EP0975006A3 - Procédé de mesure de la densité de plasma, sonde pour la mesure de la densité de plasma et appareil pour la mesure de la densité de plasma - Google Patents

Procédé de mesure de la densité de plasma, sonde pour la mesure de la densité de plasma et appareil pour la mesure de la densité de plasma Download PDF

Info

Publication number
EP0975006A3
EP0975006A3 EP99114078A EP99114078A EP0975006A3 EP 0975006 A3 EP0975006 A3 EP 0975006A3 EP 99114078 A EP99114078 A EP 99114078A EP 99114078 A EP99114078 A EP 99114078A EP 0975006 A3 EP0975006 A3 EP 0975006A3
Authority
EP
European Patent Office
Prior art keywords
plasma density
measuring
plasma
frequency power
density information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99114078A
Other languages
German (de)
English (en)
Other versions
EP0975006A2 (fr
Inventor
Hideo Sugai
Seiichi Takasuga
Naoki Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagoya University NUC
Nissin Inc
Original Assignee
Nagoya University NUC
Nissin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagoya University NUC, Nissin Inc filed Critical Nagoya University NUC
Publication of EP0975006A2 publication Critical patent/EP0975006A2/fr
Publication of EP0975006A3 publication Critical patent/EP0975006A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/0006Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0062Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using microwaves

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
EP99114078A 1998-07-23 1999-07-20 Procédé de mesure de la densité de plasma, sonde pour la mesure de la densité de plasma et appareil pour la mesure de la densité de plasma Withdrawn EP0975006A3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP20812998 1998-07-23
JP20812998 1998-07-23
JP5863699 1999-03-05
JP05863699A JP3497092B2 (ja) 1998-07-23 1999-03-05 プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置

Publications (2)

Publication Number Publication Date
EP0975006A2 EP0975006A2 (fr) 2000-01-26
EP0975006A3 true EP0975006A3 (fr) 2001-03-07

Family

ID=26399665

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99114078A Withdrawn EP0975006A3 (fr) 1998-07-23 1999-07-20 Procédé de mesure de la densité de plasma, sonde pour la mesure de la densité de plasma et appareil pour la mesure de la densité de plasma

Country Status (4)

Country Link
US (2) US6339297B1 (fr)
EP (1) EP0975006A3 (fr)
JP (1) JP3497092B2 (fr)
KR (1) KR20000011784A (fr)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619468B2 (ja) * 1999-03-25 2011-01-26 株式会社東芝 プラズマ処理方法、プラズマ処理装置およびプラズマモニタリング装置
US6741944B1 (en) * 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
US6646386B1 (en) * 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
US6861844B1 (en) 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US6833710B2 (en) * 2000-10-27 2004-12-21 Axcelis Technologies, Inc. Probe assembly for detecting an ion in a plasma generated in an ion source
US6559650B2 (en) * 2001-06-05 2003-05-06 Eni Technology, Inc. RF power probe head with a thermally conductive bushing
KR100751610B1 (ko) * 2001-10-24 2007-08-22 동경 엘렉트론 주식회사 벽막(壁膜)감시용 방법 및 장치
KR100458328B1 (ko) * 2002-03-27 2004-11-26 주성엔지니어링(주) 플라즈마 감지장치
US6819052B2 (en) * 2002-05-31 2004-11-16 Nagano Japan Radio Co., Ltd. Coaxial type impedance matching device and impedance detecting method for plasma generation
US6864636B1 (en) * 2002-07-25 2005-03-08 Mark J. Hagmann Apparatus, method, and system for a laser-assisted field emission microwave signal generator
JP4099074B2 (ja) * 2003-01-27 2008-06-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
KR100473794B1 (ko) * 2003-07-23 2005-03-14 한국표준과학연구원 플라즈마 전자밀도 측정 및 모니터링 장치
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US20050188922A1 (en) * 2004-02-26 2005-09-01 Tokyo Electron Limited. Plasma processing unit
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US20050284570A1 (en) * 2004-06-24 2005-12-29 Doran Daniel B Diagnostic plasma measurement device having patterned sensors and features
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
FR2876536B1 (fr) * 2004-10-07 2007-01-26 Ecole Polytechnique Etablissem Dispositif et procede de caracterisation de plasma
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US20060166376A1 (en) * 2005-01-21 2006-07-27 Craig Alan R Compositions for use as a signal generation component and methods of using same
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7477711B2 (en) * 2005-05-19 2009-01-13 Mks Instruments, Inc. Synchronous undersampling for high-frequency voltage and current measurements
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US8040138B2 (en) 2005-08-31 2011-10-18 National University Corporation Nagoya University Planar type frequency shift probe for measuring plasma electron densities and method and apparatus for measuring plasma electron densities
US20070075036A1 (en) * 2005-09-30 2007-04-05 Paul Moroz Method and apparatus for measuring plasma density in processing reactors using a short dielectric cap
US20070074811A1 (en) * 2005-09-30 2007-04-05 Paul Moroz Method and apparatus for measuring plasma density in processing reactors using a long dielectric tube
US20070074812A1 (en) * 2005-09-30 2007-04-05 Andrej Mitrovic Temperature control of plasma density probe
DE102006014106B3 (de) * 2006-03-24 2007-08-30 RUHR-UNIVERSITäT BOCHUM Vorrichtung und Verfahren zur Messung der Dichte eines Plasmas
CN101583736A (zh) * 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
JP5111914B2 (ja) * 2007-03-26 2013-01-09 Nuエコ・エンジニアリング株式会社 粒子密度測定プローブ及び粒子密度測定装置
US20090005772A1 (en) * 2007-06-28 2009-01-01 Rhytec Limited Tissue treatment apparatus
JP5026916B2 (ja) * 2007-10-19 2012-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2009146439A1 (fr) * 2008-05-30 2009-12-03 Colorado State University Research Foundation Système, procédé et dispositif de formation de plasma
US7982187B2 (en) * 2008-10-14 2011-07-19 De Gorordo Alvaro Garcia Method and apparatus for photon-assisted evaluation of a plasma
US9376754B2 (en) * 2009-02-12 2016-06-28 Mitsui Engineering & Shipbuilding Thin film forming method
JP5478924B2 (ja) * 2009-03-29 2014-04-23 学校法人中部大学 高圧力プラズマの電子密度および/または電子衝突周波数測定が可能な測定方法及び測定装置
IES20090733A2 (en) 2009-09-22 2011-03-30 Donal O'sullivan Sensor for measuring plasma parameters
DE102010055799B3 (de) * 2010-10-06 2016-10-06 RUHR-UNIVERSITäT BOCHUM Vorrichtung und Verwendung der Vorrichtung zur Messung der Dichte und/oder der Elektronentemperatur und/oder der Stoßfrequenz eines Plasmas
JP6097097B2 (ja) * 2013-03-04 2017-03-15 学校法人中部大学 プラズマ状態測定プローブ及びプラズマ状態測定装置
DE102013010408A1 (de) * 2013-06-21 2014-12-24 Hq-Dielectrics Gmbh Verfahren und vorrichtung zum detektieren einer plasmazündung
US9835761B2 (en) * 2014-02-05 2017-12-05 The United States Of America, As Represented By The Secretary Of The Navy Active remote detection of radioactivity based on electromagnetic signatures
JP6388491B2 (ja) 2014-05-02 2018-09-12 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
KR102417178B1 (ko) 2015-09-03 2022-07-05 삼성전자주식회사 마이크로파 탐침, 그 탐침을 구비한 플라즈마 모니터링 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법
US11532464B2 (en) * 2018-02-15 2022-12-20 Applied Materials, Inc. Reactor design for large-area VHF plasma processing with improved uniformity
DE102018115389B3 (de) 2018-06-26 2019-08-14 RUHR-UNIVERSITäT BOCHUM Sonde zur Messung von Plasmaparametern
JP2020194676A (ja) * 2019-05-27 2020-12-03 東京エレクトロン株式会社 プラズマ密度モニタ、プラズマ処理装置、およびプラズマ処理方法
JP2020202052A (ja) * 2019-06-07 2020-12-17 東京エレクトロン株式会社 プラズマ電界モニタ、プラズマ処理装置、およびプラズマ処理方法
CN110402005A (zh) * 2019-07-16 2019-11-01 上海红璨科技有限公司 一种用于等离子体诊断的中空探针
CN111278205B (zh) * 2020-03-17 2024-09-13 中国科学技术大学 一种长时间测量等离子体密度的双色激光光纤干涉仪
DE102020115056A1 (de) 2020-06-05 2021-12-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Messsonde zum Messen von für ein Plasma charakteristischen Größen
US11515150B2 (en) 2020-10-22 2022-11-29 Applied Materials, Inc. Hardmask tuning by electrode adjustment
KR102340564B1 (ko) 2021-02-19 2021-12-20 한국표준과학연구원 플라즈마 이온 밀도 측정 장치와 이를 이용한 플라즈마 진단 장치
KR20230031709A (ko) * 2021-08-27 2023-03-07 삼성전자주식회사 플라즈마의 파라미터를 계측하는 방법, 플라즈마 파라미터를 계측하는 장치, 플라즈마 처리 시스템 및 웨이퍼 처리 방법
CN115002996B (zh) * 2022-06-15 2023-11-10 哈尔滨工业大学 一种适用于临近空间高气压强碰撞宽范围等离子体密度测量的三探针诊断系统及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471115A (en) * 1993-09-16 1995-11-28 Fujitsu Limited Method and apparatus for measuring electron density of plasma
EP0719077A1 (fr) * 1994-12-21 1996-06-26 Adolf-Slaby-Institut, Forschungsgesellschaft für Plasmatechnologie, und Mikrostrukturierung mbH Procédé et dispositif pour la détermination de paramètres absolus d'un plasma
EP0975005A2 (fr) * 1998-07-23 2000-01-26 The President of Nagoya University Procédé de contrôle de la puissance haute fréquence de génération de plasma, et appareil de génération de plasma

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03230461A (ja) * 1990-02-02 1991-10-14 Seiko Epson Corp プラズマ計測法
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
JP3292531B2 (ja) * 1993-01-15 2002-06-17 忠弘 大見 高周波励起プラズマの計測装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JPH08255696A (ja) * 1995-03-17 1996-10-01 Mitsubishi Heavy Ind Ltd プラズマ診断装置
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5841237A (en) * 1997-07-14 1998-11-24 Lockheed Martin Energy Research Corporation Production of large resonant plasma volumes in microwave electron cyclotron resonance ion sources
JP4130255B2 (ja) * 1998-04-08 2008-08-06 キヤノンアネルバ株式会社 プラズマ処理装置
US6441552B1 (en) * 1998-04-30 2002-08-27 Physical Sciences Inc. Apparatus and methods for generating persistent ionization plasmas
US6213050B1 (en) * 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471115A (en) * 1993-09-16 1995-11-28 Fujitsu Limited Method and apparatus for measuring electron density of plasma
EP0719077A1 (fr) * 1994-12-21 1996-06-26 Adolf-Slaby-Institut, Forschungsgesellschaft für Plasmatechnologie, und Mikrostrukturierung mbH Procédé et dispositif pour la détermination de paramètres absolus d'un plasma
EP0975005A2 (fr) * 1998-07-23 2000-01-26 The President of Nagoya University Procédé de contrôle de la puissance haute fréquence de génération de plasma, et appareil de génération de plasma

Also Published As

Publication number Publication date
KR20000011784A (ko) 2000-02-25
US6744211B2 (en) 2004-06-01
EP0975006A2 (fr) 2000-01-26
JP2000100599A (ja) 2000-04-07
US6339297B1 (en) 2002-01-15
US20020047543A1 (en) 2002-04-25
JP3497092B2 (ja) 2004-02-16

Similar Documents

Publication Publication Date Title
EP0975006A3 (fr) Procédé de mesure de la densité de plasma, sonde pour la mesure de la densité de plasma et appareil pour la mesure de la densité de plasma
WO2003060462A3 (fr) Procede et systeme d'examen de tissus en fonction de leurs proprietes dielectriques
EP0975005A3 (fr) Procédé de contrôle de la puissance haute fréquence de génération de plasma, et appareil de génération de plasma
EP0825415A3 (fr) Appareil et méthodes d'application pour la mesure de profiles de pneumatiques
JPH10511181A (ja) 電子式多目的物質レベルセンサ
EP1020735A3 (fr) Méthodes diagnostiques pour tracer une sonde
CN1898558B (zh) 用于热交换器管的扭转波检查的方法和系统
EP1359428A3 (fr) Appareil de mesure du taux spécifique d'absorption en fonction du champ magnétique proche pour l'utilisation dans l'appareil radio
WO2002086439A3 (fr) Procede et systeme de mesure de caracteristiques de diffusion optique
US20050246129A1 (en) Near-field scanning microwave microscope using dielectric resonator
WO2000036391A3 (fr) Sonde a ultrasons pour tres hautes temperatures et tres hautes pressions
WO1999063331A3 (fr) Capteur de fluides a micro-ondes et procede d'utilisation
CA2317794A1 (fr) Appareil mesureur de niveau avec conducteur helicoidal
CN111948462A (zh) 一种同轴结构宽带量子微波测量装置和方法
US6225812B1 (en) Method and apparatus for measuring the density of a substance having free water compensation
EP1241482A3 (fr) Procédé permettant d'analyser la source d'une onde électromagnétique
KR100833646B1 (ko) 펄스 플라즈마 전자밀도 및 전자온도 모니터링 장치 및방법
EP1021069A3 (fr) Four à micro-ondes possédant un capteur à champ magnétique
EP0921404A3 (fr) Procédé de mesure pour des caractéristiques en hautes fréquences des matériaux diélectriques et procédé de conception des circuits haute fréquence
DE59901237D1 (de) Mikrowellen-Füllstandsmessgerät mit verbesserter Signalqualität
Caspers et al. Impedance Evaluation of the SPS MKE Kicker with Transition Pieces between Tank and Kicker Module
CN111044834B (zh) 高功率下功率耦合器与高频腔之间的耦合度测量方法
JP2001147205A (ja) 汚泥濃度算出方法
CN207232097U (zh) 一种可实现同步耦合的超声耦合剂添加装置
Misra Evaluation of the complex permittivity of layered dielectric materials with the use of an open‐ended coaxial line

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20010508

AKX Designation fees paid

Free format text: DE FR GB

17Q First examination report despatched

Effective date: 20031229

17Q First examination report despatched

Effective date: 20031229

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20090203