IT1042632B - HORSE-EFFECT MEMORIZER TRANSTORE WITH CHANNEL N - Google Patents

HORSE-EFFECT MEMORIZER TRANSTORE WITH CHANNEL N

Info

Publication number
IT1042632B
IT1042632B IT27344/75A IT2734475A IT1042632B IT 1042632 B IT1042632 B IT 1042632B IT 27344/75 A IT27344/75 A IT 27344/75A IT 2734475 A IT2734475 A IT 2734475A IT 1042632 B IT1042632 B IT 1042632B
Authority
IT
Italy
Prior art keywords
transtore
memorizer
horse
channel
effect
Prior art date
Application number
IT27344/75A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445137A external-priority patent/DE2445137C3/en
Priority claimed from DE2505816A external-priority patent/DE2505816C3/en
Priority claimed from DE2513207A external-priority patent/DE2513207C2/en
Priority claimed from DE19752525062 external-priority patent/DE2525062C2/en
Priority claimed from DE19752525097 external-priority patent/DE2525097C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1042632B publication Critical patent/IT1042632B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IT27344/75A 1974-09-20 1975-09-18 HORSE-EFFECT MEMORIZER TRANSTORE WITH CHANNEL N IT1042632B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE2445137A DE2445137C3 (en) 1974-09-20 1974-09-20 Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE2505816A DE2505816C3 (en) 1974-09-20 1975-02-12 Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE2513207A DE2513207C2 (en) 1974-09-20 1975-03-25 n-channel memory FET
DE19752525062 DE2525062C2 (en) 1975-06-05 1975-06-05 N-channel memory FET array
DE19752525097 DE2525097C3 (en) 1975-06-05 1975-06-05 Method of operating an n-channel memory FET

Publications (1)

Publication Number Publication Date
IT1042632B true IT1042632B (en) 1980-01-30

Family

ID=27510366

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27344/75A IT1042632B (en) 1974-09-20 1975-09-18 HORSE-EFFECT MEMORIZER TRANSTORE WITH CHANNEL N

Country Status (11)

Country Link
JP (1) JPS5157255A (en)
AT (1) AT365000B (en)
AU (1) AU498494B2 (en)
BE (1) BE833633A (en)
CA (1) CA1070427A (en)
CH (1) CH607233A5 (en)
DK (1) DK143923C (en)
FR (1) FR2285677A1 (en)
GB (1) GB1517927A (en)
IT (1) IT1042632B (en)
NL (1) NL175561C (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391585A (en) * 1977-04-04 1978-08-11 Agency Of Ind Science & Technol Nonvolatile field effect transistor
US4173766A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
SE7907193L (en) * 1978-09-28 1980-03-29 Rca Corp Permanent memory
JPS5560469U (en) * 1978-10-20 1980-04-24
JPS5571072A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Semiconductor nonvolatile memory
JPS57160163A (en) * 1981-03-27 1982-10-02 Agency Of Ind Science & Technol Nonvolatile semiconductor memory
JPS5864068A (en) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol How to write non-volatile semiconductor memory
JPH04307974A (en) * 1991-04-05 1992-10-30 Sharp Corp Electrically erasable nonvolatile semiconductor memory device
CN111739572A (en) * 2019-03-25 2020-10-02 亿而得微电子股份有限公司 Low-voltage fast erasing method for electronically written erasable and rewritable read-only memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526148B2 (en) * 1972-05-18 1977-02-19

Also Published As

Publication number Publication date
NL7511017A (en) 1976-03-23
AU498494B2 (en) 1979-03-15
CA1070427A (en) 1980-01-22
NL175561B (en) 1984-06-18
NL175561C (en) 1984-11-16
ATA646575A (en) 1981-04-15
BE833633A (en) 1976-03-19
AU8479775A (en) 1977-03-17
FR2285677A1 (en) 1976-04-16
DK419975A (en) 1976-03-21
CH607233A5 (en) 1978-11-30
GB1517927A (en) 1978-07-19
FR2285677B1 (en) 1981-05-29
AT365000B (en) 1981-11-25
JPS5157255A (en) 1976-05-19
DK143923B (en) 1981-10-26
DK143923C (en) 1982-04-19

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