DE69521028T2 - Vortreiberschaltung zum rauscharmen Schalten hoher Ströme in einer Last - Google Patents

Vortreiberschaltung zum rauscharmen Schalten hoher Ströme in einer Last

Info

Publication number
DE69521028T2
DE69521028T2 DE69521028T DE69521028T DE69521028T2 DE 69521028 T2 DE69521028 T2 DE 69521028T2 DE 69521028 T DE69521028 T DE 69521028T DE 69521028 T DE69521028 T DE 69521028T DE 69521028 T2 DE69521028 T2 DE 69521028T2
Authority
DE
Germany
Prior art keywords
load
low
driver circuit
high currents
noise switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69521028T
Other languages
English (en)
Other versions
DE69521028D1 (de
Inventor
Rajan Walia
Billy E Thayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69521028D1 publication Critical patent/DE69521028D1/de
Publication of DE69521028T2 publication Critical patent/DE69521028T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
DE69521028T 1995-03-29 1995-08-14 Vortreiberschaltung zum rauscharmen Schalten hoher Ströme in einer Last Expired - Fee Related DE69521028T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41242195A 1995-03-29 1995-03-29

Publications (2)

Publication Number Publication Date
DE69521028D1 DE69521028D1 (de) 2001-06-28
DE69521028T2 true DE69521028T2 (de) 2001-09-06

Family

ID=23632898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521028T Expired - Fee Related DE69521028T2 (de) 1995-03-29 1995-08-14 Vortreiberschaltung zum rauscharmen Schalten hoher Ströme in einer Last

Country Status (5)

Country Link
US (1) US5781045A (de)
EP (1) EP0735676B1 (de)
JP (1) JP3703198B2 (de)
KR (1) KR100392799B1 (de)
DE (1) DE69521028T2 (de)

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TW402841B (en) * 1997-04-24 2000-08-21 Hitachi Ltd Complementary MOS semiconductor circuit
US5905399A (en) * 1997-06-30 1999-05-18 Sun Microsystems, Inc. CMOS integrated circuit regulator for reducing power supply noise
US6208177B1 (en) * 1999-05-27 2001-03-27 Lucent Technologies Inc. Output buffer having immediate onset of gentle state transition
WO2001035532A1 (de) * 1999-11-11 2001-05-17 Infineon Technologies Ag Integrierte digitalschaltung und verfahren zu deren betrieb
US6388475B1 (en) * 1999-12-29 2002-05-14 Intle Corporation Voltage tolerant high drive pull-up driver for an I/O buffer
US6420905B1 (en) 2000-09-07 2002-07-16 John Haven Davis Vented CMOS dynamic logic system
US6384654B1 (en) * 2000-10-17 2002-05-07 Glenn Noufer High speed circuit of particular utility in delay and phase locked loops
JP4212767B2 (ja) * 2000-12-21 2009-01-21 旭化成エレクトロニクス株式会社 高速電流スイッチ回路および高周波電流源
US6798152B2 (en) * 2002-08-21 2004-09-28 Freescale Semiconductor, Inc. Closed loop current control circuit and method thereof
JP4576538B2 (ja) * 2004-05-12 2010-11-10 国立大学法人 岡山大学 多次元のスイッチトポロジーを有する集積回路
US7889609B2 (en) * 2006-09-26 2011-02-15 Silicon Core Technology, Inc. Enhanced linearity DVD writing current circuit
US7916613B2 (en) * 2007-01-05 2011-03-29 Silicon Core Technology, Inc. Higher performance DVD writing current circuit
JP5158620B2 (ja) * 2007-02-20 2013-03-06 セイコーエプソン株式会社 集積回路装置及び電子機器
US8188769B2 (en) * 2008-05-09 2012-05-29 Analog Devices, Inc. Method and apparatus for propagation delay and EMI control
US20110140708A1 (en) * 2009-12-11 2011-06-16 William Henry Lueckenbach System, method, and apparatus for providing redundant power control using a digital output module
US9118322B2 (en) * 2010-10-12 2015-08-25 Alpha And Omega Semiconductor (Cayman) Ltd Low leakage dynamic bi-directional body-snatching (LLDBBS) scheme for high speed analog switches
US9230671B2 (en) * 2013-07-05 2016-01-05 Kabushiki Kaisha Toshiba Output circuit and semiconductor storage device
CN104467769B (zh) * 2014-12-10 2017-12-26 芯原微电子(上海)有限公司 片上开关逐级控制电路及方法、片上信号管脚驱动电路
US10090675B1 (en) 2016-06-25 2018-10-02 Active-Semi, Inc. Fast settlement of supplement converter for power loss protection system
US9721742B1 (en) 2016-06-25 2017-08-01 Active-Semi, Inc. Power integrated circuit with autonomous limit checking of ADC channel measurements
US10985644B1 (en) 2016-06-25 2021-04-20 Active-Semi, Inc. Optimized gate driver for low voltage power loss protection system
US10826480B1 (en) * 2016-07-01 2020-11-03 Active-Semi, Inc. Gate driver to decrease EMI with shorter dead-time
CN107040245B (zh) * 2017-05-03 2023-08-22 深圳市硕亚科技有限公司 千安培大电流脉冲信号产生装置及didt测试设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621191A (ja) * 1985-03-11 1987-01-07 Nec Ic Microcomput Syst Ltd 信号出力回路
JPS61292412A (ja) * 1985-06-20 1986-12-23 Fujitsu Ltd 出力回路
US4719369A (en) * 1985-08-14 1988-01-12 Hitachi, Ltd. Output circuit having transistor monitor for matching output impedance to load impedance
US4638187A (en) * 1985-10-01 1987-01-20 Vtc Incorporated CMOS output buffer providing high drive current with minimum output signal distortion
US4731553A (en) * 1986-09-30 1988-03-15 Texas Instruments Incorporated CMOS output buffer having improved noise characteristics
US4855623A (en) * 1987-11-05 1989-08-08 Texas Instruments Incorporated Output buffer having programmable drive current
US4825099A (en) * 1987-12-04 1989-04-25 Ford Microelectronics Feedback-controlled current output driver having reduced current surge
US4820942A (en) * 1988-01-27 1989-04-11 Advanced Micro Devices, Inc. High-speed, high-drive output buffer circuits with reduced ground bounce
US4825101A (en) * 1988-02-11 1989-04-25 Advanced Micro Devices, Inc. Full-level, fast CMOS output buffer
DE68921020T2 (de) * 1988-05-20 1995-06-29 Mitsubishi Electric Corp Integrierte MOS-Schaltung zum Steuern von lichtermittierenden Dioden.
US5293082A (en) * 1988-06-21 1994-03-08 Western Digital Corporation Output driver for reducing transient noise in integrated circuits
US4880997A (en) * 1988-08-18 1989-11-14 Ncr Corporation Low noise output buffer circuit
US4961010A (en) * 1989-05-19 1990-10-02 National Semiconductor Corporation Output buffer for reducing switching induced noise
JPH0752829B2 (ja) * 1989-09-13 1995-06-05 株式会社東芝 出力回路
US5039874A (en) 1990-03-15 1991-08-13 Hewlett-Packard Company Method and apparatus for driving an integrated-circuit output pad
IT1246755B (it) * 1990-12-28 1994-11-26 Sgs Thomson Microelectronics Circuito di pilotaggio veloce di un carico capacitivo per circuiti integrari, particolarmente memorie.
JP2932722B2 (ja) * 1991-02-28 1999-08-09 日本電気株式会社 電流駆動回路
US5192881A (en) * 1991-06-28 1993-03-09 Vlsi Technology, Inc. Circuit which reduces noise caused by high current outputs
KR930008656B1 (ko) * 1991-07-19 1993-09-11 삼성전자 주식회사 노이즈가 억제되는 데이타 출력 버퍼
US5218239A (en) * 1991-10-03 1993-06-08 National Semiconductor Corporation Selectable edge rate cmos output buffer circuit
KR940010673B1 (ko) * 1992-08-24 1994-10-24 삼성전자 주식회사 저전력 데이타 출력버퍼

Also Published As

Publication number Publication date
JP3703198B2 (ja) 2005-10-05
EP0735676B1 (de) 2001-05-23
US5781045A (en) 1998-07-14
EP0735676A1 (de) 1996-10-02
JPH08279738A (ja) 1996-10-22
KR100392799B1 (ko) 2003-11-20
DE69521028D1 (de) 2001-06-28

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES INC., A DELAWARE CORP., PALO

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8339 Ceased/non-payment of the annual fee