EA201001707A1 - Преобразователь электромагнитного излучения и батарея - Google Patents

Преобразователь электромагнитного излучения и батарея

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Publication number
EA201001707A1
EA201001707A1 EA201001707A EA201001707A EA201001707A1 EA 201001707 A1 EA201001707 A1 EA 201001707A1 EA 201001707 A EA201001707 A EA 201001707A EA 201001707 A EA201001707 A EA 201001707A EA 201001707 A1 EA201001707 A1 EA 201001707A1
Authority
EA
Eurasian Patent Office
Prior art keywords
type
conductivity
electromagnetic radiation
substrate
regions
Prior art date
Application number
EA201001707A
Other languages
English (en)
Other versions
EA017920B1 (ru
Inventor
Юрий Дмитриевич БУДИШЕВСКИЙ
Валерий Эдуардович Цой
Татьяна Сергеевна ЦОЙ
Броня ЦОЙ
Original Assignee
Броня ЦОЙ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Броня ЦОЙ filed Critical Броня ЦОЙ
Publication of EA201001707A1 publication Critical patent/EA201001707A1/ru
Publication of EA017920B1 publication Critical patent/EA017920B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Изобретение относится к полупроводниковой электронике и может быть использовано для изготовления высокоэффективных широкополосных преобразователей электромагнитного излучения, напрямую преобразующих падающее излучение как в оптически видимом, так и в невидимом оптически диапазоне частот в электродвижущую силу. Преобразователь электромагнитного излучения по изобретению содержит полупроводниковую подложку, на лицевой стороне которой сформированы N>1 дискретных локальных областей первого типа проводимости, подложка имеет второй тип проводимости, так что указанные области первого типа проводимости образуют с подложкой N>1 p-n переходов, объединенных в токовый узел. При этом вне областей первого типа проводимости на лицевой стороне подложки сформированы изотипные переходы, создающие неосновным носителям заряда отталкивающие изотипные барьеры. Указанное выполнение преобразователя обеспечивает его работу в более широком диапазоне частот электромагнитного излучения, способствует повышению его КПД и мощности по сравнению с известными из уровня техники аналогами, а также позволяет достичь высокой точности и стабильности его выходных характеристик. Описаны также батареи, сформированные из преобразователей указанного типа.
EA201001707A 2008-05-20 2008-05-20 Преобразователь электромагнитного излучения и батарея EA017920B1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2008/000314 WO2009142529A1 (ru) 2008-05-20 2008-05-20 Преобразователь электромагнитного излучения и батарея

Publications (2)

Publication Number Publication Date
EA201001707A1 true EA201001707A1 (ru) 2011-04-29
EA017920B1 EA017920B1 (ru) 2013-04-30

Family

ID=41340319

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201001707A EA017920B1 (ru) 2008-05-20 2008-05-20 Преобразователь электромагнитного излучения и батарея

Country Status (7)

Country Link
US (1) US20110248370A1 (ru)
EP (1) EP2323170A4 (ru)
KR (1) KR101111215B1 (ru)
CN (1) CN102187469B (ru)
EA (1) EA017920B1 (ru)
WO (1) WO2009142529A1 (ru)
ZA (1) ZA201009081B (ru)

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RU2507613C2 (ru) * 2012-01-30 2014-02-20 Федеральное Государственное Бюджетное Образовательное Учреждение "Дагестанский Государственный Технический Университет" (Дгту) Каскадное светоизлучающее термоэлектрическое устройство
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Also Published As

Publication number Publication date
KR20110010646A (ko) 2011-02-01
KR101111215B1 (ko) 2012-03-13
EA017920B1 (ru) 2013-04-30
EP2323170A4 (en) 2017-11-22
CN102187469A (zh) 2011-09-14
CN102187469B (zh) 2015-03-25
ZA201009081B (en) 2012-02-29
US20110248370A1 (en) 2011-10-13
WO2009142529A1 (ru) 2009-11-26
EP2323170A1 (en) 2011-05-18

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM RU