DK1595006T3 - Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang - Google Patents

Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang

Info

Publication number
DK1595006T3
DK1595006T3 DK04708718T DK04708718T DK1595006T3 DK 1595006 T3 DK1595006 T3 DK 1595006T3 DK 04708718 T DK04708718 T DK 04708718T DK 04708718 T DK04708718 T DK 04708718T DK 1595006 T3 DK1595006 T3 DK 1595006T3
Authority
DK
Denmark
Prior art keywords
feed rod
rod
feed
energy supply
chamber
Prior art date
Application number
DK04708718T
Other languages
English (en)
Inventor
Per Vabengard
Leif Jensen
Jan Eyving Petersen
Original Assignee
Topsil Semiconductor Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topsil Semiconductor Materials filed Critical Topsil Semiconductor Materials
Application granted granted Critical
Publication of DK1595006T3 publication Critical patent/DK1595006T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
DK04708718T 2003-02-11 2004-02-06 Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang DK1595006T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200300193 2003-02-11
EP04708718A EP1595006B1 (en) 2003-02-11 2004-02-06 An apparatus for and a method of manufacturing a single crystal rod

Publications (1)

Publication Number Publication Date
DK1595006T3 true DK1595006T3 (da) 2006-11-06

Family

ID=32864870

Family Applications (1)

Application Number Title Priority Date Filing Date
DK04708718T DK1595006T3 (da) 2003-02-11 2004-02-06 Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang

Country Status (8)

Country Link
US (1) US7335257B2 (da)
EP (1) EP1595006B1 (da)
JP (1) JP5122128B2 (da)
CN (1) CN1328416C (da)
AT (1) ATE332990T1 (da)
DE (1) DE602004001510T2 (da)
DK (1) DK1595006T3 (da)
WO (1) WO2004072333A1 (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4784401B2 (ja) * 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
JP5296992B2 (ja) * 2007-01-31 2013-09-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
DE102009005837B4 (de) * 2009-01-21 2011-10-06 Pv Silicon Forschungs Und Produktions Gmbh Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
WO2011128292A1 (de) 2010-04-13 2011-10-20 Schmid Silicon Technology Gmbh Herstellung von monokristallinen halbleiterwerkstoffen
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
DE102010021004A1 (de) 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
CN103820847B (zh) * 2012-11-16 2016-06-15 有研半导体材料有限公司 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法
JP5679362B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP5679361B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
CN103993352A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的硅芯拉制方法
JP6269397B2 (ja) * 2014-09-05 2018-01-31 信越半導体株式会社 半導体単結晶棒の製造装置及び製造方法
CN105002553B (zh) * 2015-07-29 2017-07-04 哈尔滨工业大学（威海） 真空环境中使用的环形电子束无坩埚区域熔炼装置
DE102016214581A1 (de) * 2016-08-05 2018-02-08 Siltronic Ag Verfahren zur Herstellung eines Einkristalls durch Zonenschmelzen

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (de) 1966-09-24 1968-07-18 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
CA1253775A (en) 1984-09-04 1989-05-09 Karl Boden Method of and apparatus for growing crystals
US4866230A (en) 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPH0651598B2 (ja) * 1987-04-27 1994-07-06 信越半導体株式会社 半導体棒浮遊熔融帯域制御方法
JP2685242B2 (ja) * 1988-09-12 1997-12-03 株式会社クボタ 金属管内面のモルタルライニング方法
JPH03257091A (ja) 1990-03-07 1991-11-15 Nec Corp 結晶成長装置
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
JPH0748200A (ja) * 1993-08-04 1995-02-21 Natl Space Dev Agency Japan<Nasda> 単結晶の製造方法
JPH0977588A (ja) 1995-09-13 1997-03-25 Komatsu Electron Metals Co Ltd 浮遊帯域溶融法における晶出結晶径の自動制御方法およびその装置
DE19610650B4 (de) 1996-03-06 2004-03-18 Forschungsverbund Berlin E.V. Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben
JP4016363B2 (ja) * 1998-07-28 2007-12-05 信越半導体株式会社 浮遊溶融帯域制御装置及び制御方法
WO2001006041A1 (en) 1999-07-19 2001-01-25 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation
EP1088912A1 (fr) * 1999-09-28 2001-04-04 Forschungsverbund Berlin e.V. Croissance en solution dans une zone flottante de cristaux d'un composé ou d'un alliage

Also Published As

Publication number Publication date
DE602004001510T2 (de) 2007-07-26
EP1595006A1 (en) 2005-11-16
CN1328416C (zh) 2007-07-25
WO2004072333A1 (en) 2004-08-26
US7335257B2 (en) 2008-02-26
ATE332990T1 (de) 2006-08-15
DE602004001510D1 (de) 2006-08-24
US20060191471A1 (en) 2006-08-31
JP2006517173A (ja) 2006-07-20
CN1748049A (zh) 2006-03-15
EP1595006B1 (en) 2006-07-12
JP5122128B2 (ja) 2013-01-16

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