DK0388972T3 - Apparat til slibning af en halvlederskive - Google Patents

Apparat til slibning af en halvlederskive

Info

Publication number
DK0388972T3
DK0388972T3 DK90105542.6T DK90105542T DK0388972T3 DK 0388972 T3 DK0388972 T3 DK 0388972T3 DK 90105542 T DK90105542 T DK 90105542T DK 0388972 T3 DK0388972 T3 DK 0388972T3
Authority
DK
Denmark
Prior art keywords
grinding
semiconductor disc
disc
semiconductor
Prior art date
Application number
DK90105542.6T
Other languages
Danish (da)
English (en)
Inventor
Masanori Nishiguchi
Noboru Gotoh
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1072906A external-priority patent/JP2674665B2/ja
Priority claimed from JP9038789A external-priority patent/JP2602948B2/ja
Priority claimed from JP9038689A external-priority patent/JP2647193B2/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of DK0388972T3 publication Critical patent/DK0388972T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
DK90105542.6T 1989-03-24 1990-03-23 Apparat til slibning af en halvlederskive DK0388972T3 (da)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1072906A JP2674665B2 (ja) 1989-03-24 1989-03-24 半導体ウェーハの研削装置
JP9038789A JP2602948B2 (ja) 1989-04-10 1989-04-10 半導体ウェーハの研削装置
JP9038689A JP2647193B2 (ja) 1989-04-10 1989-04-10 半導体ウェーハの研削装置

Publications (1)

Publication Number Publication Date
DK0388972T3 true DK0388972T3 (da) 1996-02-12

Family

ID=27301075

Family Applications (1)

Application Number Title Priority Date Filing Date
DK90105542.6T DK0388972T3 (da) 1989-03-24 1990-03-23 Apparat til slibning af en halvlederskive

Country Status (7)

Country Link
US (1) US5113622A (ko)
EP (1) EP0388972B1 (ko)
KR (1) KR930010977B1 (ko)
AU (1) AU637087B2 (ko)
CA (1) CA2012878C (ko)
DE (1) DE69024681T2 (ko)
DK (1) DK0388972T3 (ko)

Families Citing this family (53)

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US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5329732A (en) 1992-06-15 1994-07-19 Speedfam Corporation Wafer polishing method and apparatus
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US5487697A (en) * 1993-02-09 1996-01-30 Rodel, Inc. Polishing apparatus and method using a rotary work holder travelling down a rail for polishing a workpiece with linear pads
JP2894153B2 (ja) * 1993-05-27 1999-05-24 信越半導体株式会社 シリコンウエーハの製造方法、およびその装置
JP3363587B2 (ja) * 1993-07-13 2003-01-08 キヤノン株式会社 脆性材料の加工方法及びその装置
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US5891352A (en) 1993-09-16 1999-04-06 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
DE4335980C2 (de) * 1993-10-21 1998-09-10 Wacker Siltronic Halbleitermat Verfahren zum Positionieren einer Werkstückhalterung
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
JPH07237120A (ja) * 1994-02-22 1995-09-12 Nec Corp ウェーハ研磨装置
DE4424829A1 (de) * 1994-07-14 1996-01-18 Zahnradfabrik Friedrichshafen Vorrichtung für ein Verfahren zur Vermeidung von Überbeanspruchungen eines Werkstückes beim Schleifen
KR100258802B1 (ko) * 1995-02-15 2000-06-15 전주범 평탄화 장치 및 그를 이용한 평탄화 방법
IL113829A (en) 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
US20070123151A1 (en) * 1995-05-23 2007-05-31 Nova Measuring Instruments Ltd Apparatus for optical inspection of wafers during polishing
US7169015B2 (en) * 1995-05-23 2007-01-30 Nova Measuring Instruments Ltd. Apparatus for optical inspection of wafers during processing
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
JP3923107B2 (ja) * 1995-07-03 2007-05-30 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法およびその装置
JPH0929620A (ja) * 1995-07-20 1997-02-04 Ebara Corp ポリッシング装置
US5643050A (en) * 1996-05-23 1997-07-01 Industrial Technology Research Institute Chemical/mechanical polish (CMP) thickness monitor
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
DE69723210T2 (de) * 1996-11-14 2004-04-15 Ebara Corp. Drainageanordnung einer Polieranlage
KR19980064180A (ko) * 1996-12-19 1998-10-07 윌리엄비.켐플러 실리콘 웨이퍼의 등온 연마 촉진 방법
SG70097A1 (en) * 1997-08-15 2000-01-25 Disio Corp Apparatus and method for machining workpieces by flushing working liquid to the tool-and-workpiece interface
EP1019955A1 (en) * 1997-08-21 2000-07-19 MEMC Electronic Materials, Inc. Method of processing semiconductor wafers
US6102784A (en) * 1997-11-05 2000-08-15 Speedfam-Ipec Corporation Method and apparatus for improved gear cleaning assembly in polishing machines
US6146241A (en) * 1997-11-12 2000-11-14 Fujitsu Limited Apparatus for uniform chemical mechanical polishing by intermittent lifting and reversible rotation
JPH11156715A (ja) * 1997-11-21 1999-06-15 Ebara Corp ポリッシング装置
US5827111A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
JP3467184B2 (ja) * 1998-02-05 2003-11-17 信越半導体株式会社 ワークの研磨方法
JPH11254298A (ja) * 1998-03-06 1999-09-21 Speedfam Co Ltd スラリー循環供給式平面研磨装置
JP2000015557A (ja) * 1998-04-27 2000-01-18 Ebara Corp 研磨装置
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
US6240942B1 (en) * 1999-05-13 2001-06-05 Micron Technology, Inc. Method for conserving a resource by flow interruption
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
KR100413493B1 (ko) * 2001-10-17 2004-01-03 주식회사 하이닉스반도체 화학적 기계적 연마 장치의 연마 플래튼 및 그를 이용한평탄화방법
US6743722B2 (en) 2002-01-29 2004-06-01 Strasbaugh Method of spin etching wafers with an alkali solution
US20030209310A1 (en) * 2002-05-13 2003-11-13 Fuentes Anastacio C. Apparatus, system and method to reduce wafer warpage
KR100655122B1 (ko) * 2005-08-17 2006-12-08 현대자동차주식회사 연삭용 냉각액 공급 시스템
DE102006032455A1 (de) * 2006-07-13 2008-04-10 Siltronic Ag Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit
DE102006037490B4 (de) * 2006-08-10 2011-04-07 Peter Wolters Gmbh Doppelseiten-Bearbeitungsmaschine
DE102007030958B4 (de) * 2007-07-04 2014-09-11 Siltronic Ag Verfahren zum Schleifen von Halbleiterscheiben
ES2618180T3 (es) * 2009-08-31 2017-06-21 Elm Inc. Método de restauración de disco óptico y aparato
US8568198B2 (en) * 2010-07-16 2013-10-29 Pratt & Whitney Canada Corp. Active coolant flow control for machining processes
CN102615583A (zh) * 2011-01-28 2012-08-01 鸿富锦精密工业（深圳）有限公司 研磨装置
CN104084885B (zh) * 2014-07-15 2016-04-13 宇环数控机床股份有限公司 一种研磨抛光盘的循环冷却结构
CN104175225A (zh) * 2014-08-23 2014-12-03 济南大学 一种抛光机降温装置
US11491611B2 (en) * 2018-08-14 2022-11-08 Illinois Tool Works Inc. Splash guards for grinder/polisher machines and grinder/polisher machines having splash guards
CN111230725B (zh) * 2019-03-27 2021-06-15 浙江大学台州研究院 基于转速判断的石英晶片谐振频率的单圈分段方法
CN112720247B (zh) * 2020-12-30 2022-04-19 合肥晶合集成电路股份有限公司 一种化学机械平坦化设备及其应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611654A (en) * 1969-09-30 1971-10-12 Alliance Tool & Die Corp Polishing machine or similar abrading apparatus
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer
US4122008A (en) * 1977-02-10 1978-10-24 Eddy Allen Filtration process for separating particles from liquid coolants in lens grinding devices
DE3128880A1 (de) * 1981-07-22 1983-02-10 Fa. Peter Wolters, 2370 Rendsburg Maschine zum laeppen oder polieren
US4450652A (en) * 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
FR2523892A1 (fr) * 1982-03-26 1983-09-30 Procedes Equip Sciences Ind Perfectionnements aux machines de polissage a plateau tournant
DE3306246C2 (de) * 1983-02-23 1984-12-06 Maschinenfabrik Ernst Thielenhaus GmbH, 5600 Wuppertal Werkstückaufnahme zum Feinschleifen von zumindest bereichsweise kreiszylindrischen oder topfförmig ausgebildeten Werkstücken
JPS6034266A (ja) * 1983-08-08 1985-02-21 Toshiba Corp 研磨方法
DE3429965A1 (de) * 1983-08-29 1985-03-21 Hauni-Werke Körber & Co KG, 2050 Hamburg Schleifmaschine mit kuehlmittelumlauf
JPS60155363A (ja) * 1984-01-26 1985-08-15 Mitsui Mining & Smelting Co Ltd 平面研削機
JPH0659623B2 (ja) * 1984-03-23 1994-08-10 株式会社日立製作所 ウェハのメカノケミカルポリシング加工方法および装置
FR2564360B1 (fr) * 1984-05-21 1986-10-17 Crismatec Machine d'usinage double face et dispositif de transmission de courant et de fluide entre une structure tournante et une structure non tournante
JPS61226260A (ja) * 1985-03-30 1986-10-08 Mitsubishi Metal Corp 研削盤におけるドレツシング装置
JPS62264858A (ja) * 1986-05-13 1987-11-17 Hitachi Seiko Ltd 平面研削方法
JPS63114872A (ja) * 1986-10-29 1988-05-19 Speedfam Co Ltd 平面研磨装置

Also Published As

Publication number Publication date
EP0388972B1 (en) 1996-01-10
AU637087B2 (en) 1993-05-20
DE69024681T2 (de) 1996-06-05
EP0388972A2 (en) 1990-09-26
CA2012878A1 (en) 1990-09-24
AU5212090A (en) 1990-09-27
US5113622A (en) 1992-05-19
EP0388972A3 (en) 1991-02-06
KR930010977B1 (ko) 1993-11-18
KR900017119A (ko) 1990-11-15
DE69024681D1 (de) 1996-02-22
CA2012878C (en) 1995-09-12

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