EP0423154A1 - Verfahren und vorrichtung zur untersuchung von strukturen auf membranoberflächen. - Google Patents
Verfahren und vorrichtung zur untersuchung von strukturen auf membranoberflächen.Info
- Publication number
- EP0423154A1 EP0423154A1 EP89906719A EP89906719A EP0423154A1 EP 0423154 A1 EP0423154 A1 EP 0423154A1 EP 89906719 A EP89906719 A EP 89906719A EP 89906719 A EP89906719 A EP 89906719A EP 0423154 A1 EP0423154 A1 EP 0423154A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- membrane
- angle
- sample holder
- primary
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000010894 electron beam technology Methods 0.000 claims abstract description 24
- 230000000717 retained effect Effects 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 241000100287 Membras Species 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000001420 photoelectron spectroscopy Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 abstract description 34
- 238000004458 analytical method Methods 0.000 abstract description 4
- 238000000426 electronic spectroscopy Methods 0.000 abstract 1
- 238000002272 high-resolution X-ray photoelectron spectroscopy Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 16
- 230000005855 radiation Effects 0.000 description 8
- 238000001941 electron spectroscopy Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004275 electron-induced Auger electron spectroscopy Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
- G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
Definitions
- the invention relates to a method and a device for examining structures with widths of a few micrometers on membrane surfaces.
- Electron spectroscopy has proven itself in practice for surface analysis.
- the basic structure of apparatus for electron spectroscopy is described in the publication by Wannberg, B., Gelius, U. and Siegbahn, K. "Design principles in electron spectroscopy” in Journal of Physics E, Vol. 7 (1974) p. 149 -159.
- the electrons can be generated with an X-ray source, or with a UV light source or with a primary electron beam on the sample surface.
- the surface analysis of microstructures is usually carried out because of the good focusability of electron beams with the aid of the Auger effect (electron-induced Auger Electron Spectroscopy, e ⁇ AES).
- Auger effect electron-induced Auger Electron Spectroscopy, e ⁇ AES.
- the disadvantages of this The method is that the structure to be examined is exposed to high loads, which causes numerous radiation damage in the sample and that it cannot be applied to insulating substances.
- the resolving power of the XPS method can be improved in that the X-rays are generated in a spatially very limited area.
- a primary electron beam is focused on the back of a membrane, which releases X-rays in the membrane.
- the released X-rays that emerge on the front of the membrane represent a spatially limited X-ray source.
- thin membranes (a few micrometers) must be used in this procedure.
- the local X-ray sources locally release photoelectrons on the membrane surface, which are analyzed with the aid of spectrometers. Because of the small exit depth of the photoelectrons, only the uppermost atomic layers are detected.
- the object of the invention is to further develop the high-resolution XPS method so that it can be used in commercial Auger probes.
- This object is achieved in that the XPS method is further developed such that the primary electron beam strikes the back of the membrane at a predeterminable first angle and observes the secondary photoelectrons emerging from the front of the membrane at a predeterminable second angle become.
- Another object of the invention is to develop a commercial Auger probe so that it is suitable for carrying out the method according to the invention.
- sample holder that has a channel that has an inlet panel on the inlet side is provided and on the output side of the membrane with the structures to be examined is attached.
- the sample according to claim 2 can be held so that the microstructure to be examined lies on the membrane surface approximately in the bisector between the incident electron beam and the spectrometer axis. This maintains the beam geometry of the Auger arrangement.
- An advantageous embodiment of the method is characterized in claim 3.
- the method is carried out in such a way that the secondary electrons emitted from the back of the membrane are retained so that they cannot hit the spectrometer.
- the energy of the electrons of the primary beam is reduced to such an extent that neither scattered nor unscattered electrons penetrate the membrane. This means that no electrons from the primary beam emerge from the front of the membrane, which could falsify the measurement result. This also ensures that only excitation by X-rays and not by electrons can take place on the sample surface.
- the method is also very suitable for generating a conventional electron raster image (SEM image).
- SEM image electron raster image
- a particularly suitable device for performing the method is characterized.
- the sample holder has a channel that acts as a Faraday cage, which retains the electrons emerging from the back of the membrane.
- the sample lies in the bisector of the angle between the incident electron beam and the spectrometer axis.
- the arrangement of electron source and spectrometer common in Auger apparatus can be maintained.
- the angle corresponding to the angle between the incident electron beam and the spectrometer axis is 60 °.
- the sample holder is rotatable about an axis that halves the angle between the two surfaces in which the channel openings lie.
- the angle of incidence and the direction of observation can be optimized by tilting the sample holder.
- at least the wall of the channel must be coated with a conductive substance.
- the sample holder is made entirely of metal, preferably of aluminum.
- the advantages achieved by the invention are, in particular, that XPS measurements can be carried out with high resolution with the aid of a commercial Auger apparatus.
- the advantages of the Auger method, in particular the high resolution, are combined with the advantages of the XPS method, so that almost all structures can be examined and less radiation damage occurs on the sample.
- the method is suitable for the investigation of masks for X-ray lithography and of all microstructures on membranes from the field of micromechanics and of biological substances that can be prepared on membranes.
- Fig. La the schematic representation of an apparatus for Auger examinations
- Fig. Lb the schematic representation of an apparatus for XPS examinations
- FIG. 2a shows the schematic representation of the apparatus according to the invention for XPS examinations
- Fig. 7 shows the three-dimensional representation of the sample holder.
- electron beams are represented as straight arrows and denoted by e-, wavy arrows represent X-rays.
- FIG. 1 two known methods for examining surfaces are shown schematically.
- Auger examinations according to FIG. 1 a an electron beam from an electron source 1 hits the surface of the sample 2 at an angle ⁇ .
- the secondary electrons become analyzed that emerge from the sample surface at an angle. This direction of observation coincides with the axis of the hotoelectron spectrometer.
- the primary electron beam 14 from the electron source 1 strikes the back of a membrane 5 (thickness, for example 2 ⁇ m) at an angle ⁇ , on the front of which the structure 11 to be examined is encountered (Thickness, for example, a few 10 nm), in the case of this exemplary embodiment, an X-ray mask is applied.
- the electron beam induces an X-ray radiation 13 in the Si membrane, in this example the SiE ⁇ radiation is used for excitation. Since the electron beam can be focused very finely, the X-ray radiation generated by the electron beam is spatially limited to a very narrow area 12, as a result of which a high spatial resolution is achieved.
- the X-ray radiation triggers photoelectrons 15 in a spatially narrow area on the membrane surface. Those photoelectrons that emerge from the front of the membrane at a certain angle y are examined with the aid of a photoelectron spectrometer 3 in order to analyze the structure.
- incident electron beam are effectively kept away from the photoelectron spectrometer with the aid of the method according to the invention using the sample holder according to the invention.
- FIG. 3 shows the point analysis of a transparent area of the X-ray mask.
- the intensity of the photoelectron beam (vertical axis) is plotted against the energy of the photoelectrons (horizontal axis).
- two intensity maxima Si2s, Si2p
- two relative maxima can be seen, which in their energy are represented by lines from the electron spectrum of carbon (C) or argon (Ar) to match. This shows the contamination with carbon and argon atoms that remains after sputtering the membrane surface.
- the performance of this method is proven to analyze trace elements on the surface.
- An area of up to 500 x 500 micrometers is scanned on the back of the membrane with the primary electron beam. A correspondingly large area of the structure on the membrane surface can thereby be examined.
- the size of the area in this exemplary embodiment is not a limitation, since the dimensions of the sample holder can be chosen so large that the entire membrane surface is covered.
- 4a and 4b show raster images of structures which were written with the aid of photoelectrons with an energy of 1588 eV (Si2s - maximum).
- the resolving power of the process is illustrated with the aid of a line grid over the edge of a structure.
- 5 shows the intensity of the measurement signal along a silicon-gold edge.
- the resolution limit is 6 ⁇ m and is significantly lower than the resolution of 40 ⁇ previously achieved with the XPS method.
- the sample holder (Fig. 6 and " Fig. 7) for carrying out the described method consists of a base body 6 made of aluminum, which has two surfaces 7, 8 inclined towards each other.
- the angle which the two surfaces 1, 8 enclose corresponds to the angle ⁇ (Fig. 2a) between the incident electron beam and the direction of observation (spectrometer axis).
- the geometry of the sample holder is chosen so that the surface to be examined halves this angle.
- the angles S and ⁇ are approximately the same size.
- the base body is penetrated by a channel 9, which provides the two surfaces 7, 8 with openings.
- the opening facing in the direction of the incident electron beam, r is partially covered with an aperture 10 (diameter about 1 mm) while facing the opposite opening of the diaphragm 5 is attached to the structure to be examined. 11
- the sample holder with the channel 9, which acts as a Faraday cage, ensures that secondary electrons, which result from the primary electron beam striking the membrane, do not strike the spectrometer.
- the disturbing background radiation is thereby reduced to a minimum.
- the special geometry of the sample holder causes the incident electron beam and the spectrometer axis, which determines the direction of observation of the photoelectrons generated by the X-rays, to form an angle - left
- the sample holder has an edge length of a few centimeters, the channel diameter is approximately 1 mm.
- the sample holder can be rotated around its figure axis in order to be able to carry out tests using the Auger method with unchanged arrangement.
- the sample holder can also be made much larger for the examination of larger areas (membrane surfaces of a few cm in diameter).
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT89906719T ATE94984T1 (de) | 1988-06-16 | 1989-06-16 | Verfahren und vorrichtung zur untersuchung von strukturen auf membranoberflaechen. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3820549 | 1988-06-16 | ||
DE3820549A DE3820549A1 (de) | 1988-06-16 | 1988-06-16 | Verfahren und vorrichtung zur untersuchung von membranoberflaechen |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0423154A1 true EP0423154A1 (de) | 1991-04-24 |
EP0423154B1 EP0423154B1 (de) | 1993-09-22 |
Family
ID=6356700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89906719A Expired - Lifetime EP0423154B1 (de) | 1988-06-16 | 1989-06-16 | Verfahren und vorrichtung zur untersuchung von strukturen auf membranoberflächen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5369274A (de) |
EP (1) | EP0423154B1 (de) |
JP (1) | JPH0692946B2 (de) |
DE (2) | DE3820549A1 (de) |
WO (1) | WO1989012818A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5609635A (en) | 1988-06-28 | 1997-03-11 | Michelson; Gary K. | Lordotic interbody spinal fusion implants |
TW306033B (en) * | 1996-11-26 | 1997-05-21 | United Microelectronics Corp | Method of removing charge effect and thermal damage of charged particle microscope |
US6537848B2 (en) | 2001-05-30 | 2003-03-25 | St. Assembly Test Services Ltd. | Super thin/super thermal ball grid array package |
US6576894B1 (en) * | 2001-06-25 | 2003-06-10 | Taiwan Semiconductor Manufacturing Company | Structure for FIB based microanalysis and method for manufacturing it |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2418228A (en) * | 1943-10-08 | 1947-04-01 | Rca Corp | Electronic microanalyzer |
US3806728A (en) * | 1970-05-27 | 1974-04-23 | C Lindholm | Electron impact spectrometer with an improved source of monochromatic electrons |
GB1327572A (en) * | 1971-03-23 | 1973-08-22 | Ass Elect Ind | Apparatus for use in charged particle spectroscopy |
JPS532755B2 (de) * | 1973-08-22 | 1978-01-31 | ||
JPS5933222B2 (ja) * | 1975-11-14 | 1984-08-14 | 株式会社島津製作所 | ガスブンセキソウチ |
JPS5260685A (en) * | 1975-11-14 | 1977-05-19 | Hitachi Ltd | Spectrophotometer |
JPS599850B2 (ja) * | 1975-11-14 | 1984-03-05 | 株式会社島津製作所 | X センコウデンシブンセキホウホウ |
FR2410271A1 (fr) * | 1977-11-29 | 1979-06-22 | Anvar | Perfectionnements aux procedes de micro-analyse faisant intervenir un rayonnement x |
CA1183285A (en) * | 1981-04-20 | 1985-02-26 | Robert K. Smither | Instrument and method for focusing x-rays, gamma rays and neutrons |
DD203395A1 (de) * | 1981-10-22 | 1983-10-19 | Gerhard Blasek | Einrichtung zur analyse von festkoerperoberflaechen |
US4459482A (en) * | 1982-05-06 | 1984-07-10 | Bales Maurice J | Auger spectroscopic technique measuring the number of electrons emitted from a surface as a function of the energy level of those electrons |
DE3500982A1 (de) * | 1985-01-14 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Probenbecher fuer die roentgenspektrometrie |
US4752685A (en) * | 1985-06-07 | 1988-06-21 | Anelva Corporation | Electronic spectrometer for identifying element conditions of a sample surface by utilizing an energy spectrum of charged particles |
-
1988
- 1988-06-16 DE DE3820549A patent/DE3820549A1/de not_active Withdrawn
-
1989
- 1989-06-16 WO PCT/DE1989/000398 patent/WO1989012818A1/de active IP Right Grant
- 1989-06-16 JP JP1506510A patent/JPH0692946B2/ja not_active Expired - Lifetime
- 1989-06-16 US US07/623,930 patent/US5369274A/en not_active Expired - Fee Related
- 1989-06-16 EP EP89906719A patent/EP0423154B1/de not_active Expired - Lifetime
- 1989-06-16 DE DE89906719T patent/DE58905707D1/de not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of WO8912818A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP0423154B1 (de) | 1993-09-22 |
DE3820549A1 (de) | 1989-12-21 |
US5369274A (en) | 1994-11-29 |
WO1989012818A1 (en) | 1989-12-28 |
JPH0692946B2 (ja) | 1994-11-16 |
JPH03505122A (ja) | 1991-11-07 |
DE58905707D1 (de) | 1993-10-28 |
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