998030A1 (fr) 1998-10-30 1999-10-26 Circuit de détection de surintensité et protection à réglage automatique

Country Status (5)

Country Link
US (1) US6108182A (fr)
EP (1) EP0998030A1 (fr)
JP (1) JP2000151300A (fr)
CN (1) CN1269632A (fr)
TW (1) TW453022B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108182A (en) * 1998-10-30 2000-08-22 Intersil Corporation Overcurrent sensing circuit and self adjusting blanking
EP1244208A1 (fr) * 2001-03-21 2002-09-25 Pioneer Corporation Amplificateur de puissance
EP2571161A4 (fr) * 2010-05-14 2015-07-15 Panasonic Ip Man Co Ltd Amplificateur

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US5982231A (en) * 1997-07-23 1999-11-09 Linfinity Microelectronics, Inc. Multiple channel class D audio amplifier
US6229389B1 (en) * 1998-11-18 2001-05-08 Intersil Corporation Class D modulator with peak current limit and load impedance sensing circuits
US6570748B2 (en) 2000-07-13 2003-05-27 Sipex Corporation Method and apparatus for indicating an over-current condition
KR100903889B1 (ko) * 2001-06-29 2009-06-19 엔엑스피 비 브이 전류 모드 제어 회로 및 이를 포함하는 스위칭 모드 파워 서플라이
JP5114818B2 (ja) * 2001-08-13 2013-01-09 ヤマハ株式会社 電流検出方法、電流検出回路及び過電流保護回路
US7099135B2 (en) * 2002-11-05 2006-08-29 Semiconductor Components Industries, L.L.C Integrated inrush current limiter circuit and method
US20050088239A1 (en) * 2003-10-23 2005-04-28 Tai Jy-Der D. Short-circuit detecting and protecting circuit for integrated circuit
JP4770292B2 (ja) * 2004-07-02 2011-09-14 ヤマハ株式会社 パルス幅変調増幅器
JP2006050151A (ja) * 2004-08-03 2006-02-16 Pioneer Electronic Corp Ｄ級増幅器
CN100414306C (zh) * 2005-12-05 2008-08-27 华为技术有限公司 一种电流过流告警电路
JP2007166444A (ja) * 2005-12-16 2007-06-28 Nec Electronics Corp 過電流検出回路及びスイッチング回路
TWI325207B (en) 2006-06-06 2010-05-21 Realtek Semiconductor Corp Switching regulator with over current protection and method thereof
EP2092639B1 (fr) * 2006-12-20 2011-09-21 Bang & Olufsen IcePower A/S Limitation réelle du courant
TW200928378A (en) * 2007-12-21 2009-07-01 Tai 1 Microelectronics Corp Overcurrent detection device
CN101470141B (zh) * 2007-12-28 2011-04-06 震一科技股份有限公司 过电流侦测装置
TW201415913A (zh) * 2012-10-08 2014-04-16 Chi Mei Comm Systems Inc 揚聲器系統及其檢測方法
CN103716732A (zh) * 2012-10-09 2014-04-09 深圳富泰宏精密工业有限公司 扬声器系统及其检测方法
US8891218B2 (en) * 2012-10-12 2014-11-18 The Boeing Company Fault tolerant fail-safe link
US8823457B1 (en) 2012-12-17 2014-09-02 Google Inc. Short circuit current protection in an amplifier
JP2016135028A (ja) * 2015-01-20 2016-07-25 株式会社オートネットワーク技術研究所 遮断装置
WO2017104077A1 (fr) * 2015-12-18 2017-06-22 三菱電機株式会社 Circuit d'attaque de dispositif à semi-conducteur
TWI638145B (zh) * 2016-06-27 2018-10-11 友達光電股份有限公司 感測電路及感測電路的控制方法
US10944366B2 (en) * 2019-03-04 2021-03-09 STMicroelectronics (Shenzhen) R&D Co. Ltd Advanced load current monitoring circuit and method for a class-AB amplifier
US11519954B2 (en) 2019-08-27 2022-12-06 Analog Devices International Unlimited Company Apparatus and method to achieve fast-fault detection on power semiconductor devices
CN113497479B (zh) * 2021-09-08 2022-02-01 广东电网有限责任公司计量中心 一种具有滞回特性欠压保护功能的超级电容充放电系统

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US4914542A (en) * 1988-12-27 1990-04-03 Westinghouse Electric Corp. Current limited remote power controller
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US4600891A (en) * 1984-08-21 1986-07-15 Peavey Electronics Corporation Digital audio amplifier having a high power output level and low distortion
US5008586A (en) * 1988-01-29 1991-04-16 Hitachi, Ltd. Solid state current sensing circuit and protection circuit
US4914542A (en) * 1988-12-27 1990-04-03 Westinghouse Electric Corp. Current limited remote power controller
EP0688077A2 (fr) * 1989-05-09 1995-12-20 UNITED TECHNOLOGIES AUTOMOTIVE, Inc. Circuit de puissance débitée avec détection de courant
EP0399754A2 (fr) * 1989-05-22 1990-11-28 Motorola, Inc. Circuit de protection pour un semi-conducteur
EP0402928A2 (fr) * 1989-06-16 1990-12-19 National Semiconductor Corporation Circuit interne pour limiter le courant pour un disjoncteur rapide
US5162669A (en) * 1989-09-25 1992-11-10 Asea Brown Boveri Ltd. Semiconductor switch including a device for measuring a depletion layer temperature of the switch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108182A (en) * 1998-10-30 2000-08-22 Intersil Corporation Overcurrent sensing circuit and self adjusting blanking
EP1244208A1 (fr) * 2001-03-21 2002-09-25 Pioneer Corporation Amplificateur de puissance
US6744310B2 (en) 2001-03-21 2004-06-01 Pioneer Corporation Power amplifying device
EP2571161A4 (fr) * 2010-05-14 2015-07-15 Panasonic Ip Man Co Ltd Amplificateur

Also Published As

Publication number Publication date
CN1269632A (zh) 2000-10-11
TW453022B (en) 2001-09-01
US6108182A (en) 2000-08-22
JP2000151300A (ja) 2000-05-30

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