EP0111707A2 - Verfahren zur Herstellung von Belichtungspatronen - Google Patents

Verfahren zur Herstellung von Belichtungspatronen Download PDF

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Publication number
EP0111707A2
EP0111707A2 EP83110956A EP83110956A EP0111707A2 EP 0111707 A2 EP0111707 A2 EP 0111707A2 EP 83110956 A EP83110956 A EP 83110956A EP 83110956 A EP83110956 A EP 83110956A EP 0111707 A2 EP0111707 A2 EP 0111707A2
Authority
EP
European Patent Office
Prior art keywords
pattern
electron beam
exposure
exposure pattern
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP83110956A
Other languages
English (en)
French (fr)
Other versions
EP0111707A3 (de
Inventor
Fletcher Jones
Henry Rudolf Roelker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0111707A2 publication Critical patent/EP0111707A2/de
Publication of EP0111707A3 publication Critical patent/EP0111707A3/de
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31769Proximity effect correction
    • H01J2237/31771Proximity effect correction using multiple exposure
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143Electron beam

Definitions

  • This invention relates to methods of forming exposure patterns. Such patterns are formed during lightographic processes.
  • Electron beams can be formed with a very small diameter and have been used to write very high resolution patterns for microcircuit fabrication. Small diameter electron beams have been used not only as a direct writing lithography tool during fabrication of high density microcircuits but also indirectly to form high resolution masks for use in fabricating microcircuits.
  • a problem which has impeded more extensive use of high resolution electron beam lithography is "proximity effect.”
  • a material such as an electron beam sensitive resist
  • the high energy primary electrons in the beam collide with molecules in the material and become laterally deflected or scattered in a random process. Secondary electrons are also released by the collisions and travel not only in the forward direction but also laterally and in the backward direction. Back scattering of secondary electrons is particularly great at material interfaces such as the boundary between an electron beam sensitive resist and a supporting substrate.
  • the lateral spreading of the primary and secondary electrons causes nearby lateral regions to be exposed to scattered electrons.
  • a prior art method for avoiding proximity effects is to compensate for the expected added exposure contributed by electrons scattered from adjacent regions by correspondingly reducing the incident exposure dose of the region.
  • Elaborate computer programs have been developed which calculate the dose needed at each elemental region of a complex pattern so as to get a substantially uniform total exposure everywhere in the pattern. Isolated regions get a greater incident exposure than regions adjacent to other regions.
  • Another problem with the prior art technique of varying the exposure dose in order to compensate for proximity effect is that this technique cannot be used at all when the exposure process inherently produces a uniform incident exposure dose everywhere in the exposure pattern. This occurs, for example, if a mask is illuminated with an electron flood beam to form an electron beam exposure pattern or if a patterned layer directly emits a pattern of electrons. Such electron beam shadow masks and patterned electron emitters are not in practical use at this time but future development of such techniques is possible.
  • Another object is to improve electron beam exposure system thruput while maintaining electron beam resolution everywhere in the pattern and while maintaining a developed edge profile everwhere characteristic of an electron beam pattern exposure.
  • Still another object is to provide a pattern exposure method having improved electron beam exposure system thruput and reduced electron beam proximity effects without requiring computation of the exposure contribution from adjacent shapes due to lateral scattering effects.
  • a complete lithographic exposure pattern is formed in accordance with this invention by forming part of the complete pattern with electron beam radiation and forming the remaining part with light radiation.
  • the electron beam exposure pattern part delineates all of the edges of the desired complete pattern while the optical exposure pattern part fills in any remaining regions, together forming the desired complete exposure pattern. Since all edges are delineated by electron beam radiation, any radiation sensitive layer exposed to the complete pattern will develop edges characteristic of an electron beam pattern exposure.
  • Electron beam exposure system thruput is improved because the whole pattern in not exposed by electron beam.
  • the exposure width of the electron beam edge delineation is on the order of the minimum linewidth of the pattern, so that proximity effects will be automatically reduced or eliminated without requiring computation of the exposure contribution from adjacent shapes in the pattern due to lateral scattering effects and without requiring any variation in the applied electron beam exposure dose.
  • Use of a wider exposure width for electron beam delineation of pattern edges has the advantage that alignment tolerance of the optical exposure pattern part with respect to the electron beam exposure pattern part is increased.
  • the invention provides a method of forming an exposure pattern comprising the steps of; forming an electron beam exposure pattern corresponding with edge regions of a desired complete exposure pattern; forming an optical exposure pattern corresponding with non-edge regions of said desired complete exposure pattern; and superposing said electron beam exposure pattern and said optical exposure pattern to form said desired complete exposure pattern.
  • the invention also provides a method of forming a lithographic resist exposure pattern, comprising the steps of: delineating the edges of a desired resist pattern by exposing a radiation sensitive resist layer to a pattern of electron beam radiation corresponding with the edges of said desired resist pattern; filling in the non-edge regions of said desired resist pattern by exposing said radiation sensitive resist layer to a pattern of light radiation corresponding with the non-edge regions of said desired resist pattern; and developing said exposed resist layer to form said desired resist pattern.
  • the edge delineation with electron beam should be as narrow as practical in order to reduce undesirable proximity effects.
  • Undesirable proximity effects arise primarily from the excessive number of scattered electrons which are generated when an electron beam exposes a relatively large area.
  • the present invention automatically avoids proximity effects in large part.
  • the narrow bar 14 has a width equal to the minimum linewidth of the overall exposure pattern. Accordingly, the narrow bar 14 has been entirely exposed using electron beam radiation.
  • the other edges are delineated with a band of electron beam radiation also about equal to the minimum linewidth of the overall exposure pattern, as shown in FIG. 1. It is possible, however, for the width of the electron beam edge delineation to be either wider or narrower than the exposure pattern minimum linewidth.
  • an edge delineation of less width than the minimum linewidth might further reduce undesirable proximity effects.
  • a wider electron beam edge delineation is shown in FIG. 2.
  • a wider edge delineation with electron beam is useful, for example, for reducing the alignment accuracy required when superposing or overlaying the electron beam exposure pattern and the optical exposure pattern in accordance with this invention.
  • optical exposure patterns are difficult to form at a resolution of better than about one-half micron or so.
  • X-ray lithography might in the future extend this limit to some extent.
  • the present resolution limits for optical lithography suggests a practical minimum width for the electron beam edge bands of about one- half micron.
  • the optical exposure part 18 overlaps the electron beam exposure part 16.
  • FIG. 3 just the reverse is shown in FIG. 3 where there is a nominally unexposed band 20 between the optically exposed part 18 and the electron beam exposed part 16.
  • a nominally unexposed band can be tolerated because electrons will be scattered into the nominally unexposed band from the adjacent electron beam exposed band.
  • any line having a nominal exposure width will always develop into a somewhat wider line. This edge creep during development of an exposed pattern can be relied upon to remove a nominally unexposed band of suitably narrow width.
  • a nominally unexposed band 22 of suitably narrow width also may be present between two electron beam exposed edge delineations, as illustrated in FIG. 3. This nominally unexposed band 22 also will disappear during development, if it is sufficiently narrow.
  • FIG. 4 illustrates a slight misregistration or misalignment of the optically exposed pattern part of FIG. 2 with respect to the electron beam exposed pattern part.
  • the optical exposure pattern and the electron beam exposure pattern overlap.
  • the pattern to be formed in a resist layer is the T pattern 30 shown in FIG. 5.1.
  • the edges of the desired T pattern are first biased or moved inward to compensate for the edge creep (or movement of edges) which occurs when a nominally exposed pattern is developed.
  • the amount of this bias depends upon the composition and thickness of the radiation sensitive material to be exposed, as well as the type and dose of the pattern exposure at the edges thereof, the type and length of development, etc. In general the amount of bias needed is determined by exposing and developing a test pattern and then measuring the resulting amount of edge creep.
  • FIG. 5.2 An edge biased T pattern is shown in FIG. 5.2.
  • This biased pattern is also subdivided into two elemental shapes (a rectangle 32 and a square 34) as'is ordinarily done for a pattern to be electron beam written. Partitioning of electron beam patterns is done generally in order to facilitate data compaction and to simplify implementation of a pattern generator for controlling electron beam writing. Partitionment is not actually required by the method of this invention.
  • FIG. 5.3 the edges of each of the elemental shapes are delineated by electron beam exposure bands to form an electron beam exposure pattern 36.
  • edge band parts 38, 40 lie within the-T figure and do not actually delineate any outside edges of the complete pattern. This results in unnecessary electron beam exposure of some regions which could have been optically exposed, but it has no detrimental effect upon the resulting exposure pattern. If the electron beam writing system can just as well and just as efficiently expose only the outside edges of a complete unpartitioned pattern, then such an electron beam pattern is preferable assuming no other disadvantages are generated as a result.
  • FIG. 5.4 illustrates an alternative electron beam exposure pattern 36 corresponding to an unpartitioned exposure pattern.
  • optical exposure pattern 42 Superposed upon the electron beam exposure pattern 36 of F I G. 5.3 is an optical exposure pattern 42.
  • the illustrated optical exposure pattern also covers or overlaps edge band parts 38, 40, which do not correspond with outside edges of the complete pattern. It is alternatively possible in FIG. 5.3 to exclude edge band parts 38, 40 from the optical exposure pattern, if desired.
  • Optical exposure pattern 42 is also shown . in FIG. 5.4.
  • the composite exposure pattern in FIG. 5.4 will now be used to form a resist pattern.
  • the electron beam exposure pattern 36 is applied to a radiation sensitive resist layer 44 on an object 46 using a steered electron beam 48.
  • Suitable resists for this purpose are, for example, Shipley AZ1350J resist, Shipley AZ2400 resist, or a polymethylmethacrylate (PMMA) resist.
  • the optical exposure pattern 42 is applied to the radiation sensitive resist layer 44 by imaging a mask 50 with an optical flood beam 52.
  • the mask 50 may be prepared using standard lithographic techniques such as electron beam lithography.
  • a flood source 52 is used which emits light (preferably ultraviolet) in a range where the resist is sensitive.
  • Alignment of the mask 50 with respect to the exposure pattern 36 is done using standard alignment techniques.
  • Preferably both the electron beam exposure pattern 36 and the mask 50 are each. registered with respect to alignment marks (not shown) carried by the object 46.
  • Imaging of the mask onto the resist layer 44 may be done using contact or proximity or projection printing lithography techniques.
  • the exposed resist layer 44 has been developed. If'the resist is positive acting, the exposed regions will dissolve away, as shown, leaving a T-shaped opening through the resist layer. If the resist is negative acting, the unexposed regions of the resist layer will dissolve away instead.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP83110956A 1982-12-20 1983-11-03 Verfahren zur Herstellung von Belichtungspatronen Withdrawn EP0111707A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/451,682 US4717644A (en) 1982-12-20 1982-12-20 Hybrid electron beam and optical lithography method
US451682 1989-12-18

Publications (2)

Publication Number Publication Date
EP0111707A2 true EP0111707A2 (de) 1984-06-27
EP0111707A3 EP0111707A3 (de) 1986-09-10

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EP (1) EP0111707A3 (de)
JP (1) JPS59117214A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1887614A1 (de) * 2005-06-03 2008-02-13 Advantest Corporation Strukturierungsverfahren

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JPS6247129A (ja) * 1985-08-26 1987-02-28 Fujitsu Ltd 半導体装置の製造方法
JP2617923B2 (ja) * 1986-09-16 1997-06-11 松下電子工業株式会社 パターン形成方法
US4812962A (en) * 1987-04-09 1989-03-14 Harris Corp. Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns
US4816361A (en) * 1987-11-27 1989-03-28 The United States Of America As Represented By The Secretary Of The Army Patterning optical and X-ray masks for integrated circuit fabrication
US4797334A (en) * 1987-12-14 1989-01-10 The United States Of America As Represented By The Secretary Of The Army Patterning optical and X-ray masks for integrated circuit fabrication
JP2680074B2 (ja) * 1988-10-24 1997-11-19 富士通株式会社 荷電粒子ビーム露光を用いた半導体装置の製造方法
JPH02210814A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 半導体装置の製造方法
US5182718A (en) * 1989-04-04 1993-01-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
EP0433467B1 (de) * 1989-12-18 1995-08-16 International Business Machines Corporation Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken
US5327338A (en) * 1990-01-31 1994-07-05 Etec Systems, Inc. Scanning laser lithography system alignment apparatus
US6109775A (en) * 1991-07-19 2000-08-29 Lsi Logic Corporation Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon
US5379233A (en) * 1991-07-19 1995-01-03 Lsi Logic Corporation Method and structure for improving patterning design for processing
US5251140A (en) * 1991-07-26 1993-10-05 International Business Machines Corporation E-beam control data compaction system and method
US5159201A (en) * 1991-07-26 1992-10-27 International Business Machines Corporation Shape decompositon system and method
US5663893A (en) * 1995-05-03 1997-09-02 Microunity Systems Engineering, Inc. Method for generating proximity correction features for a lithographic mask pattern
US6529621B1 (en) 1998-12-17 2003-03-04 Kla-Tencor Mechanisms for making and inspecting reticles
US6516085B1 (en) 1999-05-03 2003-02-04 Kla-Tencor Apparatus and methods for collecting global data during a reticle inspection
US6778695B1 (en) * 1999-12-23 2004-08-17 Franklin M. Schellenberg Design-based reticle defect prioritization
US6966047B1 (en) 2002-04-09 2005-11-15 Kla-Tencor Technologies Corporation Capturing designer intent in reticle inspection
JP2004136432A (ja) * 2002-09-24 2004-05-13 Nihon Micro Coating Co Ltd 研磨布及びその製造方法
JP5499761B2 (ja) * 2010-02-23 2014-05-21 富士通セミコンダクター株式会社 露光方法及び半導体装置の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1887614A1 (de) * 2005-06-03 2008-02-13 Advantest Corporation Strukturierungsverfahren
EP1887614A4 (de) * 2005-06-03 2008-12-24 Advantest Corp Strukturierungsverfahren

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Publication number Publication date
EP0111707A3 (de) 1986-09-10
US4717644A (en) 1988-01-05
JPS59117214A (ja) 1984-07-06

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