Classifications

• • C—CHEMISTRY; METALLURGY
  • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
  • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
  • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
  • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
  • C12Q1/6813—Hybridisation assays
  • C12Q1/6816—Hybridisation assays characterised by the detection means
  • C12Q1/6825—Nucleic acid detection involving sensors
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
  • G01N27/28—Electrolytic cell components
  • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
  • G01N27/305—Electrodes, e.g. test electrodes; Half-cells optically transparent or photoresponsive electrodes
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
  • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
  • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
  • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
  • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
  • G01N33/54366—Apparatus specially adapted for solid-phase testing
  • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
  • G01N33/5438—Electrodes

Definitions

• the field of the invention is that of the detection of products, preferably biological (“affins”), such as nucleic acids, or even biopolymers of protein nature.
• the present invention relates, on the one hand, to a method of qualitative and / or quantitative analysis of SBC biological substances, preferably PN polynucleotides present in an LC conductive liquid (solution or gel) medium, via optoelectrochemical measurements and, on the other hand, the affinity devices and sensors intended for the implementation of this process.
• the biological substances, more particularly but not limited to, targeted by the invention are the PN polynucleotides.
• molecules composed of at least two nucleotides oligonucleotides and polynucleotides stricto sensu
• the invention also relates to the compounds which may be involved in immunological coupling reactions [Ag antigen / Ac antibody], or even Enzyme / I / O substitute recognition.
• PN C Complementary PolyNucleotide
• This patent application describes a method for the qualitative and / or quantitative analysis of biological substances, in particular polynucleotides, antigens, antibodies, enzymes, substrates, in which a multilayer structure is used comprising a wafer. semiconductor covered with an insulator, the surface of which is functionalized by one of the species of the pairs of biological substances mentioned above, which are specifically identifiable.
• the semiconductor containing the PN polynucleotides to be assayed or identified is polarized, the variations in the electrical signals induced by a charge effect phenomenon are collected directly and essentially linked to the pairings of the targeted biological substances with their complementary ligands. attached to the insulation, possibly via a sensitive membrane.
• This measurement technique by electrical transduction does not require a reaction intermediary, any more than a specific marker or an enzymatic reaction. It gives satisfaction but nevertheless remains perfectible with regard to the simplicity of implementation and the access to a possibility of carrying out series of rapid measurements. different substrates, without using as many sensors as there are different types of substrates to analyze.
• the charge effect phenomenon can be understood by measuring the electrochemical impedance of a semiconductor / insulator / sensitive membrane / conductive liquid structure.
• the characterization of the field effect due to the variation of the surface charge induced by the pairing can be carried out using a polarized field effect transistor and on which the variations of the grid / source potential induced by the field effect.
• electrochemical or optoelectrochemical transduction means • and on the other hand, electrochemical or optoelectrochemical transduction means.
• US Pat. Nos. 4,591,550 and 5,500,188 disclose a method and a device for determining and dosing one or more substances contained in a gaseous or solid liquid medium and capable of modifying the characteristics of photoresponse of a photosensitive element, comprising means for recognizing said substances.
• the latter involve a revelation mechanism by one or more tracer products capable of modifying the physicochemical characteristics of the analysis medium (pH, redox potential) and / or capable of being demonstrated by a colored or fluorescent radioactive marker.
• the device used in this known method comprises one or more sensors each consisting of a semiconductor wafer (silicon covered with a layer of insulator SiO 2 or silicon nitride), the surface of the latter being optionally functionalized by means for recognizing the substances to be dosed and / or identified.
• This device is also provided with means for biasing the semiconductor / insulator structure (eg circuit for applying a bias voltage, said circuit comprising on the one hand, a counter electrode and a reference electrode and being connected , on the other hand, to the semiconductor / insulator structure).
• the the device further comprises means for irradiating the photosensitive element or elements as well as means for measuring the resulting electrical signals, for detection and / or identification of the substances considered.
• each photosensitive element comprising the semiconductor / insulator structure is necessarily associated with lighting means, polarization means and measurement means. It follows an extreme complexity of the device in its variants aiming at the multidetection of different substances, both in terms of the structure as such and in terms of handling and processing of the resulting measurements and signals. .
• the insulating layer of photosensitive elements according to this prior art is functionalized in the case where the substances to be analyzed are affine systems PN / PNc, E / S, Ag / Ac.
• the recognition ligands functionalizing the insulating layer are systematically labeled. This is illustrated in particular for DNA or RNA analysis, in which the complementary recognition ligands are labeled with biotin (cf.
• the tracer means are e.g. variations in pH or in Redox potential. It must be considered that these means are not the most reliable because there are many factors in the analysis medium, which is for example a conductive liquid, capable of interfering with these parameters, without this being linked to the dosage and identification of the targeted substances.
• the signal measured at the exit of their sensor can be photopotential, photoconductance, photocapacitance or photoinductance, or combinations thereof (column 3, lines 36 and 37-US-A-5,500,188), it is specified lines 41 to 43 column 3 of this same patent that the measured signal is the result of a change of a direct current of an alternating current or of the effect from direct current to alternating current.
• This preference with regard to the taking into account of the photocurrent as a resulting signal also emerges clearly and exclusively from the examples of these US patents, in which either the current necessary to maintain a constant potential between the element is taken into account.
• the inventors have set themselves, in particular, as an essential objective to provide a method for identifying and assaying biological substances, preferably polynucleotides, this method having to integrate in particular the following specifications :
• the inventors have had the merit of highlighting, in a completely surprising and unexpected manner, that the specific pairings between preferably biological molecules and more preferably still between complementary polynucleotide strands , induce a modification of the surface electric charge in a multilayer structure, semi-conductor Sc / insulator Is surface-functionalized. This modification occurs more precisely at the interface with a conductive liquid medium LC, said charging effect constituting the basic identification and metering signal, perceived directly or indirectly by optoelectrochemical transduction means.
• Such an optoelectrochemical transduction measurement mode meets the desired specifications of simplicity, sensitivity, specificity, reliability and reproducibility.
• the technique according to the invention also has the advantage of being reversible. Indeed, one can easily carry out the mismatching of the complementary species which reacted specifically at the level of the sensitive membrane of the semiconductor structure. The sensitive membrane can thus be regenerated after each use and this multiple times.
• the SBCs are PN polynucleotides and the SBRs are PNc polynucleotides.
• the present invention makes it possible to envisage, in particular, the recognition of nucleotide sequences, for example with a view to the detection of genetic diseases, the detection and characterization of viruses, bacteria and parasites or for the establishment of genetic maps, the study of gene expression and / or mutation.
• nucleotide hybridization it is possible to exploit other specific apartments such as, for example, the biochemical mechanisms of immunological coupling, or even enzyme / substrate complexation, provided that the pairing causes a variation of electrical charges on the surface. of Is.
• the principle of analysis which governs the process according to the invention is exclusively optoelectric or optoelectrochemical. This means that we are dealing with an affine biochemical recognition, that is to say one which does not involve chemical or enzymatic reactions and which takes place without the production or consumption of intermediate chemical species.
• the revelation of this affine biochemical recognition is not done through an indirect detection using physicochemical means of revelation: colored tracers, fluorescent, radioactive, redox potentials, pH.
• biochemical recognition takes place essentially, or even exclusively, by an optoelectronic transduction underlying the polarization of the Sc / Is structure relative to LC, as well as the periodic illumination of said structure.
• the expression “electrically charged” means that during the affine interaction of PN C with PN, the electrical surface charge is modified.
• the first step - a - of the method according to the invention consists in exclusively using So probes, in particular unmarked PNc, that is to say not carrying physicochemical revealing means (fluorescence, colorimetry, radioactivity , redox potential, pH).
• the potential of flat bands Vbp is the potential that must be applied to the semiconductor with respect to the LC (electrolyte) medium in contact with the dielectric Is to obtain a zero curvature of the bands of the Se.
• the modification of the surface charge corresponds to a variation of Vbp, which is itself a signature of the PN / PNc hybridization.
• step b of the method according to the invention it is appropriate, in accordance with step b of the method according to the invention, to create an initial curvature of the Se, by adjusting firmness levels of Se and of the LC medium, preferably by imposing a DC bias voltage Vp on the structure Sc Is - PNc, with respect to the LC medium.
• the adjustment of the Fermi level of the semiconductor Se substantially to its intrinsic level at the surface takes place by imposing a bias voltage Vp to Se with respect to at the LC, according to a scan between a negative voltage and a positive limit voltage, chosen so that the Fermi level of the Se passes through its intrinsic level at the surface, Vp thus evolving advantageously in a voltage range corresponding to the desertion regime and weak inversion of Se.
• This continuous polarization is associated, on the one hand with the periodic illumination according to step c and on the other hand, with a measurement of the variations of Vbp according to step d.
• This measurement is carried out as follows:> collection of the photopotential (Vph) at the terminals of the Se (between Se and LC) and / or of the photocurrent (Iph) calculation of the optoelectrochemical impedances in the Zop phase and / or in quadrature Zoq for each value of Vp ,
• the Zop and Zoq optoelectrochemical impedances provide access to the energy properties of the Sc / Is-So structure as well as of its interfacial zone with the LC, and in particular to the various charge effects which may occur at the interfaces.
• These optoelectrochemical impedances Zop and Zoq are linked to the photopotential Vph and to the current Ihv, generated following the periodic light excitation of Se, moreover subjected to a continuous polarization. Indeed, the modulated illumination - c - of Se by photons of energy greater than or equal to the width of its forbidden band, generates electron-hole pairs, charge carriers.
• Vph and / or Iph and / or the impedimetric components Zop and / or Zoq are transfer functions connecting Vph to Ihv induced by the modulated illumination. More precisely, the optoelectrochemical impedances Zop and Zoq of the region of the space charge zone of Se are directly proportional to the effective values of the components in phase and in quadrature of the Vph measured. The proportionality coefficient depends on the intensity or power, of the illumination.
• the photopotential is therefore the image of the opto-electrochemical impedance of the structure.
• the illumination is not only low but also substantially sinusoidal.
• - weak illumination is an illumination which leads to a second order perturbation of the structure with respect to the thermodynamic equilibrium in darkness. It is preferably less than or equal to 10 ⁇ W / cm 2 and preferably 1 ⁇ W / cm 2 .
• the strong illumination is an illumination which strongly disturbs the thermodynamic balance of the structure in the dark. It is preferably greater than 10 ⁇ W / cm 2 .
• the imposed potential Vpi is close to the potential corresponding to the inflection point of the sigmoidal curve of the photopotential Vph, the photocurrent Iph or the quadrature optoelectrochemical impedance Zoq as a function of the polarization potential Vp.
• the term "vicinity" of the Fermi level relative to the intrinsic surface level of the Se is understood to mean the position close to the middle of the forbidden band of the semiconductor on its surface in contact with the insulator Is, in a range such that the semiconductor is on the surface in a situation of desertion or weak inversion, so that the photopotential Vph, and / or the photocurrent Iph, and / or the optoelectrochemical impedance in quadrature Zoq varies a lot with the polarization potential Vp.
• Vpi corresponding approximately to the potential of the inflection point must be understood, according to the invention, by an uncertainty range of ⁇ 0.5 Volt.
• the reference is in practice given by the maximum value that Vph, Iph or Zoq reaches in each of the characteristic sigmoidal curves.
• Vph max, Iph max and Zoq max correspond in other words to the maximum value of photopotential, photocurrent and optoelectrochemical impedance in quadrature, respectively, when the semiconductor is in a strong inversion regime.
• Variant (i) can be used in the case of a moderate variation in Vbp making it possible to establish a simple relationship (linear for example) between ⁇ Vph and ⁇ Vbp. In practice, it is preferable to use variant (ii) of step d according to the second embodiment of the method according to the invention.
• Vph max / 2 is kept constant by adjusting the polarization Vp of the structure, preferably by electronic regulation.
• the regulation ⁇ Vp corresponds to the ⁇ Vbp that one seeks to measure.
• the electronic regulation that can be implemented in the context of variant (ii) taking into account ⁇ Vp, is carried out as follows:
• this signal is possibly rectified so as to have a continuous signal v'ph,
• Vph designates both the primary photopotential v ph measured between Se and LC as v ' ph corresponding to vph rectified and possibly amplified.
• step cd 'illumination which is common to the two modes of implementation mentioned above, it should be specified that said illumination can be carried out opposite any zone of the external faces of the structure
• the periodic illumination of the structure Sc / Is is therefore carried out either opposite the external face or faces of the Se, or opposite the external face or faces of the insulator Is, or opposite all the external faces of the structure.
• the wavelength of the illumination ⁇ of such is chosen.
• E band gap energy preferably between 100 and 3000 nm, E being the band gap energy of Se expressed in electronvolts.
• This threshold ⁇ 0 is a function of the nature of the semiconductor. According to a third embodiment of the method according to the invention, it is possible to radically eliminate non-specific responses, by implementing a differential measurement, according to which, at least one other structure Sc is involved in the affinity sensor. / Is of reference, in which Is is not functionalized by So, and by following the difference between the Vbp measured by the 2 sensors, as well as the variation of this difference.
• the measurement Sc / Is-So structure and the reference Sc / Is structure are brought into contact with the same LC medium. They are polarized in the same way, preferably by means of the same counter-electrode, a reference electrode not being necessary. Finally, in accordance with step c, they are subjected to the same illumination of modulated light. Furthermore, the means of interpretation of the collected signals used in step d are chosen so as to allow the difference between the flat band potentials VbpO and Vbpl specific to the two structures Sc / Is and Sc / Ts to be monitored. - So, respectively.
• This arrangement makes it possible to obtain a very precise and continuous measurement of the variation of the Vbpl of the functionalized Sc / Is-So structure, by eliminating the parasitic phenomena which may appear and which are linked to parameters other than the pairing. and, in particular, that PN / PNc hybridization.
• a fourth embodiment of the method according to the invention is characterized in that, in a prior step ao, different areas of the surface of an insulating layer Is of the same structure Sc / Is are functionalized, by several So probes different by the nature of the PNc which compose them, and we then carry out using this structure the LC analysis containing one or different PN substrates: - by successive illuminations of the areas of the surface of the Is, said zones each being functionalized by the same So (identical PNc), the nature of the So varying from one zone to another, - and by collecting and interpreting ⁇ Vbp.
• This fourth mode of implementation corresponds to the multidetection of substrates, in particular of PN, of different natures, in the field of genetics.
• the multidetection according to the invention makes it possible to access methods of simple and rapid detection of viral diseases and genetic diseases. It is also possible to carry out tissue compatibility checks, as well as maps of heterogeneous populations of polynucleotides, for example genomes. It is also a tool for studying gene mutation, gene expression, or genomic sequencing.
• the advantage of multidetection according to this fourth mode of implementation lies in the methodological and structural simplicity of the corresponding method and device.
• step of direct or indirect measurement of ⁇ Vbp can be carried out in accordance with the procedure described for the first mode of implementation in one or other of these variants with low or high illumination, as well as according to the procedure specific to the second mode of implementation, whatever the variant (i ) or (ii) retained.
• the invention is not limited to these four modes of implementation, but it also encompasses all possible measurement methods and the like, based on the recognition of the variation in the potential of flat bands ( ⁇ Vbp). of an Sc / Is-So structure having a sensitive zone made of So probes based on biological substances of SBR recognition (eg PNc) capable of reacting specifically with electrically charged biological substances SBC (eg PN) in an LC medium .
• SBR recognition eg PNc
• SBC electrically charged biological substances
• the substrates to be analyzed are PNs, preferably chosen from the following list: nucleotides, oligonucleotides, polynucleotides, nucleic acids (DNA or RNA) as well as the analogs and mixtures of said substrates.
• the So probes used in the method are specific recognition means, in particular unmarked PNc, that is to say not carrying means for revealing the PN / pairing.
• PNc fluorescence, colorimetry, radioactivity
• RNA DNA, gene, plasmid or any other genetic material
• antigen-antibody hapten-antibody
• cDNA / DNA cRNA / RNA
• poly dT-mRNA eukaryote
• lectin glycoconjugate marker for cells (or microorganisms) - cells (or microorganism)
• HcG- tissue receptor eukaryote
• T3 - TGB thyroxin binding protein
• the method according to the invention firstly involves the immobilization of at least one type of these reactive PNc biological species to constitute the So probes. This can be done directly on the insulating layer or using an intermediate material (spacing compounds for example), attached to the Is insulation and capable of receiving by physical connection (eg adsorption-absorption) and / or chemical (eg covalent bond), the specific biological ligands PNc. According to the invention, it is perfectly conceivable to provide one of the heterospecific So probes, formed from PNc biological species of different natures, capable of reacting with their complement.
• the LC conductive liquid medium used can be any buffer solution compatible with the biological substances considered PN.
• This LC liquid medium advantageously has a conductivity equivalent to that of an aqueous NaCl solution having a concentration ranging from 0.005M to 3M and preferably of the order of 0.1 M.
• the pH of the liquid medium can be between 0 and 12, preferably between 6 and 8 so as to favor the apartments by bioaffinity.
• the stringency of the liquid medium can also be adjusted to promote hybridization.
• Non-specific interactions by ion exchange or by hydrophobic interactions, can be eliminated in whole or in part using buffer of appropriate ionic strength, (e.g. Tris-HCl / Tris-base).
• buffer of appropriate ionic strength e.g. Tris-HCl / Tris-base.
• the measurement temperature can be between 0 and 50 ° C. It is more precisely controlled so as to favor the biochemical reactions concerned.
• the present invention also relates to a device for implementing the method as described above, said device being characterized in that it comprises: - at least one affinity sensor formed by at least one structure
• the So probe (s) comprise SBR ligands capable of specifically hybridizing with the biological substances SBC to be analyzed, contained in the conductive liquid medium LC, by causing a charge effect phenomenon, at l origin of ⁇ V bp of Se,
• this device therefore includes
• the measurements of the photopotential Vph and / or of the optoelectrochemical impedances in phase Zop and / or in quadrature Zoq are carried out in an open circuit configuration, that is to say that the measurement circuit must comprise a very high charge impedance.
• the Iph photocurrent measurements are advantageously carried out in a closed circuit configuration (short circuit).
• this device benefits from a low cost price. It can be easily produced on an industrial scale and offers high reliability and good reproducibility of measurement.
• the measuring electrode (that is to say the multilayer structure Sc / Is-So) of the affinity sensor of the device, is formed by at least one Se plate, preferably in silicon, covered on one of its faces with at least one layer Is of insulator, preferably silica, on the surface of which are fixed at least one sensitive So probe comprising at least one biospecific pairing ligand, preferably PNc polynucleotides for specific recognition by hybridization, this sensor also comprising at least one ohmic contact allowing the connection of the Sc / Is-So structure, in particular, with the polarization means and / or the Vph measurement means.
• the device further comprises this Sc / Is-So structure, at least one auxiliary electrode, possibly provided on the Is layer of the Sc / Is-So structure.
• the layer of dielectric material blocking Is is for example, a layer of oxide and / or nitride or any other mineral or organic material of small thickness, preventing or limiting faradaic phenomena.
• This structure is associated with a conductive liquid medium containing the SBC substances to be measured to detect or identify LC.
• the silicon chosen as semiconductor is of the n or p type, moderately doped, preferably up to 10 15 to 10 19 c ⁇ r 3 , preferably 10 16 cm ′ 3 .
• the thickness of the silicon wafer is, for example, between 0.01 and 2 mm.
• the insulating layer Is advantageously consists of silica or silicon nitride. Its function is to annihilate possible faradaic processes which could disturb the measurements, by means of parasitic electrical signals. This layer Is also makes it possible to avoid the difficulties associated with possible corrosion of the semiconductor material by the conductive medium LC in contact.
• the thickness of this layer Is is between 1 and 500 nanometers, preferably between 1 and 50, and more preferably still is of the order of 10 nanometers.
• the dielectric layer Is supports the So PNc probes, which constitute what could be called bio-receptive membrane in contact with the LC medium.
• FIG. 1 is a schematic representation of the device for qualitative and / or quantitative analysis of biological substances, preferably PN polynucleotides present in a conductive liquid medium LC, according to the invention.
• FIGS. 2 and 3 are views in right cross section, of alternative embodiments of the affinity sensor shown in Figure 1.
• FIG. 4 shows the diagram of the electrical circuit for measuring the optoelectrochemical impedances Zop, Zoq of the affinity sensor according to the invention, in accordance with the first embodiment of the method, in its low-light variant.
• FIG. 5 shows the block diagram of a particular embodiment of the measuring device according to the invention corresponding to variant ii of the second embodiment of the method according to the invention.
• - Figure 6 is a schematic representation in right cross section of an embodiment of the device according to the invention, namely the differential sensor corresponding to the third embodiment of the method.
• - Figure 9 corresponds to the impedance curves obtained at each stage of development of an active functionalized structure for the recognition of single strands of DNA.
• Figure 1 shows the device according to the invention which comprises an affinity sensor 1 formed by a structure 7 Sc / Is-So in contact, by its face supporting the So, with a conductive liquid medium LC, designated by the reference 2
• This device also includes polarization means 3, lighting means 4, means 5 for measuring Vph, and a unit 6 for calculation and control comprising means for transforming the signals collected into a variation of Vbp and means calculation and interpretation of ⁇ Vbp in terms of identification and / or dosage of electrically charged biological substances to be analyzed, also designated SBC.
• the affinity sensor 1 is constituted by a structure 7 Sc / Is-So, itself formed by a silicon wafer 7.1, a layer of insulator Is made of silica 7.2 and So probes designated by the reference 7.3, fixed on the surface of Is 7.2 insulation to functionalize it. According to a variant, it is possible to deposit optionally on the surface, a functional layer allowing better attachment of the So probes.
• the affinity sensor 1 is provided on its external face opposite to that carrying the So 7.3 probes, with an ohmic contact 8 connected to the polarization means 3.
• the contact ohmic 8 is isolated from the LC 2 medium by means of a peripheral seal 8 j . The latter cooperates by sealed contact with an insulating support 8 2 on which the sensor 1 rests.
• these probes are constituted by Biological Substances of Specific Recognition (SBR) of SBCs.
• the SBCs and the SBRs are PN and PNc polynucleotides.
• a reference electrode 9 and a counter electrode 10 also bathe within the medium 2 conductor LC with the affinity sensor 1. These two electrodes 9 and 10 are connected to the polarization means 3.
• a high load resistance is provided in the potentiostatic measurement circuit.
• this high resistance R L is inserted in the connection connecting the counter-electrode to the biasing means 3.
• the resistance R L is preferably greater than 100 k ⁇ , preferably 50 M ⁇ and more preferably still is of the order 100 M ⁇ .
• Figures 2 and 3 each show an alternative embodiment of the affinity sensor 1 in which the structure 7 constitutes the bottom of a measurement cell comprising walls l j and a seal 1 2 ensuring the seal between the bottom 7 and said walls l t .
• the variant of Figure 2 differs from that of Figure 3 in that the sensitive area comprising the So 7 probes 3 is delimited in the first whereas it is not in the second (the entire surface of FIS comprises So 7 probes 3 ).
• the biasing means 3 of the device according to the invention are preferably constituted by an adapted potentiostat, for example having a strong time constant (greater than 1 s). It allows the polarization of the structure while not disturbing the photopotential Vph.
• the lighting means 4 comprise at least one light source, in this case one, arranged
• the light beam passes through an acousto-optical modulator (not shown in Fig.l) the controller of which is controlled by a low-frequency generator, designated by the reference 4.1 in Fig.l.
• a filter makes it possible to adjust the light power to values lower, equal or greater, at the threshold determining the ranges of low illumination and of high illumination.
• the light power is of the order of or less than or equal to 1 ⁇ W / cm 2 for the conditions of poor lighting and greater than 10 ⁇ W / cm 2 for the strong lighting.
• the means 5 for measuring Vph are, in practice, constituted, for example, by an impedance adapter having an input impedance between 10 8 ⁇ and 10 12 ⁇ , more preferably of the order of 10 10 ⁇ .
• the measuring means 5 also include a synchronous detection member controlled by the low frequency generator 4.1. which, as we have seen above, also determines the modulation of the illumination. This synchronous detection device gives the phase and quadrature components of Vph.
• the microcomputer 6 comprises the means for transforming the signals collected into a variation of Vbp as well as the means of calculation and interpretation ⁇ Vbp, in terms of identification and / or determination of the biological substances in the case of PN polynucleotides.
• the optoelectrochemical impedances Zop and Zoq are the transfer functions connecting Vph to the intensity of the illumination.
• the effect of the illumination can be represented by a current generator in parallel with the space charge region whose impedance, denoted Zsc, includes the parameters linked to the surface.
• Zd is the impedance of the dielectric. It can be represented by pure capacitance.
• R el and R e2 are the impedances of the electrolytic solution, respectively, between the working electrode and the reference electrode, and between the reference electrode and the counter electrode.
• Zp is the internal resistance of the potentiostat.
• R L is the load resistance introduced into the potentiostatic measurement circuit. Its role is to confer on the measurement circuit the properties of an almost open circuit with respect to the photopotential, while allowing the polarization of the structure; its value must therefore be high enough compared to the other impedances involved in the measurement.
• Vph is the measured photopotential and W l is the photopotential which appears across the semiconductor. According to the electrical diagram, the total current Ihv generated by the illumination has two components: I l which crosses the semiconductor and I 2 which circulates in the measurement circuit. We can then write the following relationships:
• phase and quadrature optoelectrochemical impedances of the region of the space charge area of the semiconductor are directly proportional to the components of the photopotential measured: the proportionality coefficient depends on the intensity of the illumination.
• the measurement of optoelectrochemical impedances can therefore be used for the detection of the apartment process, in particular of PN / PNc hybridization, which process is the quantitative and qualitative reflection of the SBCs (PN) to be analyzed.
• Examples 1 and 2 below illustrate the low-light variant of the first embodiment of the method according to the invention.
• the highly illuminating variant of this first mode consists in accessing the variations of the flat band potential Vbp of the Se, consecutive to the phenomenon of biological recognition, via the effective value of Vph (or according to a variant of Iph).
• the modulated illumination - preferably at low frequency - which can be used is not necessarily sinusoidal, but can simply be periodic.
• the surface charge varies with the presence of the target species PN in the LC medium designated by the reference 2
• this results in a ⁇ Vbp which results in a sliding of the curve of the effective value of Vph, parallel to the axis of the polarization potentials of the structure.
• Example 3 below illustrates this highly illuminating variant of the first embodiment of the method of the invention, using the appropriate device.
• the structure Sc / Is-So is polarized, so that the level of firmness of the Se is in the vicinity of the intrinsic position at the surface of the Se.
• the potential Vp then imposed is close to the potential corresponding to the inflection point of the sigmoidal curve of the effective value of Vph, Iph or Zoq.
• Vph Vphi by playing on the initial continuous pola ⁇ sation, which will be a set value Vpi.
• the effective value is then kept constant Vphi, Iphi or Zoqi, by adjusting Vp with respect to the setpoint Vpi of the structure, by means of electronic regulation. This polarization adjustment is directly the image of ⁇ Vbp.
• the effective values of Vph, Iph and Zoq are
• Vph. max Iph. max Zoq. max ⁇ wererespectively -, -, - i . They each represent substantially the ordinate of the point of inflection of the corresponding curve.
• Example 4 illustrates the second mode of implementation without much light in variant (ii).
• FIG. 5 shows the block diagram of an example of this particular embodiment of the device according to the invention.
• Vph is chosen as the tracer signal.
• the photopotential vph is detected at the terminals of the affinity sensor 1 (measuring cell) by means of an adapter impedance 14 having a high input impedance so as not to disturb the structure.
• the signal is then amplified by means of a low frequency alternating amplifier 15, transformed into a continuous signal v'ph thanks to a synchronous detection 5 and to an RC circuit 16 which makes it possible to reduce the noise and to stabilize the regulation.
• the continuous signal v'ph is amplified by means of a continuous amplifier 17, with gain G 17 .
• Gl is the gain of all amplifiers 15 and 17 and synchronous detection 5.
• the amplified continuous signal v'ph is then compared to a reference signal U using a differential amplifier 18.
• U is adjusted to the value of Vpi which gives the photopotential a value half of the photopotential corresponding to the strong inversion (Vph.max / 2).
• the difference in residual value ⁇ (v'ph-U) of these two signals is amplified by the differential amplifier 18 of gain G2 and the output voltage ⁇ (v'ph- U) is applied to structure 1 at the same time that the continuous polarization Vp imposed by a voltage generator 19 coupled to a summator 20.
• a low frequency signal generator 4.1 A low frequency signal generator 4.1.
• BF allows, after amplification using an amplifier 2.1., To control the diode 4 whose beam excites the structure 1 and also to reference the synchronous detection 5.
• the advantage of such an arrangement is that the electronically imposed potential is directly and linearly the image of the variations of the potential of flat bands Vbp, caused by the interactions at the surface of the dielectric. It is therefore independent of the properties of the structure and makes it possible to obtain good sensitivity and excellent reproducibility.
• the cell (sensor) is similar to that described above with reference to FIG. 1.
• the measurement of the photopotential being carried out by means of a measurement circuit having a high input impedance, it is possible to admit an ohmic contact of poor quality.
• an electrode with a constant potential relative to the solution is required.
• a reference pseudo-electrode constituted by a noble metal such as platinum, for example.
• the electrode can be independent or be produced by deposition, in the form of a grid or an external ring, on the surface of the dielectric so as to satisfy the miniaturization of the sensor.
• the illumination of the structure can be obtained by means of a laser diode or a light-emitting diode emitting in the wavelength range of visible or very near infrared, between 400 and 1000 nm with a light power. of the order of 0.1 ⁇ W at 100 m / cm 2 .
• the impedance adapter 14 is replaced by a current / voltage converter.
• Fig. 1 and 5 described above are arbitrarily called GENOPTEL.
• said device is characterized in that the affinity sensor comprises at least one Sc / Is-So structure and at minus a reference structure Sc / Is not functionalized by So, so as to be able to carry out a differential measurement.
• This embodiment which will be called DIGENOPT is represented in FIG. 6. It corresponds to the case where there is an affinity sensor 1 or measurement cell advantageously comprising two almost identical Sc / Is structures 31 and 32, one being functionalized by So, the other not. These two structures (or electrodes) are brought into contact with the same medium 2 LC and are polarized by means of the same counter-electrode 33. A reference electrode is not necessary.
• the two Sc / Is structures 31 and 32 are each mounted at the tip of an element 36 which can be screwed into the body 35 of the sensor 1.
• the body 35 comprises a cavity closed laterally by the electrodes 31 and 32, containing the medium LC - 2 -. Seals 37 are provided to seal between the different walls.
• the top wall receives the lighting means 4 and 34.
• the bottom is crossed by the counter-electrode 33.
• the affinity sensor comprises at least one structure Sc / Is-So, in which the So probes are of different natures, the So probes of the same kind being grouped in the same zone of the Is layer, each zone being circumscribed in relation to the others so as to be able to be illuminated separately partially or entirely by the lighting means.
• This embodiment arbitrarily designated by the expression GENMAP was made possible due to the fact that the principle of the measurement according to the invention is such that the photopotential and / or the photocurrent depends on the light flux but is practically independent to make the surface lit.
• Multi-zone reading by the lighting means provides access to the local flat band potential of each specifically functionalized zone: - either by measuring the optoelectrochemical impedance according to the first mode of implementation - low or high lighting variant,
• the acquisition of Vbp can be carried out according to any of the modes of implementing the method according to the invention.
• FIG. 7 is a block diagram of the multisensor structure Sc / Is-So ! at So n .
• the same references were used as in FIG. 1 to designate the lighting means 4, the probes S ⁇ j to So n identified by the reference 7.3, the layer Is 7.2. and the semiconductor wafer referenced by
• This type of device opens the way to many and varied applications in the field of genetics: detection of viral diseases, and genetic diseases, verification of cell compatibility, creation of genome maps, expression or mutation of genes, etc.
• the invention also relates to the affinity sensors, that is to say the measurement Sc / Is-So and reference Sc / Is structures, as described above.
• the device used in this example corresponds to that shown in Fig.l.
• the Sc / Is structure includes:
• a semiconductor having a thickness of 0.03 mm is p-doped silicon at a height of approximately 10 15 cm- 3 , with an Au / Cr layer on the rear side ensuring ohmic contact.
• an insulator Is is silica with a thickness of 10 nm obtained by thermal oxidation.
• LIQUID LC MEDIUM TRIS lM BUFFER SOLUTION. This buffer solution of pH 7.1 is composed of 10 mM TrisHCl
• the light power is 0.6 ⁇ W / cm 2 1.4.
• Figure 8 attached shows the optoelectrochemical impedance curves Zop and Zoq as a function of Vp obtained for the structure described above.
• the quadrature impedance is due to the capacity of the space charge area of the semiconductor, which is directly linked to the doping of the semiconductor.
• the quadrature impedance is very low because the semiconductor is in an accumulation situation and the capacity of the space charge zone is very high.
• the semiconductor passes successively from the inversion situation, to desertion, then to accumulation, when the polarization increases.
• the impedance in phase presents a peak in the intermediate domain. This peak is due to the presence of interface states located between the semiconductor and the oxide layer.
• the optoelectrochemical impedances give the energy information on the semiconductor and on the states of semiconductor surface but does not provide information on the dielectric layer. However, they make it possible to determine the potential of flat strips of the semiconductor.
• the value of the flat strip potential is correlated to the position of the quadrature impedance curve with respect to the potential axis. This is the parameter that characterizes the surface load of the structure.
• the DEVICE including the Sc / Is structure and the conductive medium
• LC are the same as in Example 1, with the difference that the Sc / Is structure is functionalized by So probes constituted by PNc nucleotides complementary to PN target species contained in LC.
• a polymeric layer of APTS (AminoPropylTriethoxySilane) is deposited.
• the strands of oligonucleotides (dT) are grafted onto the surface by bromination: this method makes it possible to fix the nucleotide to the APTS without using the sites involved in the hybridization.
• hybridization is obtained after having left the structure in contact with a solution containing complementary strands poly (dA) to those fixed on the surface.
• Figure 9 corresponds to the impedance curves obtained at each stage of the development of a functionalized active structure for the recognition of single strands of DNA.
• the curves in FIG. 9 show the displacement linked to the hybridization of the complementary PNc / PN DNA strands.
• EXAMPLE 3 ANALYSIS OF POLYNUCLEOTIDES (PN) USING THE DEVICE ACCORDING TO THE INVENTION (FLG 1) - 1st METHOD OF IMPLEMENTING THE PROCEDURE - HIGHLY ILLUMINATED VARIANT
• the DEVICE The device used is that described in Figure 5.
• the measurement cell and the affinity sensor are those shown in Figure 2.
• the modulated light is supplied by means of a light-emitting diode; the light power used is 10 mW / cm 2 .
• the LC conductive liquid is an aqueous solution of 10 M tris (hydromethyl) aminomethane hydrochloride (Sigma) and 50 mM NaCl; the whole solution is at pH 7.1. The measurement is made at room temperature, i.e. 22 ° C, in the dark.
• the Sc / Is-So structure is as described in the previous examples.
• the probes are PNc, and more precisely oligos dT of 20 bases, deposited on the zone as represented in 7.3 of FIG. 2 from a solution composed of 20 ⁇ l of aqueous solution of n-bromosuccinimide in a concentration of 0.01 M added to 1 ml of 1M aqueous NaHCO 3 solution containing oligos (dT) 20 in a concentration of 1 mg / ml.
• the structure is left overnight in contact with the Pnc solution, then thoroughly rinsed with the LC liquid, then mounted on the measuring cell. This cell is then filled with LC and the measurement chain initialized.
• Figure 11 gives the response in ⁇ Vp over time of the functionalized structure Sc / Is-So where the probes are oligo dT.
• Curve A corresponds to the response obtained when the sensor is in contact with an LC solution to which targets (polynucleotides dC in concentration of 1 ⁇ g / ml) have been added which are not complementary to the probes fixed on the sensor.
• Curve B corresponds to the response obtained when the sensor is in contact with an LC solution to which targets (polynucleotides dA in concentration of 1 ⁇ g / ml) complementary to the probes fixed on the sensor have been added.

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