DK3997741T3 - Bagsideemitter-solcellestruktur med en heteroovergang samt fremgangsmåde og apparat til fremstilling af denne - Google Patents

Bagsideemitter-solcellestruktur med en heteroovergang samt fremgangsmåde og apparat til fremstilling af denne Download PDF

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Publication number
DK3997741T3
DK3997741T3 DK20760910.8T DK20760910T DK3997741T3 DK 3997741 T3 DK3997741 T3 DK 3997741T3 DK 20760910 T DK20760910 T DK 20760910T DK 3997741 T3 DK3997741 T3 DK 3997741T3
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Denmark
Prior art keywords
hetero
junction
manufacture
solar cell
same
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DK20760910.8T
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English (en)
Inventor
Jun Zhao
Marcel König
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Meyer Burger Germany Gmbh
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Publication of DK3997741T3 publication Critical patent/DK3997741T3/da

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
DK20760910.8T 2019-09-05 2020-07-31 Bagsideemitter-solcellestruktur med en heteroovergang samt fremgangsmåde og apparat til fremstilling af denne DK3997741T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019123785.8A DE102019123785A1 (de) 2019-09-05 2019-09-05 Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben
PCT/IB2020/057263 WO2021044232A1 (de) 2019-09-05 2020-07-31 Rückseitenemitter-solarzellenstruktur mit einem heteroübergang sowie verfahren und vorrichtung zur herstellung derselben

Publications (1)

Publication Number Publication Date
DK3997741T3 true DK3997741T3 (da) 2023-06-26

Family

ID=72193503

Family Applications (1)

Application Number Title Priority Date Filing Date
DK20760910.8T DK3997741T3 (da) 2019-09-05 2020-07-31 Bagsideemitter-solcellestruktur med en heteroovergang samt fremgangsmåde og apparat til fremstilling af denne

Country Status (15)

Country Link
EP (2) EP4203078A1 (da)
JP (1) JP2022547903A (da)
CN (1) CN113302751B (da)
AU (1) AU2020343894A1 (da)
DE (1) DE102019123785A1 (da)
DK (1) DK3997741T3 (da)
ES (1) ES2948512T3 (da)
FI (1) FI3997741T3 (da)
HR (1) HRP20230567T1 (da)
HU (1) HUE062220T2 (da)
PL (1) PL3997741T3 (da)
PT (1) PT3997741T (da)
SI (1) SI3997741T1 (da)
TW (1) TW202129988A (da)
WO (1) WO2021044232A1 (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019123785A1 (de) 2019-09-05 2021-03-11 Meyer Burger (Germany) Gmbh Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben
DE102019123758A1 (de) 2019-09-05 2021-03-11 Schaeffler Technologies AG & Co. KG Wellgetriebe zur variablen Ventilsteuerung einer Brennkraftmaschine
FR3131083B1 (fr) 2021-12-16 2024-09-20 Commissariat Energie Atomique Cellule photovoltaïque a contacts passives et a revêtement antireflet

Family Cites Families (27)

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JP3825585B2 (ja) 1999-07-26 2006-09-27 三洋電機株式会社 光起電力素子の製造方法
JP4171428B2 (ja) 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
EP2439780B1 (en) 2005-02-25 2019-10-02 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic cell
JP5127252B2 (ja) * 2007-02-02 2013-01-23 京セラ株式会社 光電変換素子の製造方法
US20090211627A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
JP2012501550A (ja) 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
US20110068367A1 (en) 2009-09-23 2011-03-24 Sierra Solar Power, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon
US20120085397A1 (en) 2010-10-11 2012-04-12 Choul Kim Solar cell
JP2011023759A (ja) 2010-11-02 2011-02-03 Sanyo Electric Co Ltd 光起電力素子の製造方法
JP5496856B2 (ja) 2010-11-02 2014-05-21 三洋電機株式会社 光起電力素子の製造方法
JP2012243797A (ja) * 2011-05-16 2012-12-10 Mitsubishi Electric Corp 太陽電池の製造方法
DE102012104289A1 (de) * 2012-05-16 2013-11-21 Roth & Rau Ag Heterokontakt-Solarzelle und Verfahren zu deren Herstellung
EP2682990B2 (en) 2012-07-02 2023-11-22 Meyer Burger (Germany) GmbH Methods of manufacturing hetero-junction solar cells with edge isolation
JP5868290B2 (ja) * 2012-08-23 2016-02-24 三菱電機株式会社 光起電力装置およびその製造方法
JP5908095B2 (ja) * 2012-08-29 2016-04-26 三菱電機株式会社 光起電力素子およびその製造方法
CN104795463B (zh) 2014-01-21 2017-02-15 上海理想万里晖薄膜设备有限公司 一种生产异质结太阳能电池的pecvd设备及工作方法
CN105154852A (zh) 2014-06-12 2015-12-16 上海理想万里晖薄膜设备有限公司 异质结太阳能电池pecvd工艺受硼污染解决方法
CN106601855A (zh) 2015-10-14 2017-04-26 钧石(中国)能源有限公司 一种双面发电异质结太阳能电池的制备方法
KR101778128B1 (ko) 2016-01-20 2017-09-13 엘지전자 주식회사 태양전지
CN109004053B (zh) 2017-06-06 2024-03-29 通威太阳能(成都)有限公司 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法
CN108091719A (zh) 2017-11-15 2018-05-29 君泰创新(北京)科技有限公司 异质结太阳能电池及其制备方法
CN109256440A (zh) 2018-09-17 2019-01-22 浙江爱旭太阳能科技有限公司 一种选择性钝化接触晶体硅太阳能电池及其制备方法
CN109411551B (zh) 2018-12-13 2023-12-15 江苏爱康能源研究院有限公司 多步沉积的高效晶硅异质结太阳能电池电极结构及其制备方法
CN109461780B (zh) 2018-12-13 2023-12-15 江苏爱康能源研究院有限公司 高匹配度的高效晶硅异质结太阳能电池电极结构及其制备方法
CN209328935U (zh) * 2019-03-06 2019-08-30 中国科学院上海微系统与信息技术研究所 镀膜设备
JP2020161551A (ja) * 2019-03-25 2020-10-01 パナソニック株式会社 太陽電池セル及び太陽電池モジュール
DE102019123785A1 (de) 2019-09-05 2021-03-11 Meyer Burger (Germany) Gmbh Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben

Also Published As

Publication number Publication date
FI3997741T3 (fi) 2023-06-20
EP3997741A1 (de) 2022-05-18
EP3997741B1 (de) 2023-03-29
AU2020343894A1 (en) 2022-02-24
CN113302751A (zh) 2021-08-24
ES2948512T3 (es) 2023-09-13
TW202129988A (zh) 2021-08-01
WO2021044232A1 (de) 2021-03-11
PT3997741T (pt) 2023-06-21
HRP20230567T1 (hr) 2023-09-15
CN113302751B (zh) 2022-07-12
EP4203078A1 (de) 2023-06-28
DE102019123785A1 (de) 2021-03-11
JP2022547903A (ja) 2022-11-16
HUE062220T2 (hu) 2023-10-28
PL3997741T3 (pl) 2023-09-11
SI3997741T1 (sl) 2023-10-30

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