DE69529974D1 - Ein halbleiter-leistungsschalter - Google Patents
Ein halbleiter-leistungsschalterInfo
- Publication number
- DE69529974D1 DE69529974D1 DE69529974T DE69529974T DE69529974D1 DE 69529974 D1 DE69529974 D1 DE 69529974D1 DE 69529974 T DE69529974 T DE 69529974T DE 69529974 T DE69529974 T DE 69529974T DE 69529974 D1 DE69529974 D1 DE 69529974D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit breaker
- semiconductor circuit
- semiconductor
- breaker
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9426007.2A GB9426007D0 (en) | 1994-12-22 | 1994-12-22 | A power semiconductor switch |
PCT/IB1995/001097 WO1996019870A1 (en) | 1994-12-22 | 1995-12-06 | A power semiconductor switch |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69529974D1 true DE69529974D1 (de) | 2003-04-24 |
Family
ID=10766439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69529974T Expired - Lifetime DE69529974D1 (de) | 1994-12-22 | 1995-12-06 | Ein halbleiter-leistungsschalter |
Country Status (7)
Country | Link |
---|---|
US (1) | US5886543A (de) |
EP (1) | EP0746905B1 (de) |
JP (1) | JPH09509813A (de) |
KR (1) | KR100355685B1 (de) |
DE (1) | DE69529974D1 (de) |
GB (1) | GB9426007D0 (de) |
WO (1) | WO1996019870A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19808928B4 (de) * | 1998-03-03 | 2008-07-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kraft/Drehmomentsensor |
FI110898B (fi) * | 1998-10-26 | 2003-04-15 | Abb Industry Oy | Vaihtosuuntaaja |
US6603221B1 (en) * | 1999-04-22 | 2003-08-05 | Zhongdu Liu | Solid state electrical switch |
JP2001332696A (ja) * | 2000-05-24 | 2001-11-30 | Nec Corp | 基板電位検知回路及び基板電位発生回路 |
US6509781B2 (en) * | 2001-03-20 | 2003-01-21 | Koninklijke Philips Electronics N.V. | Circuit and method for controlling a dynamic, bi-directional high voltage analog switch |
JP3997736B2 (ja) * | 2001-08-02 | 2007-10-24 | 住友電装株式会社 | 断線検出装置 |
JP4198539B2 (ja) * | 2003-06-16 | 2008-12-17 | Necエレクトロニクス株式会社 | 出力回路 |
US7102359B2 (en) * | 2004-10-15 | 2006-09-05 | Freescale Semiconductor, Inc. | Integrated fault detector circuit |
US9020683B1 (en) | 2007-07-06 | 2015-04-28 | Yazaki North America, Inc. | Method and system to detect faults of a trailer electrical system |
EP2787331B1 (de) * | 2013-04-01 | 2018-12-26 | ams AG | Sensoranordnung für Lichterkennung und Temperaturerkennung und Verfahren für die Lichterkennung und Temperaturerkennung |
US10090674B2 (en) * | 2015-09-21 | 2018-10-02 | Silicon Laboratories Inc. | Maximum supply voltage selection |
US20190145926A1 (en) * | 2016-04-29 | 2019-05-16 | Stc. Unm | Wafer level gate modulation enhanced detectors |
US10547296B2 (en) * | 2017-05-31 | 2020-01-28 | Texas Instruments Incorporated | Methods and apparatus for cross-conduction detection |
US11579645B2 (en) * | 2019-06-21 | 2023-02-14 | Wolfspeed, Inc. | Device design for short-circuitry protection circuitry within transistors |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU440345B1 (en) * | 1969-04-08 | 1971-01-28 | Philips Industries Limited | Circuit arrangements forthe indication of lamp failure |
DE2728229A1 (de) * | 1977-06-23 | 1979-01-11 | Vdo Schindling | Ueberwachungseinrichtung fuer die ordnungsgemaesse funktion von lampen, insbesondere in kraftfahrzeugen |
JPS605090B2 (ja) * | 1977-12-01 | 1985-02-08 | 株式会社デンソー | 車両用点滅装置 |
JPS55140622A (en) * | 1979-04-16 | 1980-11-04 | Hitachi Ltd | Electronically controlled direction indicator |
JPH0629116Y2 (ja) * | 1985-04-12 | 1994-08-10 | 株式会社東海理化電機製作所 | ランプの断線検出装置 |
EP0201878A3 (de) * | 1985-05-10 | 1987-04-15 | Siemens Aktiengesellschaft | Schaltungsanordnung mit einem p-schaltenden n-Kanal MOS-Transistor |
US5266840A (en) * | 1988-10-25 | 1993-11-30 | Siemens Aktiengesellschaft | Circuit for detecting the failure of a load which is connected in series with an electronic switch |
US4893212A (en) * | 1988-12-20 | 1990-01-09 | North American Philips Corp. | Protection of power integrated circuits against load voltage surges |
IT1238305B (it) * | 1989-11-30 | 1993-07-12 | Sgs Thomson Microelectronics | "circuito di rilevamento della corrente in un transistore di potenza di tipo mos" |
US5164659A (en) * | 1991-08-29 | 1992-11-17 | Warren Schultz | Switching circuit |
JP2882163B2 (ja) * | 1992-02-26 | 1999-04-12 | 日本電気株式会社 | 比較器 |
-
1994
- 1994-12-22 GB GBGB9426007.2A patent/GB9426007D0/en active Pending
-
1995
- 1995-12-06 EP EP95937999A patent/EP0746905B1/de not_active Expired - Lifetime
- 1995-12-06 JP JP8519639A patent/JPH09509813A/ja active Pending
- 1995-12-06 KR KR1019960704592A patent/KR100355685B1/ko not_active IP Right Cessation
- 1995-12-06 DE DE69529974T patent/DE69529974D1/de not_active Expired - Lifetime
- 1995-12-06 WO PCT/IB1995/001097 patent/WO1996019870A1/en active IP Right Grant
-
1997
- 1997-10-17 US US08/953,103 patent/US5886543A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB9426007D0 (en) | 1995-02-22 |
US5886543A (en) | 1999-03-23 |
JPH09509813A (ja) | 1997-09-30 |
EP0746905A1 (de) | 1996-12-11 |
KR970701452A (ko) | 1997-03-17 |
KR100355685B1 (ko) | 2002-12-18 |
EP0746905B1 (de) | 2003-03-19 |
WO1996019870A1 (en) | 1996-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8332 | No legal effect for de |