EP0738008A2 - Module à semi-conducteur de puissance - Google Patents

Module à semi-conducteur de puissance Download PDF

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Publication number
EP0738008A2
EP0738008A2 EP96810191A EP96810191A EP0738008A2 EP 0738008 A2 EP0738008 A2 EP 0738008A2 EP 96810191 A EP96810191 A EP 96810191A EP 96810191 A EP96810191 A EP 96810191A EP 0738008 A2 EP0738008 A2 EP 0738008A2
Authority
EP
European Patent Office
Prior art keywords
module
control unit
base plate
connections
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96810191A
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German (de)
English (en)
Other versions
EP0738008B1 (fr
EP0738008A3 (fr
Inventor
Thomas Dr. Stockmeier
Uwe Dr. Thiemann
Reinhold Dr. Bayerer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Schweiz AG
Original Assignee
ABB Management AG
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Publication date
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Publication of EP0738008A2 publication Critical patent/EP0738008A2/fr
Publication of EP0738008A3 publication Critical patent/EP0738008A3/fr
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Publication of EP0738008B1 publication Critical patent/EP0738008B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Definitions

  • the invention relates to the field of power electronics.
  • the power connections run perpendicular to the base plate (see DE 39 31 634 Fig. 4 and column 5, lines 24 ff. And DE 43 30 070 Fig. 8).
  • the Power connections are led out of the module housing perpendicular to the base plate.
  • the control units must be arranged at a certain distance, for example above or next to the modules. This entails relatively long connection lines to the control unit, which is used to control the module.
  • the long connecting lines result in an undesirably high inductance of the arrangement, which can have a limiting effect particularly with regard to high switching frequencies.
  • the object of the present invention is therefore to provide a power semiconductor module in which the connecting lines to the control unit are as short as possible and the arrangement is thereby as low-inductance as possible.
  • the essence of the invention is therefore that the power connections run parallel to the base plate and are led out of the housing parallel to the base plate. This makes it possible to mount the control unit directly on the surface of the module housing facing away from the base plate. This enables the use of short connecting lines and thus a low-inductance structure.
  • control connection which has the smallest, ideally none, potential difference compared to the control unit is located furthest away from the base plate, this power connection just acts for the control unit as a shield for electromagnetic fields, which are caused by switching the module.
  • fastening means such as screw holes and screws are provided on the side of the module housing facing away from the base plate.
  • the control and auxiliary connections can be led out on the top of the housing.
  • the control unit is then plugged into these connections and the connection between the control and auxiliary connections of the module and the corresponding connections of the control unit is made e.g. by means of simple screw or plug contacts.
  • modules according to the invention it is thus possible to produce circuit arrangements in which the control unit of the modules is mounted directly on the modules and in which the connection between module and control unit can advantageously be established in a low-inductance manner, so that the modules can be used in particular for higher frequencies.
  • FIG. 3 shows the structure of a circuit arrangement with a power semiconductor module 1 and a control unit 12.
  • the control unit 12 is fastened on the housing 2 of the module 1, for example by means of screws 10 which are guided through corresponding screw holes 11.
  • the module housing 2 can also have screw holes 8, which are used for fastening in a system.
  • the power semiconductor module 1 has a number of control and auxiliary connections 13, which are connected to the control unit 12, in particular by means of a plug connection.
  • the control and auxiliary connections serve on the one hand to switch module 1 on and off and on the other hand to monitor it.
  • Module 1 also has at least two Power connections 5 and 6, which are led laterally out of the housing 2.
  • a load connection 7 is also provided. Since the control unit 12 is packed directly onto the housing 2 of the module, the connecting lines between the control and auxiliary connections 13 and the control unit can be selected to be very short and thus of low inductance.
  • the power connections 5 and 6 run parallel to a base plate 3, to which a power semiconductor switching element 4 is applied.
  • the power semiconductor switching element is in particular an IGBT chip, i.e. a bipolar transistor chip with an isolated gate.
  • FIG. 2 shows from above and FIG. 1 in section, the connection between the power electrodes and the corresponding power connections 5 and 6 can be established, for example, by means of bonding wires 9.
  • a power semiconductor module 1 is therefore basically constructed as follows: Ceramic substrates 15 are soldered to a base plate 3, for example an 8 mm thick copper plate, which can possibly also serve as a cooler.
  • the substrates are each assigned to a switching element 4. This includes, for example, at least one IGBT chip with an associated free-wheeling diode.
  • the substrates 15 are metallized over the entire surface.
  • the power connections 5, 6 and possibly 7 are supplied from the side by means of connecting lines 9, in particular by means of bond wires ("wirebonds") or soldered strips (“solder clips").
  • the connecting lines 9 lead to the corresponding power connections 5 and 6, possibly to the load connection 7 and to the control and auxiliary connections 13, which are arranged in different levels and run parallel to the base plate.
  • the power connections 5, 6 and possibly 7 are led out of the housing 2 laterally parallel to the base plate 3.
  • the auxiliary and control connections 13 can be brought out at right angles to the base plate 3.
  • the control unit 12 can be connected to these connections by simply plugging them onto the corresponding connections.
  • this power connection also serves as an electromagnetic shield. This protects the control unit 12 from the influence of the electromagnetic fields caused by the switching of the module. These fields are caused by the high currents and voltages that should be switched with the module in the shortest possible time. Without special shielding, the fields can lead to serious malfunctions of a power electronic circuit arrangement and, in addition to other influencing factors, also hinder the further development of higher switching frequencies.
  • FIG. 4 shows the equivalent circuit diagram of a half-bridge.
  • the switching elements are each at least one switch chip, here in the form of an IGBT (IGBT1, IGBT2), with an associated freewheeling diode D1, D2.
  • IGBT IGBT
  • the common node corresponds to the load connection 7
  • the plus and minus connection corresponds to the load connections 5 and 6.
  • the two IGBTs are each controlled by a gate or control connection 13.
  • Figure 5 shows such a module in section: on the base plate 3 are the substrates 15 of the switching elements 4, i.e. of the IGBTs (IGBT1, IGBT2, 4) attached.
  • the power connections 5 and 6 and the common load connection 7 are arranged in different levels and are connected to the corresponding electrodes of the semiconductor switches via the connection wires 9.
  • the two control connections 13 of the IGBTs are arranged on the same connection level.
  • the corresponding connection level e.g. by means of conductor tracks, structured so that the connections are electrically separated.
  • Insulating layers 14 must be inserted between two adjacent levels or connections. It is of course also conceivable to arrange 3 substrates and switching elements on both sides of the base plate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
EP96810191A 1995-04-14 1996-03-26 Module à semi-conducteur de puissance Expired - Lifetime EP0738008B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US422169 1995-04-14
US08/422,169 US5541453A (en) 1995-04-14 1995-04-14 Power semiconductor module

Publications (3)

Publication Number Publication Date
EP0738008A2 true EP0738008A2 (fr) 1996-10-16
EP0738008A3 EP0738008A3 (fr) 1998-12-09
EP0738008B1 EP0738008B1 (fr) 2003-06-25

Family

ID=23673682

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96810191A Expired - Lifetime EP0738008B1 (fr) 1995-04-14 1996-03-26 Module à semi-conducteur de puissance

Country Status (5)

Country Link
US (1) US5541453A (fr)
EP (1) EP0738008B1 (fr)
JP (1) JPH08288456A (fr)
CN (1) CN1089492C (fr)
DE (2) DE19529785A1 (fr)

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JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
US5748456A (en) * 1995-11-24 1998-05-05 Asea Brown Boveri Ag Power semiconductor module system
US5811878A (en) * 1996-07-09 1998-09-22 Asea Brown Boveri Ag High-power semiconductor module
US6954368B1 (en) 1996-07-22 2005-10-11 HYDRO-QUéBEC Low stray interconnection inductance power converting molecule for converting a DC voltage into an AC voltage, and a method therefor
EP1028520A1 (fr) * 1996-09-06 2000-08-16 Hitachi, Ltd. Dispositif a semi-conducteur
DE19726534A1 (de) * 1997-06-23 1998-12-24 Asea Brown Boveri Leistungshalbleitermodul mit geschlossenen Submodulen
EP0971412B1 (fr) * 1998-07-10 2013-03-13 Kabushiki Kaisha Toyota Jidoshokki Semi-conducteur à haute puissance avec circuit de protection adaptable à la serrure sur le meme
JP2001308265A (ja) * 2000-04-21 2001-11-02 Toyota Industries Corp 半導体装置
JP2001308264A (ja) * 2000-04-21 2001-11-02 Toyota Industries Corp 半導体装置
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
EP1263045A1 (fr) * 2001-06-01 2002-12-04 ABB Schweiz AG Module semi-conducteur à haute prestation
JP4363190B2 (ja) * 2004-01-08 2009-11-11 株式会社豊田自動織機 半導体装置及びその製造方法
US7791208B2 (en) * 2007-09-27 2010-09-07 Infineon Technologies Ag Power semiconductor arrangement
EP3113223A1 (fr) * 2015-07-02 2017-01-04 ABB Technology AG Module d'alimentation à semi-conducteur

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DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
US5291065A (en) * 1991-12-16 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating semiconductor device
EP0597144A1 (fr) * 1992-11-12 1994-05-18 IXYS Semiconductor GmbH Dispositif électronique de puissance en circuit hybride
US5347160A (en) * 1992-09-28 1994-09-13 Sundstrand Corporation Power semiconductor integrated circuit package

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US5541453A (en) 1996-07-30
JPH08288456A (ja) 1996-11-01
EP0738008B1 (fr) 2003-06-25
EP0738008A3 (fr) 1998-12-09
CN1089492C (zh) 2002-08-21
DE19529785A1 (de) 1996-10-17
DE59610548D1 (de) 2003-07-31
CN1142687A (zh) 1997-02-12

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