EP0062550B1 - Procédé de traitements thermochimiques de métaux par bombardement ionique - Google Patents

Procédé de traitements thermochimiques de métaux par bombardement ionique Download PDF

Info

Publication number
EP0062550B1
EP0062550B1 EP82400407A EP82400407A EP0062550B1 EP 0062550 B1 EP0062550 B1 EP 0062550B1 EP 82400407 A EP82400407 A EP 82400407A EP 82400407 A EP82400407 A EP 82400407A EP 0062550 B1 EP0062550 B1 EP 0062550B1
Authority
EP
European Patent Office
Prior art keywords
plasma
treatment
pieces
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82400407A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0062550A1 (fr
Inventor
Roger Speri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovatique SA
Original Assignee
Innovatique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9256233&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP0062550(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Innovatique SA filed Critical Innovatique SA
Priority to AT82400407T priority Critical patent/ATE37907T1/de
Publication of EP0062550A1 publication Critical patent/EP0062550A1/fr
Application granted granted Critical
Publication of EP0062550B1 publication Critical patent/EP0062550B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Definitions

  • the present invention relates to a process for thermochemical treatment of metals such as nitriding, carbonitriding, carburizing, metallic deposits under vacuum, etc. by ion bombardment.
  • the treatment medium can be obtained by passing a stream of ammonia gas over the parts, which, when decomposed, releases active nitrogen atoms.
  • the treatment temperature which is of the order of 570 ° C. is then obtained by placing the parts in an electric oven.
  • the parts to be treated are placed in an enclosure containing a gas (NH 3 , molecular nitrogen, H 2 CH 4 ) at low pressure (0.1 to 10 torr).
  • a gas NH 3 , molecular nitrogen, H 2 CH 4
  • This enclosure is equipped with an anode and a cathode, connected to a high voltage electric current generator (between 300 and 1500 V).
  • the cathode is designed so as to support the parts to be treated which are therefore brought to the cathode.
  • the treatment is obtained by creating, between the cathode and the anode, a luminescent discharge which is maintained at the limit of the arc regime.
  • a plasma is created around the part to be treated, composed of nitrogen ions which in fact constitutes the treatment medium.
  • Another solution envisaged, for example in FR A 2 379 615 and USA 3 108 900, in order to obtain an operation free from the risk of arcing, consists in using, instead of direct current, high voltage current pulses. , but whose total energy is maintained at a predetermined value, so that it is not possible to reach, in the voltage / current discharge curve, the zone corresponding to the arc regime.
  • the invention proposes to make the 2 treatment parameters, namely the production of the treatment medium, that is to say plasma, and the heating to the treatment temperature of the parts completely independent. .
  • a cold plasma is continuously obtained, that is to say a plasma in which the heat energy dissipated during the dissociation remains at a very low level and cannot affect the temperature characteristics of the treatment in progress, in the case of a thermochemical treatment.
  • This method also makes it possible to eliminate the temperature heterogeneities as a function of the parameters linked to the parts such as the shape, the state, the hollow cathode phenomena during the rise in temperature, the dimensions of different parts, etc.
  • the installation for implementing the method involves an oven having a structure similar to that of a conventional heat or thermochemical treatment oven with a rarefied atmosphere, this oven comprising its own heating means, by convection, by radiation, coherent or not, or by induction, its own regulation means, a generator of process gas and current passages passing through the wall of the furnace and connected to the electrodes (anodes-cathodes) used for generating the plasma.
  • the supply of these electrodes can be ensured from the three-phase or single-phase industrial network by means of a generator comprising a controlled rectifier making it possible to obtain a variable DC voltage between 0 and the mains voltage, an inverter making it possible to transform this direct voltage in particular alternating voltage with variable amplitude and duty cycle, then rectified to obtain monopolar pulses at high voltage of the order of 300 to 1500 V and at high frequency of the order of 100 Hz to 10 K Hertz which supply the oven.
  • a generator comprising a controlled rectifier making it possible to obtain a variable DC voltage between 0 and the mains voltage, an inverter making it possible to transform this direct voltage in particular alternating voltage with variable amplitude and duty cycle, then rectified to obtain monopolar pulses at high voltage of the order of 300 to 1500 V and at high frequency of the order of 100 Hz to 10 K Hertz which supply the oven.
  • the two types of heating can be used independently, alternately or even simultaneously during the treatment (heating means specific to the oven and operation in hot plasma mode).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Plasma Technology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
EP82400407A 1981-03-13 1982-03-09 Procédé de traitements thermochimiques de métaux par bombardement ionique Expired EP0062550B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82400407T ATE37907T1 (de) 1981-03-13 1982-03-09 Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8105107 1981-03-13
FR8105107A FR2501727A1 (fr) 1981-03-13 1981-03-13 Procede de traitements thermochimiques de metaux par bombardement ionique

Publications (2)

Publication Number Publication Date
EP0062550A1 EP0062550A1 (fr) 1982-10-13
EP0062550B1 true EP0062550B1 (fr) 1988-10-12

Family

ID=9256233

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82400407A Expired EP0062550B1 (fr) 1981-03-13 1982-03-09 Procédé de traitements thermochimiques de métaux par bombardement ionique

Country Status (6)

Country Link
US (2) US4490190A (enrdf_load_stackoverflow)
EP (1) EP0062550B1 (enrdf_load_stackoverflow)
JP (1) JPS57210971A (enrdf_load_stackoverflow)
AT (1) ATE37907T1 (enrdf_load_stackoverflow)
DE (1) DE3279106D1 (enrdf_load_stackoverflow)
FR (1) FR2501727A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238993C1 (enrdf_load_stackoverflow) * 1992-01-20 1993-07-01 Leybold Durferrit Gmbh, 5000 Koeln, De

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3322341A1 (de) * 1983-06-22 1985-01-03 Siegfried Dr.-Ing. 5135 Selfkant Strämke Verfahren und vorrichtung zur oberflaechenbehandlung von werkstuecken durch glimmentladung
US4700315A (en) * 1983-08-29 1987-10-13 Wellman Thermal Systems Corporation Method and apparatus for controlling the glow discharge process
US4568396A (en) * 1984-10-03 1986-02-04 The United States Of America As Represented By The Secretary Of The Navy Wear improvement in titanium alloys by ion implantation
FR2587729B1 (fr) * 1985-09-24 1988-12-23 Centre Nat Rech Scient Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume
US4693760A (en) * 1986-05-12 1987-09-15 Spire Corporation Ion implanation of titanium workpieces without surface discoloration
CH671407A5 (enrdf_load_stackoverflow) * 1986-06-13 1989-08-31 Balzers Hochvakuum
JPS6333553A (ja) * 1986-07-24 1988-02-13 Masanobu Nunogaki プラズマ源窒化法
GB8625912D0 (en) * 1986-10-29 1986-12-03 Electricity Council Thermochemical treatment
DE3700633C2 (de) * 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US4777109A (en) * 1987-05-11 1988-10-11 Robert Gumbinner RF plasma treated photosensitive lithographic printing plates
US4853046A (en) * 1987-09-04 1989-08-01 Surface Combustion, Inc. Ion carburizing
US5127967A (en) * 1987-09-04 1992-07-07 Surface Combustion, Inc. Ion carburizing
US4872922A (en) * 1988-03-11 1989-10-10 Spire Corporation Method and apparatus for the ion implantation of spherical surfaces
US5025365A (en) * 1988-11-14 1991-06-18 Unisys Corporation Hardware implemented cache coherency protocol with duplicated distributed directories for high-performance multiprocessors
US4968006A (en) * 1989-07-21 1990-11-06 Spire Corporation Ion implantation of spherical surfaces
US5079032A (en) * 1989-07-21 1992-01-07 Spire Corporation Ion implantation of spherical surfaces
US5152795A (en) * 1990-04-25 1992-10-06 Spire Corporation Surgical implants and method
US5123924A (en) * 1990-04-25 1992-06-23 Spire Corporation Surgical implants and method
US5226975A (en) * 1991-03-20 1993-07-13 Cummins Engine Company, Inc. Plasma nitride chromium plated coating method
FR2679258B1 (fr) * 1991-07-16 1993-11-19 Centre Stephanois Recherc Meca Procede de traitement de pieces en metal ferreux pour ameliorer simultanement leur resistance a la corrosion et leurs proprietes de friction.
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
CH689767A5 (de) 1992-03-24 1999-10-15 Balzers Hochvakuum Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage.
FR2689976B1 (fr) * 1992-04-14 1995-06-30 Innovatique Sa Procede et dispositif pour la determination et le controle de la composition du melange gazeux reactif utilise au cours d'un traitement thermochimique sous atmosphere rarefiee.
US5868878A (en) * 1993-08-27 1999-02-09 Hughes Electronics Corporation Heat treatment by plasma electron heating and solid/gas jet cooling
DE4427902C1 (de) * 1994-08-06 1995-03-30 Leybold Durferrit Gmbh Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasmaentladung
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JPH11316919A (ja) 1998-04-30 1999-11-16 Hitachi Ltd スピントンネル磁気抵抗効果型磁気ヘッド
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
JP2003506883A (ja) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
RU2208064C1 (ru) * 2001-11-19 2003-07-10 Уфимский государственный авиационный технический университет Способ электронно-ионного азотирования крупногабаритных изделий в низкотемпературной газоразрядной плазме и устройство для его осуществления
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
JP4257157B2 (ja) * 2003-06-13 2009-04-22 本田技研工業株式会社 窒化処理方法及び装置
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US20100294751A1 (en) * 2009-05-22 2010-11-25 Innovative Engineering & Product Development, Inc. Variable frequency heating controller
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
BR102014026134B1 (pt) * 2014-10-20 2022-09-27 Universidade Federal De Santa Catarina Processo e reator de plasma para tratamento termoquímico de superfície de peças metálicas

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91406C (enrdf_load_stackoverflow) * 1950-08-03
US3228809A (en) * 1953-12-09 1966-01-11 Berghaus Elektrophysik Anst Method of regulating an electric glow discharge and discharge vessel therefor
US3108900A (en) * 1959-04-13 1963-10-29 Cornelius A Papp Apparatus and process for producing coatings on metals
US3190772A (en) * 1960-02-10 1965-06-22 Berghaus Bernhard Method of hardening work in an electric glow discharge
GB1255321A (en) * 1968-03-11 1971-12-01 Lucas Industries Ltd Surface diffusion processes using electrical glow discharges
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
FR2332336A1 (fr) * 1975-11-21 1977-06-17 Vide & Traitement Sa Procede et four pour la realisation de traitements de metaux par bombardement ionique
FR2332337A1 (fr) * 1975-11-21 1977-06-17 Vide & Traitement Sa Four de traitement thermique ou thermochimique par bombardement ionique
CH611938A5 (enrdf_load_stackoverflow) * 1976-05-19 1979-06-29 Battelle Memorial Institute
FR2379615A1 (fr) * 1977-02-08 1978-09-01 Vide & Traitement Sa Procede de traitement thermochimique de metaux
JPS5429845A (en) * 1977-08-10 1979-03-06 Kawasaki Heavy Ind Ltd Ion nitriding treatment method
US4331856A (en) * 1978-10-06 1982-05-25 Wellman Thermal Systems Corporation Control system and method of controlling ion nitriding apparatus
US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
JPS5813625B2 (ja) * 1979-12-12 1983-03-15 超エル・エス・アイ技術研究組合 ガスプラズマ食刻法
US4297387A (en) * 1980-06-04 1981-10-27 Battelle Development Corporation Cubic boron nitride preparation
US4342631A (en) * 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4238993C1 (enrdf_load_stackoverflow) * 1992-01-20 1993-07-01 Leybold Durferrit Gmbh, 5000 Koeln, De

Also Published As

Publication number Publication date
FR2501727B1 (enrdf_load_stackoverflow) 1983-06-03
JPS57210971A (en) 1982-12-24
DE3279106D1 (en) 1988-11-17
EP0062550A1 (fr) 1982-10-13
ATE37907T1 (de) 1988-10-15
US4672170A (en) 1987-06-09
FR2501727A1 (fr) 1982-09-17
US4490190A (en) 1984-12-25

Similar Documents

Publication Publication Date Title
EP0062550B1 (fr) Procédé de traitements thermochimiques de métaux par bombardement ionique
US4229232A (en) Method involving pulsed beam processing of metallic and dielectric materials
US5473165A (en) Method and apparatus for altering material
RU2004111488A (ru) Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы
FR2674768A1 (fr) Procede de traitement photochimique d'un materiau utilisant une source de lumiere a tubes a eclairs.
EP0645461A1 (en) Heat treatment by plasma electron heating and solid/gas jet cooling
US3425223A (en) Electrothermal thruster
JP2009509130A (ja) 熱エネルギーの生成方法
Vadikkeettil et al. Comparative study of plasma torch characteristics using air and carbon dioxide
JP3936892B2 (ja) プラズマ浸炭処理方法および同処理装置
US4900371A (en) Method and apparatus for thermochemical treatment
JPH08170162A (ja) パルス状に運転されるプラズマ放電装置を用いて浸炭可能な材料から成る構造部材を浸炭する方法
Vankan et al. Absolute density measurements of ammonia produced via plasma-activated catalysis
WO2012150877A2 (ru) Способ модификации поверхностных свойств материалов и изделий
CN1473952A (zh) 常温下微波等离子体和激光联合处理材料表面的方法
RU2190484C1 (ru) Способ плазменного осаждения полимерных покрытий и способ генерации плазмы
FR2725015A1 (fr) Four utilisable pour la nitruration a basse pression d'une piece metallique
JP3721399B2 (ja) 酸化亜鉛紫外発光体の製造方法
EP2110007B1 (fr) Dispositif pour générer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques
RU2788784C1 (ru) Способ зажигания дуги при ручной дуговой сварке
RU2324255C2 (ru) Универсальный дуговой источник вуф-фотонов и химически активных частиц
JPH0367496A (ja) 誘導プラズマ発生装置
Baltog et al. Thermal stabilization of the discharge in a nitrogen laser
SU1095673A1 (ru) Способ азотировани металлических изделий
Stăncioiu et al. MODERN HEAT TREATMENTS APPLIED TO MACHINE PARTS.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT BE CH DE GB IT LI LU NL SE

17P Request for examination filed

Effective date: 19830217

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: INNOVATIQUE S.A.

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH DE GB IT LI LU NL SE

REF Corresponds to:

Ref document number: 37907

Country of ref document: AT

Date of ref document: 19881015

Kind code of ref document: T

REF Corresponds to:

Ref document number: 3279106

Country of ref document: DE

Date of ref document: 19881117

ITF It: translation for a ep patent filed
GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
PLBI Opposition filed

Free format text: ORIGINAL CODE: 0009260

26 Opposition filed

Opponent name: PLASMA TECHNIK GRUEN GMBH

Effective date: 19890712

NLR1 Nl: opposition has been filed with the epo

Opponent name: PLASMA TECHNIK GRUEN GMBH

PLAB Opposition data, opponent's data or that of the opponent's representative modified

Free format text: ORIGINAL CODE: 0009299OPPO

R26 Opposition filed (corrected)

Opponent name: PLASMA TECHNIK GRUEN GMBH

Effective date: 19890712

ITTA It: last paid annual fee
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 19920205

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 19920211

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: LU

Payment date: 19920220

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 19920228

Year of fee payment: 11

Ref country code: BE

Payment date: 19920228

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19920306

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19920331

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19920511

Year of fee payment: 11

EPTA Lu: last paid annual fee
RDAG Patent revoked

Free format text: ORIGINAL CODE: 0009271

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: PATENT REVOKED

27W Patent revoked

Effective date: 19921111

GBPR Gb: patent revoked under art. 102 of the ep convention designating the uk as contracting state

Free format text: 921111

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

NLR2 Nl: decision of opposition
EUG Se: european patent has lapsed

Ref document number: 82400407.1

Effective date: 19930512

APAH Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNO