SG11201601033SA - Radial p-n junction nanowire solar cells - Google Patents
Radial p-n junction nanowire solar cellsInfo
- Publication number
- SG11201601033SA SG11201601033SA SG11201601033SA SG11201601033SA SG11201601033SA SG 11201601033S A SG11201601033S A SG 11201601033SA SG 11201601033S A SG11201601033S A SG 11201601033SA SG 11201601033S A SG11201601033S A SG 11201601033SA SG 11201601033S A SG11201601033S A SG 11201601033SA
- Authority
- SG
- Singapore
- Prior art keywords
- radial
- solar cells
- nanowire solar
- junction nanowire
- junction
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1314566.9A GB2517186A (en) | 2013-08-14 | 2013-08-14 | Radial P-N junction nanowire solar cells |
GB1400087.1A GB2517224A (en) | 2013-08-14 | 2014-01-03 | Radial P-N Junction nanowire solar cells |
GB1406860.5A GB2517234A (en) | 2013-08-14 | 2014-04-16 | Radial P-N junction nanowire solar cells |
PCT/EP2014/067457 WO2015022414A1 (en) | 2013-08-14 | 2014-08-14 | Radial p-n junction nanowire solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201601033SA true SG11201601033SA (en) | 2016-03-30 |
Family
ID=49262169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201601033SA SG11201601033SA (en) | 2013-08-14 | 2014-08-14 | Radial p-n junction nanowire solar cells |
Country Status (12)
Country | Link |
---|---|
US (1) | US20160197206A1 (en) |
EP (1) | EP3033773B1 (en) |
JP (1) | JP6420834B2 (en) |
KR (1) | KR102322321B1 (en) |
CN (1) | CN105874608B (en) |
AU (1) | AU2014307879B2 (en) |
CA (1) | CA2921290A1 (en) |
EA (1) | EA030596B1 (en) |
GB (3) | GB2517186A (en) |
MY (1) | MY175405A (en) |
SG (1) | SG11201601033SA (en) |
WO (1) | WO2015022414A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
CN108352424B (en) | 2015-07-13 | 2022-02-01 | 科莱约纳诺公司 | Nanowires or nanopyramids grown on graphite substrates |
WO2017009394A1 (en) | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
JP7009358B2 (en) | 2015-07-31 | 2022-01-25 | クラヨナノ エーエス | How to grow nanowires or nanopyramids on a graphite substrate |
US20180254363A1 (en) * | 2015-08-31 | 2018-09-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
JP6599729B2 (en) * | 2015-10-27 | 2019-10-30 | 京セラ株式会社 | Photoelectric conversion device |
CN106898666B (en) * | 2017-01-12 | 2018-08-28 | 华北电力大学 | A kind of radial direction (110) body silicon solar cell and preparation method thereof |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN107331715B (en) * | 2017-07-03 | 2020-06-30 | 京东方科技集团股份有限公司 | Solar cell and manufacturing method thereof |
RU190887U1 (en) * | 2019-05-24 | 2019-07-16 | федеральное государственное бюджетное учреждение высшего образования и науки "Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук" | SOLAR ELEMENT BASED ON PLATE NANOCRYSTALS (AL, GA) AS WITH TRANSVERSE HETERO-TRANSMISSIONS |
US11355540B2 (en) * | 2020-04-15 | 2022-06-07 | Visera Technologies Company Limited | Optical device |
RU209840U1 (en) * | 2021-10-21 | 2022-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | DEVICE FOR COLLECTING SOLAR RADIATION |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100193768A1 (en) * | 2005-06-20 | 2010-08-05 | Illuminex Corporation | Semiconducting nanowire arrays for photovoltaic applications |
US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
US20080135089A1 (en) * | 2006-11-15 | 2008-06-12 | General Electric Company | Graded hybrid amorphous silicon nanowire solar cells |
CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nano line/non crystal heterogeneous agglomeration solar battery |
US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
FR2932013A1 (en) * | 2008-10-10 | 2009-12-04 | Commissariat Energie Atomique | Manufacturing photovoltaic cells having nanowires, comprises uniformly depositing sub-layer of semi-conductor material, forming a nanowire having the same type of doping on a sub-layer, and forming emitter layer on sub-layer |
EP2351098A2 (en) * | 2008-10-23 | 2011-08-03 | Alta Devices, Inc. | Thin absorber layer of a photovoltaic device |
CN102484147B (en) * | 2009-04-15 | 2015-11-25 | 索尔伏打电流公司 | There is the multi-junction photovoltaic battery of nano wire |
US10505062B2 (en) * | 2009-07-09 | 2019-12-10 | Faquir Chand Jain | High efficiency tandem solar cells and a method for fabricating same |
CN102472665A (en) * | 2009-07-30 | 2012-05-23 | 惠普开发有限公司 | Nanowire-based systems for performing raman spectroscopy |
KR101139443B1 (en) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | Hetero-junction solar cell and fabrication method thereof |
KR20120099441A (en) * | 2009-10-22 | 2012-09-10 | 솔 발테익스 에이비 | Nanowire tunnel diode and method for making the same |
KR20110057989A (en) * | 2009-11-25 | 2011-06-01 | 삼성전자주식회사 | Composite structure of graphene and nanostructure and method of manufacturing the same |
JP2011135058A (en) * | 2009-11-30 | 2011-07-07 | Honda Motor Co Ltd | Solar cell element, color sensor, and method of manufacturing light emitting element and light receiving element |
JP2011138804A (en) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | Nanowire solar cell and method of manufacturing the same |
US20110240099A1 (en) * | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
KR101142545B1 (en) * | 2010-10-25 | 2012-05-08 | 서울대학교산학협력단 | Solar cell and manufacturing method of the same |
GB201021112D0 (en) * | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
JP5409707B2 (en) * | 2011-06-15 | 2014-02-05 | シャープ株式会社 | Semiconductor element, method for manufacturing semiconductor element, light emitting diode, photoelectric conversion element, solar cell, lighting device, backlight and display device |
FR2984599B1 (en) * | 2011-12-20 | 2014-01-17 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A SEMICONDUCTOR MICRO- OR NANO-FILM, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NAN-WIRE, AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE |
GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
-
2013
- 2013-08-14 GB GB1314566.9A patent/GB2517186A/en not_active Withdrawn
-
2014
- 2014-01-03 GB GB1400087.1A patent/GB2517224A/en not_active Withdrawn
- 2014-04-16 GB GB1406860.5A patent/GB2517234A/en not_active Withdrawn
- 2014-08-14 US US14/911,869 patent/US20160197206A1/en not_active Abandoned
- 2014-08-14 CA CA2921290A patent/CA2921290A1/en not_active Abandoned
- 2014-08-14 JP JP2016533929A patent/JP6420834B2/en active Active
- 2014-08-14 KR KR1020167006733A patent/KR102322321B1/en active IP Right Grant
- 2014-08-14 MY MYPI2016700509A patent/MY175405A/en unknown
- 2014-08-14 EA EA201690366A patent/EA030596B1/en not_active IP Right Cessation
- 2014-08-14 SG SG11201601033SA patent/SG11201601033SA/en unknown
- 2014-08-14 EP EP14752845.9A patent/EP3033773B1/en active Active
- 2014-08-14 CN CN201480055147.9A patent/CN105874608B/en active Active
- 2014-08-14 WO PCT/EP2014/067457 patent/WO2015022414A1/en active Application Filing
- 2014-08-14 AU AU2014307879A patent/AU2014307879B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EA030596B1 (en) | 2018-08-31 |
GB2517186A (en) | 2015-02-18 |
CA2921290A1 (en) | 2015-02-19 |
GB2517224A (en) | 2015-02-18 |
JP6420834B2 (en) | 2018-11-07 |
GB201314566D0 (en) | 2013-09-25 |
GB201400087D0 (en) | 2014-02-19 |
GB2517234A (en) | 2015-02-18 |
WO2015022414A1 (en) | 2015-02-19 |
EP3033773A1 (en) | 2016-06-22 |
AU2014307879A1 (en) | 2016-03-10 |
KR20160061997A (en) | 2016-06-01 |
KR102322321B1 (en) | 2021-11-05 |
CN105874608B (en) | 2018-11-13 |
MY175405A (en) | 2020-06-24 |
US20160197206A1 (en) | 2016-07-07 |
JP2016530721A (en) | 2016-09-29 |
EP3033773B1 (en) | 2022-05-04 |
AU2014307879B2 (en) | 2018-11-15 |
CN105874608A (en) | 2016-08-17 |
GB201406860D0 (en) | 2014-05-28 |
EA201690366A1 (en) | 2016-07-29 |
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