US6144285A - Thermal sensor and method of making same - Google Patents
Thermal sensor and method of making same Download PDFInfo
- Publication number
- US6144285A US6144285A US09/394,154 US39415499A US6144285A US 6144285 A US6144285 A US 6144285A US 39415499 A US39415499 A US 39415499A US 6144285 A US6144285 A US 6144285A
- Authority
- US
- United States
- Prior art keywords
- detector
- further characterized
- lower section
- thermal
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 20
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Definitions
- the present invention provides support legs and contacts which use only a minimum area to thus maximize the thermal detectance absorption area; this is a significant attribute. Additionally, the thermal conductance from the detector is minimized. Further, the process for fabricating the sensor uses a much smaller number of photomasks (5) to surpass the performance of the sensors of the prior art "wet etch" process which use up to 13 photomasks. Thus, the unique process of this invention (i) minimizes the thermal mass, thermal conductance, and pixel size limits, and (ii) provides a smaller, lower cost detector.
- FIG. 4 is an annotated isometric view of the device of FIG. 2 as viewed from the top left thereof.
- FIGS. 1, 2 and 4 have the horizontal scale compressed so as to permit satisfactory depiction of the vertical scale of the disclosed pixels.
- the prior art bi-level microbridge pixel 10 shown in FIG. 1 comprises in part a substrate 12 which includes integrated circuit means 12' and thus comprises a lower section of the pixel.
- the integrated circuit means may follow the teaching of U.S. Pat. No. Re 36,136.
- the upper section 11 is a complex multilayer structure made from the use of the technology, with a plurality of steps, as disclosed in U.S. Pat. No. Re. 36,136; U.S. Pat. Nos. 5,286,976 and 5,450,053 the result being an upper detector section 11 spaced from and supported immediately above the lower section 12, a spacing of 1.8 microns being a desirable spacing for many applications and utilizations of the pixel as is well understood by those skilled in the art.
- the prior art detector 10 comprises a series of successive layers 13-19: a first layer 13 of Si 3 N 4 on which are deposited a thin layer 14 of VOx (an oxide of vanadium); a layer 15 of NiCr; a layer 16 of Si 3 N 4 ; a layer 17 of Cr; a plug 18 of Cu; and a layer 19 of NiCr.
- VOx an oxide of vanadium
- the prior art pixel of FIG. 1 has a large number of layers which causes the pixel to hang a relatively heavy mass which then necessitates a larger amount of energy to change the temperature of the pixel.
- a reflective layer 34 may be applied to the top surface of substrate 31; a thin layer of indium tin oxide may be selected for this layer.
- the reflective layer functions to increase the sensitivity of the detector in accordance wth the teaching of U.S. Pat. No. 5,286,976.
- a vertical post 36 is provided to connect both mechanically and electrically the lower section 33 and the upper detector planar section 38 of the pixel. More specifically, post 36 is made of a conductor such as aluminum that has its lower end as shown in FIG. 2 electrically connected to the integrated circuit means 32 and mechanically supported on substrate 31. Referring to FIG. 4, it is seen that there are two diagonally positioned posts 36 and 36AA. The upper ends of posts 36 and 36AA are adapted to be connected to the ends of the leg portions 41 and 42 of the detector 40 discussed below.
- FIG. 2 it is seen that the upper detector planar section 38 is spaced from and is positioned immediately above the lower section 33; again a spacing of 1.8 microns is used in the preferred embodiment.
- the upper detector planar section 38 comprises in part a temperature responsive detector 40 of VOx (an oxide of vanadium) and shown in FIGS. 2 and 3; this material is characterized by having a high temperature coefficient of resistance (TCR) and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance.
- TCR temperature coefficient of resistance
- one successful embodiment of the present invention comprised, in part, a detector 40 having a VOx film thickness of 700 and a resistivity of 50K ohms per square sheet resistance.
- the top plan view of the temperature responsive detector 40 is shown in FIG. 3.
- a dielectric layer 49 may be provided on the underside of the sensor layer 40 including legs 41 and 42; it can contribute to the mechanical support of the sensor by the legs 41 and 42.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Measuring Fluid Pressure (AREA)
- Thermistors And Varistors (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (20)
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/394,154 US6144285A (en) | 1999-09-13 | 1999-09-13 | Thermal sensor and method of making same |
RU2002109218/28A RU2240516C2 (en) | 1999-09-13 | 2000-09-13 | Infrared radiation detector and method for manufacturing detector |
DK00975192T DK1212592T3 (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method for making it |
PCT/US2000/024957 WO2001020280A1 (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
AU13273/01A AU1327301A (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
DE60004251T DE60004251T2 (en) | 1999-09-13 | 2000-09-13 | INFRARED SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
JP2001523817A JP3532551B2 (en) | 1999-09-13 | 2000-09-13 | Heat detector and manufacturing method thereof |
IL14863300A IL148633A0 (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
EP00975192A EP1212592B1 (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
CA2384937A CA2384937C (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
KR1020027003332A KR100704948B1 (en) | 1999-09-13 | 2000-09-13 | Thermal sensor and method of making same |
AT00975192T ATE246346T1 (en) | 1999-09-13 | 2000-09-13 | INFRARED SENSOR AND METHOD FOR PRODUCING SAME |
IL148633A IL148633A (en) | 1999-09-13 | 2002-03-12 | Thermal sensor and method of making same |
AU2004203904A AU2004203904B2 (en) | 1999-09-13 | 2004-08-17 | Thermal sensor and method of making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/394,154 US6144285A (en) | 1999-09-13 | 1999-09-13 | Thermal sensor and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
US6144285A true US6144285A (en) | 2000-11-07 |
Family
ID=23557792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/394,154 Expired - Lifetime US6144285A (en) | 1999-09-13 | 1999-09-13 | Thermal sensor and method of making same |
Country Status (12)
Country | Link |
---|---|
US (1) | US6144285A (en) |
EP (1) | EP1212592B1 (en) |
JP (1) | JP3532551B2 (en) |
KR (1) | KR100704948B1 (en) |
AT (1) | ATE246346T1 (en) |
AU (1) | AU1327301A (en) |
CA (1) | CA2384937C (en) |
DE (1) | DE60004251T2 (en) |
DK (1) | DK1212592T3 (en) |
IL (2) | IL148633A0 (en) |
RU (1) | RU2240516C2 (en) |
WO (1) | WO2001020280A1 (en) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621083B2 (en) * | 2000-12-29 | 2003-09-16 | Honeywell International Inc. | High-absorption wide-band pixel for bolometer arrays |
US6667479B2 (en) * | 2001-06-01 | 2003-12-23 | Raytheon Company | Advanced high speed, multi-level uncooled bolometer and method for fabricating same |
US20050072924A1 (en) * | 2003-10-03 | 2005-04-07 | Honeywell International Inc. | Planar thermal array |
WO2005043624A1 (en) * | 2003-10-02 | 2005-05-12 | Honeywell International Inc. | Fabrication of thermal detecting structures |
US20050133721A1 (en) * | 2003-12-17 | 2005-06-23 | Korea Advanced Institute Of Science And Technology | Infrared bolometer |
EP1653205A1 (en) * | 2004-10-28 | 2006-05-03 | Commissariat A L'energie Atomique | Bolometric detector with thermal isolation by constriction |
US20070045129A1 (en) * | 2005-08-26 | 2007-03-01 | Honeywell International Inc. | Gas sensor |
US20090152466A1 (en) * | 2007-12-14 | 2009-06-18 | Electronics And Telecommunications Research Institute | Microbolometer with improved mechanical stability and method of manufacturing the same |
US20090266986A1 (en) * | 2008-04-29 | 2009-10-29 | Ulis | Highly isolated thermal detector |
US20100149696A1 (en) * | 2008-12-16 | 2010-06-17 | Seagate Technology Llc | Magnetic sensor including an element for generating signals related to resistance changes |
US20100243896A1 (en) * | 2009-03-31 | 2010-09-30 | Bae Systems Information And Electronic Systems Integration Inc. | Microbolometer pixel and fabrication method utilizing ion implantation |
CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
CN101886261A (en) * | 2010-07-09 | 2010-11-17 | 电子科技大学 | Vanadium oxide thin film for micro-metering bolometer and manufacturing method thereof |
US20110042569A1 (en) * | 2009-08-21 | 2011-02-24 | Electronics And Telecommunications Research Institute | Infrared detection sensor and method of fabricating the same |
CN101995297A (en) * | 2010-09-30 | 2011-03-30 | 烟台睿创微纳技术有限公司 | Infrared bridge type temperature measurement sensor |
CN102315329A (en) * | 2011-09-13 | 2012-01-11 | 烟台睿创微纳技术有限公司 | Preparation method of thermosensitive-film infrared detector |
CN102326255A (en) * | 2009-01-07 | 2012-01-18 | 罗伯特·博世有限公司 | Electromagnetic radiation sensor and method of manufacture |
US20120032134A1 (en) * | 2009-07-10 | 2012-02-09 | Jianhua Yang | Memristive Junction with Intrinsic Rectifier |
US8314769B2 (en) | 2010-04-28 | 2012-11-20 | Honeywell International Inc. | High performance detection pixel |
WO2013006151A2 (en) * | 2010-11-12 | 2013-01-10 | L-3 Communications Corporation | Transitioned film growth for conductive semiconductor materials |
CN102874738A (en) * | 2012-10-08 | 2013-01-16 | 上海集成电路研发中心有限公司 | Infrared probe and manufacture method thereof |
CN103940518A (en) * | 2014-04-23 | 2014-07-23 | 电子科技大学 | Microbridge structure of terahertz detection unit with low thermal conductance and preparation method thereof |
CN104649213A (en) * | 2013-11-19 | 2015-05-27 | 上海巨哥电子科技有限公司 | Micro-bridge structure and preparation method thereof |
CN105565249A (en) * | 2015-12-28 | 2016-05-11 | 上海集成电路研发中心有限公司 | Micro-bridge structure of micro radiation detector and array thereof |
RU2595306C1 (en) * | 2015-07-03 | 2016-08-27 | Общество с ограниченной ответственностью "Фотоэлектронные приборы" | Heat radiation sensor and its manufacturing method |
CN106092335A (en) * | 2016-05-30 | 2016-11-09 | 上海集成电路研发中心有限公司 | The preparation method of micro-bridge structure in Infrared Detectors |
US20170299438A1 (en) * | 2014-07-09 | 2017-10-19 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Radiation detector and method for manufacturing a radiation detector |
CN108358157A (en) * | 2018-02-28 | 2018-08-03 | 电子科技大学 | A kind of Meta Materials micro-bridge structure and preparation method thereof |
CN110940419A (en) * | 2019-08-30 | 2020-03-31 | 上海集成电路研发中心有限公司 | Infrared detector and preparation method thereof |
Families Citing this family (5)
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KR100538996B1 (en) | 2003-06-19 | 2005-12-27 | 한국전자통신연구원 | Infrared ray sensor using silicon oxide film as a infrared ray absorption layer and method for fabricating the same |
US7678174B2 (en) | 2004-09-01 | 2010-03-16 | Sumitomo Electric Industries, Ltd. | Soft magnetic material, compressed powder magnetic core and method for producing compressed power magnetic core |
JP4899715B2 (en) * | 2005-08-17 | 2012-03-21 | パナソニック電工株式会社 | Infrared sensor unit manufacturing method |
US7709795B2 (en) * | 2005-08-17 | 2010-05-04 | Panasonic Electric Works Co., Ltd. | Infrared sensor unit and process of fabricating the same |
KR102113320B1 (en) * | 2018-11-27 | 2020-05-20 | 한국과학기술원 | Structure of uncooled type infrared sensor pixel and thermography equipment with the infrared sensor pixel array |
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US36136A (en) * | 1862-08-12 | Improvement in plows | ||
US5220188A (en) * | 1983-07-06 | 1993-06-15 | Honeywell Inc. | Integrated micromechanical sensor element |
US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
US5399897A (en) * | 1993-11-29 | 1995-03-21 | Raytheon Company | Microstructure and method of making such structure |
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US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
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JP3003853B2 (en) * | 1997-09-09 | 2000-01-31 | 本田技研工業株式会社 | Sensor with bridge structure |
JPH11148861A (en) * | 1997-09-09 | 1999-06-02 | Honda Motor Co Ltd | Microbidge structure |
-
1999
- 1999-09-13 US US09/394,154 patent/US6144285A/en not_active Expired - Lifetime
-
2000
- 2000-09-13 KR KR1020027003332A patent/KR100704948B1/en not_active IP Right Cessation
- 2000-09-13 AT AT00975192T patent/ATE246346T1/en active
- 2000-09-13 AU AU13273/01A patent/AU1327301A/en not_active Abandoned
- 2000-09-13 JP JP2001523817A patent/JP3532551B2/en not_active Expired - Fee Related
- 2000-09-13 WO PCT/US2000/024957 patent/WO2001020280A1/en active IP Right Grant
- 2000-09-13 DE DE60004251T patent/DE60004251T2/en not_active Expired - Lifetime
- 2000-09-13 IL IL14863300A patent/IL148633A0/en active IP Right Grant
- 2000-09-13 CA CA2384937A patent/CA2384937C/en not_active Expired - Fee Related
- 2000-09-13 EP EP00975192A patent/EP1212592B1/en not_active Expired - Lifetime
- 2000-09-13 DK DK00975192T patent/DK1212592T3/en active
- 2000-09-13 RU RU2002109218/28A patent/RU2240516C2/en not_active IP Right Cessation
-
2002
- 2002-03-12 IL IL148633A patent/IL148633A/en not_active IP Right Cessation
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US36136A (en) * | 1862-08-12 | Improvement in plows | ||
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Title |
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Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621083B2 (en) * | 2000-12-29 | 2003-09-16 | Honeywell International Inc. | High-absorption wide-band pixel for bolometer arrays |
US6667479B2 (en) * | 2001-06-01 | 2003-12-23 | Raytheon Company | Advanced high speed, multi-level uncooled bolometer and method for fabricating same |
WO2005043624A1 (en) * | 2003-10-02 | 2005-05-12 | Honeywell International Inc. | Fabrication of thermal detecting structures |
US7170059B2 (en) | 2003-10-03 | 2007-01-30 | Wood Roland A | Planar thermal array |
US20050072924A1 (en) * | 2003-10-03 | 2005-04-07 | Honeywell International Inc. | Planar thermal array |
US20050133721A1 (en) * | 2003-12-17 | 2005-06-23 | Korea Advanced Institute Of Science And Technology | Infrared bolometer |
US7145141B2 (en) | 2003-12-17 | 2006-12-05 | Korea Advanced Institute Of Science And Technology | Infrared bolometer |
EP1653205A1 (en) * | 2004-10-28 | 2006-05-03 | Commissariat A L'energie Atomique | Bolometric detector with thermal isolation by constriction |
US20070205364A1 (en) * | 2004-10-28 | 2007-09-06 | Commissariat A L'energie Atomique | Bolometric detector with thermal isolation by constriction and device for detecting infrared radiation that uses such a bolometric detector |
US7268350B1 (en) | 2004-10-28 | 2007-09-11 | Commissariat A L'energie Atomique | Bolometric detector with thermal isolation by constriction and device for detecting infrared radiation that uses such a bolometric detector |
FR2877492A1 (en) * | 2004-10-28 | 2006-05-05 | Commissariat Energie Atomique | BOLOMETRIC DETECTOR WITH THERMAL INSULATION BY CONSTRICTION AND INFRARED DETECTION DEVICE USING SUCH A BOLOMETRIC DETECTOR |
US7628907B2 (en) | 2005-08-26 | 2009-12-08 | Honeywell International Inc. | Gas sensor |
US20070045129A1 (en) * | 2005-08-26 | 2007-03-01 | Honeywell International Inc. | Gas sensor |
US20090152466A1 (en) * | 2007-12-14 | 2009-06-18 | Electronics And Telecommunications Research Institute | Microbolometer with improved mechanical stability and method of manufacturing the same |
US7884328B2 (en) | 2007-12-14 | 2011-02-08 | Electronics And Telecommunications Research Institute | Microbolometer with improved mechanical stability and method of manufacturing the same |
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DK1212592T3 (en) | 2003-09-29 |
RU2240516C2 (en) | 2004-11-20 |
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RU2002109218A (en) | 2004-01-20 |
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