EP0957420A2 - Circuit de verrouillage - Google Patents

Circuit de verrouillage Download PDF

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Publication number
EP0957420A2
EP0957420A2 EP99109644A EP99109644A EP0957420A2 EP 0957420 A2 EP0957420 A2 EP 0957420A2 EP 99109644 A EP99109644 A EP 99109644A EP 99109644 A EP99109644 A EP 99109644A EP 0957420 A2 EP0957420 A2 EP 0957420A2
Authority
EP
European Patent Office
Prior art keywords
transistor
voltage
clamping
diode
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99109644A
Other languages
German (de)
English (en)
Other versions
EP0957420A3 (fr
EP0957420B1 (fr
Inventor
Martin Feldtkeller
Harald Koffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0957420A2 publication Critical patent/EP0957420A2/fr
Publication of EP0957420A3 publication Critical patent/EP0957420A3/fr
Application granted granted Critical
Publication of EP0957420B1 publication Critical patent/EP0957420B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
EP99109644A 1998-05-15 1999-05-14 Circuit de verrouillage Expired - Lifetime EP0957420B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19821906 1998-05-15
DE19821906A DE19821906C1 (de) 1998-05-15 1998-05-15 Klemmschaltung

Publications (3)

Publication Number Publication Date
EP0957420A2 true EP0957420A2 (fr) 1999-11-17
EP0957420A3 EP0957420A3 (fr) 2000-03-29
EP0957420B1 EP0957420B1 (fr) 2003-04-16

Family

ID=7867934

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99109644A Expired - Lifetime EP0957420B1 (fr) 1998-05-15 1999-05-14 Circuit de verrouillage

Country Status (3)

Country Link
US (1) US6137278A (fr)
EP (1) EP0957420B1 (fr)
DE (2) DE19821906C1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242240B2 (en) * 2005-05-05 2007-07-10 Agere Systems, Inc. Low noise bandgap circuit
US20090121770A1 (en) 2007-03-29 2009-05-14 Linear Technology Corporation Method for clamping a semiconductor region at or near ground
JP4553395B2 (ja) * 2007-06-15 2010-09-29 シャープ株式会社 オシロスコープおよびそれを用いた半導体評価装置
EP2564220B1 (fr) * 2010-04-30 2016-04-20 Katholieke Universiteit Leuven Circuit d'écrêtage de tension et son utilisation
US20130027117A1 (en) * 2011-07-28 2013-01-31 Anadyne, Inc. Precision voltage clamp with very low temperature drift
CN109474246B (zh) * 2018-10-31 2022-06-28 西安微电子技术研究所 电压箝位保护结构及运算放大器输入级结构
CN111208401B (zh) * 2018-11-22 2023-01-31 宁波飞芯电子科技有限公司 一种钳位光电二极管的测试方法以及装置
CN112152189B (zh) * 2020-09-15 2023-01-31 广东省大湾区集成电路与系统应用研究院 一种钳位电路和电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764897A (en) * 1985-09-30 1988-08-16 Kabushiki Kaisha Toshiba Semiconductor memory device employing normally-on type GaAs-MESFET transfer gates
US5436552A (en) * 1992-09-22 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Clamping circuit for clamping a reference voltage at a predetermined level
US5614850A (en) * 1994-12-09 1997-03-25 Texas Instruments Incorporated Current sensing circuit and method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703711A (en) * 1971-01-04 1972-11-21 Honeywell Inf Systems Memory cell with voltage limiting at transistor control terminals
US3930172A (en) * 1974-11-06 1975-12-30 Nat Semiconductor Corp Input supply independent circuit
GB2189954B (en) * 1986-04-30 1989-12-20 Plessey Co Plc Improvements relating to memory cell devices
US4926073A (en) * 1989-05-01 1990-05-15 Motorola Inc. Negative voltage clamp
KR950005577B1 (ko) * 1992-12-30 1995-05-25 현대전자산업주식회사 비트 라인 부하 회로
FR2718259A1 (fr) * 1994-03-30 1995-10-06 Philips Composants Circuit régulateur fournissant une tension indépendante de l'alimentation et de la température.
US5519341A (en) * 1994-12-02 1996-05-21 Texas Instruments Incorporated Cross coupled quad comparator for current sensing independent of temperature

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764897A (en) * 1985-09-30 1988-08-16 Kabushiki Kaisha Toshiba Semiconductor memory device employing normally-on type GaAs-MESFET transfer gates
US5436552A (en) * 1992-09-22 1995-07-25 Mitsubishi Denki Kabushiki Kaisha Clamping circuit for clamping a reference voltage at a predetermined level
US5614850A (en) * 1994-12-09 1997-03-25 Texas Instruments Incorporated Current sensing circuit and method

Also Published As

Publication number Publication date
DE59905031D1 (de) 2003-05-22
US6137278A (en) 2000-10-24
DE19821906C1 (de) 2000-03-02
EP0957420A3 (fr) 2000-03-29
EP0957420B1 (fr) 2003-04-16

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