EP0146798B1 - Verfahren zum umweltfreundlichen Ätzen von Leiterplatten und Vorrichtung zur Ausübung des Arbeitsverfahrens - Google Patents

Verfahren zum umweltfreundlichen Ätzen von Leiterplatten und Vorrichtung zur Ausübung des Arbeitsverfahrens Download PDF

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Publication number
EP0146798B1
EP0146798B1 EP84114317A EP84114317A EP0146798B1 EP 0146798 B1 EP0146798 B1 EP 0146798B1 EP 84114317 A EP84114317 A EP 84114317A EP 84114317 A EP84114317 A EP 84114317A EP 0146798 B1 EP0146798 B1 EP 0146798B1
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EP
European Patent Office
Prior art keywords
etching
electrolytic cell
rinsing
copper
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP84114317A
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German (de)
English (en)
French (fr)
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EP0146798A3 (en
EP0146798A2 (de
Inventor
Walter Senator H.C. Dr.H.C.Ing. Holzer
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Individual
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Individual
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Publication date
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Priority to AT84114317T priority Critical patent/ATE51648T1/de
Publication of EP0146798A2 publication Critical patent/EP0146798A2/de
Publication of EP0146798A3 publication Critical patent/EP0146798A3/de
Application granted granted Critical
Publication of EP0146798B1 publication Critical patent/EP0146798B1/de
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions

Definitions

  • the invention relates to a method and a device for etching copper-containing objects, in particular printed circuit boards.
  • GB-A-2 103 154 describes such a method and such a device, wherein an etching vessel with an inflow tube for etching liquid is provided that opens into the etching tank in the bottom region. Baffles provided in the etching tank cause the etching liquid to swirl, so that fresh etching liquid is always offered to the object to be etched (the printed circuit board). The etching liquid then flows over the top edge of the inner etching container into an outer container and from there to an outlet. After the etching, the inner container together with the etched circuit board is washed with fresh water.
  • Post-published EP-A-122 963 describes a method and a plant for the regeneration of an ammoniacal etching solution, wherein on the one hand oxygen is fed to the etching solution for re-oxidation of the etchant contained in the etching solution and on the other hand at least part of the etching solution is led into an electrolysis cell in which the etched-off metal contained in the etching solution is cathodically deposited. Oxygen is generated at the anode. In order to achieve an intensive mixing of the etching solution with a gas containing oxygen, the oxygen formed at the anode is introduced directly into the etching solution. A liquid jet pump is used for this purpose. The etching solution serves as the working fluid for the liquid jet pump.
  • the invention is based on the object of proposing a method or a device with which copper-containing objects can also be etched in smaller systems, the etched-off copper being able to be recovered.
  • the invention is intended to work in an environmentally friendly manner and to be distinguished by good efficiency, even if it is a relatively small system, so that it can also be operated by a non-specialist, for example.
  • the etching solution can be regenerated and the etched copper is deposited in an electrolysis cell in order to avoid environmental pollution from waste materials. Since oxygen and ammonia are required for the regeneration of an ammoniacal etching solution, which is otherwise generated during electrolysis, these two resulting gases are sucked out of the electrolytic cell above the liquid level and fed to the etching solution via a water jet pump (injector), the intimate mixing of the gases with the Etching agent in the water jet pump ensures accelerated regeneration.
  • the copper deposition capacity of the electrolytic cell is higher than the etching capacity of the etching container, in order to prevent the etching agent from being overexposed to copper. It should therefore be possible to deposit more copper than is supplied to the etchant in the etching container.
  • electrolyte etchant
  • a continuous, metered supply of electrolyte (etchant) through the electrolytic cell is achieved, without a pump or other metering agent.
  • a common container is provided, which is divided by a partition into the etching chamber and the electrolysis cell, this partition being able to perform other tasks.
  • the dividing wall is formed from the anode sheet of the electrolytic cell which is required anyway and which has corresponding connecting openings. Openings are provided in the lower part of the partition (anode plate), which allow the inflow of etchant into the electrolysis cell. In the upper area of the partition (anode sheet), but still below the liquid level, there are also openings which allow the etchant to flow back out of the electrolytic cell into the etching container.
  • This arrangement leads to a continuous slow circulation of the etchant through the electrolysis cell, where the copper is deposited on the cathode.
  • the flow arises on the one hand from the gas bubbles that form during the chemical reaction (e.g. oxygen and ammonia) and on the other hand from the heating of the solution, since the electrolysis cell is supplied with the current required to separate the copper with considerable intensity.
  • the flow is supported by the reduction in the copper content due to deposits on the cathode and the resulting reduction in the specific weight of the electrolyte.
  • the anode plate is designed as a retractable partition, it is possible to adapt the intensity of the flow to the optimal conditions by the size and arrangement of the connecting holes, and even by changing the anode plates with different hole sizes, the flow of the electrolytic cell can be optimally adapted to the operating conditions of the system.
  • the ion exchangers are expediently designed as cassettes which are placed in chambers of the rinsing container, the excess detergent, which cannot flow through the cassettes in the free passage, directly going to the return to the pump. This also eliminates the need to connect or seal the ion exchanger in the chambers of the rinsing container.
  • a further improvement is that when the pump is switched off, the liquid level in the rinsing tank is set such that the ion exchange resin is always covered by the liquid.
  • the pump is switched on, the actual rinsing container is filled and rinsing liquid is pumped out of the chamber surrounding the ion exchanger. Since the rinsing liquid enters the ion exchanger at the top, there is a level difference which favors a flow through the ion exchanger.
  • the ion exchanger cassettes be at least partially transparent and that an ion exchange material be used which shows a color change when saturated.
  • a circulating pump 1 is shown schematically in FIG. 1, the pressure side 13 of which opens into a nozzle 9 via an injector 14.
  • the nozzle 9 is arranged in an etching or immersion container 5. Etching liquid is flung through the nozzle 9 against the surface of a circuit board 2 to be etched in such a way that a certain kinetic energy supports the etching process.
  • the injector 14 has a connection from its suction side 15 via a suction pipe 16 to a suction opening 17 which opens out above the liquid level 4 of an electrolysis cell 3.
  • An anode 8 (shown as a partition between the etching container 5 and the electrolysis cell 3) and a cathode 31 are arranged in the electrolysis cell 3 and serve to separate the etched-off copper.
  • the anode 31 in the direction of the arrow 32 can be designed to be removable, in order to avoid etching away the already deposited copper when it is not used for a long time, or to remove the deposited copper.
  • the holder with the circuit board 2 is inserted through a slot 27 into a rinsing chamber 12.
  • a circulation pump 29 with its pressure line 35 and nozzles 9 'ensures a turbulent flow through the washing container.
  • ion exchanger cassettes 37 can be used, through which the returning rinsing liquid flows.
  • the rinsing liquid enters the ion exchange cassette 37 at the top into an inlet opening 38, flows through ion exchange material 39 and reaches the return 36 of the pump 29 through an outlet.
  • the ion exchange cassettes 37 can be easily removed from the chambers 11 to contain the ion exchange material 39 to be regenerated after the material has been saturated.
  • An environmentally friendly, closed circuit is also implemented during rinsing, in which no harmful wastewater can escape to the outside.
  • Figure 1 also shows that all components of such an etching system are housed in a common container 40 which is closed by a lid 20.
  • a control cabinet 21 can also be arranged in the container 40, which contains all electrical components, e.g. also the two time switches 28 for the temporary activation of the circulation pumps 1 and 29.
  • the control cabinet 21 also contains corresponding transformers and rectifiers in order to supply the electrolysis cell with current.
  • Anode 8 is connected to plus and cathode 31 to minus.
  • a sensor 18 In order not to allow the deposition of the copper from the electrolyte or the etching solution to drop below a lower limit value, a sensor 18 automatically checks the density of the electrolyte.
  • the sensor 18 is designed as a float, which directly actuates a contact 19 via a linkage, which is expediently designed as a magnetic switch. As soon as the density of the electrolyte reaches a lower value due to the deposition of the copper, the float 18 sinks and the contact 19 opens and interrupts the power supply to the electrolysis cell.
  • FIG. 3 shows the condition of the rinsing chamber 12 when the pump 29 is switched on.
  • the level rises to an overflow level 42 and the rinsing liquid flows into the inlet openings 38 of the ion exchanger cassettes 37.
  • the pressure in the return line 36 reduces the water into the Chambers 11 up to a return level 43. This results in a pressure difference from the height of the inlet 38 to the return level 43, which determines the flow through the ion exchanger cassettes.
  • Partitions 41 prevent liquid balance between the overflow level 42 and the level 43 in the chambers 11.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
EP84114317A 1983-12-13 1984-11-27 Verfahren zum umweltfreundlichen Ätzen von Leiterplatten und Vorrichtung zur Ausübung des Arbeitsverfahrens Expired - Lifetime EP0146798B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT84114317T ATE51648T1 (de) 1983-12-13 1984-11-27 Verfahren zum umweltfreundlichen aetzen von leiterplatten und vorrichtung zur ausuebung des arbeitsverfahrens.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3345050 1983-12-13
DE19833345050 DE3345050A1 (de) 1983-12-13 1983-12-13 Verfahren zum umweltfreundlichen aetzen von leiterplatten und vorrichtung zur ausuebung des arbeitsverfahrens

Publications (3)

Publication Number Publication Date
EP0146798A2 EP0146798A2 (de) 1985-07-03
EP0146798A3 EP0146798A3 (en) 1986-05-21
EP0146798B1 true EP0146798B1 (de) 1990-04-04

Family

ID=6216822

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84114317A Expired - Lifetime EP0146798B1 (de) 1983-12-13 1984-11-27 Verfahren zum umweltfreundlichen Ätzen von Leiterplatten und Vorrichtung zur Ausübung des Arbeitsverfahrens

Country Status (7)

Country Link
US (1) US4595451A (enrdf_load_stackoverflow)
EP (1) EP0146798B1 (enrdf_load_stackoverflow)
JP (1) JPS61143583A (enrdf_load_stackoverflow)
AT (1) ATE51648T1 (enrdf_load_stackoverflow)
AU (1) AU573770B2 (enrdf_load_stackoverflow)
CA (1) CA1227111A (enrdf_load_stackoverflow)
DE (2) DE3345050A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839651A1 (de) * 1988-11-24 1990-05-31 Hoellmueller Hans Anlage zum aetzen von gegenstaenden
WO1991011544A1 (en) * 1990-01-30 1991-08-08 Uzhgorodsky Gosudarstvenny Universitet Method and device for regeneration of iron chloride solution for pickling of copper
DE4402788A1 (de) * 1994-01-31 1995-08-10 Emil Krechen Industrievertretu Verfahren zum Abtragen von Metallen
ES2114319T3 (es) * 1994-05-11 1998-05-16 Siemens Sa Dispositivo para el tratamiento de placas de circuitos impresos.
US5486282A (en) * 1994-11-30 1996-01-23 Ibm Corporation Electroetching process for seed layer removal in electrochemical fabrication of wafers
GB2316366A (en) * 1996-08-16 1998-02-25 Rolls Royce Plc Apparatus for chemically machining or etching metal components uses acid jets for agitation
US6372081B1 (en) 1999-01-05 2002-04-16 International Business Machines Corporation Process to prevent copper contamination of semiconductor fabs
US6348159B1 (en) 1999-02-15 2002-02-19 First Solar, Llc Method and apparatus for etching coated substrates
US6332973B1 (en) * 2000-01-25 2001-12-25 Advanced Micro Devices, Inc. CMOS chemical bath purification
US7597815B2 (en) * 2003-05-29 2009-10-06 Dressel Pte. Ltd. Process for producing a porous track membrane
DE102005015758A1 (de) * 2004-12-08 2006-06-14 Astec Halbleitertechnologie Gmbh Verfahren und Vorrichtung zum Ätzen von in einer Ätzlösung aufgenommenen Substraten

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008766B2 (de) * 1970-02-23 1971-07-29 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Verfahren zum regenerieren einer kupferhaltigen aetzloesung insbesondere fuer die herstellung von gedruckten schaltungen
NL7202652A (enrdf_load_stackoverflow) * 1971-03-08 1972-09-12
JPS4829977A (enrdf_load_stackoverflow) * 1971-08-20 1973-04-20
DE2241462A1 (de) * 1972-08-23 1974-03-07 Bach & Co Verfahren zum rueckgewinnen einer kupfer(ii)-chlorid enthaltenden aetzloesung
US3880409A (en) * 1973-04-18 1975-04-29 In Line Technology Inc Solution agitation apparatus
JPS5916984B2 (ja) * 1974-09-17 1984-04-18 アイシン精機株式会社 車両用制動油圧制御装置
US4073708A (en) * 1976-06-18 1978-02-14 The Boeing Company Apparatus and method for regeneration of chromosulfuric acid etchants
JPS556711A (en) * 1978-06-29 1980-01-18 Hitachi Cable Method of manufacturing flat cable
US4302273A (en) * 1980-06-04 1981-11-24 Rca Corporation Etching tank in which the solution circulates by convection
GB2103154A (en) * 1981-05-11 1983-02-16 Airvision Engineering Ltd Liquid treatment of articles
EP0122963B1 (de) * 1983-04-13 1988-06-01 Forschungszentrum Jülich Gmbh Anlage zum Regenerieren einer ammoniakalischen Ätzlösung
US4482425A (en) * 1983-06-27 1984-11-13 Psi Star, Inc. Liquid etching reactor and method

Also Published As

Publication number Publication date
US4595451A (en) 1986-06-17
JPH0573831B2 (enrdf_load_stackoverflow) 1993-10-15
DE3345050A1 (de) 1985-06-20
ATE51648T1 (de) 1990-04-15
EP0146798A3 (en) 1986-05-21
DE3345050C2 (enrdf_load_stackoverflow) 1993-01-21
EP0146798A2 (de) 1985-07-03
DE3481848D1 (de) 1990-05-10
AU573770B2 (en) 1988-06-23
JPS61143583A (ja) 1986-07-01
AU3664584A (en) 1985-06-20
CA1227111A (en) 1987-09-22

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