EP0342814B1 - Circuit intégré MOS pour commande de diodes électroluminescentes - Google Patents

Circuit intégré MOS pour commande de diodes électroluminescentes Download PDF

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Publication number
EP0342814B1
EP0342814B1 EP89304411A EP89304411A EP0342814B1 EP 0342814 B1 EP0342814 B1 EP 0342814B1 EP 89304411 A EP89304411 A EP 89304411A EP 89304411 A EP89304411 A EP 89304411A EP 0342814 B1 EP0342814 B1 EP 0342814B1
Authority
EP
European Patent Office
Prior art keywords
current
voltage
integrated circuit
circuit
emitting diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP89304411A
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German (de)
English (en)
Other versions
EP0342814A3 (fr
EP0342814A2 (fr
Inventor
Kazuhiro Sameshima
Masaru Ohnishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12440188A external-priority patent/JPH0635189B2/ja
Priority claimed from JP1038661A external-priority patent/JPH02218183A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of EP0342814A2 publication Critical patent/EP0342814A2/fr
Publication of EP0342814A3 publication Critical patent/EP0342814A3/fr
Application granted granted Critical
Publication of EP0342814B1 publication Critical patent/EP0342814B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/262Current mirrors using field-effect transistors only
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K15/00Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers
    • G06K15/02Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers using printers
    • G06K15/12Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers using printers by photographic printing, e.g. by laser printers
    • G06K15/1238Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers using printers by photographic printing, e.g. by laser printers simultaneously exposing more than one point
    • G06K15/1242Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers using printers by photographic printing, e.g. by laser printers simultaneously exposing more than one point on one main scanning line
    • G06K15/1247Arrangements for producing a permanent visual presentation of the output data, e.g. computer output printers using printers by photographic printing, e.g. by laser printers simultaneously exposing more than one point on one main scanning line using an array of light sources, e.g. a linear array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/395Linear regulators
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10Controlling the intensity of the light
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

  • This invention relates to an MOS integrated circuit for driving light-emitting diodes (LED's), included, for example, in an LED array in a head which is used as a light source in an electrophotographic printer.
  • LED's light-emitting diodes
  • an LED array head includes several thousands of LED's, and, in order to drive these LED's, several tens to several thousands of integrated circuits each having 32 to 64 driver circuits must be used.
  • MOS integrated circuits shown, for example, in the official gazette of Unexamined Japanese Patent Publication No. SHO 60-198872 have been used.
  • Figure 1 shows an LED driving MOS integrated circuit disclosed in the above-stated Unexamined Japanese Patent Publication No. SHO-60-198872.
  • an LED driving circuit 1 controls power supplied to LED's 3a-3c from a DC power supply 2 so that the brightness of the LED's is maintained at a predetermined value.
  • the LED driving circuit 1 is fabricated as an MOS integrated circuit on a single substrate.
  • the LED driving MOS integrated circuit 1 comprises MOS transistors 4 connected in series with the respective LED's 3a-3c.
  • the MOS transistors 4 serve as current limiting elements for limiting the values of currents flowing through the respective LED's 3a-3c.
  • the MOS transistors 4 are connected to the positive terminal of the DC supply 2 through associated resistors 5.
  • a desired LED driving current limited by the MOS transistors 4 flows through the associated resistors 5, and a voltage V1 at the level determined by the magnitude of current flowing through the respective ones of the LED's 3a-3c is developed across the resistor 5.
  • the voltage V1 is applied to a + input terminal of an associated voltage comparator 6.
  • a depletion-type MOS transistor 7 having its gate electrode connected directly to its own source electrode is used to derive a reference voltage V r which is at a constant level regardless of the level of the terminal voltage V0 of the power supply 2 and is applied to - input terminals of the respective voltage comparators 6.
  • the drain electrode of the transistor 7 is connected to the - input terminals of the respective voltage comparators 6 and also connected through a resistor 8 to the positive terminal of the power supply 2.
  • the source electrode of the transistor 7 is grounded together with its gate electrode.
  • the drain current I D of the transistor 7 flowing through the resistor 8 causes the voltage V r to be developed across the resistor 8, and this voltage is applied as a reference voltage to the - input terminals of the voltage comparators 6.
  • each of the voltage comparators 6 develops an output voltage V G in accordance with the difference between the voltage V1 and the reference voltage V r
  • This output voltage V G controls the conduction of the associated transistor 4.
  • V1 ⁇ V r the output voltage V G of each voltage comparator 6 increases in the positive direction to increase the drain current of the transistor 4, which in turn causes the voltage drop across the associated resistor 5 to increase.
  • V1>V r the output voltage V G of each voltage comparator 6 increases in the negative direction so that the drain current of the transistor 4 decreases, which in turn causes decrease in voltage drop across the resistor 5.
  • the voltage V1 decreases.
  • the LED's 3a-3c are driven with constant current.
  • Switching transistors 9 are connected between the gates of the respective MOS transistors 4 and ground, respectively, for selectively driving the LED's 3a, 3b and 3c.
  • the switching transistors 9 are turned on or off in response to a selection signal applied thereto from a control circuit 10, so that the desired LED's are selectively energized to emit light.
  • the resistors 5 and 8 are usually formed simultaneously as diffused resistors or polysilicon resistors, and, therefore, there is little variation in resistance value of the resistors in a particular one of the integrated circuits.
  • more than ⁇ 35% of variations could be caused in resistance value among different integrated circuits, and accordingly, more than ⁇ 35% of variations in output current from such integrated circuits will be caused. That is, the output current of one integrated circuit could be two or more times that of other integrated circuits.
  • the quality of pictures produced by a printer depends on the uniformity of the light output of an LED heads. Therefore it is necessary to make the light output of the LED head as uniform as possible so that variations in light output may be, for example, within a range of less than ⁇ 20%.
  • variations of the light outputs namely, variations of LED array chips and focusing lenses. Therefore, in order to provide uniform light outputs, at least variations of driving power supplies of the integrated circuits must be reduced to, for example, less than ⁇ 5%.
  • such a classification procedure is one of the largest causes of increase of the manufacturing costs.
  • the light output of an LED is temperature-dependent, and as temperature increases, the light output of an LED decreases. Accordingly, it is necessary that current to drive the LED be controlled in response to temperature.
  • the depletion-type MOS transistor 7 is used to develop the reference voltage V r for temperature-controlling the drive current.
  • V r the value of V r varies from circuit to circuit due to varying manufacturing conditions which cannot be made constant, so the yield of usable integrated circuits is low, which raises the cost of the integrated circuits.
  • the present invention is to eliminate the above-stated disadvantages of conventional integrated circuits. According to the present invention as defined by the claims, variations in values of output currents of integrated circuits can be minimized, so that no procedure of classifying manufactured integrated circuits is needed and the yield of usable integrated circuits increases. Thus, the manufacturing costs of LED array heads and, hence, ultimate products can be small.
  • an LED driving MOS integrated circuit includes a plurality of first constant current circuits, each for a respective one of a plurality of LED's to be driven.
  • Each of the first constant current circuits comprises a current control element connected in series with an associated LED, a current detecting element connected in series with that LED for sensing current flowing into the LED and providing a detection voltage representing the sensed current, and a drive circuit which is responsive to a reference voltage and the detection voltage from the current detecting element to drive the current control element so as to maintain the drive current flowing into the LED at a predetermined value.
  • the MOS integrated circuit according to the first embodiment of the present invention further includes a second constant current circuit common to all the LED's to be driven.
  • the second constant current circuit is connected to the reference voltage input of the first constant current circuit and comprises, similar to the first constant current circuit, a current detecting element, a current control element and a driver circuit.
  • the second constant circuit forms a mirror circuit with each of the first constant circuits.
  • an LED driving MOS integrated circuit employs, in the second constant current circuit, a current detecting element which comprises a basic detecting component and a plurality of adjustment detecting components.
  • a selection circuit enables desired ones of the adjustment detecting components to adjust the value of the current detecting element, as occasion demands.
  • Figure 2 shows a basic circuit configuration of the LED driving MOS integrated circuit 11 of the present invention, which includes a plurality of current control elements 4a for respective ones of LED's 3 to be driven, and current control elements 4b and 4c.
  • the current control elements 4a, 4b and 4c are MOS transistors of like characteristics.
  • the integrated circuit 11 includes also a plurality of circuits 6a for driving respective ones of the current control elements 4a and a circuit 6b for driving the current control elements 4b and 4c. These circuits comprise voltage comparators of like configurations.
  • the integrated circuit further includes a load resistor 5b (having a resistance value of R IN ) like the resistors 5a, which acts as a voltage drop element for producing a first reference voltage, and a resistor 5c which has a resistance value R E that is substantially equal to the resistance of the current detecting element resistors 5a.
  • a load resistor 5b having a resistance value of R IN
  • R E resistance value
  • the MOS transistors 4a, the voltage comparators 6a and the resistors 5a correspond to the MOS transistors 4, the voltage comparators 6 and the resistors 5 in the conventional LED driving MOS integrated circuit shown in Figure 1, respectively, and form a plurality of first constant current circuits to which a voltage V r2 developed at a node B is applied as a first reference voltage.
  • Each first constant current circuit which comprises one current control element 4a, one voltage comparator 6a and one resistor 5a, is associated with one of the LED's to be driven.
  • Ones of the LED's 3 to be energized to emit light are selected by means of associated switches 9.
  • the two MOS transistors 4b and 4c, the voltage comparator 6b and the resistor 5c form a second constant current circuit which uses a voltage V r1 as a second reference voltage applied to a + input terminal of the voltage comparator 6b.
  • the second constant current circuit forms mirror circuits with the respective first constant current circuits, whereby current I0 flowing through the resistor 5c and current I2 for driving each of the LED's 3 can be made equal.
  • a voltage V DD is applied to this integrated circuit from an external DC voltage source (not shown).
  • the high precision resistor 5c having substantially the same resistance value as the resistors 5a and 5b is connected in series with the MOS transistor 4c.
  • the current I0 flows through the resistor 5c.
  • the voltage comparator 6b then develops an output voltage V G1 which is applied to the MOS transistor 4c as its gate voltage.
  • This voltage V G1 is also applied, as a gate voltage, to the MOS transistor 4b which is formed to have the same characteristics as the transistor 4c, and, therefore, current I1 flowing through the load resistor 5b has the same value as the current I0 of the second constant current circuit. Accordingly, the reference voltage V r2 at the node B that is applied to the + input terminal of the voltage comparator 6a is expressed as follows.
  • V r2 V DD - R IN (V DD - V r1 )/R E
  • the drive current I2 for the LED's 3 is determined by the high precision resistor 5c of the integrated circuit.
  • the resistance value of the resistors 5a and 5b may vary by more than ⁇ 35% from one integrated circuit to others, but within one particular integrated circuit, variations in resistance value of the resistors 5a and 5b are very small. Accordingly, in order to minimize variations in current value among different integrated circuits, it is sufficient to precisely adjust the values of the respective resistors 5c, in particular, by trimming. In stead of trimming the resistors 5, the resistors 5c may be provided outside the integrated circuits, since inexpensive resistors having variations in value of less than ⁇ 1% are commercially available, and can be used as the high-precision external resistors 5c. The use of one such external resistor for one integrated circuit can greatly reduce variations in current value among a number of integrated circuits. Also, it is possible to obtain any desired value for the drive current.
  • Figure 3 shows a second embodiment of the LED driving MOS integrated circuit according to the present invention.
  • the same reference numerals and symbols as used in Figure 2 are used for components and functions which appear also in Figure 2, and explanations about them are not made.
  • a plurality of resistance-adjustment resistors are used, for providing the load resistance for the transistor 4c.
  • One or more of such resistance-adjustment resistors, as required, are connected in parallel with the resistor 5c.
  • the LED driving current I2 can be stably adjusted within a range of from 20% to 30% by adjusting the resistance value R E of the load resistance for the transistor 4c.
  • resistance-adjustment resistors 5d and 5e have resistance values that are, for example, about ten times that of the resistor 5c.
  • Switching elements (transistors in this embodiment) 7d and 7e when enabled, connect the resistors 5d and 5e in parallel with the resistor 5c, respectively.
  • a selection circuit (latch circuit in this embodiment) 8 receives a latch signal LATCH to store data d1 and d2 for on-off controlling the respective switching elements 7d and 7e.
  • the load resistance for the transistor 4c can assume four values, namely, the resistance value when both of the switching elements 7d and 7e are conductive, the resistance value when both of them are nonconductive, the resistance value when only one of them is conductive, and the resistance value when only the other switching element is conductive.
  • the load resistance value can be adjusted in four steps to thereby compensate for variations in value of the basic resistors 5c of different integrated circuits can be compensated for and, hence, variations of drive currents among the integrated circuits can be minimized.
  • This second embodiment has been described to employ two resistance-adjustment resistors, but the number of the resistance-adjustment resistors can be increased to increase the adjustment steps accordingly so that the adjustment can be made more precisely.
  • the values of the drive currents in the LED driving MOS integrated circuits can readily be made equal to each other by highly precisely setting the load resistances of the second constant current circuits of the respective integrated circuits. Furthermore, by employing the arrangement to externally controlling the values of the drive currents, a uniform, stable light output can be provided from an LED array head driven by a plurality of integrated circuits of the present invention. In addition, if adjustable load resistors are used in the second constant current circuits, the same results as stated above can be obtained without incurring large expenses. Thus, integrated circuits and, hence, LED array heads are fabricated at smaller costs.

Claims (5)

  1. Un circuit intégré MOS pour attaquer des diodes électroluminescentes (3), comprenant :
       un ensemble de premiers circuits à courant constant, chacun d'eux étant destiné à l'une des diodes électroluminescentes (3), chacun des premiers circuits à courant constant comprenant un premier élément de commande de courant (4a) connecté en série avec l'une des diodes électroluminescentes, un premier élément de détection de courant (5a) connecté en série avec le premier élément de commande de courant et la diode électroluminescente considérée, et un premier circuit d'attaque (6a) qui réagit à une tension de détection provenant du premier élément de détection de courant (5a) et à une première tension de référence (Vr2) en attaquant le premier élément de commande de courant (4a) d'une manière telle que le courant (I₂) qui circule à travers cette diode électroluminescente soit maintenu à une valeur fixée; et
       un élément de chute de tension (5b) pour produire la première tension de référence (Vr2);
       caractérisé en ce que ce circuit intégré MOS comprend en outre :
       un second circuit à courant constant connecté de façon à former un circuit miroir avec chaque circuit de l'ensemble de premiers circuits à courant constant, le second circuit à courant constant comprenant un second élément de commande de courant (4b) qui est connecté en série avec l'élément de chute de tension (5b), pour commander le courant (I₁) qui circule vers l'élément de chute de tension à partir d'une source de tension continue (VDD), et un second circuit d'attaque (4c, 6b) qui réagit à une tension de détection provenant d'un second élément de détection de courant (5c) connecté à une source de tension continue (VDD), de façon à faire circuler à travers lui une valeur de courant prédéterminée (I₀), et qui réagit également à une seconde tension de référence (Vr1) de façon à attaquer le second élément de commande de courant (4b) d'une manière telle que le courant (I₁) qui circule à travers l'élément de chute de tension (5b) soit maintenu à une valeur fixée.
  2. Le circuit intégré MOS pour attaquer des diodes électroluminescentes selon la revendication 1, dans lequel le second élément de détection de courant comprend un composant de base (5c) et un ensemble de composants de réglage (5d, 5e) qui peuvent être connectés en parallèle avec le composant de base en fonction de la situation, les composants de réglage à connecter à l'élément de base étant sélectionnés par un circuit de sélection (7d, 7e, 8).
  3. Le circuit intégré MOS pour attaquer des diodes électroluminescentes selon la revendication 1, dans lequel la valeur du second élément de détection de courant (5c) est fixée avec précision et cet élément est fabriqué sous la forme d'un circuit intégré avec les autres éléments de circuit.
  4. Le circuit intégré MOS pour attaquer des diodes électroluminescentes selon la revendication 1, dans lequel le second élément de détection de courant est disposé à l'extérieur du circuit intégré.
  5. Le circuit intégré MOS pour attaquer des diodes électroluminescentes selon l'une quelconque des revendications 1 à 4, dans lequel la seconde tension de référence (Vr1) est appliquée au circuit intégré de façon externe.
EP89304411A 1988-05-20 1989-05-02 Circuit intégré MOS pour commande de diodes électroluminescentes Expired - Lifetime EP0342814B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12440188A JPH0635189B2 (ja) 1988-05-20 1988-05-20 駆動回路
JP124401/88 1988-05-20
JP1038661A JPH02218183A (ja) 1989-02-17 1989-02-17 Led駆動用mos集積回路
JP38661/89 1989-02-17

Publications (3)

Publication Number Publication Date
EP0342814A2 EP0342814A2 (fr) 1989-11-23
EP0342814A3 EP0342814A3 (fr) 1991-12-04
EP0342814B1 true EP0342814B1 (fr) 1995-02-08

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Application Number Title Priority Date Filing Date
EP89304411A Expired - Lifetime EP0342814B1 (fr) 1988-05-20 1989-05-02 Circuit intégré MOS pour commande de diodes électroluminescentes

Country Status (3)

Country Link
US (1) US5061861A (fr)
EP (1) EP0342814B1 (fr)
DE (1) DE68921020T2 (fr)

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JPS63216331A (ja) * 1987-03-05 1988-09-08 Canon Inc 堆積膜形成法
JP2797296B2 (ja) * 1987-05-21 1998-09-17 ミノルタ株式会社 画像読取装置
US4739246A (en) * 1987-06-01 1988-04-19 Gte Communication Systems Corporation Current reference for feedback current source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101316466B (zh) * 2007-05-30 2011-12-07 联阳半导体股份有限公司 定电流驱动电路

Also Published As

Publication number Publication date
EP0342814A3 (fr) 1991-12-04
EP0342814A2 (fr) 1989-11-23
DE68921020T2 (de) 1995-06-29
DE68921020D1 (de) 1995-03-23
US5061861A (en) 1991-10-29

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