EP0074919B1 - Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer - Google Patents

Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer Download PDF

Info

Publication number
EP0074919B1
EP0074919B1 EP82730109A EP82730109A EP0074919B1 EP 0074919 B1 EP0074919 B1 EP 0074919B1 EP 82730109 A EP82730109 A EP 82730109A EP 82730109 A EP82730109 A EP 82730109A EP 0074919 B1 EP0074919 B1 EP 0074919B1
Authority
EP
European Patent Office
Prior art keywords
transistor
voltage
circuit
diode
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82730109A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0074919A1 (de
Inventor
Udo-Fritz Dipl.-Ing. Buchholz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to AT82730109T priority Critical patent/ATE13730T1/de
Publication of EP0074919A1 publication Critical patent/EP0074919A1/de
Application granted granted Critical
Publication of EP0074919B1 publication Critical patent/EP0074919B1/de
Expired legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature

Definitions

  • the invention relates to a circuit arrangement with a transmitter, in particular with a semiconductor pressure transducer, and with a transistor circuit via which the transmitter is connected to a supply voltage source, which contains circuit elements for compensating temperature influences on the measuring voltage of the transmitter and which has a connection point for has additional compensation circuit elements, the transistor circuit including a transistor, the base of which is connected via a resistor to the collector and with a further resistor to the emitter.
  • a known circuit arrangement of this type (“Electronics Application •, 12 (1980) 12, pages 35, 36) has a connection point for compensation circuit elements, which is formed by the connection point between transistor circuit and transmitter.
  • the transmitter is a semiconductor pressure transducer with four piezoresistive elements arranged in a bridge circuit, at the output diagonal of which the measuring voltage is taken as the output signal of the pressure transducer.
  • the measuring voltage of this known arrangement is led to the inputs of a differential amplifier, with one of these inputs also the additional. Compensation circuit elements are connected.
  • the additional compensation circuit elements are formed here by resistors with which a linear compensation of temperature influences on the measuring voltage of the transmitter, especially for zero point compensation with no pressure effect on the pressure sensor, can be carried out.
  • the invention has for its object to provide a circuit arrangement with a transmitter in which influences of temperature changes on the measuring voltage are largely avoided.
  • connection point is connected directly to the base of the transistor of the transistor circuit in a circuit arrangement of the type specified above, and to the connection point a diode is connected with its one connection, the other connection via a variable voltage divider to the supply voltage source in Connection is established.
  • the circuit arrangement according to the application is advantageous in that a voltage across the diode, taking into account the voltage at the base of the transistor which changes due to the temperature influence on the transistor circuit, can be set in such a way that the diode is blocked below a predetermined temperature and conductive above this temperature is; This ensures extensive compensation even for a non-linear, temperature-dependent change in the measuring voltage due to the non-linear kink characteristic of the diode.
  • the right summand on the right side of the equation represents a quadratic component in the course of U B , which would thus lead to a measurement error with only linear compensation of the temperature influence on the measuring voltage.
  • the gain behavior of the transistor can be influenced by a bias voltage of the diode set accordingly by means of the voltage divider in such a way that, in the event that the diode is blocked, a different course of the voltage U B than for the case that the diode is conductive.
  • the base voltage of the transistor which, together with the bias voltage, forms the voltage across the diode, is a function of the temperature T that also acts on the transistor, so that the transition from the conductive to the blocked state of the diode (break point) occurs at one Change 'of this temperature T results at a certain value.
  • the voltage U B at the transmitter then behaves approximately like the curve described with equation (1).
  • the bias of the diode can be adjusted in a particularly simple manner if the voltage divider contains an adjustable resistor which is connected to the two poles of the supply voltage source and, with its tap, via a diode series resistor to the other connection of the diode.
  • an adjustable resistor which is connected to the two poles of the supply voltage source and, with its tap, via a diode series resistor to the other connection of the diode.
  • the exemplary embodiment of the circuit arrangement according to the invention shown in FIG. 1 has a transmitter 1, which is formed from a bridge circuit composed of piezoresistive elements and outputs the measuring voltage UM at its bridge branch.
  • the transmitter 1 is connected via a transistor circuit 2 to a pole 3 of a supply voltage source, not shown; the other pole 4 of the supply voltage source is led to the other connection of the transmitter 1.
  • the transistor circuit 2 contains a transistor TR, the collector of which is connected to the pole 3 of the supply voltage source and the emitter of which is connected to the transmitter 1.
  • the base of the transistor TR is connected to the collector via a resistor R1 and to the emitter via a resistor R2.
  • the transistor circuit 2 has a connection point 5 which is connected to the base of the transistor TR and to which a diode D is connected with its one connection 6.
  • the diode D is led with its other terminal 7 via a resistor R3 to the tap 8 of an adjustable resistor P;
  • the adjustable resistance P lies between the poles 3 and 4 of the supply voltage source.
  • the transmitter 1 and the transistor circuit 2 are exposed to a temperature influence starting from a temperature T, which would lead to a change in the measuring voltage despite constant pressure acting on the transmitter. Since this temperature T acts in the same way on the transistor TR of the transistor circuit 2, the base voltage U BE at the transistor TR is also set to a value which is characteristic of this temperature T. In the event that the voltage applied to the diode D has such a value due to a corresponding setting of the adjustable resistor P that the diode D is blocked, for. B. at temperatures below 20 °, there is an input voltage U B of the transmitter 1, which can be described by the following equation:
  • a differential change (TK -) in the voltage U B over the temperature T can be represented as follows:
  • the voltage U SE depending on the temperature influence of the temperature T, has a value such that the diode D changes into the conductive region - here, for example, at temperatures greater than 20 ° - the gain behavior of the transistor TR changes in this way that the voltage U B can now be represented in the following way:
  • U s p represents the voltage at the tap of the adjustable resistor P, with which the bias of the diode D is adjusted.
  • the differential change (TK +) of the voltage U B over the temperature T can then be as express as follows:
  • the voltage curves shown in FIG. 2 represent the behavior of the voltage U B when the temperature influence (temperature T) changes on the circuit arrangement according to the invention. If the voltage U e , as shown in curve 10, is an ideal compensation of the temperature influence the measuring voltage is reached analogously to the previously described equation (1). Curve 11 results from a - not dealt with here - compensation of the measuring voltage, which is only compensates for the linear part of the temperature influence.
  • the curve 12 shows the behavior of the voltage U B , as is the case with the circuit arrangement according to the invention.
  • a break point 13 corresponds to the voltage value at which the diode changes from the blocking to the conducting state - here an assumed steep transition.
  • the curve 12 of the voltage U B thus shows that the circuit arrangement according to the invention can also largely compensate for the nonlinear component of the temperature influence on the measurement voltage UM.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Measuring Fluid Pressure (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
EP82730109A 1981-09-08 1982-08-12 Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer Expired EP0074919B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82730109T ATE13730T1 (de) 1981-09-08 1982-08-12 Schaltungsanordnung mit einem messumformer, insbesondere mit einem halbleiter-druckaufnehmer.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3135974 1981-09-08
DE19813135974 DE3135974A1 (de) 1981-09-08 1981-09-08 Schaltungsanordnung mit einem messumformer, insbesondere mit einem halbleiter-druckaufnehmer

Publications (2)

Publication Number Publication Date
EP0074919A1 EP0074919A1 (de) 1983-03-23
EP0074919B1 true EP0074919B1 (de) 1985-06-05

Family

ID=6141357

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82730109A Expired EP0074919B1 (de) 1981-09-08 1982-08-12 Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer

Country Status (4)

Country Link
EP (1) EP0074919B1 (enrdf_load_stackoverflow)
JP (1) JPS5855815A (enrdf_load_stackoverflow)
AT (1) ATE13730T1 (enrdf_load_stackoverflow)
DE (2) DE3135974A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3825247A1 (de) * 1987-07-27 1989-02-09 Nippon Steel Corp Verfahren und herstellung eines metallischen katalysatortraegers und einer katalytischen komponente

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6806969A (enrdf_load_stackoverflow) * 1968-05-17 1969-05-27
DE2148843C3 (de) * 1971-09-27 1979-09-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Kompensationseinrichtung mit einstellbarem Temperaturkoeffizienten
US3919616A (en) * 1972-12-06 1975-11-11 Gen Systems Constant voltage power supply

Also Published As

Publication number Publication date
DE3264047D1 (en) 1985-07-11
JPH0156361B2 (enrdf_load_stackoverflow) 1989-11-29
EP0074919A1 (de) 1983-03-23
JPS5855815A (ja) 1983-04-02
DE3135974A1 (de) 1983-03-17
ATE13730T1 (de) 1985-06-15

Similar Documents

Publication Publication Date Title
DE3503489A1 (de) Schaltungsanordnung zur kompensation der temperaturabhaengigkeit von empfindlichkeit und nullpunkt eines piezoresistiven drucksensors
DE2917237C2 (enrdf_load_stackoverflow)
DE19544863C2 (de) Sensorvorrichtung
EP0106204A1 (de) Schaltung mit Hall-Feldsonde
DE2940315C2 (de) Einrichtung zum Ermitteln des Drehwinkels eines Drehkörpers
DE2305291C3 (de) Regelschaltung zur Regelung der Amplitude eines Signals
EP0101956B1 (de) Widerstandsthermometer
DE1812292B2 (de) Schaltungsanordnung zur verstaerkungsregelung
DE1110286B (de) Elektronische, als Zweipol ausgebildete Anordnung zur Konstanthaltung eines Gleichstromes
DE2518890A1 (de) Linearisierungsvorrichtung
DE69218725T2 (de) Spannungsregler
DE2518422A1 (de) Schaltungsanordnung zur selbsttaetigen kompensation des ohmschen widerstandes der verbindungsleitungen zwischen widerstandsgebern und messgeraeten
EP0074919B1 (de) Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer
DE2727212C3 (de) Signalstärkemesser-Treiberschaltung in einem Empfänger
DE19961500B4 (de) Konstantspannungsschaltung
DE69209358T2 (de) Schaltung für äquivalente Induktivität
WO2003052433A2 (de) Schaltungsanordnung zur strommessung oder stromdetektion
DE2440947A1 (de) Referenzelement fuer eine regelschaltung
DE3827606A1 (de) Temperaturkompensationsschaltung fuer einen hall-generator
EP0217147B1 (de) Schaltungsanordnung zur Ansteuerung eines Drehmagnetmessgeräts
DE2950369C2 (de) Schaltungsanordnung zur Verschiebung des Ausgangsstrombereich es eines Operationsverstärkers
DE1901212B2 (de) Schaltungsanordnung zur kompensation des temperaturganges der basis-emitter-spannung eines transistors
DE10215403B4 (de) Schaltung zur Regelung und zur Erfassung eines Laststromes
DE4041621A1 (de) Auswerteschaltung fuer einen piezoresistiven drucksensor
DE2909194A1 (de) Schaltungsanordnung zum kompensation der temperaturabhaengigen nullpunktsdrift von feldplatten

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT BE CH DE FR GB IT LI

17P Request for examination filed

Effective date: 19830429

ITF It: translation for a ep patent filed
GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Designated state(s): AT BE CH DE FR GB IT LI

REF Corresponds to:

Ref document number: 13730

Country of ref document: AT

Date of ref document: 19850615

Kind code of ref document: T

REF Corresponds to:

Ref document number: 3264047

Country of ref document: DE

Date of ref document: 19850711

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 19860805

Year of fee payment: 5

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Effective date: 19870812

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Effective date: 19870831

Ref country code: CH

Effective date: 19870831

BERE Be: lapsed

Owner name: SIEMENS A.G. BERLIN UND MUNCHEN

Effective date: 19870831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19880429

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19880503

GBPC Gb: european patent ceased through non-payment of renewal fee
REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19881121

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Effective date: 19890831