ATE246346T1 - Infrarotsensor und verfahren zu dessen herstellung - Google Patents

Infrarotsensor und verfahren zu dessen herstellung

Info

Publication number
ATE246346T1
ATE246346T1 AT00975192T AT00975192T ATE246346T1 AT E246346 T1 ATE246346 T1 AT E246346T1 AT 00975192 T AT00975192 T AT 00975192T AT 00975192 T AT00975192 T AT 00975192T AT E246346 T1 ATE246346 T1 AT E246346T1
Authority
AT
Austria
Prior art keywords
infrared sensor
producing same
detector
vanadium
resistivity
Prior art date
Application number
AT00975192T
Other languages
English (en)
Inventor
Robert E Higashi
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of ATE246346T1 publication Critical patent/ATE246346T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Thermistors And Varistors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Glass Compositions (AREA)
AT00975192T 1999-09-13 2000-09-13 Infrarotsensor und verfahren zu dessen herstellung ATE246346T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/394,154 US6144285A (en) 1999-09-13 1999-09-13 Thermal sensor and method of making same
PCT/US2000/024957 WO2001020280A1 (en) 1999-09-13 2000-09-13 Thermal sensor and method of making same

Publications (1)

Publication Number Publication Date
ATE246346T1 true ATE246346T1 (de) 2003-08-15

Family

ID=23557792

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00975192T ATE246346T1 (de) 1999-09-13 2000-09-13 Infrarotsensor und verfahren zu dessen herstellung

Country Status (12)

Country Link
US (1) US6144285A (de)
EP (1) EP1212592B1 (de)
JP (1) JP3532551B2 (de)
KR (1) KR100704948B1 (de)
AT (1) ATE246346T1 (de)
AU (1) AU1327301A (de)
CA (1) CA2384937C (de)
DE (1) DE60004251T2 (de)
DK (1) DK1212592T3 (de)
IL (2) IL148633A0 (de)
RU (1) RU2240516C2 (de)
WO (1) WO2001020280A1 (de)

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US6621083B2 (en) * 2000-12-29 2003-09-16 Honeywell International Inc. High-absorption wide-band pixel for bolometer arrays
US6667479B2 (en) * 2001-06-01 2003-12-23 Raytheon Company Advanced high speed, multi-level uncooled bolometer and method for fabricating same
KR100538996B1 (ko) 2003-06-19 2005-12-27 한국전자통신연구원 적외선 흡수층으로 실리콘 산화막을 사용한 적외선 센서및 그 제조 방법
EP1668700B1 (de) * 2003-10-02 2010-03-10 Honeywell International Inc. Verfahren zur herstellung thermischer detektorstrukturen
US7170059B2 (en) * 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
KR100539395B1 (ko) * 2003-10-09 2005-12-27 이홍기 2층 구조의 비냉각형 적외선 센서
KR100517428B1 (ko) * 2003-12-17 2005-09-28 한국과학기술원 적외선 볼로메타
FR2874691B1 (fr) * 2004-08-24 2006-11-17 Ulis Soc Par Actions Simplifie Composant de detection de rayonnements electromagnetiques, et notamment infrarouge, bloc optique d'imagerie infrarouge integrant un tel composant et procede pour sa realisation
US7678174B2 (en) 2004-09-01 2010-03-16 Sumitomo Electric Industries, Ltd. Soft magnetic material, compressed powder magnetic core and method for producing compressed power magnetic core
FR2877492B1 (fr) * 2004-10-28 2006-12-08 Commissariat Energie Atomique Detecteur bolometrique a isolation thermique par constriction et dispositif de detection infrarouge mettant en oeuvre un tel detecteur bolometrique
CN101248337B (zh) * 2005-08-17 2011-06-15 松下电工株式会社 红外传感器单元及其制造工艺
JP4899715B2 (ja) * 2005-08-17 2012-03-21 パナソニック電工株式会社 赤外線センサユニットの製造方法
US7628907B2 (en) * 2005-08-26 2009-12-08 Honeywell International Inc. Gas sensor
KR100930590B1 (ko) * 2007-12-14 2009-12-09 한국전자통신연구원 뒤틀림 현상이 개선된 멤스형 적외선 센서 및 그 제조 방법
FR2930639B1 (fr) * 2008-04-29 2011-07-01 Ulis Detecteur thermique a haute isolation
US8248737B2 (en) * 2008-12-16 2012-08-21 Seagate Technology Llc Magnetic sensor including an element for generating signals related to resistance changes
US7842533B2 (en) * 2009-01-07 2010-11-30 Robert Bosch Gmbh Electromagnetic radiation sensor and method of manufacture
US7915585B2 (en) * 2009-03-31 2011-03-29 Bae Systems Information And Electronic Systems Integration Inc. Microbolometer pixel and fabrication method utilizing ion implantation
US8710483B2 (en) * 2009-07-10 2014-04-29 Hewlett-Packard Development Company, L.P. Memristive junction with intrinsic rectifier
KR101182406B1 (ko) * 2009-08-21 2012-09-13 한국전자통신연구원 적외선 감지 센서 및 그 제조 방법
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
CN101881667B (zh) * 2010-06-24 2015-09-09 电子科技大学 一种非制冷微测辐射热计及其制备方法
CN101886261B (zh) * 2010-07-09 2013-04-24 电子科技大学 一种用于微测辐射热计的氧化钒薄膜及其制作方法
CN101995297A (zh) * 2010-09-30 2011-03-30 烟台睿创微纳技术有限公司 一种红外桥式测温传感器
US8765514B1 (en) * 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
CN102315329B (zh) * 2011-09-13 2013-05-22 烟台睿创微纳技术有限公司 一种热敏薄膜红外探测器制备方法
CN102874738B (zh) * 2012-10-08 2016-06-15 上海集成电路研发中心有限公司 红外探测器及其制造方法
CN104649213B (zh) * 2013-11-19 2016-04-13 上海巨哥电子科技有限公司 一种微桥结构及其制备方法
CN103940518B (zh) * 2014-04-23 2016-10-19 电子科技大学 一种低热导的太赫兹探测单元微桥结构及其制备方法
DE102014213369B4 (de) * 2014-07-09 2018-11-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsdetektor und verfahren zur herstellung eines strahlungsdetektors und array von solchen strahlungsdetektoren
RU2595306C1 (ru) * 2015-07-03 2016-08-27 Общество с ограниченной ответственностью "Фотоэлектронные приборы" Датчик теплового излучения и способ его изготовления
CN105565249B (zh) * 2015-12-28 2017-08-22 上海集成电路研发中心有限公司 一种微辐射探测器的微桥结构及其阵列
CN106092335B (zh) * 2016-05-30 2019-02-05 上海集成电路研发中心有限公司 红外探测器中微桥结构的制备方法
CN108358157B (zh) * 2018-02-28 2020-07-17 电子科技大学 一种超材料微桥结构及其制备方法
KR102113320B1 (ko) * 2018-11-27 2020-05-20 한국과학기술원 열고립 특성이 향상된 비냉각형 적외선 센서 픽셀의 구조 및 이를 포함하는 적외선 열화상 장치
CN110940419B (zh) * 2019-08-30 2021-04-30 上海集成电路研发中心有限公司 一种红外探测器及其制备方法

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Publication number Priority date Publication date Assignee Title
US36136A (en) * 1862-08-12 Improvement in plows
US5220188A (en) * 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5450053A (en) * 1985-09-30 1995-09-12 Honeywell Inc. Use of vanadium oxide in microbolometer sensors
US5300915A (en) 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5399897A (en) * 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5801383A (en) * 1995-11-22 1998-09-01 Masahiro Ota, Director General, Technical Research And Development Institute, Japan Defense Agency VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
JP3003853B2 (ja) * 1997-09-09 2000-01-31 本田技研工業株式会社 ブリッジ構造を有するセンサ
JPH11148861A (ja) * 1997-09-09 1999-06-02 Honda Motor Co Ltd マイクロブリッジ構造
US5900799A (en) * 1997-10-03 1999-05-04 Mcdonnell Douglas Corporation High responsivity thermochromic infrared detector
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer

Also Published As

Publication number Publication date
IL148633A0 (en) 2002-09-12
IL148633A (en) 2006-09-05
JP3532551B2 (ja) 2004-05-31
CA2384937A1 (en) 2001-03-22
WO2001020280A1 (en) 2001-03-22
KR20020039670A (ko) 2002-05-27
EP1212592B1 (de) 2003-07-30
RU2240516C2 (ru) 2004-11-20
DK1212592T3 (da) 2003-09-29
JP2003509682A (ja) 2003-03-11
KR100704948B1 (ko) 2007-04-10
RU2002109218A (ru) 2004-01-20
AU1327301A (en) 2001-04-17
US6144285A (en) 2000-11-07
EP1212592A1 (de) 2002-06-12
DE60004251T2 (de) 2004-05-27
CA2384937C (en) 2010-04-13
DE60004251D1 (de) 2003-09-04

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