DK1212592T3 - Termisk sensor og fremgangsmåde til fremstilling af denne - Google Patents

Termisk sensor og fremgangsmåde til fremstilling af denne

Info

Publication number
DK1212592T3
DK1212592T3 DK00975192T DK00975192T DK1212592T3 DK 1212592 T3 DK1212592 T3 DK 1212592T3 DK 00975192 T DK00975192 T DK 00975192T DK 00975192 T DK00975192 T DK 00975192T DK 1212592 T3 DK1212592 T3 DK 1212592T3
Authority
DK
Denmark
Prior art keywords
making
detector
vanadium
resistivity
oxide
Prior art date
Application number
DK00975192T
Other languages
English (en)
Inventor
Robert E Higashi
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DK1212592T3 publication Critical patent/DK1212592T3/da

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Thermistors And Varistors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Glass Compositions (AREA)
DK00975192T 1999-09-13 2000-09-13 Termisk sensor og fremgangsmåde til fremstilling af denne DK1212592T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/394,154 US6144285A (en) 1999-09-13 1999-09-13 Thermal sensor and method of making same
PCT/US2000/024957 WO2001020280A1 (en) 1999-09-13 2000-09-13 Thermal sensor and method of making same

Publications (1)

Publication Number Publication Date
DK1212592T3 true DK1212592T3 (da) 2003-09-29

Family

ID=23557792

Family Applications (1)

Application Number Title Priority Date Filing Date
DK00975192T DK1212592T3 (da) 1999-09-13 2000-09-13 Termisk sensor og fremgangsmåde til fremstilling af denne

Country Status (12)

Country Link
US (1) US6144285A (da)
EP (1) EP1212592B1 (da)
JP (1) JP3532551B2 (da)
KR (1) KR100704948B1 (da)
AT (1) ATE246346T1 (da)
AU (1) AU1327301A (da)
CA (1) CA2384937C (da)
DE (1) DE60004251T2 (da)
DK (1) DK1212592T3 (da)
IL (2) IL148633A0 (da)
RU (1) RU2240516C2 (da)
WO (1) WO2001020280A1 (da)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621083B2 (en) * 2000-12-29 2003-09-16 Honeywell International Inc. High-absorption wide-band pixel for bolometer arrays
US6667479B2 (en) * 2001-06-01 2003-12-23 Raytheon Company Advanced high speed, multi-level uncooled bolometer and method for fabricating same
KR100538996B1 (ko) 2003-06-19 2005-12-27 한국전자통신연구원 적외선 흡수층으로 실리콘 산화막을 사용한 적외선 센서및 그 제조 방법
EP1668700B1 (en) * 2003-10-02 2010-03-10 Honeywell International Inc. Fabrication of thermal detecting structures
US7170059B2 (en) * 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
KR100517428B1 (ko) * 2003-12-17 2005-09-28 한국과학기술원 적외선 볼로메타
EP1788588B1 (en) 2004-09-01 2015-08-26 Sumitomo Electric Industries, Ltd. Soft magnetic material, dust core and method for producing dust core
FR2877492B1 (fr) * 2004-10-28 2006-12-08 Commissariat Energie Atomique Detecteur bolometrique a isolation thermique par constriction et dispositif de detection infrarouge mettant en oeuvre un tel detecteur bolometrique
US7709795B2 (en) * 2005-08-17 2010-05-04 Panasonic Electric Works Co., Ltd. Infrared sensor unit and process of fabricating the same
JP4899715B2 (ja) * 2005-08-17 2012-03-21 パナソニック電工株式会社 赤外線センサユニットの製造方法
US7628907B2 (en) * 2005-08-26 2009-12-08 Honeywell International Inc. Gas sensor
KR100930590B1 (ko) * 2007-12-14 2009-12-09 한국전자통신연구원 뒤틀림 현상이 개선된 멤스형 적외선 센서 및 그 제조 방법
FR2930639B1 (fr) * 2008-04-29 2011-07-01 Ulis Detecteur thermique a haute isolation
US8248737B2 (en) * 2008-12-16 2012-08-21 Seagate Technology Llc Magnetic sensor including an element for generating signals related to resistance changes
US7842533B2 (en) * 2009-01-07 2010-11-30 Robert Bosch Gmbh Electromagnetic radiation sensor and method of manufacture
US7915585B2 (en) * 2009-03-31 2011-03-29 Bae Systems Information And Electronic Systems Integration Inc. Microbolometer pixel and fabrication method utilizing ion implantation
CN102484129B (zh) * 2009-07-10 2015-07-15 惠普发展公司，有限责任合伙企业 具有本征整流器的忆阻结
KR101182406B1 (ko) * 2009-08-21 2012-09-13 한국전자통신연구원 적외선 감지 센서 및 그 제조 방법
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
CN101881667B (zh) * 2010-06-24 2015-09-09 电子科技大学 一种非制冷微测辐射热计及其制备方法
CN101886261B (zh) * 2010-07-09 2013-04-24 电子科技大学 一种用于微测辐射热计的氧化钒薄膜及其制作方法
CN101995297A (zh) * 2010-09-30 2011-03-30 烟台睿创微纳技术有限公司 一种红外桥式测温传感器
US8765514B1 (en) * 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
CN102315329B (zh) * 2011-09-13 2013-05-22 烟台睿创微纳技术有限公司 一种热敏薄膜红外探测器制备方法
CN102874738B (zh) * 2012-10-08 2016-06-15 上海集成电路研发中心有限公司 红外探测器及其制造方法
CN104649213B (zh) * 2013-11-19 2016-04-13 上海巨哥电子科技有限公司 一种微桥结构及其制备方法
CN103940518B (zh) * 2014-04-23 2016-10-19 电子科技大学 一种低热导的太赫兹探测单元微桥结构及其制备方法
DE102014213369B4 (de) * 2014-07-09 2018-11-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsdetektor und verfahren zur herstellung eines strahlungsdetektors und array von solchen strahlungsdetektoren
RU2595306C1 (ru) * 2015-07-03 2016-08-27 Общество с ограниченной ответственностью "Фотоэлектронные приборы" Датчик теплового излучения и способ его изготовления
CN105565249B (zh) * 2015-12-28 2017-08-22 上海集成电路研发中心有限公司 一种微辐射探测器的微桥结构及其阵列
CN106092335B (zh) * 2016-05-30 2019-02-05 上海集成电路研发中心有限公司 红外探测器中微桥结构的制备方法
CN108358157B (zh) * 2018-02-28 2020-07-17 电子科技大学 一种超材料微桥结构及其制备方法
KR102113320B1 (ko) * 2018-11-27 2020-05-20 한국과학기술원 열고립 특성이 향상된 비냉각형 적외선 센서 픽셀의 구조 및 이를 포함하는 적외선 열화상 장치
CN110940419B (zh) * 2019-08-30 2021-04-30 上海集成电路研发中心有限公司 一种红外探测器及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US36136A (en) * 1862-08-12 Improvement in plows
US5220188A (en) * 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5450053A (en) * 1985-09-30 1995-09-12 Honeywell Inc. Use of vanadium oxide in microbolometer sensors
US5300915A (en) * 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5399897A (en) * 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5801383A (en) * 1995-11-22 1998-09-01 Masahiro Ota, Director General, Technical Research And Development Institute, Japan Defense Agency VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
JP3003853B2 (ja) * 1997-09-09 2000-01-31 本田技研工業株式会社 ブリッジ構造を有するセンサ
JPH11148861A (ja) * 1997-09-09 1999-06-02 Honda Motor Co Ltd マイクロブリッジ構造
US5900799A (en) * 1997-10-03 1999-05-04 Mcdonnell Douglas Corporation High responsivity thermochromic infrared detector
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer

Also Published As

Publication number Publication date
CA2384937C (en) 2010-04-13
CA2384937A1 (en) 2001-03-22
IL148633A0 (en) 2002-09-12
IL148633A (en) 2006-09-05
KR100704948B1 (ko) 2007-04-10
KR20020039670A (ko) 2002-05-27
US6144285A (en) 2000-11-07
JP3532551B2 (ja) 2004-05-31
ATE246346T1 (de) 2003-08-15
WO2001020280A1 (en) 2001-03-22
EP1212592B1 (en) 2003-07-30
EP1212592A1 (en) 2002-06-12
DE60004251D1 (de) 2003-09-04
JP2003509682A (ja) 2003-03-11
DE60004251T2 (de) 2004-05-27
RU2240516C2 (ru) 2004-11-20
AU1327301A (en) 2001-04-17
RU2002109218A (ru) 2004-01-20

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