DK419975A - STOCKS FIELD POWER TRANSISTOR WITH N-CHANNEL - Google Patents
STOCKS FIELD POWER TRANSISTOR WITH N-CHANNELInfo
- Publication number
- DK419975A DK419975A DK419975A DK419975A DK419975A DK 419975 A DK419975 A DK 419975A DK 419975 A DK419975 A DK 419975A DK 419975 A DK419975 A DK 419975A DK 419975 A DK419975 A DK 419975A
- Authority
- DK
- Denmark
- Prior art keywords
- channel
- power transistor
- field power
- stocks
- stocks field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2445137 | 1974-09-20 | ||
DE2445137A DE2445137C3 (en) | 1974-09-20 | 1974-09-20 | Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix |
DE19752505816 DE2505816C3 (en) | 1974-09-20 | 1975-02-12 | Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix |
DE2505816 | 1975-02-12 | ||
DE2513207A DE2513207C2 (en) | 1974-09-20 | 1975-03-25 | n-channel memory FET |
DE2513207 | 1975-03-25 | ||
DE2525062 | 1975-06-05 | ||
DE19752525062 DE2525062C2 (en) | 1975-06-05 | 1975-06-05 | N-channel memory FET array |
DE2525097 | 1975-06-05 | ||
DE19752525097 DE2525097C3 (en) | 1975-06-05 | 1975-06-05 | Method of operating an n-channel memory FET |
Publications (3)
Publication Number | Publication Date |
---|---|
DK419975A true DK419975A (en) | 1976-03-21 |
DK143923B DK143923B (en) | 1981-10-26 |
DK143923C DK143923C (en) | 1982-04-19 |
Family
ID=27510366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK419975A DK143923C (en) | 1974-09-20 | 1975-09-18 | PROCEDURE FOR OPERATING AN N-CHANNEL STOCK FIELD EFFECT TRANSISTOR AND N-CHANNEL STOCK FIELD EFFECT TRANSISTOR TO USE THE PROCEDURE |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5157255A (en) |
AT (1) | AT365000B (en) |
AU (1) | AU498494B2 (en) |
BE (1) | BE833633A (en) |
CA (1) | CA1070427A (en) |
CH (1) | CH607233A5 (en) |
DK (1) | DK143923C (en) |
FR (1) | FR2285677A1 (en) |
GB (1) | GB1517927A (en) |
IT (1) | IT1042632B (en) |
NL (1) | NL175561C (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
US4173766A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
SE7907193L (en) * | 1978-09-28 | 1980-03-29 | Rca Corp | Permanent memory |
JPS5560469U (en) * | 1978-10-20 | 1980-04-24 | ||
JPS5571072A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor nonvolatile memory |
JPS57160163A (en) * | 1981-03-27 | 1982-10-02 | Agency Of Ind Science & Technol | Nonvolatile semiconductor memory |
JPS5864068A (en) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | Non-volatile semiconductor memory |
JPH04307974A (en) * | 1991-04-05 | 1992-10-30 | Sharp Corp | Electrically erasable nonvolatile semiconductor storage device |
CN111739572A (en) * | 2019-03-25 | 2020-10-02 | 亿而得微电子股份有限公司 | Low-voltage quick erasing method for electronic writing erasable read-only memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526148B2 (en) * | 1972-05-18 | 1977-02-19 |
-
1975
- 1975-08-21 AT AT0646575A patent/AT365000B/en not_active IP Right Cessation
- 1975-09-09 GB GB3698375A patent/GB1517927A/en not_active Expired
- 1975-09-11 CA CA235,230A patent/CA1070427A/en not_active Expired
- 1975-09-12 AU AU84797/75A patent/AU498494B2/en not_active Expired
- 1975-09-16 FR FR7528356A patent/FR2285677A1/en active Granted
- 1975-09-16 CH CH1198075A patent/CH607233A5/xx not_active IP Right Cessation
- 1975-09-18 DK DK419975A patent/DK143923C/en not_active IP Right Cessation
- 1975-09-18 NL NL7511017A patent/NL175561C/en not_active IP Right Cessation
- 1975-09-18 IT IT2734475A patent/IT1042632B/en active
- 1975-09-19 JP JP11352275A patent/JPS5157255A/ja active Pending
- 1975-09-19 BE BE160218A patent/BE833633A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL175561B (en) | 1984-06-18 |
GB1517927A (en) | 1978-07-19 |
DK143923B (en) | 1981-10-26 |
BE833633A (en) | 1976-03-19 |
DK143923C (en) | 1982-04-19 |
FR2285677B1 (en) | 1981-05-29 |
NL175561C (en) | 1984-11-16 |
AU498494B2 (en) | 1979-03-15 |
NL7511017A (en) | 1976-03-23 |
JPS5157255A (en) | 1976-05-19 |
ATA646575A (en) | 1981-04-15 |
FR2285677A1 (en) | 1976-04-16 |
CH607233A5 (en) | 1978-11-30 |
CA1070427A (en) | 1980-01-22 |
AU8479775A (en) | 1977-03-17 |
IT1042632B (en) | 1980-01-30 |
AT365000B (en) | 1981-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUP | Patent expired |