DE969465C - Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen - Google Patents

Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen

Info

Publication number
DE969465C
DE969465C DES34551A DES0034551A DE969465C DE 969465 C DE969465 C DE 969465C DE S34551 A DES34551 A DE S34551A DE S0034551 A DES0034551 A DE S0034551A DE 969465 C DE969465 C DE 969465C
Authority
DE
Germany
Prior art keywords
protective layer
semiconductor
covered
layer
sharp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES34551A
Other languages
German (de)
English (en)
Inventor
Dr Karl Siebertz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL109229D priority Critical patent/NL109229C/xx
Priority to NL269213D priority patent/NL269213A/xx
Priority to NL107276D priority patent/NL107276C/xx
Priority to NLAANVRAGE7906612,A priority patent/NL189573B/xx
Priority to NL269212D priority patent/NL269212A/xx
Priority to NL101504D priority patent/NL101504C/xx
Priority to DES11109D priority patent/DE911529C/de
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES34551A priority patent/DE969465C/de
Priority to DES34714A priority patent/DE1115838B/de
Priority to DES34794A priority patent/DE977619C/de
Priority to DES38554A priority patent/DE1012378B/de
Priority to FR1112727D priority patent/FR1112727A/fr
Application granted granted Critical
Publication of DE969465C publication Critical patent/DE969465C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
DES34551A 1941-08-06 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen Expired DE969465C (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL107276D NL107276C (enrdf_load_stackoverflow) 1953-07-28
NLAANVRAGE7906612,A NL189573B (nl) 1953-07-28 Scharnier voor een venster met een uit strengprofielen vervaardigde vleugellijst.
NL269212D NL269212A (enrdf_load_stackoverflow) 1953-07-28
NL101504D NL101504C (enrdf_load_stackoverflow) 1953-07-28
NL109229D NL109229C (enrdf_load_stackoverflow) 1953-07-28
NL269213D NL269213A (enrdf_load_stackoverflow) 1953-07-28
DES11109D DE911529C (de) 1941-08-06 1941-08-06 Verfahren zur Herstellung von Stereobildern mit Hilfe von Korpuskularstrahlapparaten
DES34551A DE969465C (de) 1953-07-28 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DES34714A DE1115838B (de) 1953-07-28 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A DE977619C (de) 1953-07-28 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A DE1012378B (de) 1953-07-28 1954-04-05 Halbleiteranordnung mit p-n-UEbergang
FR1112727D FR1112727A (fr) 1953-07-28 1954-07-28 élément semi-conducteur et procédé de fabrication dudit élément

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES34551A DE969465C (de) 1953-07-28 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DES34714A DE1115838B (de) 1953-07-28 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A DE977619C (de) 1953-07-28 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A DE1012378B (de) 1953-07-28 1954-04-05 Halbleiteranordnung mit p-n-UEbergang

Publications (1)

Publication Number Publication Date
DE969465C true DE969465C (de) 1958-06-04

Family

ID=27437475

Family Applications (4)

Application Number Title Priority Date Filing Date
DES34551A Expired DE969465C (de) 1941-08-06 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DES34714A Pending DE1115838B (de) 1941-08-06 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A Expired DE977619C (de) 1941-08-06 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A Pending DE1012378B (de) 1941-08-06 1954-04-05 Halbleiteranordnung mit p-n-UEbergang

Family Applications After (3)

Application Number Title Priority Date Filing Date
DES34714A Pending DE1115838B (de) 1941-08-06 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A Expired DE977619C (de) 1941-08-06 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A Pending DE1012378B (de) 1941-08-06 1954-04-05 Halbleiteranordnung mit p-n-UEbergang

Country Status (3)

Country Link
DE (4) DE969465C (enrdf_load_stackoverflow)
FR (1) FR1112727A (enrdf_load_stackoverflow)
NL (6) NL107276C (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1163978B (de) * 1961-08-30 1964-02-27 Licentia Gmbh Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente
DE1172777B (de) * 1960-08-30 1964-06-25 Int Standard Electric Corp Halbleiterbauelement mit mindestens einem pn-UEbergang und Verfahren zum Herstellen
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246886B (de) * 1960-07-30 1967-08-10 Elektronik M B H Verfahren zur Stabilisierung und Verbesserung der Sperreigenschaften von Halbleiterbauelementen
DE1246888C2 (de) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg Verfahren zum herstellen von gleichrichteranordnungen in brueckenschaltung fuer kleine stromstaerken
DE1244966B (de) * 1962-01-17 1967-07-20 Telefunken Patent Verfahren zur Herstellung von oberflaechenstabilisierten Halbleiterbauelementen
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH262415A (de) * 1945-04-28 1949-06-30 Hugh Brittain Francis Kristallgleichrichter und Verfahren zu seiner Herstellung.
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
GB713996A (en) * 1951-04-28 1954-08-18 Rca Corp Improvements in transitor devices

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE626305C (de) * 1928-03-10 1936-03-02 Siegmund Loewe Dr Mehrfachroehre
DE724888C (de) * 1936-05-30 1942-09-09 Siemens Ag Verfahren zum Herstellen von Selen-Gleichrichtern
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
NL34436C (enrdf_load_stackoverflow) * 1945-04-20
NL144803C (enrdf_load_stackoverflow) * 1948-02-26
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
NL152683C (enrdf_load_stackoverflow) * 1949-03-31
CA478611A (en) * 1949-12-29 1951-11-13 Western Electric Company, Incorporated Etching processes and solutions
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
BE507187A (enrdf_load_stackoverflow) * 1950-11-30
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
GB1576783A (en) * 1977-11-07 1980-10-15 Teledyne Canada Control apparatus for a pneumaticallyoperated hopper feeder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH262415A (de) * 1945-04-28 1949-06-30 Hugh Brittain Francis Kristallgleichrichter und Verfahren zu seiner Herstellung.
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
GB713996A (en) * 1951-04-28 1954-08-18 Rca Corp Improvements in transitor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1172777B (de) * 1960-08-30 1964-06-25 Int Standard Electric Corp Halbleiterbauelement mit mindestens einem pn-UEbergang und Verfahren zum Herstellen
DE1163978B (de) * 1961-08-30 1964-02-27 Licentia Gmbh Verfahren zur Erzeugung einer Schutzschicht auf Oberflaechen von Halbleiterkoerpern fuer Halbleiterbauelemente
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Also Published As

Publication number Publication date
FR1112727A (fr) 1956-03-19
DE977619C (de) 1967-08-31
NL189573B (nl) 1900-01-01
NL107276C (enrdf_load_stackoverflow) 1900-01-01
DE1115838B (de) 1961-10-26
NL101504C (enrdf_load_stackoverflow) 1900-01-01
NL109229C (enrdf_load_stackoverflow) 1900-01-01
NL269213A (enrdf_load_stackoverflow) 1900-01-01
DE1012378B (de) 1957-07-18
NL269212A (enrdf_load_stackoverflow) 1900-01-01

Similar Documents

Publication Publication Date Title
DE1182353C2 (de) Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
DE1186951B (de) Verfahren zum Herstellen einer hermetisch eingeschlossenen Halbleiteranordnung
DE969465C (de) Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DE1514337B1 (de) Unipolartransistor
DE840418C (de) Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE3013563A1 (de) Bauteil vom isolierstoff-halbleiter- typ, in dem der halbleiter eine iii-v- verbindung und der isolierstoff ein sulfid sind und verfahren zur herstellung eines solchen bauteils
EP0185787B1 (de) Plastikumhülltes Halbleiterbauelement
DE1917058B2 (de) Halbleiterbauelement mit schottky- sperrschicht
DE1274243C2 (de) Verfahren zur herstellung einer tunneldiode
DE1027798B (de) Verfahren zur Herstellung von Elektrodensystemen, die einen halbleitenden Koerper enthalten, insbesondere Kristalldioden oder Transistoren
DE2346738A1 (de) Verfahren zum aufbringen duenner schichten auf flaechenhafte gebilde
DES0034551MA (enrdf_load_stackoverflow)
EP0075892A2 (de) Integrierter Halbleiterschaltkreis mit einer halbisolierenden Halbleiterschicht
DE935382C (de) Spitzengleichrichter hoher Stabilitaet und Leistung
DE2209979A1 (de) Elektrisches bauelement
DE1910447A1 (de) Halbleiterbauelement
DE1439417B2 (de) Verfahren zum herstellen einer halbleiteranordnung
DE1514881A1 (de) Verfahren zum Kontaktieren von Halbleiterbauelementen
DE1167386B (de) Cryoelektrisches Bauelement
EP1075030A3 (de) Verfahren zur elektrischen Isolation von Supraleitern insbesondere aus oxidischem Hochtemperatur-Supraleitermaterial
DE1439417C3 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1100174B (de) Verfahren zum Schutz von Halbleiteranordnungen mit pn-UEbergang
DE1564896A1 (de) Halbleiteranordnung
DE1143270B (de) Verfahren zur Herstellung eines Hallspannungserzeugers
DE1954443B2 (de) Halbleiterbauelement mit einem Schottky-Übergang und Verfahren zu seiner Herstellung