DK265589A - Polykrystallinsk silicium til fremstilling af en- krystallinsk silicium med lang levetid - Google Patents

Polykrystallinsk silicium til fremstilling af en- krystallinsk silicium med lang levetid Download PDF

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Publication number
DK265589A
DK265589A DK265589A DK265589A DK265589A DK 265589 A DK265589 A DK 265589A DK 265589 A DK265589 A DK 265589A DK 265589 A DK265589 A DK 265589A DK 265589 A DK265589 A DK 265589A
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DK
Denmark
Prior art keywords
silicone
polycrystallinic
life
manufacturing
long
Prior art date
Application number
DK265589A
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Danish (da)
English (en)
Other versions
DK265589D0 (da
Inventor
Robert Nicholas Flagella
Howard Jerome Dawson
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of DK265589D0 publication Critical patent/DK265589D0/da
Publication of DK265589A publication Critical patent/DK265589A/da

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK265589A 1988-06-01 1989-05-31 Polykrystallinsk silicium til fremstilling af en- krystallinsk silicium med lang levetid DK265589A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/201,567 US4921026A (en) 1988-06-01 1988-06-01 Polycrystalline silicon capable of yielding long lifetime single crystalline silicon

Publications (2)

Publication Number Publication Date
DK265589D0 DK265589D0 (da) 1989-05-31
DK265589A true DK265589A (da) 1989-12-02

Family

ID=22746350

Family Applications (1)

Application Number Title Priority Date Filing Date
DK265589A DK265589A (da) 1988-06-01 1989-05-31 Polykrystallinsk silicium til fremstilling af en- krystallinsk silicium med lang levetid

Country Status (7)

Country Link
US (1) US4921026A (fr)
EP (1) EP0345618B1 (fr)
JP (1) JP2650064B2 (fr)
KR (1) KR930006695B1 (fr)
CA (1) CA1321531C (fr)
DE (1) DE68904700T2 (fr)
DK (1) DK265589A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2516823B2 (ja) * 1990-02-28 1996-07-24 信越半導体株式会社 浮遊帯域融解法による単結晶シリコン製造用の棒状多結晶シリコン及びその製造方法
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
JPH0873297A (ja) * 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
JP3357675B2 (ja) * 1996-05-21 2002-12-16 株式会社 トクヤマ 多結晶シリコンロッドおよびその製造方法
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
DE19882883B4 (de) 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
JP4328303B2 (ja) * 2004-09-16 2009-09-09 株式会社サンリック 太陽光発電用多結晶シリコン原料および太陽光発電用シリコンウェーハ
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
EP2168916A1 (fr) * 2007-07-13 2010-03-31 Nippon Mining & Metals Co., Ltd. Tranche de silicium fritté
EP2169707A4 (fr) * 2007-07-13 2012-11-21 Jx Nippon Mining & Metals Corp Tranche de silicium fritte
WO2009119338A1 (fr) * 2008-03-28 2009-10-01 日鉱金属株式会社 Tranche de silicium fritté
JP5137670B2 (ja) * 2008-04-23 2013-02-06 信越化学工業株式会社 多結晶シリコンロッドの製造方法
JP5279828B2 (ja) * 2008-07-10 2013-09-04 Ｊｘ日鉱日石金属株式会社 ハイブリッドシリコンウエハ及びその製造方法
DE102010003068A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
US8647747B2 (en) 2010-07-08 2014-02-11 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
US8252422B2 (en) 2010-07-08 2012-08-28 Jx Nippon Mining & Metals Corporation Hybrid silicon wafer and method of producing the same
DE102010043702A1 (de) * 2010-11-10 2012-05-10 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium
DE102011089356A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristallines Siliciumstück und Verfahren zum Brechen eines Siliciumkörpers
DE102011089479A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristallines Silicium
DE102012200994A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium
DE102012200992A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
DE102012213869A1 (de) 2012-08-06 2014-02-06 Wacker Chemie Ag Polykristalline Siliciumbruchstücke und Verfahren zu deren Herstellung
JP6443969B2 (ja) * 2014-08-26 2018-12-26 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶
DE102014221928A1 (de) * 2014-10-28 2016-04-28 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
KR102303581B1 (ko) * 2016-06-23 2021-09-16 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘 로드 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA700233A (en) * 1964-12-22 C. Theuerer Henry Preparation of purified semiconductor material
DE158655C (fr) *
JPS5265719A (en) * 1975-11-28 1977-05-31 Nippon Electric Co Producing method of silicon single crystals
US4040848A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles containing boron by sintering
JPS5950625B2 (ja) * 1976-06-26 1984-12-10 大阪チタニウム製造株式会社 シリコン単結晶棒のライフタイムの制御法
DE2636348A1 (de) * 1976-08-12 1978-02-16 Wacker Chemitronic Verfahren zur herstellung von reinem, elementarem halbleitermaterial
US4170667A (en) * 1977-01-31 1979-10-09 Motorola, Inc. Process for manufacturing pure polycrystalline silicon
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon

Also Published As

Publication number Publication date
EP0345618A3 (en) 1990-10-03
JPH02111613A (ja) 1990-04-24
KR900000291A (ko) 1990-01-30
EP0345618A2 (fr) 1989-12-13
CA1321531C (fr) 1993-08-24
EP0345618B1 (fr) 1993-02-03
US4921026A (en) 1990-05-01
DE68904700T2 (de) 1993-05-27
DE68904700D1 (de) 1993-03-18
KR930006695B1 (ko) 1993-07-22
DK265589D0 (da) 1989-05-31
JP2650064B2 (ja) 1997-09-03

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