EP0264315A1 - Wellenfortpflanzungsstrukturen für die Überspannungsunterdrückung und die Absorbierung von vorübergehenden Wellen - Google Patents

Wellenfortpflanzungsstrukturen für die Überspannungsunterdrückung und die Absorbierung von vorübergehenden Wellen Download PDF

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EP0264315A1
EP0264315A1 EP87402086A EP87402086A EP0264315A1 EP 0264315 A1 EP0264315 A1 EP 0264315A1 EP 87402086 A EP87402086 A EP 87402086A EP 87402086 A EP87402086 A EP 87402086A EP 0264315 A1 EP0264315 A1 EP 0264315A1
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dielectric
structure according
linear
essentially
conductive
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French (fr)
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EP0264315B1 (de
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Ferdy Mayer
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B11/00—Communication cables or conductors
    • H01B11/18—Coaxial cables; Analogous cables having more than one inner conductor within a common outer conductor
    • H01B11/1834—Construction of the insulation between the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B11/00—Communication cables or conductors
    • H01B11/02—Cables with twisted pairs or quads
    • H01B11/12—Arrangements for exhibiting specific transmission characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors

Definitions

  • SiC silicon carbide surge arresters
  • ZnO zinc oxide
  • n being the coefficient of non-linearity, describing "the slope" of non-linearity (typically varying from 3 to 10 for a resistance to SiC, and from 20 to 70 for resistance to ZnO) and k a constant defining the range of conductivity obtained.
  • the non-linear medium intervenes in
  • parasitic inductance parasitic capacitance
  • this dielectric acts normally, like conventional insulator. Only in the event of disturbing overvoltages appearing, this dielectric conducts and "short-circuits" these overvoltages (to ground, or to another conductor).
  • Such a structure therefore acts both as a distributed voltage limiter and as a distributed low-pass filter (insofar as the losses increase with frequency).
  • the practical interest of the invention lies in the concept of a suppression of distributed overvoltage, making it possible to distribute the dissipated power (overvoltages conducted to ground or to another conductor) and to eliminate the drawbacks of the components (dipoles) conventional nonlinear, such as unfavorable responses in fast transient conditions.
  • the dielectric used is represented by a non-linear composite, that is to say behaving essentially as an insulator at normal voltages (applied to the quadrupole (tripole), but becoming essentially conductive, when overvoltages appear at the terminals. quadrupole (tripole).
  • non-linear dielectrics used: it goes without saying that these examples are not limiting , where, in particular, the non-linear dielectrics described can be applied without distinction to the various embodiments, as the non-linear dielectric media can be compact, or made of thermoplastic or thermosetting composites. The examples chosen are typical; it goes without saying also that the principles used can be applied to all other structures with free or guided wave propagation.
  • FIG. 4 which describes a typical coaxial cable, according to the invention
  • 1 represents the central conductor, made of conductive material (metal or alloy), solid, stranded, or in layers.
  • This conductor can possibly be covered with a thin conductive layer, chemically compatible with the non-linear dielectric layer 2.
  • This last layer in fact, must be in direct contact of good quality, so as not to introduce parasitic conduction effects. (speaking on G).
  • a layer 3 can be provided for this purpose, consisting, for example, of a metallization of the dielectric 2 (Silvering , Indium deposition, Conductive polymer, Metallic thin foil, Colamine, etc.).
  • Layer 4 can be a conventional metal braid, a sheet of conductive wires, a metal tube, etc., intended to make the electrical connection.
  • Layer 5 represents a mechanical protection of the line element or the cable, such as a layer of plastic, polymer, armor, etc. It can also, or additionally represent a more or less conductive, more or less absorbent dielectric layer (according to the techniques described in French patent no. 78.333.35), or even be produced with a non-linear dielectric of the same kind as that of layer 2, to suppress currents / overvoltages of external common mode.
  • the medium 2 is produced, in a first example, by a flexible non-linear dielectric, produced according to known means, described in the references in the preambles.
  • a mixture of a sintered SiC powder, with high conductivity (NORTON 254 type, from Carborundum) by n or p doping, crushed to a grain size (multi-crystalline aggregates, comprising multiple active interfaces) in the range of 30 to 200 ⁇ , optionally selected in particle size distribution, is integrated, by mixing, in a flexible matrix material, such as plastic (PVC, etc.) or polymer (Silicone, EPDM etc.) with a SiC concentration by volume from 15% to 75%, equivalent to about 20 0/0 to 94% by weight, depending on the density of the matrix material.
  • NORTON 254 type from Carborundum
  • the mixture is then extruded / injected, and crosslinked, if necessary, around the central conductor.
  • a charge at 73% by weight of doped SiC, with a regular particle size distribution between 50 and 150 ⁇ is extruded under the diameter of 5 mm, around a central conductor of diameter 2 mm, and then the external electrode put in place.
  • a shunt current of 0.72 uA is raised under a voltage U of 100v, increasing to 2.68mA under a voltage U of 1000v. This corresponds to an average non-linearity coefficient of 3.57.
  • the dielectric of the cable is essentially insulating; while under 1000v (overvoltage) the dielectric is essentially conductive.
  • One of the characteristics of the invention consists in the distribution of the Joule effects, in the case of significant overvoltages, of appreciable duration: therefore, much higher powers can be allowed, compared with the conventional SiC and ZnO protection components. Particular effects may appear in the case of composite dielectrics, according to the invention.
  • a non-linear dielectric based on agglomerates of zinc oxide crystals as used in varistors (MOV's) (electronic components protection).
  • MOV's varistors
  • These agglomerates are obtained by crushing sintered parts, for example, and placed in a matrix material as described above, with a mass load of at least 30% of agglomerates, containing at least half of grains of dimensions greater than 100 ⁇ .
  • a low charge (a few%) of conductive graphite is added to promote the number of contacts between agglomerates.
  • the exponent of non-linearity obtained is approximately 5.1, with conductivities (coefficient k) of an order of magnitude greater.
  • a non-linear dielectric As a third example, adapted to currents of an order of magnitude still beyond (ie even lower operating voltages) a non-linear dielectric, using agglomerates of crystals of SiC and titanium carbide , with additions of very fine conductive particles, intended to perfect the contacts between agglomerates.
  • This composite is known commercially as CHOTRAP (Chomerics), already mentioned. It makes it possible to reach exponants of non-linearity n of the order of 7.
  • the relative permittivity of this composite is approximately 15 (100 Hz), decreasing to 13 (1 MHz), at low test voltage.
  • the current, for 1 m of cable described, is 3.7 A at a maximum voltage U of 120v (essentially conductive condition). Under the normal operating voltage of 24v, the current is 47 ⁇ A in insulating condition.
  • the dielectric constant in the event of overvoltage is multiplied by a coefficient of 50 to 100, and the same is true for intrinsic dielectric losses (not due to conduction).
  • Another important aspect of the invention is thus arrived at by the very large variation in the distributed capacity of the structure to completely change the propagation characteristic. Indeed, a line normally adapted (in the event of low voltage) becomes highly mismatched and most of the signal corresponding to the overvoltage is reflected at the input, a third effect which contributes to protection against overvoltage. Immediate applications of these phenomena, by analogy with the TR and ATR cells of radars, are possible. We also mention the fact that the very strong increase in dielectric losses (in the event of overvoltage) increases dielectric absorption, the fourth protective effect.
  • a non-linear dielectric medium will be indicated, with additional magnetic characteristics, as well as some typical examples of the constitution of such a composite, describing one of the important characteristics of the invention.
  • ferrites are a good choice, starting from high permeability, reduced conduction (in the compact state) and various other criteria defined in detail in French Patent No. 78.333.85.
  • Constituted by poorly conductive crystals characteristics at the base of the ferrites produced, they comprise crystalline interstices, with relatively conductive phases: in other words the classical ferrites are not suitable a priori for achieving non-linear effects.
  • ad hoc ferrites can be produced, in which the interstices are optimized for the application according to the invention: for this, it is first necessary to introduce a certain conductivity in the crystals themselves, so as to be able to obtain good conduction under a high electric field (where the Tunnel and / or Schottky effect eliminates the effect of the insulating gaps). It is then necessary to introduce, by weak additions of metals or metallic salts, which do not integrate into the magnetic structure of crystals (or domains), but which segregate in the form of compounds with little or no conductivity, in the interstices between crystals.
  • a second technique according to the invention consists in producing afterwards (after the sintering of the ferrite) such interstices by an ad hoc treatment of the ferrite, which is put into powder form.
  • the application of such essentially insulating thin layers in the form of a deposit in adhesion primer solution, of photopolymerization in the vapor phase of polymer, of chemical treatment of grains, including oxidation in air, etc., is known in itself, in processing techniques in the chemical industry.
  • z corresponds to typical impurities (O to some olo), intended to favor the formation of the deserted intergranular phases containing these oxides, (and others, such as the salts of Sb, Pr, Ba, Sr, Nd, Rb , Zr, Co, etc.) and more complex phases, also containing the basic constituents of ferrite (such as ZnO, for example).
  • these additives composed of oxides strongly basic conductors, with insulating acid oxides favor the formation of interstitial layers with little or no conductivity, and the known factors intervening on the size of the ferrite crystals (such as CaO, for example) make it possible to define, the number of Schottky junctions , ie the voltage where the nonlinear effects take place.
  • x corresponds to the amount of Mno, typically in the range of a mole percentage of 20 to 50% and y to the amount of Zno in the range of a mole percentage of 0 to 40%.
  • the sum of the percentages x + y + z can be different from the unit insofar as the composition of the ferrite is not stoechrometic, more particularly to meet the condition of good conductivity of the grains).
  • Excess iron Excess iron (appearing in the two valences) is also a factor favoring non-linear phenomena.
  • Such typical artificial ferrite exemplary thereafter contains a mole percentage of 40% MnO and 14% ZnO (25% and 10 0/0 by weight) with 2 mol% Ti0 2 and 0.6 mol% of Co, as additives, for the formation of the deserted interstitial layers.
  • Ferrite provides high permeability, with high magnetic losses, for use as an HF absorbent; its dielectric losses show a maximum in HF, characteristic of the Maxwell-Wagner effect, due to a conductive phase and a quasi-insulating phase.
  • This ferrite can be used in compact form, or in composite, according to the invention.
  • a composite produced, with 85% by weight of ferrite (crushed, with a distribution of linear particle size, between 50 and 200 ⁇ in size of agglomerates), and 15% by weight of polyvinyl chloride ( PVC), a conductivity close to that of the cited example of the SiC composite is obtained, with an exponent of non-linearity n 4 to 4.5 for 4 decades of current.
  • the electric cable leads in shunt 0.6 mA at 200v (essentially insulating condition) and 0.45 A at 1000v (essentially conductive condition).
  • An “artificial ferrite” of the second type uses, for example, an Mn-Zn ferrite powder of the conventional type, (without special interfacial layer).
  • This powder is surface treated in an aqueous or alcoholic solution of silane (such as for example vinyl-tri ( ⁇ -methoxy-etoxy-silane) ("A-172”), then dried with heat, and annealed to 150 "for 2 hours.
  • silane such as for example vinyl-tri ( ⁇ -methoxy-etoxy-silane) ("A-172”
  • A-172 vinyl-tri ( ⁇ -methoxy-etoxy-silane)
  • the number of active gaps (depleted areas) determines the overall voltage drop (for a given thickness of non-linear material), and the use of larger, more conductive grains, makes it possible to increase the non-linear current, for a given electric field.
  • a commercial product, H7C4 power ferrite (TDK), using additions of Si0 2 and CaO in the interstices, with an adequate heat treatment (in a controlled atmosphere) to have large crystals, is suitable for increasing the conductivity of an order of magnitude, compared to the example above.
  • ferrites large crystals, conductive crystals etc.
  • additions of agglomerates of SiC and / or ZnO with large grains, and fine metallic additions, possibly ferromagnetic (carbonyl iron , coprecipitated iron-nickel alloys, etc.) may be suitable.
  • Such magnetic structures are particularly suitable for the suppression of parasites, by clipping (in the time domain) and by HF absorption (in the frequency domain): they represent an ideal solution for interference suppression and immunization EMC where high overvoltages can appear (EMP, lightning strike, inductive cutoff on automobile network), with fast wave fronts (HEMP), with possible transients of very short duration (Corona, automobile ignition parasites , electrostatic discharges).
  • EMC interference suppression and immunization
  • FIG. 5 one of the multiple variants of electric cable that can be produced is described, with the principles described with the aid of FIG. 4. It is a multiconductor cable (typically a low electric power distribution cable). -tension), with two phases and earth, or with 3 phases.
  • a multiconductor cable typically a low electric power distribution cable.
  • the non-linear dielectric 2 intervenes, between phases, for a double thickness, that is to say a double voltage (voltage between phases), where it occurs in simple , with respect to the earth:
  • the metallic / metallized layer 3 defines the electric field, which determines the non-linear current due to the differential overvoltages.
  • a common mode protection can be provided by the external layer 5.
  • Figure 6 which describes a flat line, as it can be used in flat cables, hybrid circuits, propagation structures on printed circuits, or surface mounted components (SMD).
  • SMD surface mounted components
  • the conductors 1 and 3 define the electrodes of the line; the non-linear dielectric 2 can use any of the compact or composite materials according to the invention.
  • FIG. 7 representing an insulated cable, 1 corresponds to the bare central conductor, 2 to the "insulating" dielectric, 3 'and 3 "to the localized presence of a ground.
  • the dielectric 2 is made completely (or partially, in the radial direction of the cable) by a non-linear dielectric: any local high field gradient, will give rise to a weak conduction, and consequently, to a spreading field lines, avoiding breakdown.
  • a typical application case corresponds to that of the ignition cable of an automobile engine.
  • the conductor 1 can be straight (made of conductive or resistant metal, or of a more or less conductive composite, such as a carbon composite) or even be constituted by a helix around a core non-magnetic or magnetic absorbent, according to France patents no.78,333.85 and 86,000,617.
  • the thickness of the dielectric 2, in conventional insulation is limited in practice (for example, by standards, or by questions of cost price), the point of weakness of the insulation is located at the place 7 where the ignition cable is near or touches a metal part, such as an accelerator control cable, engine part, etc. : the fact of the embodiment according to the invention reduces the safety margin of the insulation.
  • a non-linear dielectric for the case of a very thin conductor 1 (straight or helical), the peak effect specific to this conductor can be "spread" by a non-linear dielectric according to the invention.
  • a conventional absorbent ignition wire on the market uses a helix with a diameter of 2.5 mm, made of metal wire with a diameter of 0.10 mm, with a pitch of about 30 turns per centimeter.
  • An internal layer (or the total layer) in non-linear dielectric, this time reduces the internal electrical stress.
  • Such ignition cables have electrical connections (attached to wire 1) at the ends, with insulating caps 6, made of rubber, plastic or polymer, to protect the connection with the spark plug or with the distributor.
  • non-linear function can be combined with the magnetic absorption effect (by the use of a non-linear magnetic compound / composite), giving the structure l absorbent low pass filter effect.
  • a typical combination consists in using a central core (for the helix) with nonlinear magnetic dielectric (protecting against the gradients of the fine wire of the helix), and an external "insulating" layer using one of the nonlinear composites little conductors described (magnetic or non-magnetic), suitable for the high voltages involved.
  • the nonlinear magnetic dielectric 2 In the right part of FIG. 8, the nonlinear magnetic dielectric 2 "plays the classic role of" equipotential sleeve "(references cited in the preamble), it will cover the stripped part (of the connection), with therefore a configuration similar to that of the previous example. As before, also, the non-linear magnetic dielectric can fill the entire cross section of the dielectric, where we therefore return to an embodiment according to the diagram in FIG. 1.
  • FIG. 9 the application of the principles of the invention to a free wave propagation structure is shown.
  • a plane em wave 8 is incident on the metal surface 3 of a mechanical structure, such as an airplane, vessel etc., this wave coming for example from a Radar beam and the surface 4 being an object to be detected, or else representing a lure.
  • an absorbent dielectric layer 2 is applied to the surface of the object 3, the characteristics of which are chosen to absorb the wave as well as possible (in its crossing of the layer 2) and to reflect this wave as little as possible, directly.
  • the embodiments of such dielectric layers are known, and generally use absorbent magnetic materials.
  • the dielectric layer 2 is made in part or completely of non-linear absorbent magnetic material, of ad-hoc characteristic impedance.
  • the reflectivity of the structure can be controlled between total absorption (disappearance of the object vis with respect to RADAR, this is at minimum RCS) and almost total reflection (maximum RCS), analogous to the mismatch effects for cables, described above.
  • FIG. 10 another application of the invention to a component for electronic circuits is shown, in which the concentration of the capacitive, absorption and non-linearity effects makes it possible to obtain useful practical filter components.
  • the conductor 1 can be made to include the terminal solder connections of the hot conductor, through. It can also be represented by an internal metallization of the passage in the dielectric 2, allowing the passage of a wire, a connection plug, etc.
  • the dielectric 2 is made of non-linear magnetic absorbent material, as described above ("artificial ferrite"). This gives the effect of a low-pass absorption filter, with shunt conduction protection, under the effect of an overvoltage.
  • a possible metallization 3 ensures contact with the ground electrode 4, forming the quadrupole / tri-pole.
  • the component according to the invention can be produced in a multiple form, that is to say where the parallel conductors 1 form a filter connector or else where metallized holes 1, as described, provide a filter base for integrated circuits, connectors, the connections of which then pass through the filter base.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Insulating Materials (AREA)
  • Emergency Protection Circuit Devices (AREA)
EP87402086A 1986-09-18 1987-09-18 Wellenfortpflanzungsstrukturen für die Überspannungsunterdrückung und die Absorbierung von vorübergehenden Wellen Expired - Lifetime EP0264315B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8613093 1986-09-13
FR8613093A FR2604286B1 (fr) 1986-09-18 1986-09-18 Structures a propagation d'onde pour la suppression de surtensions et l'absorption de transitoires

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EP0264315A1 true EP0264315A1 (de) 1988-04-20
EP0264315B1 EP0264315B1 (de) 1993-12-01

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EP (1) EP0264315B1 (de)
DE (1) DE3788335D1 (de)
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EP0828345A1 (de) * 1996-09-09 1998-03-11 Alcatel Cable France Elektrischer Leiter der geschützt ist gegen elektromagnetische Störungen, die eine Schwelle überschreiten

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JP5558583B2 (ja) 2009-12-08 2014-07-23 カーディアック ペースメイカーズ， インコーポレイテッド Ｍｒｉ環境における自動頻脈検出および制御を含んだ埋め込み可能な医療機器
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0429908A2 (de) * 1989-11-17 1991-06-05 Deutsche Aerospace AG Spannungsabhängiger Widerstand (Varistor) fÀ¼r Hochfrequenz-/Hochenergieanwendungen
EP0429908A3 (en) * 1989-11-17 1991-10-16 Telefunken Systemtechnik Gmbh Voltage dependent resistor (varistor) for high-frequency/high-energy applications
EP0828345A1 (de) * 1996-09-09 1998-03-11 Alcatel Cable France Elektrischer Leiter der geschützt ist gegen elektromagnetische Störungen, die eine Schwelle überschreiten
FR2753300A1 (fr) * 1996-09-09 1998-03-13 Alcatel Cable Conducteur electrique protege contre les perturbations electromagnetiques depassant un seuil
US6180877B1 (en) 1996-09-09 2001-01-30 Thomson-Csf Communications Electrical conductor protected against electromagnetic interference exceeding a threshold

Also Published As

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DE3788335D1 (de) 1994-01-13
EP0264315B1 (de) 1993-12-01
US4841259A (en) 1989-06-20
FR2604286B1 (fr) 1988-11-10
FR2604286A1 (fr) 1988-03-25

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