EP0065122B1 - Vorrichtungsteil aus Siliziumnitrid zum Ziehen von einkristallinem Silizium und Verfahren zu seiner Herstellung - Google Patents

Vorrichtungsteil aus Siliziumnitrid zum Ziehen von einkristallinem Silizium und Verfahren zu seiner Herstellung Download PDF

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EP0065122B1
EP0065122B1 EP82103457A EP82103457A EP0065122B1 EP 0065122 B1 EP0065122 B1 EP 0065122B1 EP 82103457 A EP82103457 A EP 82103457A EP 82103457 A EP82103457 A EP 82103457A EP 0065122 B1 EP0065122 B1 EP 0065122B1
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European Patent Office
Prior art keywords
silicon
silicon nitride
base member
ppm
nitride layer
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EP82103457A
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English (en)
French (fr)
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EP0065122A1 (de
Inventor
Shuitsu Matsuo
Yasuhiro Imanishi
Hideo Nagashima
Masaharu Watanabe
Toshiro Usami
Hisashi Muraoka
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Coorstek KK
Toshiba Corp
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Toshiba Corp
Toshiba Ceramics Co Ltd
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Priority claimed from JP56070477A external-priority patent/JPS57188493A/ja
Priority claimed from JP56070479A external-priority patent/JPS57188409A/ja
Priority claimed from JP7047481A external-priority patent/JPS57188495A/ja
Priority claimed from JP56070478A external-priority patent/JPS57188408A/ja
Priority claimed from JP7047681A external-priority patent/JPS5950626B2/ja
Priority claimed from JP56070475A external-priority patent/JPS5932427B2/ja
Application filed by Toshiba Corp, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Publication of EP0065122A1 publication Critical patent/EP0065122A1/de
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Definitions

  • This invention relates to silicon single crystal pulling devices such as crucibles or dies made of silicon nitride and method of manufacturing the same.
  • CZ Czochralski
  • silicon is melted in a container (for instance a crucible), and a cylindrical single crystal of silicon is pulled up by rotating a seed crystal.
  • the silicon melting container used in this CZ method is usually made of quartz glass.
  • silicon and quartz glass are reacted with each other even at a temperature about equal to the melting temperature of silicon, and oxygen is trapped in the melted silicon. Therefore, about 2x10 18 atoms/cm 3 of oxygen is included in the single crystal silicon.
  • the oxygen included in silicon precipitates to cause various crystal defects to deteriorate the crystal properties of the silicon single crystal.
  • this single crystal silicon is processed to produce a semiconductor device, the electric properties thereof are extremely deteriorated.
  • Prior art document Journal of Crystal Growth, volume 50, No. 1, September 1980, pages 347-365 discloses a method for producing a CVD silicon nitride layer containing 80% a-phase and 20% P-phase.
  • a heat treatment of the CVD layer at 1200-1500°C causes formation of a-phase which then converts gradually to p-phase.
  • the exposure of the CVD surface to molten silicon is sufficient to accelerate this conversion.
  • the (3-phase content can be increased by controlling the deposition temperature.
  • the CVD silicon nitride layer is extremely smooth so that maximum surface roughness is below 30 pm.
  • CVD silicon nitride layers containing at least 80% a-phase are equally known from document Duffy et al., Report No. DOE/JPU954901-79/6 published by U.S. Department of Energy, December 1979.
  • silicon nitride for melting silicon because of the fact that silicon nitride difficultly reacts with silicon.
  • silicon nitride there are porous silicon nitride obtainable by a reactive sintering process and high density silicon nitride obtainable by a hot press process.
  • polyvinyl alcohol or the like is used as a binder
  • MgO, AIN, Y 2 0 3 or the like is used as a sintering promoter. This binder or promoter is inevitably introduced as impurity into the sintered silicon nitride.
  • the inventors have conducted further researches and investigations on the basis of the above knowledge and have found that since silicon nitride produced by the CVD method has high purity, it is possible to obtain single crystal silicon, which has a high purity, a very low oxygen concentration less than 2 ⁇ 10 16 atoms/cm 3 and satisfactory crystal properties, by appropriately selecting various conditions for the pull-up of silicon single crystal in the CVD (chemical vapor deposition) process.
  • the invention accordingly, has an object of providing a silicon single crystal pull-up device such as crucible or die, which is suited for the pull-out single crystals of silicon which has a high purity, with the oxygen concentration being less than 2x10 16 atoms/cm 3 and satisfactory crystal properties.
  • Another object of the invention is to provide a method of manufacturing silicon single crystal pull-up devices as mentioned above.
  • the present invention provides a device suitable for use in an apparatus for producing silicon single crystal from molten silicon, at least a portion of said device being in contact with said molten silicon, wherein at least a part of the portion of the device in contact with the molten silicon is comprised of a layer of silicon nitride precipitated on a refractory base member from gaseous phase, comprising at least 80% of a-phase whose crystal grains have grain diameter of 5 pm or above at a ratio of at least 10%, and having a smooth surface with the surface roughness of not more than 400 pm in Hmax, said device being characterized in that said base member includes as impurities less than 250 ppm of iron, less than 50 ppm of copper, and has a porosity in the range of 10 to 40%, and said silicon nitride layer contains as impurities not more than 3 ppm of boron, not more than 5 ppm of aluminum, and not more than 10 ppm of iron.
  • the invention provides a method of manufacturing a device comprising a silicon nitride layer to be contacted with molten silicon when producing silicon single crystal or ribbon-like tin plate silicon crystal from the molten silicon, said silicon nitride layer comprising at least 80% of a-phase whose crystal grains have grain diameters of 5 ⁇ m or above at a ratio of at least 10%, wherein a crystalline silicon nitride layer is deposited at a temperature ranging from 1050 to 1450°C on at least the inner or outer surface of a refractory base member of a predetermined shape containing as impurities less than 250 ppm of iron, less than 50 ppm of copper, and having a porosity in the range of 10 to 40%, the crystalline silicon nitride layer deposited containing as impurities not more than 3 ppm of boron, not more than 5 ppm of aluminum, and not more than 10 ppm of iron by the CVD process, and then the deposited surface of the crystal
  • the present invention is directed to the use of a device for producing silicon single crystal from molten silicon, at least a portion of said device being in contact with said molten silicon, wherein at least a part of the portion of the device in contact with the molten silicon is comprised of a layer of silicon nitride precipitated on a refractory base member from gaseous phase, comprising at least 80% of a-phase whose crystal grains have grain diameters of 5 ⁇ m or above at a ratio of at least 10%, and having a smooth surface with the surface roughness of not more than 400 pm in Hmax, the invention being characterized in that said base member includes as impurities less than 250 ppm of iron, less than 50 ppm of copper, and has a porosity in the range of 10 to 40%, and said silicon nitride layer contains as impurities not more than 3 ppm of boron, not more than 5 ppm of aluminum, and not more than 10 ppm of iron.
  • the content of the P phase is set to be 20% or above because of the fact if the 13 phase is reduced to be less than 20%, other crystal phases such as a phase are increased so that the properties of the P phase, the reactivity of which with respect to melted silicon is extremely low compared to the a phase, are lost. In this case, ready production of reaction by-products is prone, making it difficult to obtain the pulling of desirable silicon single crystal.
  • highly pure silicon single crystal can also be obtained with silicon nitride of not only ⁇ phase but also of a phase provided the crystal grain size is comparatively large.
  • silicon single crystal of high quality as mentioned above can be obtained by using a pulling device for producing silicon single crystal from melted silicon by the pulling process using a seed crystal, in which part of silicon nitride to be contacted with the melted silicon contains at least 80% or above of a phase precipitated from gaseous phase and at least 10% of the crystal grains having lengths of no less than 5 p.
  • the content of the a phase (crystal phase) is set to be 80% or above, because of the fact that if the a phase is below 80%, the quantity of non-crystalline silicon nitride is increased to increase the reactivity with the melted silicon, thus making difficult the pull-up of silicon single crystal having the intended crystal properties.
  • the diametrical dimension and volumetric content of such a dimension the single crystal grains in the silicon nitride are respectively set to 5 p or above and 10% or above, because of the fact that if otherwise the number of crystal grains per unit area is increased to increase the reactivity with the melted silicon at the grain interface. For instance, even with the a phase system the edges of crystal grains are eroded and rounded although to a lesser extent than with the non-crystalline system. For this reason, it is difficult to obtain silicon single crystal having the intended crystal properties and purity by the pulling process.
  • the silicon nitride as the material of the container according to the invention is manufactured by the CVD method, which permits ready refinement by raw material gas and also with which super-high purity can be achieved.
  • the nature of the product material can be changed by finely controlling the conditions for manufacture, and the characteristics of the product silicon nitride can be varied by varying the deposition temperature and the composition of the raw material gas. More particularly, when the deposition temperature is within a range between 800 and 1,000°C, the product is non-crystalline silicon nitride, permitting no diffraction peak to be obtained by X-ray diffraction.
  • the deposition temperature when the deposition temperature is in a range between 1,050 and 1,450°C, dense crystalline silicon nitride can be obtained. If the deposition temperature exceeds 1,450°C, many crystal grains deposited on a base member from gaseous phase grow in the form of vertical needles on the surface of the base member, and those which grow along the surface of the base member and tied to one another are reduced in number. It has been found that a loose structure, i.e., porous silicon nitride, results. For the above reasons, the deposition temperature as one of the conditions of the CVD process of depositing silicon nitride is set to be between 1,050 and 1,450°C, whereby silicon nitride of satisfactory properties as described above can be obtained.
  • what results from depositing of a predetermined thickness of silicon nitride on at least either one of the inner and outer side of a base member having a predetermined shape by the CVD process may be directly used as the high density silicon nitride container, die or the like for pulling up silicon single crystal.
  • a predetermined thickness of silicon nitride on at least either one of the inner and outer side of a base member having a predetermined shape by the CVD process may be directly used as the high density silicon nitride container, die or the like for pulling up silicon single crystal.
  • Si 3 N 4 the sole deposited silicon nitride
  • the material of the base member are carbon, silicon, silicon carbide and silicon nitride.
  • the porosity is 10 to 40%, preferably 20 to 30%
  • the Fe content is 250 ppm or below, preferably less than 150 ppm
  • the Cu content is less than 50 ppm or below, preferably less than 10 ppm. If the Fe and Cu contents are above the aforementioned limits, the purity of silicon single crystal is reduced at the time of the pulling thereof due to these impurities. Also, polycrystallization is prone.
  • the reason for setting the porosity of the sintered base member to be between 10 and 40% is that if it is below 10% the silicon nitride film deposited from gaseous phase is less close contact with the sintered body so that the peel-off of the silicon nitride film is prone, while if it is above 40% a rough silicon nitride film results from precipitation from gaseous phase so that pinholes are liable to be generated.
  • the specific gravity of carbon based on the n-butylalcohol process is 1.30 to 1.60 g/cc and that the air permeability thereof is 10- 6 cm 2 /sec. or below.
  • the range of the specific gravity of the carbon base member by the n-butylalcohol process is set as above without definite ground, but if this range is departed, inferior spalling-resistivity of the deposited film results.
  • the air permeability of the carbon base member is set to the aforementioned range because of the fact that if it exceeds 10- 6 cm 2 /sec., the uniformity of the base member is deteriorated, and the number of open pores on the surface is increased. Consequently, projections of the deposited silicon nitride that fill the open pores at the interface with the base member are increased and remain as the source of thermal strain, giving rise to thermal cracks in the thermal cycle.
  • the carbon base member may be removed to obtain a structure consisting of the sole silicon nitride; or the structure including the carbon base member without being removed may be directly used, as mentioned earlier.
  • the silicon crystal base member either a polycrystalline silicon base member or a single crystalline silicon base member may be used.
  • the polycrystalline silicon base member may be produced by molding silicon powder into a desired shape by a suitable molding method such as injection, rubber press or ordinary press and sintering the molding in an inert gas atmosphere at a temperature of 1,100 to 1,350°C.
  • the silicon powder used may be what is obtained pulverizing semiconductor grade polycrystalline silicon or rejected semiconductor silicon single crystals or what is obtained by pulverizing byproducts in the silicon industry or in the manufacture of semiconductor grade polycrystalline silicon.
  • a halogen compound of silicon or silane is used as a source of silicon and NH 3 , N 2 or the like is used as a source of nitrogen.
  • the gas for suitably diluting these gases for transporting them i.e., carrier gas, H 2 or N 2 gas or a mixture gas thereof may be used.
  • the thickness of the silicon nitride film according to the invention is desirably 5 p or above. The reason for this is that if the thickness is below 5 p, generation of local pinholes is liable, and such pinholes will cause intrusion of melted silicon into the silicon nitride body at the time of the pulling of the silicon single crystal, thus reducing the purity of the silicon.
  • the boron content is 3 ppm or below
  • the aluminum content is 5 ppm or below
  • the iron content is 10 ppm or below.
  • the heat-resisting base member on which the silicon nitride film is deposited need not be removed if there is no problem. However, if it is necessary to remove the base member, it may be selectively removed by making use of the difference in the physical or chemical properties between it and the deposited silicon nitride film.
  • the carbon base member it is possible to obtain ready removal of carbon through oxidation.
  • the silicon crystal base member it may be removed by various means such as by heating with HCI or C1 2 gas or melting it with the temperature thereof increased to above 1,417°C, the melting point of silicon, by increasing the temperature of high frequency heating in the CVD device after the deposition of the silicon nitride layer is ended.
  • the silicon crystal base member may be removed without need of cooling down the deposited polycrystalline silicon nitride to the normal temperature but substantially at the same temperature as at the time of the deposition.
  • the thickness of the silicon thin film is desirably set to 10 to 300 p. The reason for this is that if the thickness of the silicon thin film is less than 10 p, generation of pinholes is prone, causing the silicon nitride layer deposited on the silicon layer to be in contact with the base member thereunder through the pinholes.
  • the silicon thin film may have a thickness in excess of 300 p, in this case a long time is required for its removal, which is undesired from the standpoint of the productivity.
  • the base member may be repeatedly used, if the base member is hardly etched when removing the silicon thin film to separate the silicon nitride layer.
  • the reason for holding the temperature in the series of steps of depositing the silicon thin film, depositing the silicon nitride layer and removing the silicon thin film in the range between 700 and 1,600°C is that if the temperature is below 700°C, not only the tendency of generation of thermal stress due to the coefficient of thermal expansion between the base member and silicon nitride film is increased but also the removal of the silicon thin film with the etching gas becomes difficult. On the other hand, if the temperature exceeds 1,600°C, the nature of the silicon nitride layer is adversely affected. A more preferred temperature range is 1,200 to 1,450°C.
  • the surface roughness of the silicon nitride film is related to the degree of crystallization of silicon being pulled. More particularly, if the surface roughness of the silicon nitride film is increased, the area of silicon nitride in contact with the melted silicon is increased to increase the reactivity of silicon nitride and melted silicon with respect to each other, thus increasing the nitrogen concentration in the melted silicon.
  • the surface roughness of the contact surface of the silicon nitride film in contact with the melted silicon is 400 p or below, preferably 25 u or below in Hmax, in any portion.
  • Surface roughness, herein referred to as Hmax is determined by measuring the surface roughness of a crucible according to the rules of JIS B 0601.
  • an Hmax of 400 ⁇ m means in this specification that 90% or more of the measured portion have exhibited surface roughness of less than Hmax 400 pm as prescribed in the JIS B 0601. This in turn may indicate that 90% or more of the total inner surface area of the crucible is less than Hmax 400 pm as prescribed in the JIS B 0601.
  • the surface roughness of the silicon nitride film is adjusted to be in the aforementioned range by means of mechanical processing or etching or by suitably selecting the conditions of deposition of the silicon nitride film such as deposition speed, deposition temperature, deposition process, etc.
  • the mechanical processing may be polishing with diamond.
  • the etching process may be physical etching using sand blast or chemical etching using HCI gas, C1 2 gas, HF-HN0 3 , and etc.
  • the depositing conditions it is possible for reducing the surface roughness to cause deposition from gas containing silicon and gas containing nitrogen at a temperature of 1,050 to 1,450°C or to set a low deposition speed as small as possible, for example preferably 1 to 40 um/hour.
  • the orientation of the opening of the base member may be suitably selected when carrying out the deposition of silicon nitride to prevent adhesion of silicon nitride particle formed in the gases through the opening so as to smooth the surface roughness of the silicon nitride film.
  • directing the opening in the horizontal direction or downwards or in a direction making a suitable angle, for instance 50°, from the upward direction so that no particles substantially fall into the inside has an effect of preventing the increase of the surface roughness.
  • the surface roughness of the silicon nitride surface may be controlled by making smooth the outer or inner surface of the heat-resisting base member, depositing the silicon nitride film on the smooth outer or inner surface and then separating the heat-resisting base member and deposited silicon nitride film such that the surface of the deposited silicon nitride film having been in contact with the heat-resisting base member is submitted to in contact with the melted silicon.
  • the contact surface of the silicon nitride film as a smooth surface conforming to the smoothness of the outer surface of the base member.
  • the surface of the deposited silicon nitride film in contact with the heat-resistant base member is constituted by crystal grains of a very small grain diameter compared to the crystal grains of the outer side.
  • High purity silicon powder was molded with polyvinyl alcohol used as binder. The molding was then subjected to a nitrifying process in a nitrogen atmosphere at 1,400°C for 5 hours to produce a porous crucible-shaped silicon nitride sintered body (base member).
  • This base member contained 200 ppm of Fe and 40 ppm of Cu as impurities.
  • the base member was put into a deposition furnace, and a crystalline silicon nitride film with a thickness of 80 to 130 ⁇ and mainly consisting of the (3 phase was deposited on the base member by the CVD process with 270 cc/min of SiCI 4 gas, 0.1 cc/min of TiC1 4 gas, 2,000 cc/min of H 2 gas and 80 cc/min of NH 3 gas supplied to the furnace and under pressure and temperature conditions of 200 Torr and 1,400°C, thus obtaining a silicon single crystal pulling crucible.
  • Crystalline silicon nitride films with thicknesses of 80 to 130 p and mainly consisting of the a phase having a crystal grain of less than 20 ⁇ m are deposited on the base member of the above Example 1 in a deposition furnace under the same conditions as in the Example 1 except for that the TiCI 4 gas is not used, thus obtaining silicon single crystal pulling crucibles.
  • the crucibles obtained in the Example 1 and Reference Example 1 and also a crucible consisting of reactive sintered silicon nitride (Comparison Example 1), a crucible consisting of hot press silicon nitride (Comparison Example 2) and a quartz glass crucible (Comparison Example 3) were used to melt and grow silicon by pulling a seed crystal from the surface of the melted silicon while rotating the seed crystal.
  • the oxygen content and crystal state of the resultant cylindrical silicon products are as in Table 1 below.
  • the character of silicon nitride film is listed in the columns for the Example 1 and Reference Example 1 and the character of silicon nitride is listed in the columns of the Comparison Examples 1 and 2.
  • silicon single crystal could be obtained irrespective of the proportions of the a and P phases in the silicon nitride film.
  • silicon single crystal could be obtained more readily with less reaction product produced in case of the crucible having the silicon nitride film containing much ⁇ phase (Example 1) compared to the case with the crucible having the silicon nitride film containing much a phase (Reference Example 1). This is thought to be due to the fact that the (3 phase silicon nitride is superior in stability at high temperatures and has extremely lower reactivity with respect to the melted silicon.
  • the oxygen content is below 2x10 16 atoms/cm 3 , which is far lower than the oxygen of 1 ⁇ 10 18 atoms/cm 3 of the silicon single crystal obtained with the quartz glass crucible (Comparison Example 3).
  • High purity silicon powder was molded with polyvinyl alcohol used as binder. Then, the molding was subjected to a nitrifying treatment in a nitrogen atmosphere at 1,400°C for 5 hours to obtain a porous crucible silicon nitride sintered body (base member). Then, such base members were used to produce four different silicon single crystal pulling crucibles by deposition of silicon nitride films with thicknesses ranging from 100 to 200 ⁇ m on these base members in a deposition furnace by the CVD process with 260 cc/min of SiCI 4 gas, 2,000 cc/min of H 2 gas and 80 cc/min of NH 3 gas supplied under a pressure of 20 Torr and at temperatures listed in the Table 2 below.
  • the oxygen content in the silicon single crystals obtained by using the crucibles No. 7 and No. 9 was less than 2x10 16 atoms/cm 3 .
  • silicon nitride films with a thickness of 280 p were deposited on the base members by setting the base members in a deposition furnace and supplying 260 cc/min of SiC1 4 , 80 cc/min of NH 3 gas and 2,000 cc/min of H 2 gas under a pressure of 20 Torr and at a temperature of 1,380°C.
  • a commercially available electrode carbon material was prepared as the carbon base member for deposition. It has properties as shown in Table 4. Its bulk density was 1.7 g/cc, and its coefficient of thermal expansion was 3.0 ⁇ 10 -6 /°C. Silicon nitride films are deposited on this base member under the same condition as in the above Example 4, and the same sudden heating sudden cooling tests were conducted on the resultant test pieces. The results are also shown in Table 4.
  • the spalling-resistivity is excellent with the composite system and also with the sole silicon nitride.
  • Silicon single crystal or silicon polycrystal was pulverized with a carbonated tungsten mortar to prepare silicon powder with a grain diameter less than 150 meshes. Then, about 3% by weight of 0.5% solution of polyvinyl alcohol was added to the silicon powder. The mixture thus obtained was used to produce a crucible-like molding with a density of 55 to 65%, an outer diameter of 80 mm, an inner diameter of 72 mm and a height of 150 mm by the rubber press process. Then, the molding was sintered in an argon atmosphere at 1,200°C for about 3 hours to obtain a silicon polycrystalline base member. At the time of the sintering, this base member was contracted by about 6.0% so that the density was about 80%, the outer diameter was 75 mm, the inner diameter was 68 mm, and the height was 142 mm.
  • the aforementioned crucible-like silicon polycrystalline base member was set on a support member of a CVD reaction apparatus such that the opening of the base member faced a gas inlet. Then, the base member was exhausted with a rotary pump by rotating the support member at a speed of 5 to 6 rotations per minute. Subsequently, H 2 gas was supplied at a rate of 2 I/min from the inlet while continuing the exhausting. At the same time, a carbon susceptor provided in the device is caused to generate heat by energizing a high frequency coil, for heating the silicon polycrystalline crystal base member with the heat of radiation until the surface thereof reaches 1,360°C.
  • deposition of silicon nitride on the base member was carried out for about 15 hours by supplying 270 cc/min of SiC1 4 , 60 to 90 cc/min of NH 3 and 1,000 cc/min of H 2 gas toward the inner surface of the base member while maintaining the total gas pressure inside the device to be 25 to 30 Torr.
  • a polycrystalline silicon nitride layer with a thickness of about 1.2 mm is deposited on the inner surface of a the crucible-like silicon polycrystalline base member.
  • the supply of the SiC1 4 gas, NH 3 gas and H 2 gas is stopped, and the temperature inside the device is lowered to about 850°C, and the silicon polycrystalline base member was removed by dispersion by supplying HCI gas to obtain a crucible consisting of the sole polycrystalline silicon nitride.
  • the silicon nitride crucible has a high purity and a high density. Also, the generation of local thermal stress was less, and the spalling-resistivity was excellent. This crucible was used to melt silicon and pull up a seed crystal from the surface of the melted silicon while rotating it, whereby a cylindrical silicon single crystal with a very low oxygen content of less than 2x 1016 atoms/cm 3 was obtained.
  • Silicon powder was pulverized in an oscillating mill to obtain fine powder of a 325 mesh (Japanese Industrial Standards) pass or below. The fine powder was then washed several times with diluted hydrochloric acid several times to remove iron, alkali and others, and then the resultant fine powder was sufficiently washed with deionized water. The purified silicon fine powder thus obtained was then added to the deionized water containing NH 4 0H as deflocculating agent, and the resultant system was kneaded to prepare a slip with a pH of 8 to 9.
  • Japanese Industrial Standards Japanese Industrial Standards
  • the slip was then cast into a crucible-like gypsum mold to produce a round bottom crucible-like molding with a wall thickness of 3 to 7 mm, an outer diameter of 60 mm and a depth of 130 mm.
  • the molding thus obtained had a density of 1.65 g/cc (corresponding to a silicon density of 70%) after natural drying. Thereafter, the molding was sintered in an argon atmosphere at 1,200°C for about 2 hours to obtain a crucible-like silicon polycrystalline base member with a density of about 85%.
  • the aforementioned crucible-like silicon polycrystalline base member was set on a support member of a CVD reacting device such that its round bottom portion faces the inlet, then the temperature of the base member surface was elevated to 1,330°C by energizing a high frequency coil, and then deposition of silicon nitride was carried out for about 20 hours by supplying 300 cc/min of SiC1 4 and 85 to 95 cc/min of NH 3 through adjustment of corresponding needle valves and adjusting the flow of H 2 gas such that the total gas pressure is 20 to 30 Torr.
  • a polycrystalline silicon nitride layer with a thickness of 1.8 mm was deposited on the outer surface of the crucible-like silicon polycrystalline base member. Thereafter, the supply of SicI 4 gas, NH 3 gas and H 2 gas was stopped, and the temperature inside the device was reduced down to 800°C. Then, the silicon polycrystalline base member was removed by supplying HCI to obtain a crucible consisting of sole polycrystalline silicon nitride and having a wall thickness of about 1.8 mm, an outer diameter of 60 mm and a height of 130 mm.
  • the silicon nitride crucible thus obtained has a very high purity and a high density. Also, little local thermal stress was generated, and the spalling-resistivity was excellent. This crucible was used to melt silicon and pull up a seed crystal from the surface of the melted silicon while rotating it, whereby a cylindrical single crystal with a very low oxygen content of less than 2x 10 16 atoms/cm 3 could be obtained.
  • a plate-like silicon crystal base member with a width of 50 mm, a length of 85 mm and a thickness of 1 mm is set upright in a CVD reacting device by inserting a 50-mm side of the base member in groove (about 2 mm deep) in a support member. Then, the device is exhausted while rotating the support member at a rate of 5 to 6 rotations per minute, and then H 2 gas is supplied at a rate of 2 I/min from the inlet while continuing exhausting. At the same time, the high frequency coil is energized to cause heat generation of a carbon heat generator in the device to heat the silicon single crystal with the heat of radiation until the temperature of the surface becomes 1,370°C.
  • deposition of silicon nitride was effected for about 8 hours by supplying 230 cc/min of SiCl 4 , 75 cc/min of NH 3 and H 2 gas such that the total gas pressure is 25 to 35 Torr through adjustment of the individual needle valves.
  • a polycrystalline silicon nitride layer with a thickness of 0.8 mm was deposited on the entire surface of the base member except for the portion thereof embedded in the support member.
  • the system was taken out and set in a separate furnace (at a temperature of 900°C), and then HCI gas is supplied to the furnace to remove the exposed portion of the silicon single crystal base member not covered by the silicon nitride layer, thus obtaining a hollow silicon nitride body having an opening with a width of 1 mm and a length of 50 mm. Thereafter, the silicon nitride body was cut along planes parallel to the plane of the opening to obtain frame-like dies with a thickness of 0.8 mm.
  • the crystalline silicon nitride die thus obtained was placed on the same silicon nitride crucible as that used in the previous Example 5, and melted silicon within the crucible was pulled through a hollow section of the die by using a ribbon-like seed crystal. In this case, no clogging due to reaction product to reaction between the die and melted silicon was resulted even for a period of use beyond 12 hours.
  • the same die could be used for six times for pulling up ribbon-like silicon crystals with a thickness of 1.3 mm and a width of 50 mm and having a very low oxygen content of 2 ⁇ 10 16 atoms/cm 3 or below.
  • Semiconductor polysilicon was pulverized, and the silicon powder thus obtained was molded with polyvinyl alcohol used as binder. The molding was then subjected to a nitrifying treatment in a nitrogen atmosphere at 1,400°C for 5 hours and then subjected to a purifying treatment in a C1 2 gas at 1,400°C, thus obtaining a base member.
  • Such base members were used to produce silicon single crystal pull-up crucibles by introducing these base members into a deposition furnace and depositing a silicon nitride film with a thickness of 80 to 130 p on the entire base member surface by the CVD process by supplying 260 cc/min in of SiCl 4 , 2,000 cc/min of H 2 gas and 80 cc/min of NH 3 gas under a pressure of 20 Torr and at a temperature of 1,380°C.
  • each crucible was used to melt silicon and produce silicon single crystal by pulling up a seed crystal from the surface of the melted silicon while rotating it. The results are shown in Table 5.
  • the B content is preferably 3 ppm or below
  • the AI content is preferably 5 ppm or below
  • the Fe content is preferably 10 ppm or below.
  • the comparison crucible shown in the Table is a crucible consisting of sole silicon nitride obtained by the prior art method of depositing a silicon nitride layer with a thickness of 500 ⁇ m on the inner surface of the crucible-like carbon base member under the same conditions as mentioned above, then taking the system out of the reaction furnace and cooling it down to room temperature and then removing the carbon base member through oxidation in an oxidizing atmosphere at a temperature of 500 to 1,000°C.
  • Silicon single crystal pulling crucibles were produced in the manner as described in the Example 9, and their inner surface was machined using diamond powder to different surface states as shown in Table 7. These crucibles were used to conduct silicon pulling tests, and it was found that there is a relation between the surface roughness of the crucible and the degree of crystallization of silicon.
  • the surface roughness of the silicon nitride film based on the CVD process is related to the speed and temperature of deposition of the silicon nitride.
  • Table 8 shows the results of experiments conducted in connection to the relation among the deposition speed, deposition temperature and surface roughness.
  • Table 8 shows the ratio (%) of the number of 10 mmx10 mm inner surface portions of each crucible made of silicon nitride which exhibited a roughness below 400 ⁇ m to the number of 10 mmx 10 mm inner surface portions of the crucible which exhibited a roughness of 400 pm or more, when measured in accordance with .the rules of JIS B 0601.
  • a crucible base member similar to that in the Example 9 was produced, and deposition was carried out by setting the crucible opening orientation to various angles from the direct downward position (0°), and the surface roughnesses obtained with these angles and their effects were measured. The results are shown in Table 9.
  • the crucible type A represents crucibles, in which silicon nitride is deposited on the outer wall surface of the base member such that the deposition surface is in contact with the melted silicon
  • the crucible type B represents crucibles, in which silicon nitride was deposited on the inner wall surface of the base member such that the outer deposition surface is in contact with the melted silicon.
  • the main reason for the polycrystallization occurring during the course of the pulling is thought to be due to a large area of contact with the melted silicon of the base member which exudates into the melted silicon and is reacted to result in the dissolution of the reaction product in silicon being pulled up, thus precipitating as P-Si3N4 on the surface-of melted silicon at low temperature to float and be trapped at solid-liquid interface and also trapped into the silicon being pulled to so as to constitute nuclei of crystal defects.

Claims (16)

1. Zur Verwendung in einer Vorrichtung zur Herstellung eines Siliziumeinkristalls aus erschmolzenem Silizium geeignete Vorrichtung, von der zumindest ein Teil mit dem erschmolzenen Silizium in Berührung steht, wobei zumindest ein Teil des in Berührung mit dem erschmolzenen Silizium in Berührung stehenden Teils der Vorrichtung aus einer Schicht von auf eine feuerfeste Unterlage aus einer Gasphase ausgefälltem Siliziumnitrid mit zumindest 80% a-Phase, deren Kristallkörnchen einen Korndurchmesser von 5 um oder darüber bei einem Verhältnis von mindestens 10% aufweisen, und einer glatten Oberfläche einer Oberflächenrauhheit von nicht mehr als 400 pm, ausgedrückt als Hmax, besteht, dadurch gekennzeichnet, daß die Unterlage als Verunreinigungen weniger als 250 ppm Eisen, weniger als 50 ppm Kupfer enthält und eine Porosität im Bereich von 10-40% aufweist und daß die Siliziumnitridschicht als Verunreinigungen nicht mehr als 3 ppm Bor, nicht mehr als 5 ppm Aluminium und nicht mehr als 10 ppm Eisen enthält.
2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Oberflächenrauhheit 25 um oder weniger, ausgedrückt als Hmax, beträgt.
3. Vorrichtung nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, daß die Unterlage aus einem Material aus der Gruppe Kohlenstoff, Silizium und Siliziumcarbid besteht.
4. Vorrichtung nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, daß die Unterlage aus Siliziumnitrid besteht.
5. Verfahren zur Herstellung einer Vorrichtung mit einer bei der Herstellung eines Siliziumeinkristalls oder eines bandartigen dünnen plättchenförmigen Siliziumkristalls aus erschmolzenem Silizium mit dem erschmolzenen Silizium in Berührung gelangenden Siliziumnitridschicht, die mindestens 80% a-Phase, deren Kristallkörnchen Korndurchmesser von 5 um oder darüber bei einem Verhältnis von mindestens 10% aufweisen, enthält, wobei auf zumindest der Innen- oder Außenfläche einer feuerfesten Unterlage gegebener Form mit weniger als 250 ppm Eisen und weniger als 50 ppm Kupfer als Verunreinigungen und einer Porosität im Bereich von 10-40% nach dem CVD-Verfahren bei einer Temperatur im Bereich von 1050° bis 1450°C eine kristalline Siliziumnitridschicht mit nicht mehr als 3 ppm Bor, nicht mehr als 5 ppm Aluminium und nicht mehr als 10 ppm Eisen als Verunreinigungen abgeschieden und danach die Oberfläche der abgelagerten kristallinen Siliziumnitridschicht so weit geglättet wird, daß ihre Oberflächenrauhheit, ausgedrückt als Hmax, weniger als 400 pm beträgt.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Oberfläche der kristallinen Siliziumnitridschicht auf chemischem Wege so weit geglättet wird, daß ihre Oberflächenrauhheit weniger als 400 pm, ausgedrückt als Hmax, beträgt.
7. Verfahren nach einem der Ansprüche 5 oder 6, dadurch gekennzeichnet, daß die Unterlage nach Abscheidung der kristallinen Siliziumnitridschicht entfernt wird.
8. Verfahren nach einem der Ansprüche 5 bis 7, dadurch gekennzeichnet, daß die Abscheidung der kristallinen Siliziumnitridschicht durch Steuern der Temperatur und Abscheidungsgeschwindigkeit erfolgt.
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß die Abscheidungsgeschwindigkeit 1-40 pm/h beträgt.
10. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß auf der Unterlage vor Abscheidung der Siliziumnitridschicht ein dünner Siliziumfilm abgeschieden wird.
11. Verfahren nach Anspruch 10, dadurch gekennzeichnet, daß der Siliziumfilm nach Abscheidung der Siliziumnitridschicht unter Trennung der abgeschiedenen Siliziumnitridschicht von der Unterlage entfernt wird.
12. Verfahren nach einem der Ansprüche 5 bis 11, dadurch gekennzeichnet, daß die Unterlage aus einem Material aus der Gruppe Kohlenstoff, Silizium, Siliziumcarbid und Siliziumnitrid besteht.
13. Verfahren nach Anspruch 12, dadurch gekennzeichnet, daß die Unterlage aus Kohlenstoff einer spezifischen Dichte von 1,30-1,60 g/cm3, gemessen im Rahmen des n-Butanol-Verfahrens, und einer Luftdurchlässigkeit von weniger als 10-6 cm2/s besteht.
14. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß die Abscheidung der Siliziumnitridschicht auf einer glatten Außenfläche der Unterlage erfolgt und daß die mit der Außenfläche der Unterlage kontaktierte Oberfläche der Siliziumnitridschicht mit dem erschmolzenen Silizium in Berührung gebracht wird.
15. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die mit dem Siliziumnitrid zu beaufschlagende Oberfläche der Unterlage abwärts gerichtet und danach die Abscheidung des Siliziumnitrids durchgeführt wird.
16. Verwendung einer Vorrichtung zur Herstellung eines Siliziumeinkristalls aus erschmolzenem Silizium, von der zumindest ein Teil mit dem erschmolzenen Silizium in Berührung steht, wobei zumindest ein Teil des in Berührung mit dem erschmolzenen Silizium stehenden Teils der Vorrichtung aus einer Schicht von auf eine feuerfeste Unterlage aus einer Gasphase ausgefälltem Siliziumnitrid mit zumindest 80% a-Phase, deren Kristallkörnchen einen Korndurchmesser von 5 µm oder darüber bei einem Verhältnis von mindestens 10% aufweisen, und einer glatten Oberfläche einer Oberflächenrauhheit von nicht mehr als 400 pm, ausgedrückt als Hmax, besteht, dadurch gekennzeichnet, daß die Unterlage als Verunreinigungen weniger als 250 ppm Eisen, weniger als 50 ppm Kupfer enthält und eine Porosität im Bereich von 10-40% aufweist und daß die Siliziumnitridschicht als Verunreinigungen nicht mehr als 3 ppm Bor, nicht mehr als 5 ppm Aluminium und nicht mehr als 10 ppm Eisen enthält.
EP82103457A 1981-05-11 1982-04-23 Vorrichtungsteil aus Siliziumnitrid zum Ziehen von einkristallinem Silizium und Verfahren zu seiner Herstellung Expired - Lifetime EP0065122B1 (de)

Applications Claiming Priority (12)

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JP56070477A JPS57188493A (en) 1981-05-11 1981-05-11 Manufacture of jig for pulling up silicon
JP56070479A JPS57188409A (en) 1981-05-11 1981-05-11 Manufacture of high density silicon nitride
JP7047481A JPS57188495A (en) 1981-05-11 1981-05-11 High density silicon nitride-base container for pulling up silicon single crystal
JP70474/81 1981-05-11
JP70476/81 1981-05-11
JP70477/81 1981-05-11
JP56070478A JPS57188408A (en) 1981-05-11 1981-05-11 Manufacture of high density silicon nitride
JP7047681A JPS5950626B2 (ja) 1981-05-11 1981-05-11 シリコン単結晶引上げ用容器
JP70475/81 1981-05-11
JP70479/81 1981-05-11
JP56070475A JPS5932427B2 (ja) 1981-05-11 1981-05-11 シリコン単結晶引上げ用高密度窒化珪素質容器
JP70478/81 1981-05-11

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