DE68923880T2 - Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken. - Google Patents
Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken.Info
- Publication number
- DE68923880T2 DE68923880T2 DE68923880T DE68923880T DE68923880T2 DE 68923880 T2 DE68923880 T2 DE 68923880T2 DE 68923880 T DE68923880 T DE 68923880T DE 68923880 T DE68923880 T DE 68923880T DE 68923880 T2 DE68923880 T2 DE 68923880T2
- Authority
- DE
- Germany
- Prior art keywords
- exposure
- self
- production
- semiconductor bodies
- complementary patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0278—Röntgenlithographic or X-ray lithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Semiconductor Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP89123346A EP0433467B1 (de) | 1989-12-18 | 1989-12-18 | Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68923880D1 DE68923880D1 (de) | 1995-09-21 |
DE68923880T2 true DE68923880T2 (de) | 1996-04-18 |
Family
ID=8202242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68923880T Expired - Fee Related DE68923880T2 (de) | 1989-12-18 | 1989-12-18 | Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5166888A (de) |
EP (1) | EP0433467B1 (de) |
JP (1) | JPH0766182B2 (de) |
KR (1) | KR940002739B1 (de) |
CN (1) | CN1041665C (de) |
CA (1) | CA2032413C (de) |
DE (1) | DE68923880T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364716A (en) * | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
US5452224A (en) * | 1992-08-07 | 1995-09-19 | Hughes Aircraft Company | Method of computing multi-conductor parasitic capacitances for VLSI circuits |
KR100208441B1 (ko) * | 1995-06-15 | 1999-07-15 | 김영환 | 포토마스크의 패턴 구조 |
JP3940824B2 (ja) * | 1995-08-14 | 2007-07-04 | 株式会社ニコン | 荷電粒子線によるパターン転写方法および転写装置 |
JP3045114B2 (ja) * | 1997-08-19 | 2000-05-29 | 日本電気株式会社 | 荷電粒子線描画用データ作成方法並びに描画用パターンデータ作成プログラムを記録した記録媒体 |
US6383847B1 (en) * | 2000-10-30 | 2002-05-07 | International Business Machines Corporation | Partitioned mask layout |
JP4746753B2 (ja) | 2001-03-05 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 荷電粒子線露光用マスクの形成方法および荷電粒子線用マスクを形成するためのパターンデータの処理プログラム |
CN1295563C (zh) * | 2001-05-18 | 2007-01-17 | 皇家菲利浦电子有限公司 | 制造器件的光刻法 |
US6830852B2 (en) * | 2001-07-19 | 2004-12-14 | Nikon Corporation | Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles |
JP2003045786A (ja) * | 2001-08-01 | 2003-02-14 | Seiko Instruments Inc | ステンシルマスクのレイアウト図形データ分割処理装置、ステンシルマスクのレイアウト図形データ分割処理方法、コンピュータにステンシルマスクのレイアウト図形データ分割処理を行わせるためのプログラム |
JP2006261422A (ja) * | 2005-03-17 | 2006-09-28 | Nec Electronics Corp | 半導体装置製造用マスクおよびそのマスクで製造された半導体装置 |
US7642532B2 (en) * | 2006-01-26 | 2010-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aperture design for improving critical dimension accuracy and electron beam lithography throughput |
CN104157550B (zh) * | 2014-07-28 | 2016-08-31 | 京东方科技集团股份有限公司 | 薄膜图形化方法及掩膜板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109029A (en) * | 1977-01-24 | 1978-08-22 | Hughes Aircraft Company | High resolution electron beam microfabrication process for fabricating small geometry semiconductor devices |
US4132898A (en) * | 1977-11-01 | 1979-01-02 | Fujitsu Limited | Overlapping boundary electron exposure system method and apparatus |
US4520269A (en) * | 1982-11-03 | 1985-05-28 | International Business Machines Corporation | Electron beam lithography proximity correction method |
US4717644A (en) * | 1982-12-20 | 1988-01-05 | International Business Machines Corporation | Hybrid electron beam and optical lithography method |
-
1989
- 1989-12-18 DE DE68923880T patent/DE68923880T2/de not_active Expired - Fee Related
- 1989-12-18 EP EP89123346A patent/EP0433467B1/de not_active Expired - Lifetime
-
1990
- 1990-11-16 JP JP31124490A patent/JPH0766182B2/ja not_active Expired - Fee Related
- 1990-12-05 CN CN90109697A patent/CN1041665C/zh not_active Expired - Fee Related
- 1990-12-05 KR KR1019900019887A patent/KR940002739B1/ko not_active IP Right Cessation
- 1990-12-11 US US07/626,087 patent/US5166888A/en not_active Expired - Fee Related
- 1990-12-17 CA CA002032413A patent/CA2032413C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2032413C (en) | 1996-03-05 |
DE68923880D1 (de) | 1995-09-21 |
CN1054839A (zh) | 1991-09-25 |
KR940002739B1 (ko) | 1994-03-31 |
KR910013479A (ko) | 1991-08-08 |
EP0433467A1 (de) | 1991-06-26 |
JPH03196040A (ja) | 1991-08-27 |
CA2032413A1 (en) | 1991-06-19 |
CN1041665C (zh) | 1999-01-13 |
JPH0766182B2 (ja) | 1995-07-19 |
EP0433467B1 (de) | 1995-08-16 |
US5166888A (en) | 1992-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |