EA200970541A1 - Солнечные элементы - Google Patents

Солнечные элементы

Info

Publication number
EA200970541A1
EA200970541A1 EA200970541A EA200970541A EA200970541A1 EA 200970541 A1 EA200970541 A1 EA 200970541A1 EA 200970541 A EA200970541 A EA 200970541A EA 200970541 A EA200970541 A EA 200970541A EA 200970541 A1 EA200970541 A1 EA 200970541A1
Authority
EA
Eurasian Patent Office
Prior art keywords
silicon wafers
solar cells
phosphorus
dat
million
Prior art date
Application number
EA200970541A
Other languages
English (en)
Other versions
EA015668B1 (ru
Inventor
Эрик Энебакк
Кристиан Петер
Бернд Раабе
Рагнар Тронстад
Original Assignee
Элкем Солар Ас
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Элкем Солар Ас filed Critical Элкем Солар Ас
Publication of EA200970541A1 publication Critical patent/EA200970541A1/ru
Publication of EA015668B1 publication Critical patent/EA015668B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Данное изобретение относится к поликристаллическим кремниевым пластинам р-типа с большим временем жизни. Кремниевые пластины содержат 0,2-2,8 млн.д.ат. бора и 0,06-2,8 млн.д.ат. фосфора и/или мышьяка и подвергнуты диффузии фосфора и геттерированию фосфором при температуре выше 925°С. Изобретение также относится к способу изготовления таких поликристаллических кремниевых пластин и к солнечным элементам, содержащим такие кремниевые пластины.
EA200970541A 2006-12-04 2007-11-28 ПОЛИКРИСТАЛЛИЧЕСКАЯ КРЕМНИЕВАЯ ПЛАСТИНА p-ТИПА, ИМЕЮЩАЯ БОЛЬШОЕ ВРЕМЯ ЖИЗНИ НЕОСНОВНЫХ НОСИТЕЛЕЙ ЗАРЯДА, И СПОСОБ ЕЁ ПОЛУЧЕНИЯ EA015668B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20065586A NO333757B1 (no) 2006-12-04 2006-12-04 Solceller
PCT/NO2007/000422 WO2008069675A2 (en) 2006-12-04 2007-11-28 Multicrystalline silicon solar cells

Publications (2)

Publication Number Publication Date
EA200970541A1 true EA200970541A1 (ru) 2009-10-30
EA015668B1 EA015668B1 (ru) 2011-10-31

Family

ID=39492751

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200970541A EA015668B1 (ru) 2006-12-04 2007-11-28 ПОЛИКРИСТАЛЛИЧЕСКАЯ КРЕМНИЕВАЯ ПЛАСТИНА p-ТИПА, ИМЕЮЩАЯ БОЛЬШОЕ ВРЕМЯ ЖИЗНИ НЕОСНОВНЫХ НОСИТЕЛЕЙ ЗАРЯДА, И СПОСОБ ЕЁ ПОЛУЧЕНИЯ

Country Status (10)

Country Link
US (1) US8735203B2 (ru)
EP (1) EP2095405B1 (ru)
JP (1) JP5401322B2 (ru)
CN (1) CN101636823B (ru)
BR (1) BRPI0719420A2 (ru)
CA (1) CA2670527C (ru)
EA (1) EA015668B1 (ru)
ES (1) ES2882152T3 (ru)
NO (1) NO333757B1 (ru)
WO (1) WO2008069675A2 (ru)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009055685A1 (de) * 2009-11-25 2011-05-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Qualitätsverbesserung von Wafern sowie Verwendung des Verfahrens
US8071418B2 (en) * 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
RU2485632C1 (ru) * 2012-01-19 2013-06-20 Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения РАН (ИАПУ ДВО РАН) Способ создания светоизлучающего элемента
RU2485631C1 (ru) * 2012-01-19 2013-06-20 Учреждение Российской академии наук Институт автоматики и процессов управления Дальневосточного отделения РАН (ИАПУ ДВО РАН) Способ создания светоизлучающего элемента
US8709859B2 (en) * 2012-02-03 2014-04-29 Gamc Biotech Development Co., Ltd. Method for fabricating solar cell
CN104120494A (zh) * 2014-06-25 2014-10-29 上饶光电高科技有限公司 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺
RU2680606C1 (ru) * 2018-01-23 2019-02-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковых структур
CA3004436C (en) 2018-05-09 2021-06-01 Paige Whitehead Biodegradable light wand
CN113013296B (zh) * 2021-03-05 2023-07-28 赛维Ldk太阳能高科技(新余)有限公司 铸造单晶硅片黑丝的去除方法、hit异质结太阳能电池及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416051A (en) * 1979-01-22 1983-11-22 Westinghouse Electric Corp. Restoration of high infrared sensitivity in extrinsic silicon detectors
GB8808658D0 (en) 1988-04-13 1988-05-18 Lepetit Spa Aglycons of a/16686 antibiotics
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
JPH05218464A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体基体と太陽電池の製造方法及びこれらの方法により得られた半導体基体と太陽電池
US5627081A (en) * 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
CN1083396C (zh) * 1995-07-14 2002-04-24 昭和电工株式会社 高纯度硅的制造方法
JPH10251010A (ja) * 1997-03-14 1998-09-22 Kawasaki Steel Corp 太陽電池用シリコン
US6013872A (en) * 1997-04-25 2000-01-11 Bayer Ag Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
JP2004119867A (ja) * 2002-09-27 2004-04-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4319006B2 (ja) * 2003-10-23 2009-08-26 シャープ株式会社 太陽電池セルの製造方法
JP4761706B2 (ja) * 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
EP1730788A1 (en) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Process for manufacturing photovoltaic cells
JP4328303B2 (ja) * 2004-09-16 2009-09-09 株式会社サンリック 太陽光発電用多結晶シリコン原料および太陽光発電用シリコンウェーハ

Also Published As

Publication number Publication date
EP2095405A2 (en) 2009-09-02
WO2008069675A3 (en) 2008-11-20
BRPI0719420A2 (pt) 2014-02-11
US20100212738A1 (en) 2010-08-26
US8735203B2 (en) 2014-05-27
EP2095405B1 (en) 2021-07-07
NO20065586L (no) 2008-06-05
NO333757B1 (no) 2013-09-09
CN101636823B (zh) 2012-09-05
AU2007328538A1 (en) 2008-06-12
CA2670527A1 (en) 2008-06-12
JP2010512022A (ja) 2010-04-15
WO2008069675A2 (en) 2008-06-12
ES2882152T3 (es) 2021-12-01
CN101636823A (zh) 2010-01-27
EP2095405A4 (en) 2016-05-25
CA2670527C (en) 2014-02-04
JP5401322B2 (ja) 2014-01-29
EA015668B1 (ru) 2011-10-31

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Legal Events

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KG MD TJ TM

TC4A Change in name of a patent proprietor in a eurasian patent