EP0234246A1 - Schaltkontaktstücke für Vakuumschaltgeräte und Verfahren zu deren Herstellung - Google Patents

Schaltkontaktstücke für Vakuumschaltgeräte und Verfahren zu deren Herstellung Download PDF

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Publication number
EP0234246A1
EP0234246A1 EP87100621A EP87100621A EP0234246A1 EP 0234246 A1 EP0234246 A1 EP 0234246A1 EP 87100621 A EP87100621 A EP 87100621A EP 87100621 A EP87100621 A EP 87100621A EP 0234246 A1 EP0234246 A1 EP 0234246A1
Authority
EP
European Patent Office
Prior art keywords
additives
base material
contact pieces
melting
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87100621A
Other languages
German (de)
English (en)
French (fr)
Inventor
Horst Dr. Kippenberg
Irmo Dr. Paulus
Reiner Dipl.-Ing. Müller
Rüdiger Dr. Hess
Hannelore Schnödt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0234246A1 publication Critical patent/EP0234246A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches

Definitions

  • the invention relates to switch contact pieces for vacuum switching devices, consisting of a base material with additions of easily vaporizable components for generating a sufficiently conductive switching path during the switch-off process.
  • the invention also relates to methods for producing such contact pieces.
  • the object of the invention is therefore to provide switch contact pieces of the type mentioned at the outset which have sufficient overvoltage-free switching behavior with good power switching capacity and are problem-free with regard to the connection technology with contact piece supports made of copper.
  • a major advantage of the solution according to the invention is that it can achieve both the desired overvoltage-free switching behavior and a satisfactory power switching capacity. Both are based on the fact that at small and medium-sized switching currents, where the surge-free switching behavior is required, the applied layer of easily evaporable additives takes effect and that at high currents, which require a safe switch-off, the high-energy switching arc pierces the base material and there does not release any other easily evaporable additives that impermissibly impede the extinguishing process.
  • Another advantage of the solution according to the invention is that a high quality and ductile base material can be used.
  • the known vacuum brazing processes can be retained when connecting to the contact carrier or the contact bolt, i.e. there are no problems with the connection technology.
  • a layer of selected additives should be applied to a base body made of a suitable contact material, for example of CuCr melting material:
  • the layer thickness should preferably be a few 1/100 mm to a few 1/10 mm. It However, layers of greater thickness (a few mm) can also be used if the layer is mixed with constituents of the base material for procedural reasons.
  • Suitable additives are, in particular, intermetallic compounds of the elements Se, Te, Pb, Bi with one another or with Ag, Al, Ba, Ca, Ce, In, La, Li, Sb, Sn, Sr, Ti or Zr or with Cu as the basic material. Mg or Sm are also possible for the formation of such phases. All elements have hitherto been known as additional components, especially for improvements in properties which increase the metal vapor density when subjected to arcing, e.g. to achieve a low breakaway current. For this purpose, reference is made, for example, to US Pat. No. 2,975,255, DE-A-10 81 950, DE-A-12 36 630, US Pat. No. 3 596 027 and DE-PS 21 24 707.
  • the melting or softening temperature of the layer should be selected higher than the soldering temperature used (e.g. T 800 ° C).
  • layer components with a corresponding melting point are: Ag2Se, Ag2Te. Al2Se3, Al2Te3, Ba2Bi3, Ba2Pb, Bi2Ca3, Bi3Ce4, Bi3La4, BiLi3, Bi2Mg3, Bi2Zr3, Ca2Pb, Ce2Pb, Cu2Se, Cu2Te, In2Se3, LaPb or La2Pb, P, LiTS , SeZn, TeTi, TeZn.
  • additives can also be used which react with the base material or a component thereof and on thus create such a layer that is stable at the soldering temperature.
  • additives are, for example, InSe, In2Te3, Sb2Se3 or Sb2Te3, which form suitable three-substance systems with Cu, for example, of a base material CuCr. Under no circumstances may the layer contain loosely bound particles, since this will impair the dielectric strength and switching behavior.
  • FIGS 1 to 3 show three different examples of manufacturing methods of contact pieces according to the invention.
  • the amount of powder is dimensioned such that a layer thickness of approximately 50 to 100 ⁇ m results after the end of the process.
  • a protective jacket or an elevated edge 13 of the body 10 prevents the powder from sliding down sideways or flowing down during the melting process.
  • the molded body 10 is heated with the powder 12 in a vessel 5 with vacuum (p ⁇ 10 -3 mbar) or in a dilute, high-purity inert gas atmosphere to approx. 950 ° C. and left at this temperature for some time (approx. 10-20 min).
  • the Ag2Se powder melts, binds to the CuCr base of the body 10 and forms the desired layer 14. After cooling, the edge 13 of the molded body 10 is twisted off.
  • the layer 14 can be used directly, ie without post-processing, as the contact surface of the contact piece thus produced.
  • a powder mixture of 20 to 25% Cr, 30 - 40% Sb2Te3 and the rest of Cu is pressed into a flat disc 22 of about 1 - 3 mm in height and applied to the surface 21 of a base body 20 made of CuCr, e.g. CuCr 50, laid with protective jacket 23.
  • the arrangement is heated to about 1000 ° C and kept at this temperature for 30 to 60 min.
  • a liquid phase sintering of the press disk 22 takes place and the Sb2Te3 melting at approx. 622 ° C preferably converts to Cu2Te.
  • An error-free connection to the surface 21 of the base body 20 made of CuCr results from the Sb dissolved in Cu.
  • the support 22 can then be machined to the layer 24 with the desired thickness.
  • a contact piece 30 made of CuCr e.g. made of CuCr 50
  • an approximately 50 ⁇ m thick layer 34 made of PbSe the layer 34 is produced in a known manner by vapor deposition of the additives 32 on the underside 31 of the contact piece 30 in the vacuum vessel 5 according to FIG. 1, for example by sputtering or ion plating.
  • Layer 34 can serve as a button without post-processing.
  • the proportion of the additives in relation to the base material can be varied in a suitable manner and be, for example, 30%, while in FIG. 1 and FIG. 3 there are pure additional cover layers.
  • at least one of such elements is used for the additives whose vapor pressure at 1000 ° C. is above approximately 1 mbar and which form intermetallic phases with one another or with other metals.
  • the vapor pressure of these phases is of different orders of magnitude than the vapor pressure of the individual components.
  • the intermetallic phase is broken down into components with the appropriate vapor pressure.
  • the intermetallic phases formed are not yet broken down, so that only the vapor pressure of these phases is decisive. As a result, there are no impairments in the soldering process due to excessive metal vapor development.
  • Table 1 lists some examples of breakaway currents as measured on contact pieces according to the invention, ie on CrCu contact bodies with a layer provided in the manner described:

Landscapes

  • Contacts (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Switches (AREA)
EP87100621A 1986-01-30 1987-01-19 Schaltkontaktstücke für Vakuumschaltgeräte und Verfahren zu deren Herstellung Withdrawn EP0234246A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3602835 1986-01-30
DE3602835 1986-01-30

Publications (1)

Publication Number Publication Date
EP0234246A1 true EP0234246A1 (de) 1987-09-02

Family

ID=6292991

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87100621A Withdrawn EP0234246A1 (de) 1986-01-30 1987-01-19 Schaltkontaktstücke für Vakuumschaltgeräte und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (1) US4749830A (enrdf_load_stackoverflow)
EP (1) EP0234246A1 (enrdf_load_stackoverflow)
JP (1) JPS62184727A (enrdf_load_stackoverflow)
CN (1) CN1008954B (enrdf_load_stackoverflow)
DD (1) DD253503A5 (enrdf_load_stackoverflow)
IN (1) IN170083B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3842919A1 (de) * 1988-12-21 1990-07-05 Calor Emag Elektrizitaets Ag Schaltstueck fuer einen vakuumschalter und verfahren zur herstellung eines solchen schaltstuecks oder eines entsprechend beschaffenen bauteils
DE19537657A1 (de) * 1995-10-10 1997-04-17 Abb Patent Gmbh Verfahren und Vorrichtung zur Herstellung eines Kontaktstückes

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0368860A1 (de) * 1987-07-28 1990-05-23 Siemens Aktiengesellschaft Kontaktwerkstoff für vakuumschalter und verfahren zu dessen herstellung
JP2643037B2 (ja) * 1991-06-17 1997-08-20 三菱電機株式会社 真空スイッチ管
CN100495608C (zh) * 2006-06-20 2009-06-03 杭州之江开关股份有限公司 断路器动触头辫子线冷挤压工艺
CN103824711B (zh) * 2013-12-20 2016-01-20 宁波赛特勒电子有限公司 一种双层银基复合氧化物电触点材料及其应用
CN104103435B (zh) * 2014-07-21 2016-07-13 南通万德科技有限公司 一种耐电弧烧蚀的钨合金开关触点及其制备方法
CN113293320B (zh) * 2021-06-21 2022-03-18 福州大学 一种Te元素掺杂四方相Sr2Sb材料及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH515599A (de) * 1970-03-26 1971-11-15 Siemens Ag Verfahren zur Herstellung eines Zweischichten-Kontaktstückes für Hochvakuumleistungsschalter
GB2105910A (en) * 1981-09-11 1983-03-30 Siemens Ag A contact member for vacuum isolating switches
GB2106141A (en) * 1981-09-16 1983-04-07 Mitsubishi Electric Corp Contactor for vacuum type circuit interrupter
EP0172411A1 (de) * 1984-07-30 1986-02-26 Siemens Aktiengesellschaft Vakuumschütz mit Kontaktstücken aus CuCr und Verfahren zur Herstellung dieser Kontaktstücke
EP0175349A2 (en) * 1984-09-19 1986-03-26 Hitachi, Ltd. Vacuum circuit breaker

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241567A (enrdf_load_stackoverflow) * 1958-07-24
GB1020914A (en) * 1961-11-10 1966-02-23 Gen Electric Improvements in vacuum circuit interrupter
JPS4836071B1 (enrdf_load_stackoverflow) * 1968-07-30 1973-11-01
JPS58108622A (ja) * 1981-12-21 1983-06-28 三菱電機株式会社 真空開閉器用電極材料
JPS58115728A (ja) * 1981-12-28 1983-07-09 三菱電機株式会社 真空しや断器用接点
JPS58165225A (ja) * 1982-03-26 1983-09-30 株式会社日立製作所 真空しや断器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH515599A (de) * 1970-03-26 1971-11-15 Siemens Ag Verfahren zur Herstellung eines Zweischichten-Kontaktstückes für Hochvakuumleistungsschalter
GB2105910A (en) * 1981-09-11 1983-03-30 Siemens Ag A contact member for vacuum isolating switches
GB2106141A (en) * 1981-09-16 1983-04-07 Mitsubishi Electric Corp Contactor for vacuum type circuit interrupter
EP0172411A1 (de) * 1984-07-30 1986-02-26 Siemens Aktiengesellschaft Vakuumschütz mit Kontaktstücken aus CuCr und Verfahren zur Herstellung dieser Kontaktstücke
EP0175349A2 (en) * 1984-09-19 1986-03-26 Hitachi, Ltd. Vacuum circuit breaker

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3842919A1 (de) * 1988-12-21 1990-07-05 Calor Emag Elektrizitaets Ag Schaltstueck fuer einen vakuumschalter und verfahren zur herstellung eines solchen schaltstuecks oder eines entsprechend beschaffenen bauteils
DE19537657A1 (de) * 1995-10-10 1997-04-17 Abb Patent Gmbh Verfahren und Vorrichtung zur Herstellung eines Kontaktstückes

Also Published As

Publication number Publication date
US4749830A (en) 1988-06-07
CN87100459A (zh) 1987-08-12
JPS62184727A (ja) 1987-08-13
IN170083B (enrdf_load_stackoverflow) 1992-02-08
DD253503A5 (de) 1988-01-20
CN1008954B (zh) 1990-07-25

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Inventor name: SCHNOEDT, HANNELORE

Inventor name: KIPPENBERG, HORST, DR.

Inventor name: PAULUS, IRMO, DR.

Inventor name: HESS, RUEDIGER, DR.

Inventor name: MUELLER, REINER, DIPL.-ING.