EP0894331B1 - Verfahren zur Herstellung einer Kathodenstrahlröhre - Google Patents
Verfahren zur Herstellung einer Kathodenstrahlröhre Download PDFInfo
- Publication number
- EP0894331B1 EP0894331B1 EP98900024A EP98900024A EP0894331B1 EP 0894331 B1 EP0894331 B1 EP 0894331B1 EP 98900024 A EP98900024 A EP 98900024A EP 98900024 A EP98900024 A EP 98900024A EP 0894331 B1 EP0894331 B1 EP 0894331B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- filter
- conductive
- sputtering
- cathode ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 34
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 238000007704 wet chemistry method Methods 0.000 claims abstract description 15
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 12
- 238000009987 spinning Methods 0.000 abstract description 7
- 238000001035 drying Methods 0.000 abstract description 3
- 229960001866 silicon dioxide Drugs 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005507 spraying Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/867—Means associated with the outside of the vessel for shielding, e.g. magnetic shields
- H01J29/868—Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/012—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/89—Optical components associated with the vessel
- H01J2229/8913—Anti-reflection, anti-glare, viewing angle and contrast improving treatments or devices
Definitions
- the invention relates to a method of manufacturing a cathode ray tube provided with a multilayer antistatic filter on a display window.
- Cathode ray tubes are used, inter alia, in television receivers and computer monitors.
- a method of the type mentioned in the opening paragraph and a cathode ray tube of the type mentioned in the second paragraph are known from European Patent Application EP 649160.
- the display window is statically charged and incident light is reflected by the display window.
- the conductive layer provides for the removal of the static charge, and the conductive layer and the second layer together form or are part of an anti-reflective filter to reduce reflection of incident light.
- the method in accordance with the invention is characterized in that a first conductive layer having a surface resistance not greater than 1 K ⁇ / Square and a thickness of the ordes of 10-20 nm or less is sputtered onto the display window, said layer being provided, by means of a wet-chemical process, with a further layer comprising SiO 2 , the first layer and the further layer being selected for together constituting a two-layer anti-reflection filter.
- the surface resistance of the conductive layer provided by sputtering is so low that, unlike the known method, a surface resistance below 1 k ⁇ /square is achieved at layer thicknesses of the order of 10-20 nm or less.
- the layer may be, for example, a metallic layer or, preferably, a layer on the basis of indium-tin oxide (for example a layer containing ITO or ATO). Metallic layers absorb more visible light than indium-tin-oxide layers. If the contrast is to be improved, a metallic layer can be provided, for example a very thin layer of aluminium. If the light intensity of the image displayed is important, then, preferably, a transparent conductive layer on the basis of metal oxides, for example on the basis of indium-tin oxide, is applied.
- resistive layer of such thickness actually does not exhibit useful interference phenomena.
- layers of such a large thickness at least two further layers of materials having different refractive indices must be applied to bring about a reflection-influencing effect.
- the further layer which is predominantly composed of silicon dioxide, is in the method in accordance with the invention, not applied by sputtering but provided by means of a wet-chemical process, for example by means of spinning a TEOS solution as described in European Patent Application EP 649160 (PHN 14.663).
- the thickness of said further layer is preferably of the order of 80-150 nm, and forming one layer of such thickness by means of sputtering is very difficult. If sputtering were to be employed, the desired reflection-influencing effect could only be achieved by applying various layers to the first layer or by very long sputtering times.
- the use for display applications is known of a transparent plastic plate which carries a sputtered electroconductive layer having a thickness of 10-300 nm and a sputtered SiO 2 layer.
- the thickness of the SiO 2 layer may be any thickness, as long as the layer can appropriately prevent reflection to the transparent plastic plate.
- reflection-influencing layers are to be understood to include layers which influence the glare (diffuse reflection) as well as layers which influence the specular reflection (the reflection coefficient R), either independently or in combination with the conductive layer.
- the first, conductive, sputtered layer is provided, with an anti-reflective layer containing silicon dioxide.
- an anti-reflective layer containing silicon dioxide By means of this embodiment of the method a double layer ARES filter ( A nti- R eflective E lectromagnetic S hielding) filter is obtained.
- ARES filter A nti- R eflective E lectromagnetic S hielding
- the anti-reflective effect is mainly produced by interference phenomena in the assembly of the conductive layer and the anti-reflective layer.
- the anti-reflective layer is provided by means of a wet-chemical process, for example, by spinning,
- the first, conductive, sputtered layer is provided with an anti-reflective layer containing silicon-dioxide which anti-reflective layer is coated with an anti-glare layer containing silicon dioxide.
- an anti-reflective layer containing silicon-dioxide which anti-reflective layer is coated with an anti-glare layer containing silicon dioxide.
- the first layer is provided with a second layer of a material other than silicon dioxide by means of sputtering, which second layer is provided with an anti-reflective layer containing silicon dioxide.
- a three-layer ARES A nti- R eflective E lectromagnetic S hielding
- the anti-reflective layer is provided by means of a wet-chemical process.
- the surface resistance of the first layer is below 500 ⁇ /square.
- the further layer comprises an absorbing substance.
- the color of the filter can be influenced.
- the anti-glare layer may be provided, for example, by spraying or atomizing an alcoholic solution of an alkoxysilane compound, followed by a treatment at an elevated temperature, thereby forming a layer of silicon dioxide.
- the resultant layer is scratch-resistant and has anti-glare properties owing to the surface texture formed by spraying. Said anti-glare effect is substantially independent of the wavelength of light.
- spraying or atomizing the alkoxysilane solution a matt surface texture is formed, which causes the resultant layer to exhibit an anti-glare effect. As a result, ambient light is reflected in a diffuse manner.
- Additional advantages of the additional layers of silicon dioxide include the reduced sensitivity to fingerprints and the greater hardness and scratch-resistance.
- the method according to the invention comprises an intermediate method step, between the sputtering process and the application of the further layer, in which intermediate method step the surface on which the further layer is to be provided is activated to increase the adhesion of the further layer.
- etching solution ed, caustic solution.
- the above-mentioned layer serves as a primer layer deposited on top of the sputtered conductive layer.
- Activation of said primer layer can alternatively be done by e.g. rubbing or etching in an Ar-gas.
- Fig. 1 is a schematic cut-away view of a cathode ray tube 1 having a glass envelope 2 comprising a display screen 3, a cone 4 and a neck 5.
- An electron gun 6 for generating an electron beam is accommodated in said neck.
- This electron beam is focused on a phosphor layer on the inner surface 7 of the display screen 3.
- the electron beam is deflected across the display screen 3 in two mutually perpendicular directions by means of a deflection-coil system (not shown).
- the display screen 3 is provided on the outside with an antistatic coating 8 in accordance with the invention.
- Fig. 2 is a schematic, sectional view of a display screen in accordance with the invention.
- Display screen 3 is provided with an antistatic coating 8.
- Said antistatic coating 8 comprises a first layer 9 (AS), a second layer 10 and a third layer 11.
- the first layer 9 comprises tin oxide and is provided by sputtering.
- the second layer is made of silicon dioxide.
- the first layer and the second layer together form an antireflection filter (AR).
- the second layer may be provided with absorbing constituents, for example, polypyrrole-latex particles, by means of which the transmission properties of the second layer can be changed.
- the third layer 11 (AG) provides for an anti-glare effect and is made, for example, of silicon dioxide which is provided by spraying.
- Figs. 3a through 3c illustrate a method in accordance with the invention.
- a second layer 32 of silicon dioxide is applied to said layer 31 by means of a wet-chemical process.
- a TEOS-solution is spin coated onto layer 31.
- a thermal treatment is carried out. This treatment results in the formation of a silicon-dioxide layer.
- a third layer for example a silicon-dioxide anti-glare layer, is provided by spraying so as to achieve an anti-glare effect.
- Fig. 4 illustrates a number of possible embodiments of the method in accordance with the invention.
- the first arrows it is schematically indicated which layers are first provided on the substrate by means of sputtering, with S indicating the substrate, ES indicating a conductive layer, for example, a metallic layer or, preferably, a layer of a material which is substantially composed of indium-tin oxide (for example ITO or ATO) and AR indicating an anti-reflective layer of a material other than silicon dioxide, for example titanium oxide or niobium oxide.
- ITO indium-tin oxide
- AR an anti-reflective layer of a material other than silicon dioxide, for example titanium oxide or niobium oxide.
- one or more layers containing silicon dioxide is/are provided on the sputtered layer(s) by means of a wet-chemical process, for example by spinning or spraying of a TEOS-solution.
- FIG. 4 shows the essence of the invention:
- the method in accordance with the invention has still other advantages which render the method very suitable for application on a large scale. Both sputtering and wet-chemical processes can be applied to cathode ray tubes which already are in the assembled state, and heating of the surface to be coated is hardly necessary, or perhaps not necessary at all.
- the filter is provided on a display window of an evacuated cathode ray tube.
- the method in accordance with the invention has a number of distinct advantages over methods requiring the display windows to be in the unassembled state, such as Chemical Vapor Deposition (CVD).
- CVD Chemical Vapor Deposition
- a filter is provided on an unassembled display window, said display window must subsequently be attached to the cone and evacuated. This process involves high temperatures (up to 450 °C). There is a risk that the filter provided is damaged by said high temperatures. Damage to the filter leads to reject and costs.
- the sputtered layer is mainly composed of indium-tin oxide, the refractive index of a sputtered indium-tin oxide layer is relatively high (above 1.9), which has a positive effect in embodiments in which the conductive layer, in combination with a layer containing silicon dioxide (refractive index 1.46), should provide for an anti-reflective effect.
- the above-mentioned advantages are independent of the exact value of the surface resistance of the conductive layer as well as of the composition of the conductive layer. Therefore, as regards these advantages, the surface resistance may he higher (for example 10 3 -10 5 ⁇ /square) and/or the conductive layer may be composed predominantly of another material (for example tin oxide).
- a display screen 3 is disposed in a sputter arrangement.
- a layer of a conductive material in this example indium-tin oxide (ITO) or antimony-doped indium-tin oxide (ATO) having a thickness of the order of 10-15 nm, is sputtered onto the display window.
- ITO indium-tin oxide
- ATO antimony-doped indium-tin oxide
- the refractive index is approximately 2.1
- the optical thickness of such a layer is approximately 20-30 nm.
- a solution of an alkoxysilane compound in accordance with Table 1 is (being) manufactured.
- the first layer (ES, see Fig. 4), which is obtained as described hereinabove, (a dried layer comprising conductive particles (for example ATO)), is provided, by means of spinning, with a layer of the TEOS-solution manufactured in accordance with Table 1.
- the temperature of the layer is maintained at 160 °C for approximately 90 minutes, thereby forming a properly adhering, smooth layer of silicon dioxide (AR', see Fig. 4).
- This additional layer of silicon dioxide has a thickness, for example, of 135 nm and a refractive index of 1.44.
- this layer In combination with the antistatic layer (ES), this layer has an anti-reflective effect. The reflection of visible light is reduced to approximately 0.8% by this two-layer coating (ES-AR').
- the high refractive index of the sputtered, conductive layer (preferably above 1.9) has the advantage that the reflection has been reduced relative to the known method.
- the surface resistance of a sputtered ITO layer having a thickness of 10-15 nm is approximately 500 ⁇ /square, which is much lower than the surface resistance of the known filter.
- a second, additional layer (AG) of silicon dioxide is provided by spraying a TEOS solution and subjecting said solution to a similar temperature treatment.
- This layer has a matt surface texture with anti-glare effect.
- the resultant coating is less sensitive to fingerprints.
- the reflection becomes less dependent on the wavelength because the incident light is scattered in a diffuse manner.
- the method described hereinabove can be applied to provide a (two-layer or multilayer) coating on an unassembled display screen, that is, a display screen which does not form part of a cathode ray tube (yet).
- the method is used to provide a coating on a display screen which forms part of an already evacuated cathode ray tube. In this case, the risk of damage to the coating is reduced.
- the method according to the invention comprises an intermediate method step, between the sputtering process and the application of the further layer, in which intermediate method step the surface on which the further layer is to be provided is activated to increase the adhesion of the further layer.
- etching solution ed. caustic solution.
- the above-mentioned layer serves as a primer layer deposited on top of the sputtered conductive layer.
- Activation of said primer layer can alternatively be done by e.g. rubbing or etching in an Ar-gas.
- the invention relates to a method of manufacturing a cathode ray tube comprising an antistatic filter, in which method a conductive layer (for example a material on the basis of tin oxide or tin-oxide compounds, such as indium-tin oxide) is applied by sputtering, and said conductive layer is provided with a further layer containing SiO 2 by means of a wet-chemical process, for example spinning and, subsequently, drying of a TEOS-compound.
- a conductive layer for example a material on the basis of tin oxide or tin-oxide compounds, such as indium-tin oxide
- a conductive layer for example a material on the basis of tin oxide or tin-oxide compounds, such as indium-tin oxide
- a conductive layer for example a material on the basis of tin oxide or tin-oxide compounds, such as indium-tin oxide
- a conductive layer for example a material on the basis of tin oxide or
- cathode ray tube is to be understood to mean, apart from conventional cathode ray tubes as shown in Fig. 1, devices in which electroluminescent phosphor is excited by means of controlled, charged particles (electrons and/or ions). Examples of such devices are so-called PDPs (Plasma Displays) in which phosphors are excited by means of plasma discharges, and flat display devices, as known from United States Patent US 5,313,136. The above-mentioned problems also occur in such devices.
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Surface Treatment Of Optical Elements (AREA)
Claims (8)
- Verfahren zum Herstellen einer Elektronenstrahlröhre mit einem antistatischen Mehrschicht-Filter an einem Wiedergabeschirm, dadurch gekennzeichnet, dass eine erste leitende Schicht mit einem Oberflächenwiderstand kleiner als 1 kOhm/Quadrat und mit einer Dicke der Größenordnung von 10-20 nm oder weniger, im Zerstäubungsverfahren auf dem Wiedergabefenster angebracht wird, wobei diese Schicht in einem nass-chemischen Prozess aufgetragen wird, wobei eine weitere Schicht SiO2 aufweist, wobei das Gebilde aus Schichten zum Bilden eines aus mehreren Schichten bestehenden Antireflexionsfilters gewählt wird.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die erste im Zerstäubungsverfahren aufgetragene leitende Schicht mit einer zweiten Schicht versehen ist, und zwar aus einem Material anders als Siliziumoxid in einem Zerstäubungsverfahren, wobei die zweite Schicht mit Hilfe eines nass-chemischen Prozesses mit der genannten weiteren SiO2 enthaltenden Schicht bedeckt wird, wobei das Gebilde aus Schichten selektiert wird zum Bilden eines aus mehreren Schichten bestehenden Antireflexionsfilters.
- Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass eine erste leitende Schicht mit einem Oberflächenwiderstand ≤500 Ohm/Quadrat vorgesehen wird.
- Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die weitere Schicht eine absorbierende Substanz enthält.
- Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die erste leitende Schicht ein leitendes Material auf Basis von ITO oder ATO enthält.
- Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die weitere Schicht mit Hilfe eines nass-chemischen Prozesses vorgesehen wird, wobei eine Antiblendungsschicht Siliziumdioxid enthält.
- Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Verfahren einen Zwischenverfahrensschritt umfasst, und zwar zwischen dem Zerstäuben und der Anordnung der weiteren Schicht, wobei in diesem Zwischenverfahrensschritt die Oberfläche, auf der die weitere Schicht vorgesehen werden soll, aktiviert wird.
- Verfahren nach Anspruch 7, dadurch gekennzeichnet, dass der Zwischenschritt das Anbringen einer Zwischenschicht umfasst, und zwar durch Zerstäubung dieser Schicht auf der ersten Schicht und durch Ätzung der Zwischenschicht.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98900024A EP0894331B1 (de) | 1997-01-17 | 1998-01-12 | Verfahren zur Herstellung einer Kathodenstrahlröhre |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97200608 | 1997-01-17 | ||
EP97200060 | 1997-01-17 | ||
PCT/IB1998/000027 WO1998032152A1 (en) | 1997-01-17 | 1998-01-12 | Method of manufacturing a cathode ray tube and a cathode ray tube |
EP98900024A EP0894331B1 (de) | 1997-01-17 | 1998-01-12 | Verfahren zur Herstellung einer Kathodenstrahlröhre |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0894331A1 EP0894331A1 (de) | 1999-02-03 |
EP0894331B1 true EP0894331B1 (de) | 2003-09-03 |
Family
ID=8227920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98900024A Expired - Lifetime EP0894331B1 (de) | 1997-01-17 | 1998-01-12 | Verfahren zur Herstellung einer Kathodenstrahlröhre |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0894331B1 (de) |
JP (1) | JP2000507041A (de) |
CN (1) | CN1199228C (de) |
DE (1) | DE69817711T2 (de) |
TW (1) | TW392189B (de) |
WO (1) | WO1998032152A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0975207B1 (de) * | 1998-07-23 | 2007-02-07 | Konica Corporation | Durchsichtiges Element zur Dämpfung von elektromagnetischen Wellen |
WO2001055752A1 (en) * | 2000-01-26 | 2001-08-02 | Sola International Holdings Limited | Anti-static, anti-reflection coating |
US20130202817A1 (en) | 2012-02-02 | 2013-08-08 | James DeCoux | Antistatic coating |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0405304A2 (de) * | 1989-06-29 | 1991-01-02 | Siemens Aktiengesellschaft | Dünnschichtwiderstände mit Flächenwiderstandswerten im Bereich zwischen 1M-Ohm und mehreren G-Ohm und Verfahren zu ihrer Herstellung |
JPH08211399A (ja) * | 1995-02-08 | 1996-08-20 | Teijin Ltd | 液晶表示パネル用フィルム透明電極の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0719551B2 (ja) * | 1985-04-22 | 1995-03-06 | 東レ株式会社 | 電磁波シールド性を有する光学フィルター |
DE3629996A1 (de) * | 1986-09-03 | 1988-03-17 | Flachglas Ag | Vorsatzaggregat fuer die kathodenstrahlroehre von monitoren, fernsehapparaten und dergleichen |
US5189337A (en) * | 1988-09-09 | 1993-02-23 | Hitachi, Ltd. | Ultrafine particles for use in a cathode ray tube or an image display face plate |
EP0649160B1 (de) * | 1993-10-18 | 2001-09-19 | Philips Electronics N.V. | Verfahren zur Herstellung einer Beschichtung auf einen Bildschirm und Anzeigevorrichtung die diese enthalt |
-
1997
- 1997-06-02 TW TW086107537A patent/TW392189B/zh not_active IP Right Cessation
-
1998
- 1998-01-12 DE DE69817711T patent/DE69817711T2/de not_active Expired - Fee Related
- 1998-01-12 JP JP10529169A patent/JP2000507041A/ja not_active Abandoned
- 1998-01-12 CN CN98800033.4A patent/CN1199228C/zh not_active Expired - Fee Related
- 1998-01-12 WO PCT/IB1998/000027 patent/WO1998032152A1/en active IP Right Grant
- 1998-01-12 EP EP98900024A patent/EP0894331B1/de not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0405304A2 (de) * | 1989-06-29 | 1991-01-02 | Siemens Aktiengesellschaft | Dünnschichtwiderstände mit Flächenwiderstandswerten im Bereich zwischen 1M-Ohm und mehreren G-Ohm und Verfahren zu ihrer Herstellung |
JPH08211399A (ja) * | 1995-02-08 | 1996-08-20 | Teijin Ltd | 液晶表示パネル用フィルム透明電極の製造方法 |
Non-Patent Citations (1)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26) * |
Also Published As
Publication number | Publication date |
---|---|
WO1998032152A1 (en) | 1998-07-23 |
DE69817711D1 (de) | 2003-10-09 |
EP0894331A1 (de) | 1999-02-03 |
TW392189B (en) | 2000-06-01 |
CN1216152A (zh) | 1999-05-05 |
JP2000507041A (ja) | 2000-06-06 |
DE69817711T2 (de) | 2004-07-15 |
CN1199228C (zh) | 2005-04-27 |
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