Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
  • H01J9/02—Manufacture of electrodes or electrode systems
  • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
  • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
  • H01J3/02—Electron guns
  • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
  • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type

Definitions

• the invention relates to an electron source and its production method.
• the invention applies to the field of field effect microcathodes and it makes it possible to obtain, over the entire surface of the devices in question, an electronic emission consisting of parallel beams coming from each microtip.
• the invention consists of the interposition of a second electrode, coplanar with the gate electrode, the polarity of which is adapted so as to allow the focusing of each microbeam.
• Figure la shows the block diagram of a field effect microcathode. Due to the small dimensions of g the basic structure, it is possible to group together some 10 elements identical to that of FIG. 1a per cm 2 (see FIG. 1b), which can have advantages for the manufacture of electron guns in particular.
• One of the drawbacks of this type of microcathode however lies in the large opening of the beam emitted at each point.
• Figure 2 shows this situation schematically. Because of this large opening at each microtip, it appears extremely difficult to be able to focus (see Figure 3) or process the electron beams emitted from a network of such microcathodes, which limits their practical interest.
• FIG. 1a In order to solve this problem, it has been proposed to add to the structure of FIG. 1a a second gate electrode situated above the first and brought to a lower potential, so as to make parallel (with a few aberrations) the beam extracted from each microtip (see Figure 4). In this way, it is possible to envisage focusing all of the beams emitted by a network of microcathodes, using conventional electronic optics (see FIG. 5).
• the second electrode is superimposed on the extraction grid and insulated by a second dielectric D2 which must substantially have a thickness equivalent to the grid dielectric Dl taking into account the focusing voltages likely to be used.
• the invention therefore relates to an electron source comprising on a substrate a dielectric layer comprising at least one cavity in which is located a protruding cathode electrode, a first gate electrode being located on the upper face of the dielectric layer. and at least partially surrounding the cavity, characterized in that it comprises at least a second grid electrode situated on the same side as the first grid electrode by relative to the upper face of the dielectric layer, the first gate electrode being located between the cavity and the second gate electrode.
• the invention also relates to a method for producing electron sources, characterized in that at least one layer of dielectric material is deposited on a substrate that at least one cavity is etched in the deposited layer, and that a cathode electrode protruding at the bottom of each cavity is formed by growth on the substrate, a first grid electrode being formed on the layer of dielectric material around each cavity and a second grid electrode being formed around the first electrode grid.
• the use of a focusing electrode is no longer superimposed on the gate electrode as in FIGS. 4 or 6, but electrodes coplanar, as shown in Figure 7.
• the coplanar electrodes are the gate electrodes VG1 and VG2 located on the dielectric layer and surrounding the cavity CA in which is located a microcathode MP.
• the grid VG1 serves as an electron extraction grid and the grid VG2, as the localization grid.
• the second gate electrode VG2 partially surrounds the first gate electrode VG1. According to another variant, the second gate electrode VG2 entirely surrounds the cavity assembly CA and the first electrode VG1.
• a substrate 1 typically of silicon (100) or (111) on which a layer 2 of Si beau 4 (0.1 ⁇ m thick) is successively deposited, a layer 3 of Si0 tone ⁇ 1 ⁇ m of thickness) and a layer 4 of highly doped polycrystalline silicon (some 10 ohm. cm) with small grains, that is to say obtained by a CVD (Chemical Vapor Deposition) process at low temperature (and therefore preferably at reduced pressure , typically in the range of 10 - 300 tor s).
• CVD Chemical Vapor Deposition
• FIG. 8a The layers shown in FIG. 8a are obtained. Note that we can also use as starting substrate a silicon wafer type SOI (Silicon o Insulation) obtained by a SIMOX type process (by practicing a double ion implantation of nitrogen, then oxygen) or else by a liquid crystallization process (for details on these different processes, one can consult IEEE Circuit and De vice Magazine, volumes 3 and 4, July and November 1987).
• SOI Silicon o Insulation
• FIGS. 8b and 8c The pattern shown in FIGS. 8b and 8c is etched into the layer 4 of silicon on insulator 3 in section and in view of above . This will be the only masking step in the process (see below). An etching is thus carried out of at least a first opening H01 in the layer of semiconductor or conductive material 4 and of a second opening H02 surrounding the first opening H01, the width of the etching of the first opening being greater than that of the engraving of the second opening. Note that this is not submicr ⁇ nic etching and therefore the prior lithography operation can be done optically
• a variant shown in In Figure 8f consists in using a thicker starting silicon layer (for example 1 ⁇ .m) and in directly carrying out a submicron etching (etching of 0.5 ⁇ m for example) at the places where one wishes that the two oxidation fronts meet.
• a structure similar to that of FIG. 8e is obtained after oxidation.
• the disadvantage is the obligation to use the electronic masking step associated with obtaining submicron patterns (gravtzres of 0.5 ⁇ m); on the other hand, it is thus possible to avoid the selective epitaxy step of FIG. 8d.
• a reactive ion etching (RIE) operation is then carried out using the Si0 2 previously formed as a mask. The engraving is stopped when poly-Si pavers become visible ( Figure 8g).
• the Si substrate protected by the Si-N- layer is not oxidized during this treatment.
• the Si, 4 is eliminated in the housings (P ar selective attack with K PO, for example), so as to expose the Si substrate locally (FIG. 8j).
• this epitaxy can be carried out in a MOCVD reactor (Metalorganic Chemical Vapor Deposition: Epitaxy in the vapor phase of organometallic). reduced pressure.
• MOCVD reactor Metalorganic Chemical Vapor Deposition: Epitaxy in the vapor phase of organometallic. reduced pressure.
• this growth can be done by selective epitaxy in a CVD reactor at a temperature between 900 and 1100 ° C. using a gas mixture comprising SiH. + HC1 or SiH StudCL + HC1 in the carrier hydrogen.
• this selective epitaxy can be carried out between 600 and 800 ° C. in a VPE reactor using a gas mixture comprising AsC diluted in H 2 and a source of solid gallium.
• the passivation SiO 2 is then eliminated, so as to obtain the structure shown in FIG. 9 where the necessary polarizations are also indicated.
• a liquid resin (like photoresist) is then deposited, the operation possibly being preceded by a surface-active treatment (using a "primer") in order to allow the resin to penetrate well into the micrologations (figure 12b).
• This resin is then polymerized at 70 - 120 ° C depending on the type.
• the resin is then etched in an oxygen-based plasma, so as to eliminate it from the upper part of the device, but keeping it in the micrologations, so as to protect the gold film in contact with the substrate (Figure 12c).
• the gold from the upper part of the device is removed (using a solution I Rhein/ KI for example), the film in contact with the substrate (and masked by the resin) being protected (FIG. 12d).
• a second masking is carried out so as to eliminate this oxide on the VG2 type pads (see FIGS. 10b).
• this masking operation is not particularly delicate, since it does not require precise alignment. It suffices that the two VG1 pads adjacent to the VG2 type pads are masked. The border of the mask can fall anywhere on the silica separating the studs VG2 and VGl.
• a second selective epitaxy operation is carried out (as described in relation to FIG. 8d) so as to obtain the structure shown in Figure 10c.
• the upper plane of the VG2 type pad is raised relative to the upper plane of the VG1 type pads.
• lateral growth of VG2 was obtained during this operation, equivalent to vertical growth (0.5 ⁇ m in FIG. 10c).
• the silica is then removed from the upper part located between the pads VG1 and VG2 while practicing the operation of formation of the micrologations (FIG. 10).
• FIGS 9 and 11 also show examples of electrical assemblies of the device according to the invention.
• the device of FIG. 11 has been supplemented by an anode A dispersed opposite microtips such as MP.
• An emission of electrons can therefore take place between a MP microtip and anode A.
• one or more sources of voltages apply determined potentials to a micropoint MP a grid VG1, a grid VG2 and to the anode ⁇ .
• the potential bolts are respectively the following;
• - VGl grid potential greater than the VR reference potential
• - VG2 grid potential lower than the VR reference potential
• a focused beam was also obtained as shown in FIG. 13b with the following conditions: - micropoint MP: 0 volts

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• Cold Cathode And The Manufacture (AREA)

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• 1990
  • 1990-11-16 FR FR9014287A patent/FR2669465B1/fr not_active Expired - Fee Related
• 1991
  • 1991-11-15 JP JP04500424A patent/JP3107818B2/ja not_active Expired - Fee Related
  • 1991-11-15 EP EP91920863A patent/EP0511360B1/de not_active Expired - Lifetime
  • 1991-11-15 WO PCT/FR1991/000903 patent/WO1992009095A1/fr active IP Right Grant
  • 1991-11-15 DE DE69116859T patent/DE69116859T2/de not_active Expired - Fee Related
• 1995
  • 1995-06-02 US US08/458,821 patent/US5581146A/en not_active Expired - Lifetime

Non-Patent Citations (1)

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