DK209788D0 - Apparat til traekning af enkrystaller - Google Patents

Apparat til traekning af enkrystaller

Info

Publication number
DK209788D0
DK209788D0 DK209788A DK209788A DK209788D0 DK 209788 D0 DK209788 D0 DK 209788D0 DK 209788 A DK209788 A DK 209788A DK 209788 A DK209788 A DK 209788A DK 209788 D0 DK209788 D0 DK 209788D0
Authority
DK
Denmark
Prior art keywords
single crystals
drawing single
crystals
Prior art date
Application number
DK209788A
Other languages
English (en)
Other versions
DK209788A (da
Inventor
Dieter Drechsel
Karl Jericho
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Publication of DK209788D0 publication Critical patent/DK209788D0/da
Publication of DK209788A publication Critical patent/DK209788A/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C03B15/14—Drawing tubes, cylinders, or rods from the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
DK209788A 1987-10-03 1988-04-18 Apparat til traekning af enkrystaller DK209788A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3733487A DE3733487C2 (de) 1987-10-03 1987-10-03 Vorrichtung zum Ziehen von Einkristallen

Publications (2)

Publication Number Publication Date
DK209788D0 true DK209788D0 (da) 1988-04-18
DK209788A DK209788A (da) 1989-04-04

Family

ID=6337565

Family Applications (1)

Application Number Title Priority Date Filing Date
DK209788A DK209788A (da) 1987-10-03 1988-04-18 Apparat til traekning af enkrystaller

Country Status (6)

Country Link
EP (1) EP0310739B1 (da)
JP (1) JP2635688B2 (da)
KR (1) KR960009700B1 (da)
DE (2) DE3733487C2 (da)
DK (1) DK209788A (da)
FI (1) FI88313C (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JP3774920B2 (ja) * 1995-12-27 2006-05-17 信越半導体株式会社 単結晶引上装置のヒータ機構
DE19830785A1 (de) * 1998-07-09 2000-01-13 Wacker Siltronic Halbleitermat Stütztiegel zur Stützung von Schmelztiegeln
JP5131170B2 (ja) * 2008-12-05 2013-01-30 信越半導体株式会社 単結晶製造用上部ヒーターおよび単結晶製造装置ならびに単結晶製造方法
US8944354B2 (en) 2011-09-30 2015-02-03 Starbucks Corporation Apparatus, systems, and methods for grinding a material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
GB1095587A (da) * 1965-09-24
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
JPS6027683A (ja) * 1983-07-21 1985-02-12 Toshiba Corp 単結晶製造装置用発熱抵抗体
JPS60103097A (ja) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd 単結晶引上装置
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IN161924B (da) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
DE3506754A1 (de) * 1985-02-26 1986-08-28 Leybold-Heraeus GmbH, 5000 Köln Klemmverbindung in elektrisch beheizten vakuumanlagen

Also Published As

Publication number Publication date
JPH0196087A (ja) 1989-04-14
FI884510A (fi) 1989-04-04
EP0310739A2 (de) 1989-04-12
DK209788A (da) 1989-04-04
KR960009700B1 (ko) 1996-07-23
DE3733487A1 (de) 1989-04-13
DE3877486D1 (de) 1993-02-25
DE3733487C2 (de) 1997-08-14
JP2635688B2 (ja) 1997-07-30
FI88313B (fi) 1993-01-15
FI88313C (fi) 1993-04-26
EP0310739A3 (en) 1990-06-27
KR890006529A (ko) 1989-06-14
FI884510A0 (fi) 1988-09-30
EP0310739B1 (de) 1993-01-13

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Legal Events

Date Code Title Description
AHS Application shelved for other reasons than non-payment