EP0064188B1 - Monolithisch integriertes Treiberschaltungssystem für die Wortleitungen eines Matrixspeichers - Google Patents

Monolithisch integriertes Treiberschaltungssystem für die Wortleitungen eines Matrixspeichers Download PDF

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Publication number
EP0064188B1
EP0064188B1 EP82103173A EP82103173A EP0064188B1 EP 0064188 B1 EP0064188 B1 EP 0064188B1 EP 82103173 A EP82103173 A EP 82103173A EP 82103173 A EP82103173 A EP 82103173A EP 0064188 B1 EP0064188 B1 EP 0064188B1
Authority
EP
European Patent Office
Prior art keywords
common
word line
line
driver circuit
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82103173A
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German (de)
English (en)
French (fr)
Other versions
EP0064188A3 (en
EP0064188A2 (de
Inventor
Russell James Houghton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0064188A2 publication Critical patent/EP0064188A2/de
Publication of EP0064188A3 publication Critical patent/EP0064188A3/de
Application granted granted Critical
Publication of EP0064188B1 publication Critical patent/EP0064188B1/de
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Definitions

  • the invention relates to a monolithically integrated driver circuit system for the word lines of a matrix memory.
  • the cells of a memory array are generally arranged in rows and columns, each row of memory cells being coupled to its own word line and each column of memory cells being connected to a sense line for one bit or to a pair of sense lines.
  • the voltage on or the current in each word line is controlled by separate word driver circuits as shown and described in US Patent 3,863,229.
  • each driver circuit is connected to a terminal of the voltage supply via its own resistor.
  • conventional decoding circuits are used to select only one of a plurality of word lines at a time.
  • the decoder tends to apply a low potential to several driver circuits instead of only the one driver circuit coupled to the desired word line. This mode of operation not only causes delays in the final selection of a word line, but it can actually cause an incorrect selection or the selection of an undesirable word line in the memory arrangement.
  • the invention seeks to remedy this.
  • the invention as characterized in the claims, achieves the object of providing an improved system for selecting the word lines of a memory arrangement which operates faster than known systems and in which the probability of incorrect selection of a word line is reduced compared to known systems.
  • FIG. 1 shows an exemplary embodiment of a word line driver system according to the invention for a memory arrangement.
  • This system is provided with a first driver circuit 10, which contains a first current amplifier 12, in which an NPN transistor T1 and a series resistor R1 are arranged between a first terminal + V of an operating voltage source and an input terminal 1, the emitter of the transistor T1 is connected to the input terminal 1 and its base and its collector are connected to one another.
  • the base of a PNP transistor T2 which has a junction capacitance indicated by the capacitor C1 between its emitter and its base, is connected to the emitter of the transistor T1.
  • the first driver circuit 10 is also provided with a second current amplifier 14, the NPN transistors T3 and T4 of which are connected to one another at their bases.
  • the collector and the base of the transistor T3 are connected to one another and to the collector of the PNP transistor T2 of the first current amplifier 12.
  • the emitter of the NPN transistor T3 is connected to the ground potential via a second resistor R2 and the capacitance of the base-emitter junction of the transistor T4 is indicated by the capacitor C2.
  • the first driver circuit 10 is connected via the emitter of the PNP transistor T2 and a first common resistor R A to the first terminal + V of an operating voltage source and via the emitter of the NPN transistor T4 of the second amplifier 14 and a second common resistor R B the second, grounded terminal of the operating voltage source is connected.
  • the collector of the NPN transistor T4 is connected to a lower word line WLB i , to which a number of memory cells, for example 64, of the memory arrangement are connected, of which only one memory cell 16 is shown in FIG. 1.
  • Memory cell 16 which corresponds to that described in the aforementioned U.S.
  • patent includes a pair of cross-coupled NPN transistors T5 and T6 and a pair of PNP load transistors T7 and T8 connected to cross-coupled transistors T5 and T6.
  • the emitters of the cross-coupled transistors T5 and T6 are connected to one another and to the lower word line WLB 1 .
  • the emitters of the load transistors T7 and T8 are also connected to one another and to the upper word line WLT1 via a resistor R3 in the memory cell.
  • the lower word line WLB1 is connected to the ground potential via a resistor R4 and a capacitance C3, which represents the equivalent capacitance of all memory cells connected to the word line WLB1.
  • the upper word line WLT1 is connected to a voltage source in the usual way via one or more resistors, not shown.
  • First and second Schottky clamping diodes D1 and D2 connect the base and the collector of the cross-coupled transistors T5 and T6, respectively.
  • a pair of bit sense lines BO and B1 are connected to the memory cell 16 via third and fourth switches shown as Schottky diodes D3 and D4.
  • a second word line driver circuit 10A which is similar to the first and is also shown in FIG. 1, is connected via the emitter of the PNP transistor T2 of its first amplifier 12 and the first common resistor R A to the first terminal + V of the operating voltage source and via the Emitter of the NPN transistor T4 of its second amplifier 14 is connected via the second common resistor R B to the second terminal of the operating voltage source which is connected to ground.
  • the second driver circuit 10A is also through the base of its PNP transistor T2 to an input terminal N and through the collector its NPN transistor T4 connected to another lower word line WLB N.
  • a number of memory cells are connected to the lower word line WLB N and an upper word line WLT N , of which only the memory cell 16A is shown.
  • Another pair of bit sense lines BO and B1 are connected to memory cell 16A.
  • the PNP transistor T2 of the second word line driver circuit 10A also has a base-emitter junction capacitance between the emitter and the base, which is represented by the capacitance C1, which corresponds to the corresponding junction capacitance of the first word line driver circuit 10 via a first common line A is connected. Since the first and second word line driver circuits 10 and 10A represent only two of many more such driver circuits, for example 100, it can be seen that the line A is a highly capacitively loaded line, the capacitance of which is represented by the capacitance C A in FIG. 1 is.
  • a second common line B connected to the emitters of the NPN transistors T4 of the word line driver circuits 10 and 10A is a highly capacitively loaded line since each of the base-emitter blocking layers of the NPN transistors T4 arranged in parallel represents a capacity.
  • the capacitance of line B is designated C B in FIG. 1.
  • the current I SEL increases to 1 mA, with almost all of the current flowing through the PNP transistor T2 of the circuit 10, since the emitter of the transistor T2 is at a voltage of + V due to the large charged capacitance C A , while the voltage at the collector of the NPN transistor T1 has a value which corresponds to the voltage of + V reduced by the voltage drop across the common resistor R1.
  • the large capacitance C A must be discharged through the emitter current of the PNP transistor T2.
  • the current I SEL causes a large excess current I C2 in the collector of the PNP transistor T2, as shown in FIG. 2 of the drawing.
  • This high current I c2 turns on the NPN transistors T3 and T4 of the second current amplifier 14, which causes an even higher excess current I C4 flowing through the collector of the NPN transistor T4, which discharges the selected lower word line WLB i .
  • the overshoot of the collector current I C4 is particularly strong since the second current amplifier 14 is supplied with the excess current I c2 and the second current amplifier 14 in connection with the second large capacitance C B was designed in such a way that it generates its excess current in the same way how the excess current of the first current amplifier 12 was generated in connection with the first large capacitance C A. Therefore, with this arrangement, an overshoot effect is produced in the driver circuit 10.
  • This overshoot characteristic of the driver current of the word line at the collector of the NPN transistor T4 additionally ensures faster discharge and selection of the word lines WLB1.
  • the collector current I C2 at the PNP transistor T2 is equal to I SEL ⁇ R1 / RA, which controls the second current amplifier 14 in the same way as the current I SEL controls the first current amplifier 12.
  • the output current at the collector of the NPN transistor T4, the the lower word line WLB 1 is then approximately equal to I SEL ⁇ R1 / R A ⁇ R2 / RB, an amplification occurring between the input and the output, which is based on the resistance conditions.
  • the first common capacitance C A has been shown for better understanding than being connected between the first common line A and a point with ground potential.
  • a point with a reference potential other than the ground potential can be used, such as, for example, the input terminals which are connected to the base of the PNP transistor T2.
  • lines A and B can also be connected to a discrete capacitor.
  • An additional advantage of the common lines A and B is the return to the initial state after incorrect selection processes.
  • the decoders initially tend to lower the potential of several inputs, for example by current division, before the desired word line is selected.
  • Ir One or more driver circuits that have been incorrectly selected return to their initial state by the decrease in voltage on the first common line A, when this line is discharged and the PNP transistors T2 become non-conductive, and by the increase in voltage in the second common line Line B, when being charged, thereby turning off NPN transistor T4 in the unselected driver circuits.
  • FIG. 1 which has a driver circuit in which a PNP transistor T2 is connected to the first common line A
  • the driver circuits also have an NPN -Transistor with a junction capacitance, which is connected to the first common line A.
  • a PNP transistor with a junction capacitance coupled to the second common line B can be used in the driver circuits according to the invention.
  • memory cells other than those shown in FIG. 1 can be used in a memory arrangement which is connected to the word lines such as e.g. B. the word lines WLB i and WLB N is connected.
  • a word line driver system for a memory device which has a significantly improved performance in terms of performance and which protects against incorrect selection processes.
  • This system uses a single resistor R A to connect all driver circuits to the + V terminal of the operating voltage source and uses a single resistor R B to connect all these driver circuits to ground potential in order to achieve the results mentioned.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
EP82103173A 1981-05-05 1982-04-15 Monolithisch integriertes Treiberschaltungssystem für die Wortleitungen eines Matrixspeichers Expired EP0064188B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/260,576 US4413191A (en) 1981-05-05 1981-05-05 Array word line driver system
US260576 1981-05-05

Publications (3)

Publication Number Publication Date
EP0064188A2 EP0064188A2 (de) 1982-11-10
EP0064188A3 EP0064188A3 (en) 1985-10-02
EP0064188B1 true EP0064188B1 (de) 1987-11-19

Family

ID=22989723

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82103173A Expired EP0064188B1 (de) 1981-05-05 1982-04-15 Monolithisch integriertes Treiberschaltungssystem für die Wortleitungen eines Matrixspeichers

Country Status (4)

Country Link
US (1) US4413191A (enrdf_load_stackoverflow)
EP (1) EP0064188B1 (enrdf_load_stackoverflow)
JP (1) JPS57183696A (enrdf_load_stackoverflow)
DE (1) DE3277713D1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572970A (en) * 1982-11-19 1986-02-25 Motorola, Inc. Miller capacitance effect eliminator for use with a push-pull amplifier output stage
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
ID29774A (id) 1998-03-11 2001-10-11 Dow Chemical Co Serat-serat yang dibuat dari interpolimer-interpolimer alfa-olefin/vinil atau vinilidena aromatik dan/atau vinil atau vinilidena alifatik atau sikloalifatik terhalang

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354321A (en) * 1963-08-16 1967-11-21 Sperry Rand Corp Matrix selection circuit with automatic discharge circuit
US3474419A (en) * 1964-06-08 1969-10-21 Ampex Word drive system for a magnetic core memory
US3688280A (en) * 1970-09-22 1972-08-29 Ibm Monolithic memory system with bi-level powering for reduced power consumption
US3740730A (en) * 1971-06-30 1973-06-19 Ibm Latchable decoder driver and memory array
US3863229A (en) * 1973-06-25 1975-01-28 Ibm Scr (or scs) memory array with internal and external load resistors
JPS5341968A (en) * 1976-09-29 1978-04-15 Hitachi Ltd Semiconductor circuit
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit

Also Published As

Publication number Publication date
DE3277713D1 (en) 1987-12-23
US4413191A (en) 1983-11-01
JPS57183696A (en) 1982-11-12
EP0064188A3 (en) 1985-10-02
EP0064188A2 (de) 1982-11-10
JPH024078B2 (enrdf_load_stackoverflow) 1990-01-25

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