EP0976157A2 - Thyristor commande par emetteur - Google Patents
Thyristor commande par emetteurInfo
- Publication number
- EP0976157A2 EP0976157A2 EP97943875A EP97943875A EP0976157A2 EP 0976157 A2 EP0976157 A2 EP 0976157A2 EP 97943875 A EP97943875 A EP 97943875A EP 97943875 A EP97943875 A EP 97943875A EP 0976157 A2 EP0976157 A2 EP 0976157A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- zone
- cathode
- emitter
- thyristor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 230000000903 blocking effect Effects 0.000 claims abstract description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Definitions
- the MOSFET is short-circuited, this can lead to the breakdown of the MOSFET. 3.
- the hole current flowing through the p-channel builds up a lateral voltage drop after being trapped by the p-well region. This voltage drop is most positive on the left side of the component (see FIG. 1, center of the floating emitter region). Since the potential of the floating n + emitter is limited to the diode drop of the very positive p-well potential, the transition from the p-well to the nf region, starting from the center of the floating emitter and growing up to the JFET region, is increasing Reversed polarity. Now, however, the area of the p-well is short-circuited to the cathode in the z-direction. Hence the
- the anode receives a high voltage
- the high potential of the source region S3 of the parallel connected lateral PMOSFET M3 together with the n-substrate 3 ensures that the PMOSFET M3, whose gate is at cathode potential, is switched on with the aid of an inversion channel 7.
- the switched on PMOSFET conducts the holes from the p-base zone 4 to the cathode, limits their potential and thus the potential of the floating n + emitter zone 5. This means that the voltage drop from drain to source of the lateral NMOSFET M l is limited by the PMOSFET M3 . This gives the component a very good current saturation behavior.
- the lateral spread of the floating nf emitter zone 5 and the p base zone 4 under the n emitter zone 5 can be limited to such an extent that requirements of the circuit design can be taken into account. Ultimately, this leads to a reduction in the size of the component cells in the integrated circuit.
- the bias of the gate G is reduced, the lateral NMOSFET Ml and the n-channel DMOSFET M2 also being switched off. Because of the continuity condition for the current, the potential of the floating n + emitter 5, the p base 4 and thus the potential of the n base region 3 increases very quickly. When the potential of the n-base 3 has increased above a certain value, the parallel PMOSFET M3 switches on.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
L'invention concerne un thyristor commandé par émetteur, comportant un thyristor principal (TH) comprenant un émetteur anodique p+ (1), une zone de dérive (3') à type de conduction opposée, une zone (4) qui présente à l'état hors service, une zone de blocage à l'encontre de la zone (3) et une zone d'émission (5) côté cathode, à type de conduction inversée, de manière à produire une succession de zones p+n-pn+. Une structure de transistor (T) est située parallèlement à cette succession de zones, elle comprend les trois premiers domaines de conductibilité alternée avec un émetteur (1), la base (3) et le collecteur (8). Cette structure contient un transistor à effet de champ à canal N (M1) pour piloter directement l'émetteur cathodique (5) par la borne de cathode (KA), la source de ce transistor étant également en contact avec la cathode, comme la région du collecteur (8) qui forme à la surface du semi-conducteur une zone de canal du transistor à effet de champ, la zone du drain associée étant reliée à l'émetteur cathodique n+(5) du thyristor principal (TH) par l'intermédiaire d'un conducteur (6) électrique. L'invention concerne en outre un transistor à effet de champ à double diffusion (M2) dont la grille (G2) est connectée à la grille (G1) du transistor à effet de champ à canal N (M1), à une source (S2) en contact avec la cathode (K) et intégrée dans une base p. Une connexion conductrice est établie avec le contact cathodique du transistor à effet de champ à canal N de mise en circuit (M1) et la connexion commune est guidée jusqu'à une borne de cathode (KA). Une zone du drain (D2) est intégrée dans la zone de dérive (3), les zones de substrat de M1 et de M2 étant mis en contact avec la cathode. La structure contient un transistor à effet de champ à canal P (M3) dont la grille est connectée à la cathode et dont le drain (D3) fait partie de la zone du collecteur (8) du transistor (T) pour le courant dérivé. Sa zone de source est connectée à la zone de base (4) du thyristor principal (TH), située à proximité de la cathode et sa zone de substrat est formée par une partie de la zone (3) dopée N qui jouxte la surface du composant.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19638769 | 1996-09-21 | ||
DE19638769A DE19638769C1 (de) | 1996-09-21 | 1996-09-21 | Emittergesteuerter Thyristor |
PCT/EP1997/005165 WO1998012749A2 (fr) | 1996-09-21 | 1997-09-20 | Thyristor commande par emetteur |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0976157A2 true EP0976157A2 (fr) | 2000-02-02 |
Family
ID=7806465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97943875A Withdrawn EP0976157A2 (fr) | 1996-09-21 | 1997-09-20 | Thyristor commande par emetteur |
Country Status (4)
Country | Link |
---|---|
US (1) | US6118141A (fr) |
EP (1) | EP0976157A2 (fr) |
DE (1) | DE19638769C1 (fr) |
WO (1) | WO1998012749A2 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9921068D0 (en) * | 1999-09-08 | 1999-11-10 | Univ Montfort | Bipolar mosfet device |
JP2001085463A (ja) * | 1999-09-09 | 2001-03-30 | Rohm Co Ltd | 半導体チップおよびそれを用いた半導体装置 |
DE19961297A1 (de) * | 1999-12-18 | 2001-06-21 | Bosch Gmbh Robert | Schaltungsanordnung zur Verpolsicherung eines DMOS-Transistors |
JPWO2002059478A1 (ja) * | 2001-01-24 | 2004-05-27 | 株式会社日立製作所 | 内燃機関用点火装置 |
KR100463029B1 (ko) * | 2002-03-25 | 2004-12-23 | 재단법인서울대학교산학협력재단 | 수평형 사이리스터 |
US6888176B1 (en) * | 2002-10-01 | 2005-05-03 | T-Ram, Inc. | Thyrister semiconductor device |
CN101484996B (zh) * | 2006-05-18 | 2011-05-18 | 意法半导体股份有限公司 | 具有高开关速度的三端功率器件以及制造工艺 |
JP2008028353A (ja) * | 2006-06-22 | 2008-02-07 | Sony Corp | 半導体装置およびその駆動方法 |
US8519432B2 (en) * | 2007-03-27 | 2013-08-27 | Analog Devices, Inc. | Semiconductor switch |
US10784372B2 (en) * | 2015-04-03 | 2020-09-22 | Magnachip Semiconductor, Ltd. | Semiconductor device with high voltage field effect transistor and junction field effect transistor |
CN105336767A (zh) * | 2015-10-08 | 2016-02-17 | 深圳市可易亚半导体科技有限公司 | 横向沟槽电极双通道发射极关断晶闸管 |
CN112838084B (zh) * | 2021-01-05 | 2023-05-12 | 湖南大学 | 一种SiC GTO与MESFET集成结构及其制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE7407224L (sv) * | 1974-05-31 | 1975-12-01 | Tore Georg Palmaer | Takkonstruktion |
JPH05283702A (ja) * | 1992-04-03 | 1993-10-29 | Hitachi Ltd | 複合制御型半導体装置及びそれを使用した電力変換装置 |
DE4228832C2 (de) * | 1992-08-29 | 1994-11-24 | Daimler Benz Ag | Feldeffekt-gesteuertes Halbleiterbauelement |
JP3255547B2 (ja) * | 1994-03-09 | 2002-02-12 | 株式会社東芝 | 絶縁ゲート付きサイリスタ |
JP3180875B2 (ja) * | 1994-04-01 | 2001-06-25 | 富士電機株式会社 | 絶縁ゲート型サイリスタ |
US5498884A (en) * | 1994-06-24 | 1996-03-12 | International Rectifier Corporation | MOS-controlled thyristor with current saturation characteristics |
US5665988A (en) * | 1995-02-09 | 1997-09-09 | Fuji Electric Co., Ltd. | Conductivity-modulation semiconductor |
JPH08274306A (ja) * | 1995-04-03 | 1996-10-18 | Fuji Electric Co Ltd | 絶縁ゲート型サイリスタ |
-
1996
- 1996-09-21 DE DE19638769A patent/DE19638769C1/de not_active Expired - Fee Related
-
1997
- 1997-09-20 US US09/269,599 patent/US6118141A/en not_active Expired - Lifetime
- 1997-09-20 WO PCT/EP1997/005165 patent/WO1998012749A2/fr not_active Application Discontinuation
- 1997-09-20 EP EP97943875A patent/EP0976157A2/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO9812749A3 * |
Also Published As
Publication number | Publication date |
---|---|
WO1998012749A3 (fr) | 1999-11-25 |
US6118141A (en) | 2000-09-12 |
DE19638769C1 (de) | 1998-03-05 |
WO1998012749A2 (fr) | 1998-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19990130 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT |
|
17Q | First examination report despatched |
Effective date: 20010720 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20031002 |