DE8801205U1 - Leistungstransistor - Google Patents
LeistungstransistorInfo
- Publication number
- DE8801205U1 DE8801205U1 DE8801205U DE8801205U DE8801205U1 DE 8801205 U1 DE8801205 U1 DE 8801205U1 DE 8801205 U DE8801205 U DE 8801205U DE 8801205 U DE8801205 U DE 8801205U DE 8801205 U1 DE8801205 U1 DE 8801205U1
- Authority
- DE
- Germany
- Prior art keywords
- power transistor
- emitter
- cell
- transistor according
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 244000309464 bull Species 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 10
- 230000002950 deficient Effects 0.000 claims 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 101150067539 AMBP gene Proteins 0.000 description 1
- 241001611138 Isma Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE8801205U DE8801205U1 (de) | 1988-01-30 | 1988-02-02 | Leistungstransistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3802767A DE3802767A1 (de) | 1988-01-30 | 1988-01-30 | Elektronisches geraet |
| DE8801205U DE8801205U1 (de) | 1988-01-30 | 1988-02-02 | Leistungstransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE8801205U1 true DE8801205U1 (de) | 1989-06-01 |
Family
ID=25864420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8801205U Expired DE8801205U1 (de) | 1988-01-30 | 1988-02-02 | Leistungstransistor |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE8801205U1 (nl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609531A2 (en) * | 1993-02-02 | 1994-08-10 | Motorola, Inc. | Power transistor |
-
1988
- 1988-02-02 DE DE8801205U patent/DE8801205U1/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609531A2 (en) * | 1993-02-02 | 1994-08-10 | Motorola, Inc. | Power transistor |
| EP0609531A3 (en) * | 1993-02-02 | 1995-06-07 | Motorola Inc | Power transistor. |
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