EP0983613A1 - Thyristor a auto protection - Google Patents

Thyristor a auto protection

Info

Publication number
EP0983613A1
EP0983613A1 EP98924147A EP98924147A EP0983613A1 EP 0983613 A1 EP0983613 A1 EP 0983613A1 EP 98924147 A EP98924147 A EP 98924147A EP 98924147 A EP98924147 A EP 98924147A EP 0983613 A1 EP0983613 A1 EP 0983613A1
Authority
EP
European Patent Office
Prior art keywords
mosfet
thyristor
series
gate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98924147A
Other languages
German (de)
English (en)
Inventor
Rainer Constapel
Heinrich Schlangenotto
Shuming Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Semiconductor GmbH
Original Assignee
Vishay Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor GmbH filed Critical Vishay Semiconductor GmbH
Publication of EP0983613A1 publication Critical patent/EP0983613A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Definitions

  • the invention relates to a thyristor with self-protection according to the preamble of claim 1
  • thyristors are normally used in the high-performance range, protective measures in the event of a short circuit are very important. Normally, thyristors are switched off by external passive fuses in the event of an overload. These and other methods are complex because of the external circuitry, also in terms of space requirements and relatively expensive
  • self-protection means a protective function against overcurrent and overtemperature integrated into the thyristor.
  • protective measures have sometimes been implemented with hybrid arrangements, which are complicated and expensive. They require a lot of space and are also due to the Microscopic connections disadvantageous Tny ⁇ store ⁇ with integrated overcurrent and overtemperature protection are not yet known
  • the invention is based on the object of providing a quickly responding and easily implemented overload and overtemperature protection for MOS-fired thyristors.
  • the essence of the invention is that in a MOS thyristor ⁇ e 'a controlled by a Se ⁇ en MOSFET between Gaie and Source ⁇ es series MOSFET an additional MOSFET is arranged, which in turn is controlled ⁇ urcn ⁇ ie drain-source voltage of the series MOSFET and the , Series MOSFET switches off when a certain voltage is exceeded. For this reason, the component receives an I-U characteristic in which the current not only strives for a saturation value with increasing voltage but also clearly accepts it from an adjustable voltage
  • MOS-Tny ⁇ stor ig 2 the associated circuit diagram ig 3a the current through the MOSFET M1 as a function of the dram source voltage U M. with the temperature as parameter ig 3b, the current-voltage characteristic for two different series resistors R g ig 4, a MOS thyristor with 5 layers of alternately opposite conduction types
  • FIG. 5 shows an embodiment with 4 vertically superimposed layers of alternately opposite conduction types.
  • FIG. 6 shows a lateral embodiment and manufactured using SOI technology
  • the mode of operation of the component according to the invention is to be understood as follows.
  • a MOS thyristor with a MOSFET M1 in series with the thyristor, which is controlled by an external gate a further MOSFET M4 is integrated, which lies between the gate and source of the series MOSFET and whose gate is connected to the drain contact of the serial MOSFET.
  • the MOSFET M4 is thus controlled by the drain-source voltage of the series MOSFET M1
  • the MOSFET M4 switches on.
  • the gate of M1 which is connected to the gate voltage source via a series resistor, is discharged. and the gate voltage of M1 decreases. The current through the entire component is thus reduced.
  • the drain-source voltage of the series MOSFET M1 is therefore used as the sensor signal for the overcurrent
  • FIG. 1 shows the application of the invention to a cascode-connected MOS thyristor according to the application DE 196 27 122 A1.
  • the MOSFET M4 is added (see also FIG. 2).
  • the MOSFETs are n-channel MOSFETs of the enhancement type
  • the source region S4 of M4 is connected to the outer cathode terminal KA, which leads to the source region S1 of the series MOSFET M1.
  • the drain region D4 of M4 is connected to the Gate electrode G1 of M1 connected between the outer gate terminal G1 or the drain of M4, a series resistor R g is arranged.
  • the gate of M4 is connected to the drain of M1 via the floating emitter contact FE, so that the MOSFET M4 is connected to the drain-source voltage of the Series MOSFETs M1 is controlled
  • FIG. 2 shows the circuit diagram of the component according to FIG. 1.
  • the MOSFET M1 in series, the switch-off MOSFET M2, the switch-on MOSFET M3 and the protective MOSFET M4 are shown in their electrical assignment.
  • the operation of the MOSFETs has already been described
  • the equivalent diagram in FIG. 2 applies exactly only to the arrangement shown in FIG. 1.
  • the circuit diagram has to be modified — albeit insignificantly Source of the Se ⁇ en-MOSFET is
  • the voltage at the component is made up of the thyristor voltage Un. between the anode connection AA and the floating cathode FE on the one hand and the voltage U M ⁇ at the Se ⁇ en-MOSFET M1 between FE and the outer cathode KA on the other hand
  • UM exceeds. the threshold voltage of the MOSFET M4, so that the MOSFET M4 switches on.
  • the structure according to the invention also offers protection against excessively high temperatures Because of the series connection of the main thyristor and the MOSFET M1, the associated voltage drops, as already mentioned, add to the anode voltage in the switched-on state
  • the voltage drop (drain-source voltage) U MI via M1 increases with the temperature at a constant current, as can be seen from FIG. 3a .
  • the voltage drop U M. at 25 ° C, for example, at a certain current l .
  • U1 0.6 V (point 1 in Fig. 3a)
  • the voltage drop increases to 1 35 V (see point 2).
  • Threshold voltage of NMOS transistors decreases with increasing temperature If the potential FE exceeds the threshold voltage of M4, M4 turns on. This discharges the gate G1 of M1 and reduces the gate bias of M1.
  • the voltage U max at which the current value reaches its maximum value is set by the user according to his wishes by selecting the series resistor R g .
  • a small resistor R g means a large maximum value of the current, a large value of the resistor R g makes the maximum value small This fact is illustrated by FIG. 3b.
  • the resistance R g can be a normal ohmic resistance, but preferably a channel of a MOSFET that can be set in the resistance will be used
  • the MÜSFET M4 does not need to be present in every unit cell but is expediently arranged in a separate area of the component of the component. Since it only has to carry a small current to discharge the gate of the series MOSFET, the area requirement is low.
  • An advantage of the example shown in FIG. 1 The component is that the MOSFET M4 can be produced simultaneously with the MOSFETs M1 and M2 without additional process steps
  • FIG. 4 shows another example of a MOS-controlled thyristor with integrated U-current protection.
  • the MOS thyristor itself has a cascode configuration (see patent specification DE 44 02 877 C2).
  • the transistor structure 1, 3, 4, 5 contains a PMOSFET M1 in the n-emitter zone 5, the source region S1 of which is connected to the n-emitter zone 5 of the thyristor by a float contact FK and the drain region D1 of which is connected to the outer cathode KA.
  • the MOSFET M1 is therefore in series with the thyristor.
  • the source region S2 of which is formed by the surface region of the p-base zone 4 of the thyristor, while the DraingeDiet D2 coincides with the drain region D1 of the MOSFET M1 ⁇ en MOSFET M2 is thus the p-base 4 of the thyristor with the outer cathode KA in connection
  • a MOSFET M4 is now integrated into this MOS thyristor structure, specifically as a PMOSFET in the n-emitter zone 5.
  • the source p'-Geoiet S4 of this MOSFET is connected to the source region S1 of the series MOSFET M1 and the drain region S4 of M4 is connected to The gate G1 of M1 is connected.
  • the MOSFET M4 is between the gate and the source of M1.
  • the gate G4 of M4 is connected to the outer cathode KA.
  • the gate-source SDannu ⁇ g ⁇ es MOSFETs M4 is thus by the drain-source voltage of Series MOSFETs M1 supplied In addition to the MOSFET M4, the MOSFET M2 is also switched on when the current is too high. The protection of the component functions unchanged. It has already been described in detail with reference to FIG.
  • the ignition MOSFET M3 required to ignite the thyristor is not contained in the unit cell which is shown in FIG. 4, since a ignition MOSFET can supply several tents as shown in FIG. 4 for the self-propagation of the ignition pulse
  • FIG. 5 A further example of a structure according to the invention, with integrated overcurrent protection, is shown in FIG. 5.
  • This component can be manufactured using the conventional IGBT process.
  • an NMOSFET M1 is connected in series with the main thyristor Main thyristor and NMOSFET M1 the voltage drop dram-source also grows, whereby the potential of p-zone 4 and ⁇ er n-zone 7 is increased.
  • the PMOSFET M2 has the switched-on state the result is that perforators migrate from p-zone 4 to cathode KA and the current in the component saturates
  • the voltage drop between drain and source also increases.
  • the switch NMOSFET M4 on The switched-on state of the NMOSFET M4 pulls down the gate potential of the NMOSFET M1 and M3. This greatly reduces the current through M1 and thus also the current through the entire component
  • the MOSFETs M1 and M4 are produced in an insulated box and the MOSFETs M2 and M3 in a second insulated box.This is done on the one hand by the buried layer I and on the other hand the zone 10, which extends from the grained layer to the surface and both Partial areas or boxes isolated from each other This avoids the risk that the parasitic thyristor can snap into place
  • FIG. 7 shows another lateral embodiment of the invention using the Juncticn isolation technology.
  • the method of operation is the same as in the previous example (FIG. 6).
  • the principle has already been described in detail in FIG. 1.
  • the insulation layer 10 in FIG. 6 is here not necessary ⁇ a the MOSFET M3 was moved to the other side of the arrangement

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un thyristor à autoprotection comportant un MOSFET (M1) branché en série et un deuxième MOSFET (M2) autoentretenu entre la base p du thyristor et la cathode externe (KA). Dans ce thyristor, plusieurs cellules unitaires destinées au thyristor sont montées en parallèle dans une tranche semiconductrice. La tension dans le MOSFET (M1) en série sert à indiquer un courant de surcharge et une élévation de température. Il est prévu un autre MOSFET (M4) dont la région de source est reliée à la source du MOSFET en série (M1), dont le drain est relié à la grille du MOSFET en série (M1) et dont la grille est reliée au drain du MOSFET en série (M1). Une résistance (Rg) est située entre l'électrode de grille (G1) du MOSFET en série (M1) et la grille (G) du composant.
EP98924147A 1997-05-23 1998-04-18 Thyristor a auto protection Withdrawn EP0983613A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19721655A DE19721655C1 (de) 1997-05-23 1997-05-23 Thyristor mit Selbstschutz
DE19721655 1997-05-23
PCT/EP1998/002305 WO1998053503A1 (fr) 1997-05-23 1998-04-18 Thyristor a auto protection

Publications (1)

Publication Number Publication Date
EP0983613A1 true EP0983613A1 (fr) 2000-03-08

Family

ID=7830318

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98924147A Withdrawn EP0983613A1 (fr) 1997-05-23 1998-04-18 Thyristor a auto protection

Country Status (4)

Country Link
US (1) US6423987B1 (fr)
EP (1) EP0983613A1 (fr)
DE (1) DE19721655C1 (fr)
WO (1) WO1998053503A1 (fr)

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EP2257946A1 (fr) * 2008-03-31 2010-12-08 Hewlett-Packard Development Company, L.P. Utilisation d'un fusible passif comme élément de détection de courant dans un circuit à fusible électronique
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8432651B2 (en) 2010-06-09 2013-04-30 Analog Devices, Inc. Apparatus and method for electronic systems reliability
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8592860B2 (en) 2011-02-11 2013-11-26 Analog Devices, Inc. Apparatus and method for protection of electronic circuits operating under high stress conditions
US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
US8947841B2 (en) 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
US8637899B2 (en) * 2012-06-08 2014-01-28 Analog Devices, Inc. Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
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US8860080B2 (en) 2012-12-19 2014-10-14 Analog Devices, Inc. Interface protection device with integrated supply clamp and method of forming the same
US9275991B2 (en) 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp
US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
US9171832B2 (en) 2013-05-24 2015-10-27 Analog Devices, Inc. Analog switch with high bipolar blocking voltage in low voltage CMOS process
US9508841B2 (en) * 2013-08-01 2016-11-29 General Electric Company Method and system for a semiconductor device with integrated transient voltage suppression
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US9478608B2 (en) 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
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US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
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Also Published As

Publication number Publication date
US6423987B1 (en) 2002-07-23
WO1998053503A1 (fr) 1998-11-26
DE19721655C1 (de) 1998-12-03

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