EP0326020A3 - Verfahren und Vorrichtung zu Laserbonden - Google Patents

Verfahren und Vorrichtung zu Laserbonden Download PDF

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Publication number
EP0326020A3
EP0326020A3 EP19890100877 EP89100877A EP0326020A3 EP 0326020 A3 EP0326020 A3 EP 0326020A3 EP 19890100877 EP19890100877 EP 19890100877 EP 89100877 A EP89100877 A EP 89100877A EP 0326020 A3 EP0326020 A3 EP 0326020A3
Authority
EP
European Patent Office
Prior art keywords
bonding
electrical
bonding apparatus
laser bonding
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19890100877
Other languages
English (en)
French (fr)
Other versions
EP0326020A2 (de
Inventor
Daniel Marshall Andrews
Phillip James Spletter
Richard Linn Simmons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microelectronics and Computer Technology Corp
Original Assignee
Microelectronics and Computer Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microelectronics and Computer Technology Corp filed Critical Microelectronics and Computer Technology Corp
Publication of EP0326020A2 publication Critical patent/EP0326020A2/de
Publication of EP0326020A3 publication Critical patent/EP0326020A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
EP19890100877 1988-01-28 1989-01-19 Verfahren und Vorrichtung zu Laserbonden Withdrawn EP0326020A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/149,449 US4845335A (en) 1988-01-28 1988-01-28 Laser Bonding apparatus and method
US149449 1988-01-28

Publications (2)

Publication Number Publication Date
EP0326020A2 EP0326020A2 (de) 1989-08-02
EP0326020A3 true EP0326020A3 (de) 1991-10-16

Family

ID=22530329

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890100877 Withdrawn EP0326020A3 (de) 1988-01-28 1989-01-19 Verfahren und Vorrichtung zu Laserbonden

Country Status (5)

Country Link
US (1) US4845335A (de)
EP (1) EP0326020A3 (de)
JP (1) JPH01228142A (de)
AU (1) AU610974B2 (de)
CA (1) CA1311276C (de)

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US5008512A (en) * 1989-09-08 1991-04-16 Microelectronics And Computer Technology Corporation Method of laser bonding electrical members
US5049718A (en) * 1989-09-08 1991-09-17 Microelectronics And Computer Technology Corporation Method of laser bonding for gold, gold coated and gold alloy coated electrical members
DE3939812C2 (de) * 1989-12-01 1993-11-11 Deutsche Aerospace Laserlötsystem für SMD-Elemente
US5076485A (en) * 1990-04-24 1991-12-31 Microelectronics And Computer Technology Corporation Bonding electrical leads to pads with particles
US5083007A (en) * 1990-08-01 1992-01-21 Microelectronics And Computer Technology Corporation Bonding metal electrical members with a frequency doubled pulsed laser beam
DE4105875C1 (de) * 1991-02-25 1992-08-13 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De
US5379191A (en) * 1991-02-26 1995-01-03 Microelectronics And Computer Technology Corporation Compact adapter package providing peripheral to area translation for an integrated circuit chip
US5142118A (en) * 1991-05-14 1992-08-25 Progressive Tool & Industries Co. Laser welding unit
US5175410A (en) * 1991-06-28 1992-12-29 Digital Equipment Corporation IC package hold-down fixture
DE4200492C2 (de) * 1991-10-04 1995-06-29 Ghassem Dipl Ing Azdasht Vorrichtung zum elektrischen Verbinden von Kontaktelementen
US5314003A (en) * 1991-12-24 1994-05-24 Microelectronics And Computer Technology Corporation Three-dimensional metal fabrication using a laser
JP2813507B2 (ja) * 1992-04-23 1998-10-22 三菱電機株式会社 ボンディング方法およびボンディング装置
JPH0618433A (ja) * 1992-06-30 1994-01-25 Mitsubishi Electric Corp ボンディング装置及び方法
US5503948A (en) * 1994-08-02 1996-04-02 Microelectronics And Computer Technology Corporation Thin cell electrochemical battery system; and method of interconnecting multiple thin cells
US6236015B1 (en) 1995-10-31 2001-05-22 Hewlett-Packard Company Method for predicting and avoiding a bad bond when utilizing fiber push connect laser bonding
TW309483B (de) * 1995-10-31 1997-07-01 Hewlett Packard Co
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
US6538229B1 (en) 1996-05-08 2003-03-25 Infineon Technologies Ag Method for the positionally accurate adjustment and fixing of a microoptical element
DE19618533A1 (de) * 1996-05-08 1997-11-13 Siemens Ag Vorrichtung zur ortsgenauen Fixierung von Mikrochips
US5731244A (en) * 1996-05-28 1998-03-24 Micron Technology, Inc. Laser wire bonding for wire embedded dielectrics to integrated circuits
US5847356A (en) * 1996-08-30 1998-12-08 Hewlett-Packard Company Laser welded inkjet printhead assembly utilizing a combination laser and fiber optic push connect system
DE19749909C2 (de) * 1996-12-10 2000-08-31 Fraunhofer Ges Forschung Vorrichtung zum Herstellen von Verbindungen zwischen jeweils zwei Kontaktelementen mittels Laserenergie
US5980812A (en) 1997-04-30 1999-11-09 Lawton; John A. Solid imaging process using component homogenization
US5873511A (en) * 1997-05-08 1999-02-23 Shapiro; Herbert M. Apparatus and method for forming solder bonding pads
DE19751487A1 (de) * 1997-11-20 1999-06-02 Pac Tech Gmbh Verfahren und Vorrichtung zur thermischen Verbindung von Anschlußflächen zweier Substrate
DE19840226B4 (de) * 1998-09-03 2006-02-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen eines Schaltungschips auf einen Träger
FR2802764B1 (fr) * 1999-12-17 2002-11-08 Framatome Connectors Int Methode et dispositif de soudure de composants
DE10036901C2 (de) * 2000-07-28 2002-08-01 Siemens Ag Verfahren und Vorrichtung zur Erzeugung einer Laserschweißverbindung
GB2376201A (en) * 2001-09-26 2002-12-11 Bookham Technology Plc Joining method
US6796636B2 (en) * 2002-12-17 2004-09-28 Lexmark International, Inc. Two shot molded inkjet printhead lid for laser welding
JP3791501B2 (ja) * 2003-02-26 2006-06-28 セイコーエプソン株式会社 回路基板、半導体装置、半導体製造装置、回路基板の製造方法および半導体装置の製造方法
JP4842118B2 (ja) 2006-01-24 2011-12-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4722757B2 (ja) * 2006-04-19 2011-07-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8319145B2 (en) * 2006-07-10 2012-11-27 Lazare Kaplan International, Inc. System and method for gemstone micro-inscription
CN102427909B (zh) * 2009-05-15 2014-08-06 丰田自动车株式会社 电池的制造方法
KR101887655B1 (ko) * 2016-10-12 2018-09-10 주식회사 디에스케이 수평형 피씨비 본딩 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2227324A1 (de) * 1972-06-05 1973-12-20 Licentia Gmbh Verfahren zum zerteilen einer eine vielzahl von halbleiteranordnungen enthaltenden halbleitscheibe
GB1475831A (en) * 1973-06-27 1977-06-10 Cii Honeywell Bull Method and apparatus for processing semi-conductor integrated circuit chips
EP0117348A1 (de) * 1982-12-06 1984-09-05 The Welding Institute Verfahren zum Anschweissen von Drähten an Halbleiterbauelemente
EP0140126A1 (de) * 1983-10-07 1985-05-08 Siemens Aktiengesellschaft Verfahren zur Mikropackherstellung
EP0218069A1 (de) * 1985-09-19 1987-04-15 Siemens Aktiengesellschaft Verfahren zum Verschweissen mittels Laserlicht
EP0224113A1 (de) * 1985-11-25 1987-06-03 International Business Machines Corporation Verfahren und Vorrichtung zum Laserstrahl-Schneiden von Verbundwerkstoffen
DE3544377A1 (de) * 1985-12-14 1987-06-19 Bbc Brown Boveri & Cie Verfahren und vorrichtung zum verbinden eines halbleiters mit anschlussdraehten
US4684779A (en) * 1986-01-22 1987-08-04 General Motors Corporation Laser welding metal sheets with associated trapped gases

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US4341942A (en) * 1978-10-31 1982-07-27 International Business Machines Corporation Method of bonding wires to passivated chip microcircuit conductors
US4394711A (en) * 1979-06-01 1983-07-19 Interconnection Technology, Inc. Circuit board with weldable terminals
US4330699A (en) * 1979-07-27 1982-05-18 The United States Of America As Represented By The Secretary Of The Navy Laser/ultrasonic welding technique
JPS6032553B2 (ja) * 1980-02-15 1985-07-29 新日本製鐵株式会社 物体の接合法
US4320281A (en) * 1980-07-31 1982-03-16 Western Electric Company, Inc. Laser bonding technique and article formed thereby
US4404453A (en) * 1981-09-10 1983-09-13 Asta, Ltd. Laser bonding of microelectronic circuits
US4534811A (en) * 1983-12-30 1985-08-13 International Business Machines Corporation Apparatus for thermo bonding surfaces
US4727246A (en) * 1984-08-31 1988-02-23 Casio Computer Co., Ltd. IC card
NL8403735A (nl) * 1984-12-07 1986-07-01 Skf Ind Trading & Dev Werkwijze voor het aaneenlassen van twee delen.

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2227324A1 (de) * 1972-06-05 1973-12-20 Licentia Gmbh Verfahren zum zerteilen einer eine vielzahl von halbleiteranordnungen enthaltenden halbleitscheibe
GB1475831A (en) * 1973-06-27 1977-06-10 Cii Honeywell Bull Method and apparatus for processing semi-conductor integrated circuit chips
EP0117348A1 (de) * 1982-12-06 1984-09-05 The Welding Institute Verfahren zum Anschweissen von Drähten an Halbleiterbauelemente
EP0140126A1 (de) * 1983-10-07 1985-05-08 Siemens Aktiengesellschaft Verfahren zur Mikropackherstellung
EP0218069A1 (de) * 1985-09-19 1987-04-15 Siemens Aktiengesellschaft Verfahren zum Verschweissen mittels Laserlicht
EP0224113A1 (de) * 1985-11-25 1987-06-03 International Business Machines Corporation Verfahren und Vorrichtung zum Laserstrahl-Schneiden von Verbundwerkstoffen
DE3544377A1 (de) * 1985-12-14 1987-06-19 Bbc Brown Boveri & Cie Verfahren und vorrichtung zum verbinden eines halbleiters mit anschlussdraehten
US4684779A (en) * 1986-01-22 1987-08-04 General Motors Corporation Laser welding metal sheets with associated trapped gases

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Vol. 31, No. 6, November 1986, pages 385-389, New York, US; "Laser microwelding of tape automated bonding components for surface-mounted technologies". *
Proceedings of the International Conference on IECON, Vol. 2, 3-6 November 1987, pages 717-721, Cambridge, MA, US; R. VANZETTI et al.: "New laser soldering has vision". *

Also Published As

Publication number Publication date
CA1311276C (en) 1992-12-08
AU2879989A (en) 1989-08-03
US4845335A (en) 1989-07-04
AU610974B2 (en) 1991-05-30
EP0326020A2 (de) 1989-08-02
JPH01228142A (ja) 1989-09-12

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