EP0976157A2 - Thyristor commande par emetteur - Google Patents

Thyristor commande par emetteur

Info

Publication number
EP0976157A2
EP0976157A2 EP97943875A EP97943875A EP0976157A2 EP 0976157 A2 EP0976157 A2 EP 0976157A2 EP 97943875 A EP97943875 A EP 97943875A EP 97943875 A EP97943875 A EP 97943875A EP 0976157 A2 EP0976157 A2 EP 0976157A2
Authority
EP
European Patent Office
Prior art keywords
zone
cathode
emitter
thyristor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97943875A
Other languages
German (de)
English (en)
Inventor
Shuming Xu
Rainer Constapel
Jacek Korec
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Semiconductor GmbH
Original Assignee
Vishay Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor GmbH filed Critical Vishay Semiconductor GmbH
Publication of EP0976157A2 publication Critical patent/EP0976157A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Definitions

  • the MOSFET is short-circuited, this can lead to the breakdown of the MOSFET. 3.
  • the hole current flowing through the p-channel builds up a lateral voltage drop after being trapped by the p-well region. This voltage drop is most positive on the left side of the component (see FIG. 1, center of the floating emitter region). Since the potential of the floating n + emitter is limited to the diode drop of the very positive p-well potential, the transition from the p-well to the nf region, starting from the center of the floating emitter and growing up to the JFET region, is increasing Reversed polarity. Now, however, the area of the p-well is short-circuited to the cathode in the z-direction. Hence the
  • the anode receives a high voltage
  • the high potential of the source region S3 of the parallel connected lateral PMOSFET M3 together with the n-substrate 3 ensures that the PMOSFET M3, whose gate is at cathode potential, is switched on with the aid of an inversion channel 7.
  • the switched on PMOSFET conducts the holes from the p-base zone 4 to the cathode, limits their potential and thus the potential of the floating n + emitter zone 5. This means that the voltage drop from drain to source of the lateral NMOSFET M l is limited by the PMOSFET M3 . This gives the component a very good current saturation behavior.
  • the lateral spread of the floating nf emitter zone 5 and the p base zone 4 under the n emitter zone 5 can be limited to such an extent that requirements of the circuit design can be taken into account. Ultimately, this leads to a reduction in the size of the component cells in the integrated circuit.
  • the bias of the gate G is reduced, the lateral NMOSFET Ml and the n-channel DMOSFET M2 also being switched off. Because of the continuity condition for the current, the potential of the floating n + emitter 5, the p base 4 and thus the potential of the n base region 3 increases very quickly. When the potential of the n-base 3 has increased above a certain value, the parallel PMOSFET M3 switches on.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

L'invention concerne un thyristor commandé par émetteur, comportant un thyristor principal (TH) comprenant un émetteur anodique p+ (1), une zone de dérive (3') à type de conduction opposée, une zone (4) qui présente à l'état hors service, une zone de blocage à l'encontre de la zone (3) et une zone d'émission (5) côté cathode, à type de conduction inversée, de manière à produire une succession de zones p+n-pn+. Une structure de transistor (T) est située parallèlement à cette succession de zones, elle comprend les trois premiers domaines de conductibilité alternée avec un émetteur (1), la base (3) et le collecteur (8). Cette structure contient un transistor à effet de champ à canal N (M1) pour piloter directement l'émetteur cathodique (5) par la borne de cathode (KA), la source de ce transistor étant également en contact avec la cathode, comme la région du collecteur (8) qui forme à la surface du semi-conducteur une zone de canal du transistor à effet de champ, la zone du drain associée étant reliée à l'émetteur cathodique n+(5) du thyristor principal (TH) par l'intermédiaire d'un conducteur (6) électrique. L'invention concerne en outre un transistor à effet de champ à double diffusion (M2) dont la grille (G2) est connectée à la grille (G1) du transistor à effet de champ à canal N (M1), à une source (S2) en contact avec la cathode (K) et intégrée dans une base p. Une connexion conductrice est établie avec le contact cathodique du transistor à effet de champ à canal N de mise en circuit (M1) et la connexion commune est guidée jusqu'à une borne de cathode (KA). Une zone du drain (D2) est intégrée dans la zone de dérive (3), les zones de substrat de M1 et de M2 étant mis en contact avec la cathode. La structure contient un transistor à effet de champ à canal P (M3) dont la grille est connectée à la cathode et dont le drain (D3) fait partie de la zone du collecteur (8) du transistor (T) pour le courant dérivé. Sa zone de source est connectée à la zone de base (4) du thyristor principal (TH), située à proximité de la cathode et sa zone de substrat est formée par une partie de la zone (3) dopée N qui jouxte la surface du composant.
EP97943875A 1996-09-21 1997-09-20 Thyristor commande par emetteur Withdrawn EP0976157A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19638769 1996-09-21
DE19638769A DE19638769C1 (de) 1996-09-21 1996-09-21 Emittergesteuerter Thyristor
PCT/EP1997/005165 WO1998012749A2 (fr) 1996-09-21 1997-09-20 Thyristor commande par emetteur

Publications (1)

Publication Number Publication Date
EP0976157A2 true EP0976157A2 (fr) 2000-02-02

Family

ID=7806465

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97943875A Withdrawn EP0976157A2 (fr) 1996-09-21 1997-09-20 Thyristor commande par emetteur

Country Status (4)

Country Link
US (1) US6118141A (fr)
EP (1) EP0976157A2 (fr)
DE (1) DE19638769C1 (fr)
WO (1) WO1998012749A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置
DE19961297A1 (de) * 1999-12-18 2001-06-21 Bosch Gmbh Robert Schaltungsanordnung zur Verpolsicherung eines DMOS-Transistors
JPWO2002059478A1 (ja) * 2001-01-24 2004-05-27 株式会社日立製作所 内燃機関用点火装置
KR100463029B1 (ko) * 2002-03-25 2004-12-23 재단법인서울대학교산학협력재단 수평형 사이리스터
US6888176B1 (en) * 2002-10-01 2005-05-03 T-Ram, Inc. Thyrister semiconductor device
US7982528B2 (en) * 2006-05-18 2011-07-19 Stmicroelectronics, S.R.L. Three-terminal power device with high switching speed and manufacturing process
JP2008028353A (ja) * 2006-06-22 2008-02-07 Sony Corp 半導体装置およびその駆動方法
US8519432B2 (en) * 2007-03-27 2013-08-27 Analog Devices, Inc. Semiconductor switch
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
CN105336767A (zh) * 2015-10-08 2016-02-17 深圳市可易亚半导体科技有限公司 横向沟槽电极双通道发射极关断晶闸管
CN112838084B (zh) * 2021-01-05 2023-05-12 湖南大学 一种SiC GTO与MESFET集成结构及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7407224L (sv) * 1974-05-31 1975-12-01 Tore Georg Palmaer Takkonstruktion
JPH05283702A (ja) * 1992-04-03 1993-10-29 Hitachi Ltd 複合制御型半導体装置及びそれを使用した電力変換装置
DE4228832C2 (de) * 1992-08-29 1994-11-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
JP3255547B2 (ja) * 1994-03-09 2002-02-12 株式会社東芝 絶縁ゲート付きサイリスタ
JP3180875B2 (ja) * 1994-04-01 2001-06-25 富士電機株式会社 絶縁ゲート型サイリスタ
US5498884A (en) * 1994-06-24 1996-03-12 International Rectifier Corporation MOS-controlled thyristor with current saturation characteristics
US5665988A (en) * 1995-02-09 1997-09-09 Fuji Electric Co., Ltd. Conductivity-modulation semiconductor
JPH08274306A (ja) * 1995-04-03 1996-10-18 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9812749A3 *

Also Published As

Publication number Publication date
DE19638769C1 (de) 1998-03-05
WO1998012749A3 (fr) 1999-11-25
WO1998012749A2 (fr) 1998-03-26
US6118141A (en) 2000-09-12

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