EA201690366A1 - НАНОПРОВОЛОЧНЫЕ СОЛНЕЧНЫЕ ЭЛЕМЕНТЫ С РАДИАЛЬНЫМИ p-n-ПЕРЕХОДАМИ - Google Patents
НАНОПРОВОЛОЧНЫЕ СОЛНЕЧНЫЕ ЭЛЕМЕНТЫ С РАДИАЛЬНЫМИ p-n-ПЕРЕХОДАМИInfo
- Publication number
- EA201690366A1 EA201690366A1 EA201690366A EA201690366A EA201690366A1 EA 201690366 A1 EA201690366 A1 EA 201690366A1 EA 201690366 A EA201690366 A EA 201690366A EA 201690366 A EA201690366 A EA 201690366A EA 201690366 A1 EA201690366 A1 EA 201690366A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- nanoprocuit
- transitions
- radial
- solar elements
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002070 nanowire Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Описан фотоэлектрический элемент, содержащий по меньшей мере одну нанопроволочную структуру, прикрепленную к подложке, при этом каждая по меньшей мере из одной нанопроволочной структуры содержит сильнолегированный сердечник р-типа, проксимальный конец которого прикреплен к подложке, а дистальный конец находится на удалении от подложки, и оболочку n-типа вокруг сердечника р-типа.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1314566.9A GB2517186A (en) | 2013-08-14 | 2013-08-14 | Radial P-N junction nanowire solar cells |
GB1400087.1A GB2517224A (en) | 2013-08-14 | 2014-01-03 | Radial P-N Junction nanowire solar cells |
GB1406860.5A GB2517234A (en) | 2013-08-14 | 2014-04-16 | Radial P-N junction nanowire solar cells |
PCT/EP2014/067457 WO2015022414A1 (en) | 2013-08-14 | 2014-08-14 | Radial p-n junction nanowire solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
EA201690366A1 true EA201690366A1 (ru) | 2016-07-29 |
EA030596B1 EA030596B1 (ru) | 2018-08-31 |
Family
ID=49262169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201690366A EA030596B1 (ru) | 2013-08-14 | 2014-08-14 | НАНОПРОВОЛОЧНЫЕ СОЛНЕЧНЫЕ ЭЛЕМЕНТЫ С РАДИАЛЬНЫМИ p-n-ПЕРЕХОДАМИ |
Country Status (12)
Country | Link |
---|---|
US (1) | US20160197206A1 (ru) |
EP (1) | EP3033773B1 (ru) |
JP (1) | JP6420834B2 (ru) |
KR (1) | KR102322321B1 (ru) |
CN (1) | CN105874608B (ru) |
AU (1) | AU2014307879B2 (ru) |
CA (1) | CA2921290A1 (ru) |
EA (1) | EA030596B1 (ru) |
GB (3) | GB2517186A (ru) |
MY (1) | MY175405A (ru) |
SG (1) | SG11201601033SA (ru) |
WO (1) | WO2015022414A1 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU209840U1 (ru) * | 2021-10-21 | 2022-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Устройство для сбора солнечного излучения |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
ES2821019T3 (es) | 2015-07-13 | 2021-04-23 | Crayonano As | Nanocables o nanopirámides cultivados sobre un sustrato grafítico |
ES2901111T3 (es) | 2015-07-13 | 2022-03-21 | Crayonano As | Diodos emisores de luz y fotodetectores en forma de nanohilos/nanopirámides |
EP3329509A1 (en) | 2015-07-31 | 2018-06-06 | Crayonano AS | Process for growing nanowires or nanopyramids on graphitic substrates |
WO2017091269A2 (en) * | 2015-08-31 | 2017-06-01 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
JP6599729B2 (ja) * | 2015-10-27 | 2019-10-30 | 京セラ株式会社 | 光電変換装置 |
CN106898666B (zh) * | 2017-01-12 | 2018-08-28 | 华北电力大学 | 一种径向(110)体硅太阳电池及其制备方法 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN107331715B (zh) * | 2017-07-03 | 2020-06-30 | 京东方科技集团股份有限公司 | 一种太阳能电池及其制作方法 |
RU190887U1 (ru) * | 2019-05-24 | 2019-07-16 | федеральное государственное бюджетное учреждение высшего образования и науки "Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук" | Солнечный элемент на основе пластинчатых нанокристаллов (al,ga)as с поперечными гетеропереходами |
US11355540B2 (en) * | 2020-04-15 | 2022-06-07 | Visera Technologies Company Limited | Optical device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100193768A1 (en) * | 2005-06-20 | 2010-08-05 | Illuminex Corporation | Semiconducting nanowire arrays for photovoltaic applications |
US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
US20080135089A1 (en) * | 2006-11-15 | 2008-06-12 | General Electric Company | Graded hybrid amorphous silicon nanowire solar cells |
CN101262024A (zh) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | 硅纳米线/非晶硅异质结太阳能电池 |
US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
FR2932013A1 (fr) * | 2008-10-10 | 2009-12-04 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique a nanofils |
TW201029196A (en) * | 2008-10-23 | 2010-08-01 | Alta Devices Inc | Thin absorber layer of a photovoltaic device |
EP2419938A2 (en) * | 2009-04-15 | 2012-02-22 | Sol Voltaics AB | Multi-junction photovoltaic cell with nanowires |
US10505062B2 (en) * | 2009-07-09 | 2019-12-10 | Faquir Chand Jain | High efficiency tandem solar cells and a method for fabricating same |
EP2459975A4 (en) * | 2009-07-30 | 2013-10-23 | Hewlett Packard Development Co | NANODRAHT BASED SYSTEMS FOR RAMAN SPECTROSCOPY |
KR101139443B1 (ko) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | 이종접합 태양전지와 그 제조방법 |
US20120199187A1 (en) * | 2009-10-22 | 2012-08-09 | Sol Voltaics Ab | Nanowire tunnel diode and method for making the same |
KR20110057989A (ko) * | 2009-11-25 | 2011-06-01 | 삼성전자주식회사 | 그래핀과 나노구조체의 복합 구조체 및 그 제조방법 |
JP2011135058A (ja) * | 2009-11-30 | 2011-07-07 | Honda Motor Co Ltd | 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法 |
JP2011138804A (ja) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
US20110240099A1 (en) * | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
KR101142545B1 (ko) * | 2010-10-25 | 2012-05-08 | 서울대학교산학협력단 | 태양전지 및 그 제조 방법 |
GB201021112D0 (en) * | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
JP5409707B2 (ja) * | 2011-06-15 | 2014-02-05 | シャープ株式会社 | 半導体素子、半導体素子の製造方法、発光ダイオード、光電変換素子、太陽電池、照明装置、バックライトおよび表示装置 |
FR2984599B1 (fr) * | 2011-12-20 | 2014-01-17 | Commissariat Energie Atomique | Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice |
GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
-
2013
- 2013-08-14 GB GB1314566.9A patent/GB2517186A/en not_active Withdrawn
-
2014
- 2014-01-03 GB GB1400087.1A patent/GB2517224A/en not_active Withdrawn
- 2014-04-16 GB GB1406860.5A patent/GB2517234A/en not_active Withdrawn
- 2014-08-14 AU AU2014307879A patent/AU2014307879B2/en not_active Ceased
- 2014-08-14 EP EP14752845.9A patent/EP3033773B1/en active Active
- 2014-08-14 KR KR1020167006733A patent/KR102322321B1/ko active IP Right Grant
- 2014-08-14 SG SG11201601033SA patent/SG11201601033SA/en unknown
- 2014-08-14 WO PCT/EP2014/067457 patent/WO2015022414A1/en active Application Filing
- 2014-08-14 CA CA2921290A patent/CA2921290A1/en not_active Abandoned
- 2014-08-14 US US14/911,869 patent/US20160197206A1/en not_active Abandoned
- 2014-08-14 CN CN201480055147.9A patent/CN105874608B/zh active Active
- 2014-08-14 JP JP2016533929A patent/JP6420834B2/ja active Active
- 2014-08-14 MY MYPI2016700509A patent/MY175405A/en unknown
- 2014-08-14 EA EA201690366A patent/EA030596B1/ru not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU209840U1 (ru) * | 2021-10-21 | 2022-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Устройство для сбора солнечного излучения |
Also Published As
Publication number | Publication date |
---|---|
AU2014307879A1 (en) | 2016-03-10 |
GB201406860D0 (en) | 2014-05-28 |
KR102322321B1 (ko) | 2021-11-05 |
GB2517224A (en) | 2015-02-18 |
EP3033773A1 (en) | 2016-06-22 |
JP6420834B2 (ja) | 2018-11-07 |
GB201400087D0 (en) | 2014-02-19 |
JP2016530721A (ja) | 2016-09-29 |
AU2014307879B2 (en) | 2018-11-15 |
EA030596B1 (ru) | 2018-08-31 |
MY175405A (en) | 2020-06-24 |
CN105874608B (zh) | 2018-11-13 |
EP3033773B1 (en) | 2022-05-04 |
GB2517186A (en) | 2015-02-18 |
CA2921290A1 (en) | 2015-02-19 |
GB2517234A (en) | 2015-02-18 |
SG11201601033SA (en) | 2016-03-30 |
KR20160061997A (ko) | 2016-06-01 |
CN105874608A (zh) | 2016-08-17 |
WO2015022414A1 (en) | 2015-02-19 |
US20160197206A1 (en) | 2016-07-07 |
GB201314566D0 (en) | 2013-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EA201690366A1 (ru) | НАНОПРОВОЛОЧНЫЕ СОЛНЕЧНЫЕ ЭЛЕМЕНТЫ С РАДИАЛЬНЫМИ p-n-ПЕРЕХОДАМИ | |
EA201492235A1 (ru) | Солнечные элементы | |
EP2986845A4 (en) | TEMPORARY POWER INCREASE OF WIND TURBINES TO MAXIMIZE THE OUTPUT PERFORMANCE | |
SG11201604593UA (en) | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures | |
DE112014003491T8 (de) | Photoelektrisches Umwandlungselement und Solarzelle | |
EP3005461B8 (en) | Complete oxidation of sugars to electricity by using cell-free synthetic enzymatic pathways | |
PL3039130T3 (pl) | Komórki drożdży konwertujące glicerol i kwas octowy z ulepszoną konwersją kwasu octowego | |
SG11201506763YA (en) | Integrated power generation and chemical production using fuel cells | |
EP3061135A4 (en) | Semiconductor structure with high energy dopant implantation technology | |
WO2014136983A3 (en) | Solar panel and timepiece including solar panel | |
CL2015002957A1 (es) | Fórmula infantil con un bajo contenido de (mcfa) en proporciones específicas y un contenido relativamente elevado de ácidos grasos insaturados, y su uso para promover el establecimiento saludable de la función cognitiva en lactantes. | |
DE112014003494T8 (de) | Photoelektrisches Umwandlungselement und Solarzelle | |
EP3591713A4 (en) | PERC SOLAR BATTERY CAPABLE OF IMPROVING THE EFFICIENCY OF PHOTOELECTRIC CONVERSION AND ITS PREPARATION PROCESS | |
EP3029315A4 (en) | Wind power generation tower provided with gyromill type wind turbine | |
EP2996125A4 (en) | Dye-sensitized SOLAR CELL WITH HIGH LIFE AND HIGH CONVERSION EFFICIENCY | |
WO2015102729A3 (en) | Optoelectronic nuclear batteries based on radionuclide nanoencapsulation and organic photodiodes | |
WO2012162494A3 (en) | Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells | |
EP2958186A4 (en) | PHOTOELECTRIC CONVERTER ELEMENT AND SOLAR CELL THEREWITH | |
EA201591500A1 (ru) | Усовершенствованная сборка из солнечных блоков и способ ее изготовления | |
DK3029316T3 (da) | Vindkraftgenereringstårn | |
EP3041944A4 (en) | Conversion of glycerol to 1,3-propanediol under haloalkaline conditions | |
Ko et al. | A Study of Operating Technique to Maximize Power Sales Revenue for Wind Farm linked VRFB-ESS | |
Ostanina | EAST IN CREATION LESIA UKRAINKA | |
TH161635S (th) | ขั้วไฟฟ้า | |
TH60967S1 (th) | ขั้วไฟฟ้า |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG TJ TM |
|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): RU |