EP0730780A1 - Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe - Google Patents

Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe

Info

Publication number
EP0730780A1
EP0730780A1 EP94905336A EP94905336A EP0730780A1 EP 0730780 A1 EP0730780 A1 EP 0730780A1 EP 94905336 A EP94905336 A EP 94905336A EP 94905336 A EP94905336 A EP 94905336A EP 0730780 A1 EP0730780 A1 EP 0730780A1
Authority
EP
European Patent Office
Prior art keywords
cathode
recited
emission
emission sites
diamond film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP94905336A
Other languages
German (de)
English (en)
Other versions
EP0730780A4 (fr
Inventor
Nalin Kumar
Chenggang Xie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microelectronics and Computer Technology Corp
Original Assignee
Microelectronics and Computer Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microelectronics and Computer Technology Corp filed Critical Microelectronics and Computer Technology Corp
Publication of EP0730780A4 publication Critical patent/EP0730780A4/fr
Publication of EP0730780A1 publication Critical patent/EP0730780A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/04—Electrodes; Screens; Shields
    • H01J61/06—Main electrodes
    • H01J61/067—Main electrodes for low-pressure discharge lamps
    • H01J61/0675—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode
    • H01J61/0677—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode characterised by the electron emissive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/06—Lamps with luminescent screen excited by the ray or stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members

Definitions

  • This invention relates, in general, to flat field emission cathodes and, more particularly, to such cathodes which employ an amorphic diamond film having a plurality of emission sites situated on a flat emission surface.
  • Field emission is a phenomenon which occurs when an electric field proximate the surface of an emission material narrows a width of a potential barrier existing at the surface of the emission material. This allows a quantum tunnelling effect to occur, whereby electrons cross through the potential barrier and are emitted from the material. This is as opposed to thermionic emission, whereby thermal energy within an emission material is sufficient to eject electrons from the material.
  • Thermionic emission is a classical phenomenon, whereas field emission is a quantum mechanical phenomenon.
  • the field strength required to initiate field emission of electrons from the surface of a particular material depends upon that material's effective "work function.” Many materials have a positive work function and thus require a relatively intense electric field to bring about field emission. Some materials do, in fact, have a low work function, or even a negative electron affinity, and thus do not require intense fields for emission to occur. Such materials may be deposited as a thin film onto a conductor, resulting in a cathode with a relatively low threshold voltage required to produce electron emissions.
  • micro-tip cathode In prior art devices, it was desirable to enhance field emission of electrons by providing for a cathode geometry which focussed electron emission at a single, relatively sharp point at a tip of a conical cathode (called a micro-tip cathode). These micro-tip cathodes, in conjunction with extraction grids proximate the cathodes, have been in use for years in field emission displays.
  • U.S. Patent No. 4,857,799 which issued on August 15, 1989, to Spindt et al., is directed to a matrix-addressed flat panel display using field emission cathodes.
  • the cathodes are incorporated into the display backing structure, and energize corresponding cathodoluminescent areas on a face plate.
  • the face plate is spaced 40 microns from the cathode arrangement in the preferred embodiment, and a vacuum is provided in the space between the plate and cathodes. Spacers in the form of legs interspersed among the pixels maintain the spacing, and electrical connections for the bases of the cathodes are diffused sections through the backing structure.
  • the display described in Spindt et al. is a triode (three terminal) display.
  • micro-tips employ a structure which is difficult to manufacture, since the micro-tips have fine geometries. Unless the micro-tips have a consistent geometry throughout the display, variations in emission from tip to tip will occur, resulting in unevenness in illumination of the display. Furthermore, since manufacturing tolerances are relatively tight, such micro-tip displays are expensive to make.
  • a metal adsorbent deposited on the tip so prepared results in a field emitter tip having substantially improved emission characteristics.
  • Such micro-tip cathodes are expensive to produce due to their fine geometries.
  • emission occurs from a relatively sharp tip, emission is still somewhat inconsistent from one cathode to another.
  • Such disadvantages become intolerable when many cathodes are employed in great numbers such as in a flat panel display for a computer.
  • an important attribute of good cathode design is to minimize the work function of the material constituting the cathode.
  • some substances such as alkali metals and elemental carbon in the form of diamond crystals display a low effective work function.
  • Many inventions have been directed to finding suitable geometries for cathodes employing negative electron affinity substances as a coating for the cathode.
  • U.S. Patent No. 3,970,887 which issued on July 20, 1976, to Smith et al., is directed to a microminiature field emission electron source and method of manufacturing the same wherein a single crystal semiconductor substrate is processed in accordance with known integrated microelectronic circuit techniques to produce a plurality of integral, single crystal semiconductor raised field emitter tips at desired field emission cathode sites on the surface of a substrate in a manner such that the field emitters tips are integral with the single crystal semiconductor substrate.
  • An insulating layer and overlying conductive layer may be formed in the order named over the semiconductor substrate and provided with openings at the field emission locations to form micro-anode structures for the field emitter tip.
  • U.S. Patent No. 4,685,996, which issued on August 11, 1987, to Busta et al., is also directed to a method of making a field emitter and includes an anisotropically etched single crystal silicon substrate to form at least one funnel-shaped protrusion on the substrate.
  • the method of manufacturing disclosed in Busta et al. provides for a sharp-tipped cathode.
  • Gray et al. disclose a process for fabricating soft-aligned field emitter arrays using a soft-leveling planarization technique, e.g. a spin-on process.
  • sharp-tipped cathodes have fundamental problems when employed in a flat panel graphic display environment, as briefly mentioned above.
  • the manufacturing of cathodes must be made more reliable so as to minimize the problem of inconsistencies in brightness in the display along its surface.
  • Serial No. 07/851,701 which was filed on March 16, 1992, and entitled “Flat Panel Display Based on Diamond Thin Films,” an alternative cathode structure was first disclosed.
  • Serial No. 07/851,701 discloses a cathode having a relatively flat emission surface as opposed to the aforementioned micro-tip configuration.
  • the cathode in its preferred embodiment, employs a field emission material having a relatively low effective work function. The material is deposited over a conductive layer and forms a plurality of emission sites, each of which can field-emit electrons in the presence of a relatively low intensity electric field.
  • amorphic diamond comprises a plurality of micro- crystallites, each of which has a particular structure dependent upon the method of preparation of the film. The manner in which these micro-crystallites are formed and their particular properties are not entirely understood.
  • Diamond has a negative election affinity. That is, only a relatively low electric field is required to distort the potential barrier present at the surface of diamond. Thus, diamond is a very desirable material for use in conjunction with field emission cathodes. In fact, the prior art has employed crystalline diamond films to advantage as an emission surface on micro-tip cathodes.
  • a direct electron emission imaging technique has shown that the total externally recorded current stems from a high density of individual emission sites randomly distributed over the cathode surface.
  • the observed characteristics have been qualitatively explained by a new hot-electron emission mechanism involving a two-stage switch-on process associated with a metal-insulator-metal-insulator-vacuum (MIMIV) emitting regime.
  • MIMIV metal-insulator-metal-insulator-vacuum
  • the mixing of the graphite powder into a resin compound results in larger grains, which results in fewer emission sites since the number of particles per unit area is small. It is preferred that a larger amount of sites be produced to produce a more uniform brightness from a low voltage source.
  • the prior art has failed to: (1) take advantage of the unique properties of amorphic diamond; (2) provide for field emission cathodes having a more diffused area from which field emission can occur; and (3) provide for a high enough concentration of emission sites (i.e., smaller particles or crystallites) to produce a more uniform electron emission from each cathode site, yet require a low voltage source in order to produce the required field for the electron emissions.
  • amorphic diamond which has physical qualities which differ substantially from other forms of diamond, makes a particularly good emission material.
  • Serial No. 07/851,701 was the first to disclose use of amorphic diamond film as an emission material.
  • amorphic diamond film was used in conjunction with a flat cathode structure to result in a radically different field emission cathode design.
  • the present invention takes the utilization of amorphic diamond a step further by depositing the amorphic diamond in such a manner so that a plurality of diamond micro-crystallite regions are deposited upon the cathode surface such that at each region (pixel) there are a certain percentage of the crystals emerging in an SP* configuration and another percentage of the crystals emerging in an SP 3 configuration.
  • the numerous SP and SP 3 configurations at each region result in numerous discontinuities or interface boundaries between the configurations, with the SP ⁇ and SP° crystallites having different electron affinities.
  • an independently addressable cathode comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material, the amorphic diamond film comprising a plurality of distributed localized electron emission sites,, each sub-site having a plurality of sub-regions with differing electron affinities between sub-regions.
  • the amorphic diamond film is deposited as a relatively flat emission surface.
  • Flat cathodes are easier and, therefore, less expensive to manufacture and, during operation of the display, are easier to control emission therefrom.
  • a technical advantage of the present invention is to provide a cathode wherein emission sites have electrical properties which include discontinuous boundaries with differing electron affinities.
  • Another technical advantage of the present invention is to provide a cathode wherein emission sites contain dopant atoms.
  • Yet another technical advantage of the present invention is to provide a cathode wherein a dopant atom is carbon.
  • Yet a further technical advantage of the present invention is to provide a cathode wherein emission sites each have a plurality of bonding structures.
  • Still yet another technical advantage of the present invention is to provide a cathode wherein one bonding structure at an emission site is SP 3 .
  • Still a further technical advantage of the present invention is to provide a cathode wherein each emission site has a plurality of bonding orders, one of which is SP 3 .
  • Another technical advantage of the present invention is to provide a cathode wherein emission sites contain dopants of an element different from a low effective work-function material. In the case of use of amorphic diamond as the low effective work- function material, the dopant element is other than carbon.
  • Still another technical advantage of the present invention is to provide a cathode wherein emission sites contain discontinuities in crystalline structure.
  • the discontinuities are either point defects, line defects or dislocations.
  • the present invention further includes novel methods of operation for a flat panel display and use of amorphic diamond as a coating on an emissive wire screen and as an element within a cold cathode fluorescent lamp.
  • the preferred embodiment of the present invention is an amorphic diamond film cold-cathode comprising a substrate, a layer of conductive material, an electronically resistive pillar deposited over the substrate and a layer of amorphic diamond film deposited over the conductive material, the amorphic diamond film having a relatively flat emission surface comprising a plurality of distributed micro-crystallite electron emission sites having differing electron affinities.
  • FIGURE 1 is a cross-sectional representation of the cathode and substrate of the present invention
  • FIGURE 2 is a top view of the cathode of the present invention including emission sites;
  • FIGURE 3 is a more detailed representation of the emission sites of FIGURE 2;
  • FIGURE 4 is a cross-sectional view of a flat panel display employing the cathode of the present invention.
  • FIGURE 5 is a representation of a coated wire matrix emitter
  • FIGURE 6 is a cross-sectional view of a coated wire
  • FIGURE 7 is a side view of a florescent tube employing the coated wire of FIGURE 6;
  • FIGURE 8 is a partial section end view of the fluorescent tube of FIGURE 7;
  • FIGURE 9 is a computer with a flat-panel display that incorporates the present invention.
  • FIGURE 1 shown is a cross- sectional representation of the cathode and substrate of the present invention.
  • the cathode generally designated 10, comprises a resistive layer 11, a low effective work-function emitter layer 12 and an intermediate metal layer 13.
  • the cathode 10 sits on a cathode conductive layer 14 which, itself, sits on a substrate 15.
  • the structure and function of the layers 11, 12, 13 of the cathode 10 and the relationship of the cathode 10 to conductive layer 14 and substrate 15 are described in detail in related application Serial No. 07/851,701, which is incorporated herein by reference.
  • FIGURE 2 shown is a top view of the cathode 10 of FIGURE 1.
  • the emitter layer 12 is, in the preferred embodiment of the present invention, amorphic diamond film comprising a plurality of diamond micro-crystallites in an overall amorphic structure.
  • micro-crystallites result when the amorphic diamond material is deposited on the metal layer 13 by means of laser plasma deposition, chemical vapor deposition, ion beam deposition, sputtering, low temperature deposition (less than 500 degrees Centigrade), evaporation, cathodic arc evaporation, magnetically separated cathodic arc evaporation, laser acoustic wave deposition or similar techniques or a combination of the above whereby the amorphic diamond film is deposited as a plurality of micro-crystallites.
  • laser plasma deposition chemical vapor deposition, ion beam deposition, sputtering, low temperature deposition (less than 500 degrees Centigrade), evaporation, cathodic arc evaporation, magnetically separated cathodic arc evaporation, laser acoustic wave deposition or similar techniques or a combination of the above whereby the amorphic diamond film is deposited as a plurality of micro-crystallites.
  • micro-crystallites form with certain atomic structures which depend on environmental conditions during deposition and somewhat on chance. At a given environmental pressure and temperature, a certain percentage of crystals will emerge in an SP *4 (two-dimensional bonding of carbon atoms) configuration. A somewhat smaller percentage, however, will emerge in an SP (three-dimensional bonding) configuration.
  • SP *4 two-dimensional bonding of carbon atoms
  • SP three-dimensional bonding
  • micro-crystallites in the SP 3 configuration have a lower electron affinity, making them "emission sites.” These emission sites (or micro-crystallites with an SP 3 configuration) are represented in FIGURE 2 as a plurality of black spots in the emitter layer 12.
  • the flat surface is essentially a microscopically flat surface.
  • a particular type of surface morphology is not required. But, small features typical of any polycrystalline thin film may improve emission characteristics because of an increase in enhancement factor. Certain micro-tip geometries may result in a larger enhancement factor and, in fact, the present invention could be used in a micro-tip or "peaked" structure.
  • FIGURE 3 shown is a more detailed view of the micro-crystallites of FIGURE 2. Shown is a plurality of micro-crystallites 31, 32, 33, 34, for example. Micro-crystallites 31, 32, 33 are shown as having an SP 2 configuration. Micro-crystallite 34 is shown as having an SP J configuration. As can be seen in FIGURE 3, micro-crystallite 34 is surrounded by micro-crystallites having an SP configuration.
  • emission sites There are a very large number of randomly distributed localized emission sites per unit area of the surface. These emission sites are characterized by different electronic properties of that location from the rest of the film. This may be due to one or a combination of the following conditions:
  • micro-crystallites One of the above conditions for creating differences in micro-crystallites is doping. Doping of amorphic diamond thin film can be accomplished by interjecting elemental carbon into the diamond as it is being deposited. When doping with carbon, micro- crystallites of different structures will be created statistically. Some micro-crystallites will be n-type. Alternatively, a non-carbon dopant atom could be used, depending upon the desired percentage and characteristics of emission sites. Fortunately, in the flat panel display environment, cathodes with as few as 1 emission site will function adequately. However, for optimal functioning, 1 to 10 n-type micro-crystallites per square micron are desired. And, in fact, the present invention results in micro-crystallites less than 1 micron in diameter, commonly 0.1 micron.
  • Emission from the cathode 10 of FIGURE 1 occurs when a potential difference is impressed between the cathode 10 and an anode (not shown in FIGURE 1) which is separated by some small distance from the cathode 10. Upon impression of this potential, electrons are caused to migrate to the emission layer 12 of the cathode 10.
  • the condition that will be assumed to exist to create micro-crystallites of different work function will be a change in the bonding structure from SP 2 to SP 3 in the same micro- crystallite (condition 3 above).
  • micro- crystallites having an SP° * . configuration have a lower work-function and electron affinity than micro- crystallites having an SP configuration. Therefore, as voltage is increased between the cathode 10 and anode (not shown), the voltage will reach a point at which the SP 3 micro-crystallites will begin to emit electrons. If the percentage of SP 3 micro-crystallites on the surface of the cathode 10 is sufficiently high,
  • FIGURE 4 shown is a cross- sectional view of a flat panel display employing the ' cathode of the present invention.
  • the cathode 10 still residing on its cathode conductive layer 14 and substrate 15 as in FIGURE 1, has been mated to an anode, generally designated 41 and comprising a substrate 42, which in the preferred embodiment is glass.
  • the substrate 42 has an anode conductive layer 43 which, in the preferred embodiment, is an indium tin oxide layer.
  • a phosphor layer 44 is deposited on the anode conductive layer to provide a visual indication of electron flow from the cathode 10.
  • FIGURE 4 represented is a voltage source 47 comprising a positive pole 48 and a negative pole 49.
  • the positive pole is coupled from the source 47 to the anode conductive layer 43, while the negative pole 49 is coupled from the source 47 to the cathode conductive layer 14.
  • the device 47 impresses a potential difference between the cathode 10 and the anode 41, causing electron flow to occur between the cathode 10 and the anode 41 if the voltage impressed by the source 47 is sufficiently high.
  • FIGURE 9 there is illustrated computer 90 with associated keyboard 93, disk drive 94, hardware 92 and display 91.
  • the present invention may be employed within display 91 as a means for providing images and text. All that is visible of the present invention is anode 41.
  • FIGURE 5 shown is a representation of a coated wire matrix emitter in the form of a wire mesh, generally designated 51.
  • the wire mesh 51 comprises a plurality of rows and columns of wire which are electrically joined at their intersection points.
  • the wire mesh 51 is then coated with a material having a low effective work-function and electron affinity, such as amorphic diamond, to thereby produce a wire mesh cathode for use in devices which previously used an uncoated wire or plate cathode and application of a high current and potential difference to produce incandescence and a flow of electrons from the mesh to an anode.
  • amorphic diamond coating and its associated lower work function incandescence is no longer necessary. Therefore, the wire mesh 51 cathode can be used at room temperature to emit electrons.
  • FIGURE 6 shown is a cross-section of a wire which has been coated with a material having a low work-function and electron affinity.
  • the wire designated 61, has a coating 62 which has been deposited by laser plasma deposition, or any one of the other well-known techniques listed above to thereby permit the coating 62 to act as a cold cathode in the same manner as the cathodes described in FIGURES 1-5.
  • FIGURE 7 shown is one application of the wire 61 in which the coated wire 61 functions as a conductive filament and is surrounded by a glass tube 72, functioning as an anode and which has an electrical contact 73 to thereby produce a fluorescent tube.
  • the tube functions in a manner which is analogous to the flat panel display application discussed in connection with FIGURES 1-5, that is, a potential difference is impressed between the wire 61 (negative) and the tube 72 sufficient to overcome the space-charge between the cathode wire 61 and the tube anode 72. Once the space- charge has been overcome, electrons will flow from
  • FIGURE 8 shown is a partial section end view of the florescent tube 71 of FIGURE 7. Shown again are the wire 61 and the coating 62 of FIGURE 6 which, together, form a low effective work- function cathode in the fluorescent tube 71.
  • the glass tube 72 of FIGURE 7 comprises a glass wall 81 on which is coated an anode conductive layer 82.
  • the anode conductive layer 82 is electrically coupled to the electrical contact 73 of FIGURE 7.
  • a phosphor layer 83 is deposited on the anode conductive layer 82.

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

Une cathode à émission de champ comprend une couche de matériau conducteur (14) et une pellicule de diamant amorphe (12), jouant le rôle d'un matériau à faible énergie d'extraction, déposée sur le matériau conducteur pour former des sites d'émission. Les sites d'émission contiennent chacun au moins deux sous-zones présentant des affinités électroniques différentes.
EP94905336A 1993-06-02 1993-12-06 Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe Withdrawn EP0730780A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7115793A 1993-06-02 1993-06-02
US71157 1993-06-02
PCT/US1993/011845 WO1994028571A1 (fr) 1993-06-02 1993-12-06 Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe

Publications (2)

Publication Number Publication Date
EP0730780A4 EP0730780A4 (fr) 1996-07-22
EP0730780A1 true EP0730780A1 (fr) 1996-09-11

Family

ID=22099619

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94905336A Withdrawn EP0730780A1 (fr) 1993-06-02 1993-12-06 Cathode plate a emission de champ pourvue d'une pellicule de diamant amorphe

Country Status (6)

Country Link
EP (1) EP0730780A1 (fr)
JP (1) JPH08510858A (fr)
KR (1) KR100307042B1 (fr)
AU (1) AU5897594A (fr)
CA (1) CA2164294A1 (fr)
WO (1) WO1994028571A1 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995012835A1 (fr) * 1993-11-04 1995-05-11 Microelectronics And Computer Technology Corporation Procedes de fabrication de systemes et composants d'affichage a ecran plat
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
EP0675519A1 (fr) * 1994-03-30 1995-10-04 AT&T Corp. Appareil comprenant des émetteurs à effet de champ
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
GB9502435D0 (en) * 1995-02-08 1995-03-29 Smiths Industries Plc Displays
DE19515596A1 (de) * 1995-05-02 1996-11-07 Philips Patentverwaltung Elektrische Entladungsröhre oder Entladungslampe, Flachbildschirm, Niedertemperaturkathode und Verfahren zu deren Herstellung
AU6626096A (en) * 1995-08-04 1997-03-05 Printable Field Emitters Limited Field electron emission materials and devices
US5982095A (en) * 1995-09-19 1999-11-09 Lucent Technologies Inc. Plasma displays having electrodes of low-electron affinity materials
WO1997018576A1 (fr) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Emetteurs de champ en poudres de diamant et cathodes d'emission de champ produites a partir de ces poudres
CA2234429A1 (fr) 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Emetteurs de champ en suie de charbon recuite et cathodes d'emission de champ produites a partir de ce materiau
DE69604931T2 (de) * 1995-11-15 2000-05-18 E.I. Du Pont De Nemours And Co., Wilmington Verfahren zur herstellung einer feldemissionskathode mittels eines teilchenförmigen feldemissionsmaterial
DE69703962T2 (de) * 1996-03-27 2001-09-13 Akimitsu Hatta Elektronenemittierende Vorrichtung
US5880559A (en) * 1996-06-01 1999-03-09 Smiths Industries Public Limited Company Electrodes and lamps
EP0932909B1 (fr) * 1996-10-17 2004-09-22 E.I. Du Pont De Nemours And Company Procede de connexion d'emetteurs de champ en fibres et cathodes emettrices de champ fabriquees a partir desdits emetteurs
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
EP0970499A1 (fr) 1997-03-25 2000-01-12 E.I. Du Pont De Nemours And Company Structures de plaque arriere cathodique a emission de champ destinees a des panneaux d'affichage
DE69816604T2 (de) 1997-04-02 2004-06-09 E.I. Du Pont De Nemours And Co., Wilmington Metall-kohlenstoff-sauerstoff-feldemissionsanordnungen
CA2229290A1 (fr) * 1997-05-16 1998-11-16 John T. Jankowski Electrode de lampe a decharge
US6181056B1 (en) * 1997-10-21 2001-01-30 Si Diamond Technology, Inc. Cold cathode carbon film
US6409567B1 (en) 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
CN1281586A (zh) 1997-12-15 2001-01-24 纳幕尔杜邦公司 离子轰击式石墨电子发射体
JP2002509339A (ja) 1997-12-15 2002-03-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 被覆ワイヤーのイオン衝撃された黒鉛電子エミッタ
DE69920171T2 (de) * 1998-11-30 2005-09-29 Philips Intellectual Property & Standards Gmbh Entladungslampe
EP1061554A1 (fr) * 1999-06-15 2000-12-20 Iljin Nanotech Co., Ltd. Source de lumière blanche à nanotubes de carbone et procédé de fabrication
JP2001052652A (ja) * 1999-06-18 2001-02-23 Cheol Jin Lee 白色光源及びその製造方法
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US7276844B2 (en) 2001-06-15 2007-10-02 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US7317277B2 (en) 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
JP4594134B2 (ja) * 2005-03-08 2010-12-08 株式会社ピュアロンジャパン 電界放出真空管
US8252165B2 (en) 2008-08-22 2012-08-28 E I Du Pont De Nemours And Company Method for the electrochemical deposition of carbon nanotubes
US8414757B2 (en) 2009-02-27 2013-04-09 E I Du Pont De Nemours And Company Process for improving the oxidation resistance of carbon nanotubes
TWI456625B (zh) * 2011-01-06 2014-10-11 Tatung Co 場發射燈
EP3933881A1 (fr) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG Source de rayons x à plusieurs réseaux

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180951A (en) * 1992-02-05 1993-01-19 Motorola, Inc. Electron device electron source including a polycrystalline diamond
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
EP0609532A1 (fr) * 1993-02-01 1994-08-10 Motorola, Inc. Emetteur d'électrons

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524162A (en) * 1975-06-27 1977-01-13 Hitachi Ltd Electric field radiation cathode and its manufacturing method
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
JPH07116430B2 (ja) * 1987-04-07 1995-12-13 日亜化学工業株式会社 長残光性青色発光混合物螢光体
JPH02138469A (ja) * 1988-11-16 1990-05-28 Hitachi Ltd ダイアモンド表面を有する真空用材料、この真空用材料の表面処理法、ダイアモンド膜表面の作製法、真空用材料を用いた真空容器とその部品，真空内駆動機構，電子放出源，真空内ヒータおよび蒸着源容器
JP2923980B2 (ja) * 1989-07-12 1999-07-26 松下電器産業株式会社 電界放出型冷陰極の製造方法
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
JP3085407B2 (ja) * 1991-03-08 2000-09-11 キヤノン株式会社 半導体電子放出素子
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5180951A (en) * 1992-02-05 1993-01-19 Motorola, Inc. Electron device electron source including a polycrystalline diamond
EP0609532A1 (fr) * 1993-02-01 1994-08-10 Motorola, Inc. Emetteur d'électrons

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO9428571A1 *
WANG C ET AL: "COLD FIELD EMISSION FROM CVD DIAMOND FILMS OBSERVED IN EMISSION ELECTRON MICROSCOPY" 1 August 1991 , ELECTRONICS LETTERS, VOL. 27, NR. 16, PAGE(S) 1459 - 1461 XP000259873 *

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EP0730780A4 (fr) 1996-07-22
CA2164294A1 (fr) 1994-12-08
KR960702937A (ko) 1996-05-23
JPH08510858A (ja) 1996-11-12
KR100307042B1 (ko) 2001-12-17
AU5897594A (en) 1994-12-20
WO1994028571A1 (fr) 1994-12-08

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